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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Synchrophasor-Based Zonal Current Differential Protection for Secondary Low Voltage Networks

This report describes an approach to utilizing phasor measurement unit (PMU) data from multiple Intelligent Electronics Devices (IEDs) in a low-voltage network to produce a differential scheme for protecting the medium-voltage feeder and low-voltage network transformers. The proposed protection scheme is designed and prototyped on a real-time automation controller. Its performance is evaluated using real-time controller hardware-in-the-loop simulation. Lab testing results indicate that the proposed protection scheme allows significant distributed energy resources (DER) backfeed and enables selective and fast protection of medium voltage feeders.

42 ENGINEERING↗
DOE OSTI2021

Matrix Completion for Improved Observability in Low-Voltage Distribution Grids

This paper considers the problem of recovering missing entries in a partially observed matrix from relatively few measurements (i.e., the so-called matrix completion problem) with the aim of increasing the presently limited observability of low-voltage distribution grids. To this end, the partially observed matrix is formed using scarce voltage magnitude measurements while accounting for their spatial information. Voltage readings are assumed to be collected from distribution utility sensors and/or geographically-distributed cable television network sensors located in immediate proximity to distribution grid nodes. A matrix completion approach built on the parameter-less singular value shrinkage technique is used to estimate voltage magnitudes at otherwise non-observable low-voltage nodes using a small number of single- or multiple-snapshot data. The effectiveness of the proposed approach is demonstrated using a U.S.-style distribution test system from the synthetic SMART- DS data set under very low- to moderate-observability conditions.

low-rank matrix completion↗
DOE OSTI2022

Roadmap for Advancement of Low-Voltage Secondary Distribution Network Protection

Downtown low-voltage (LV) distribution networks are generally protected with network protectors that detect faults by restricting reverse power flow out of the network. This creates protection challenges for protecting the system as new smart grid technologies and distributed generation are installed. This report summarizes well-established methods for the control and protection of LV secondary network systems and spot networks, including operating features of network relays. Some current challenges and findings are presented from interviews with three utilities, PHI PEPCO, Oncor Energy Delivery, and Consolidated Edison Company of New York. Opportunities for technical exploration are presented with an assessment of the importance or value and the difficulty or cost. Finally, this leads to some recommendations for research to improve protection in secondary networks.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1977

Low-voltage motor heater

Heater has stepdown transformer for low voltage range, variable transformer for holding within 0-to-28 volt range, and voltmeters and ammeters to monitor load and wattage. Regulated thermostat controls contactor, permitting heater to cycle.

Bezant, K. R.↗
NASA NTRS1994

Low-Voltage Bypass Device

Improved bypass device provides low-resistance current shunt around low-voltage power cell when cell fails in open-circuit condition during operation. In comparison with older bypass devices for same application, this one weighs less, generates less heat, and has lower voltage drop (less resistance). Bypass device connected in parallel with power cell. Draws very little current during normal operation of cell.

Wilson, J. P.↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties: Dynamic Breakdown Properties - Part 2

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Neudeck, Philip G.↗
DOE OSTI2022

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗
DOE OSTI2022

Temperature Dependence of FDR Response for Thermally Aged Low-Voltage Cables

Frequency Domain Reflectometry (FDR) has attracted significant attention for use in nuclear power plants (NPPs) for non-destructive cable health monitoring. However, cable aging detection using FDR faces challenges due to its high sensitivity to environmental factors such as temperature, vibrations, proximity to other cables, and so on. This work aims to evaluate the influence of measurement temperature on the FDR reflected signal in a low voltage cable undergoing accelerated thermal aging. A 100 ft long multi-core low-voltage unshielded power cable insulated with flame retardant ethylene propylene rubber (FR-EPR) and covered by a chloro-polyethylene (CPE) jacket was selected for this study. The cable was energized during aging by a 480 VAC 3-phase motor, and a 30 ft mid-section of this cable was routed through an air circulating oven held at 140 °C for up to an effective aging time of 62 days. FDR measurements were taken periodically with the oven on (at 140 °C) and with the oven off (at 22 °C). A comparative analysis of data collected at both temperatures showed that the FDR response was strongly dependent on measurement temperature. FDR measurements at ambient temperature showed large peaks corresponding to impedance changes in the aged section of the cable after 3 days of aging. These peaks continued to rise steadily with increasing aging time. However, for measurements taken at 140 °C, slowly rising peaks in the oven region (aged section) were observed only after a lead time of 23 days of aging. This work highlights the importance of measurement temperature on the performance of FDR as a condition monitoring tool for aging cables.

Sriraman, Aishwarya↗
NASA NTRS2010

Space Life Sciences Directorate's Position on the Physiological Effects of Exposing the Crewmemeber to Low-Voltage Electrical Hazards During Extravehicular Activity

The models predict that, for low voltage exposures in the space suit, physiologically active current could be conducted across the crew member causing catastrophic hazards. Future work with Naval Health Research Center Detachment Directed Energy Bio-effects Laboratory is being proposed to analyze additional current paths across the human torso and upper limbs. These models may need to be verified with human studies.

Hamilton, Douglas↗