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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Probing Coherent States of Light and Matter in Two-Dimensional Semiconductors. Final Report

The ability to enhance light-matter interactions in engineered optical environments is well-established in micro- and nano-photonics. New classes of materials bring new rich correlations between spin, momentum, and light polarization that can be exploited in these photonic systems for information processing and low-power electronics. Interfacing these novel material features with strong optical interactions suggests the compelling capability to create hybrid light-matter systems harnessing low-energy and protected material properties such as spin. The long-term objective of this program was to investigate the interplay between pseudospin in 2D materials and light, revealing new coherent phenomena. The materials studied are the monolayer transition metal dichalcogenides (TMDs), which support polarization-sensitive optical transitions when isolated to a single sub-nanometer crystal layer in thickness. In particular, monolayer TMD semiconductors such as MoS 2 exhibit degenerate valleys in momentum space with distinct spin character. These valleys can be separately addressed by circularly polarized light, providing a tool for manipulation. Integrating this valley pseudospin of excitons in monolayer TMDs with engineered strong optical excitations to create novel coherent phenomena was a key long-term goal of this research. The scope of this research primarily focused on studying light-matter interactions of valley-sensitive excitations in monolayer TMDs. The scope also included the integration of monolayer materials that support valley-polarized emission into photonic devices. This approach extends prior work on exciton-polaritons in 2D materials toward a platform with far more control and improved light input and output characteristics to aid scalability of these polarization-sensitive phenomena to many-body, long-range optical networks. During the course of the five-year Early Career program, the approaches led to successful progress on each proposed aim. Initial successful work seeded additional research that developed from the main themes, while this program focus evolved toward coherent manipulation of valley polaritons and integration with photonics. Both of these advanced topics set the stage for new capabilities in future innovative research. The results of this project provide advances in materials and methods relevant for new visions of opto-electronics and photonics that can improve information processing in an era of increased focus on quantum and coherent phenomena. The research has also contributed to the training of two postdoctoral scholars and five graduate students.

2D Materials↗
NASA NTRS2016

Optical Breath Gas Extravehicular Activity Sensor for the Advanced Portable Life Support System

The function of the infrared gas transducer used during extravehicular activity (EVA) in the current space suit is to measure and report the concentration of carbon dioxide (CO2) in the ventilation loop. The next generation portable life support system (PLSS) requires highly accurate CO2 sensing technology with performance beyond that presently in use on the International Space Station extravehicular mobility unit (EMU). Further, that accuracy needs to be provided over the full operating pressure range of the suit (3 to 25 psia). Accommodation within space suits demands that optical sensors meet stringent size, weight, and power requirements. A laser diode (LD) sensor based on infrared absorption spectroscopy is being developed for this purpose by Vista Photonics, Inc. Version 1.0 prototype devices were delivered to NASA Johnson Space Center (JSC) in September 2011. The prototypes were upgraded with more sophisticated communications and faster response times to version 2.0 and delivered to JSC in July 2012. The sensors incorporate a laser diode based CO2 channel that also includes an incidental water vapor (humidity) measurement. The prototypes are controlled digitally with an field-programmable gate array microcontroller architecture. Based on the results of the iterative instrument development, further prototype development and testing of instruments were performed leveraging the lessons learned where feasible. The present development extends and upgrades the earlier hardware for the advanced PLSS 2.5 prototypes for testing at JSC. The prototypes provide significantly enhanced accuracy for water vapor measurement and eliminate wavelength drift affecting the earlier versions. Various improvements to the electronics and gas sampling are currently being advanced including the companion development of engineering development units that will ultimately be capable of radiation tolerance. The combination of low power electronics with the performance of a long wavelength laser spectrometer enables multi-gas sensors with significantly increased performance over that presently offered in the EMU.

Wood, William R.↗
NASA NTRS1990

Vehicle charging effects during electron beam emission from the CHARGE-2 experiment

The CHARGE-2 sounding rocket payload has measured the transient and steady-state charging of a spacecraft in LEO during the emission of a low-power electron beam. The electron beam successfully escaped the emitting spacecraft above 240 km, rather than being degraded by the spacecraft's potentials. These potentials were limited to about half of the 1-kV beam accelerating potential at all latitudes, suggesting that the electron beam was able to escape at altitudes down to 160 km. Electrons created from beam-plasma interactions become increasingly important in the return current below 240 km, and increased with decreasing altitude.

Myers, Neil B.↗
DOE OSTI2021

Towards a reliable assessment of charging effects during surface analysis: Accurate spectral shapes of ZrO 2 and Pd/ZrO 2 via X-ray Photoelectron Spectroscopy

X-ray Photoelectron Spectroscopy of large bandgap or insulating material surfaces relies on an effective mechanism that compensates for the emission (loss) of electrons by maintaining the material surface at a steady-state uniform potential. While a steady-state may be attained by utilizing an active compensation, such as low power electron emitting filament, there is the possibility that the surface potential is not uniform over the area analyzed, leading to peak shifts and incorrect spectral interpretation. Here, in this work, a spectral data processing method based on mapping the ZrO 2 and Pd/ZrO 2 surfaces utilizing photoemission peak binding energy is proposed, which provides information about the response of specific material surfaces to charge compensation. Spectromicroscopy of ZrO 2 and Pd/ZrO 2 surfaces without spatial information is used to monitor the efficacy of charge compensation. Exploiting counts distributed over many bins require the use of procedures and algorithms essential to practical mapping peak positions. Iterative singular value decomposition is therefore introduced and utilized as a means of efficiently delivering spatially resolved spectra from which binding energy for peaks is computed. The concepts developed in this work result in robust and accurate peak models of ZrO 2 and Pd/ZrO 2 that can be applied in XPS analysis of not only ZrO 2 but other large bandgap or insulating material surfaces. Supporting arguments for a peak model representing signal from Zr 3p and Pd 3d are developed within this work are presented.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Lessons learned from first-principles calculations of transition metal oxides

Transition metal oxides (TMOs) are an important class of materials with diverse applications, ranging from memristors to photoelectrochemical cells. First-principles calculations are critical for understanding these complex materials at an atomic level and establishing relationships between atomic and electronic structures, particularly for probing quantities difficult or inaccessible to experiment. Here, we discuss computational strategies used to understand TMOs by focusing on two examples, a photoanode material, BiVO4, and an oxide for low-power electronics, La1−xSrxCoO3. We highlight key aspects required for the modeling of TMOs, namely, the descriptions of how oxygen vacancies, extrinsic doping, the magnetic state, and polaron formation impact their electronic and atomic structures and, consequently, many of the observed properties.

Vo, Hien (ORCID:0000000158315599)↗
NASA NTRS2003

Microcalorimeters for High Resolution X-Ray Spectroscopy of Laboratory and Astrophysical Plasmas

The proposal has three major objectives. The first focuses on advanced neutron-transmutation-doped (NTD)-based microcalorimeter development. Our goal is to develop an array of microcalorimeters with sub- 5 eV energy resolution that can operate with pile-up-free throughput of at least 100 Hz per pixel. The second objective is to establish our microcalorimeter as an essential x-ray diagnostic for laboratory astrophysics studies. We propose to develop a dedicated microcalorimeter spectrometer for the EBIT (electron beam ion trap). This instrument will incorporate the latest detector and cryogenic technology that we have available. The third objective is to investigate innovative ideas related to possible flight opportunities. These include compact, long lived cryo-systems, ultra-low temperature cold stages, low mass and low power electronics, and novel assemblies of thin windows with high x-ray transmission.

Silver, E.↗
DOE OSTI2025

Gate control of electron correlations towards Mott field effect transistors (MottFET)

The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors

The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1-nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here we report a facile approach to synthesize a uniform high-k (ε r ~ 22) amorphous native oxide Bi 2 SeO x on the 2D semiconducting Bi2O2Se using O 2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ~0.9 nm, while the original properties of underlying 2D Bi 2 O 2 Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi 2 O 2 Se is achieved to fabricate discrete electronic components. This facile integration of a 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Probing crystallographic orientation-specific carrier lifetimes in epitaxial Ge/AlAs and InGaAs/InP heterostructures

Current silicon (Si) fin transistors rely on (100) and (110) crystallographically oriented surfaces, and the proposed alternate channel transistor technology comprises materials with higher mobility than Si. Crystallographically oriented epitaxial germanium (Ge) and indium–gallium arsenide (InGaAs) have the potential to replace Si in ultra-low power transistor applications. The higher carrier lifetime is an indication of superior material quality, which relates to the leakage current of a fin transistor. To gain insights into the carrier recombination dynamics in these crystallographically oriented epitaxial Ge and InGaAs layers, the contactless microwave photoconductive decay (μ-PCD) technique at an excitation wavelength of 1500 nm was employed to probe the orientation-specific carrier lifetimes. Highly effective carrier lifetimes >200 ns for (100)Ge/AlAs and (110)Ge/AlAs, and ~80 ns for (111)Ge/AlAs heterostructures, were extracted at room temperature. The measured carrier lifetime has a strong dependence on the surface orientation, which could be related to orientation-specific bulk trap states present within the bandgap of Ge. The (111)Ge orientation has 3 times lower carrier lifetime compared to the (100)Ge and (110)Ge surface orientations. On the other hand, the carrier lifetimes of 125 μs and 10 ns were determined from (100)InGaAs/InP and (110)InGaAs/InP heterostructures, respectively. The reduction in carrier lifetimes in both (111)Ge and (110)InGaAs was due to high electrical conductivity or higher bulk trap states present within the bandgap as well as the facet-dependent growth of the (110)InGaAs layer on InP. A surface passivating layer is indispensable for these orientation-specific epitaxial layers to improve the carrier lifetime. Therefore, the higher carrier lifetimes from technologically interesting (100)Ge and (110)Ge surfaces would offer a path for the development of Ge-based ultra-low power electronics, and optoelectronic devices based on the (100)InGaAs layer.

36 MATERIALS SCIENCE↗
DOE OSTI2020

New approaches for achieving more perfect transition metal oxide thin films

This perspective considers the enormous promise of epitaxial functional transition metal oxide thin films for future applications in low power electronic and energy applications since they offer wide-ranging and highly tunable functionalities and multifunctionalities, unrivaled among other classes of materials. It also considers the great challenges that must be overcome for transition metal oxide thin films to meet what is needed in the application domain. These challenges arise from the presence of intrinsic defects and strain effects, which lead to extrinsic defects. Current conventional thin film deposition routes often cannot deliver the required perfection and performance. Since there is a strong link between the physical properties, defects and strain, routes to achieving more perfect materials need to be studied. Several emerging methods and modifications of current methods are presented and discussed. The reasons these methods better address the perfection challenge are considered and evaluated.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Studies in pulse shape discrimination for an optimized ASIC design

The continued advancements of Silicon Photomultipliers (SiPMs) have made them viable photosensors for low recoil energy Pulse Shape Discrimination (PSD) between fast neutron and gamma interactions when coupled to an appropriate scintillator. At the same time, the large number of channels in a typical array calls for the development of low-cost and low-power electronics. A custom integrated circuit (ASIC) is an ideal solution for this purpose. To assess the requirements for such an ASIC, studies were performed using two scintillators, Stilbene and EJ-276, coupled to a 6 x 6 mm SiPM from Onsemi. We demonstrate that both scintillators are viable for performing PSD for interaction energies from 100 keV to several MeV while optimizing the integration periods used in the PSD metric. These measurements inform the design parameters of the ASIC under development.

Si-PMTs↗
DOE OSTI2022

Thickness-dependent phase transition kinetics in lithium-intercalated MoS 2

The phase transitions of two-dimensional (2D) materials are key to the operation of many devices with applications including energy storage and low power electronics. Nanoscale confinement in the form of reduced thickness can modulate the phase transitions of 2D materials both in their thermodynamics and kinetics. Here, using in situ Raman spectroscopy we demonstrate that reducing the thickness of MoS 2 below five layers slows the kinetics of the phase transition from 2H- to 1T'-MoS 2 induced by the electrochemical intercalation of lithium. In this study, we observe that the growth rate of 1T' domains is suppressed in thin MoS 2 supported by SiO 2 , and attribute this growth suppression to increased interfacial effects as the thickness is reduced below 5 nm. In this study, the suppressed kinetics can be reversed by placing MoS 2 on a 2D hexagonal boron nitride ( h BN) support, which readily facilitates the release of strain induced by the phase transition. Additionally, we show that the irreversible conversion of intercalated 1T'-MoS 2 into Li2S and Mo is also thickness-dependent and the stability of 1T'-MoS 2 is significantly increased below five layers, requiring a much higher applied electrochemical potential to break down 1T'-MoS 2 into Li 2 S and Mo nanoclusters.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Valley-Coherent Quantum Anomalous Hall State in AB-Stacked MoTe 2 / W S e 2 Bilayers

Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed in both graphene and transition metal dichalcogenide (TMD) moiré materials. It is thought to arise from the interaction-driven valley polarization of the narrow moiré bands. Here, we show that the newly discovered QAH state in AB-stacked MoTe 2 / W S e 2 moiré bilayers is not valley polarized but valley coherent. The layer- and helicity-resolved optical spectroscopy measurement reveals that the QAH ground state possesses spontaneous spin (valley) polarization aligned (antialigned) in two TMD layers. In addition, saturation of the out-of-plane spin polarization in both layers occurs only under high magnetic fields, supporting a canted spin texture. Our results call for a new mechanism for the QAH effect and highlight the potential of TMD moiré materials with strong electronic correlations and spin-orbit interactions for exotic topological states. Published by the American Physical Society 2024

2-dimensional systems↗
DOE OSTI2023

Predictive Theory of Topological States of Matter (Final Report for DOE Award DE-SC0018945)

This DOE award supported the PI’s research on topological quantum materials between 2018 and 2021. The PI developed predictive theories for new classes of topological insulators and topological/unconventional superconductors and identified their material realizations in collaboration with experimentalists. The PI theorized new topological transport phenomena, including spin superfluidity in moire materials and the superconducting diode effect. Topological transport phenomena have potential applications in cryogenic computing, low-power electronics, high-frequency rectification, infrared detection, energy harvesting and thermoelectric application. By discovering new quantum materials and new functional properties, the PI’s research contributed significantly to the advancement of DOE scientific and technological base, especially in energy frontier research.

36 MATERIALS SCIENCE↗
NASA NTRS1998

GSFC Cutting Edge Avionics Technologies for Spacecraft

With the launch of NASA's first fiber optic bus on SAMPEX in 1992, GSFC has ushered in an era of new technology development and insertion into flight programs. Predating such programs the Lewis and Clark missions and the New Millenium Program, GSFC has spearheaded the drive to use cutting edge technologies on spacecraft for three reasons: to enable next generation Space and Earth Science, to shorten spacecraft development schedules, and to reduce the cost of NASA missions. The technologies developed have addressed three focus areas: standard interface components, high performance processing, and high-density packaging techniques enabling lower cost systems. To realize the benefits of standard interface components GSFC has developed and utilized radiation hardened/tolerant devices such as PCI target ASICs, Parallel Fiber Optic Data Bus terminals, MIL-STD-1773 and AS1773 transceivers, and Essential Services Node. High performance processing has been the focus of the Mongoose I and Mongoose V rad-hard 32-bit processor programs as well as the SMEX-Lite Computation Hub. High-density packaging techniques have resulted in 3-D stack DRAM packages and Chip-On-Board processes. Lower cost systems have been demonstrated by judiciously using all of our technology developments to enable "plug and play" scalable architectures. The paper will present a survey of development and insertion experiences for the above technologies, as well as future plans to enable more "better, faster, cheaper" spacecraft. Details of ongoing GSFC programs such as Ultra-Low Power electronics, Rad-Hard FPGAs, PCI master ASICs, and Next Generation Mongoose processors.

Luers, Philip J.↗
NASA NTRS1999

The New Millennium Program: Validating Advanced Technologies for Future Space Missions

This presentation reviews the activities of the New Millennium Program (NMP) in validating advanced technologies for space missions. The focus of these breakthrough technologies are to enable new capabilities to fulfill the science needs, while reducing costs of future missions. There is a broad spectrum of NMP partners, including government agencies, universities and private industry. The DS-1 was launched on October 24, 1998. Amongst the technologies validated by the NMP on DS-1 are: a Low Power Electronics Experiment, the Power Activation and Switching Module, Multi-Functional Structures. The first two of these technologies are operational and the data analysis is still ongoing. The third program is also operational, and its performance parameters have been verified. The second program, DS-2, was launched January 3 1999. It is expected to impact near Mars southern polar region on 3 December 1999. The technologies used on this mission awaiting validation are an advanced microcontroller, a power microelectronics unit, an evolved water experiment and soil thermal conductivity experiment, Lithium-Thionyl Chloride batteries, the flexible cable interconnect, aeroshell/entry system, and a compact telecom system. EO-1 on schedule for launch in December 1999 carries several technologies to be validated. Amongst these are: a Carbon-Carbon Radiator, an X-band Phased Array Antenna, a pulsed plasma thruster, a wideband advanced recorder processor, an atmospheric corrector, lightweight flexible solar arrays, Advanced Land Imager and the Hyperion instrument

Minning, Charles P.↗
NASA NTRS2007

Development of a Tunable Electromechanical Acoustic Liner for Engine Nacelles

This report describes the development of a tunable electromechanical Helmholtz resonator (EMHR) for engine nacelles using smart materials technology. This effort addresses both near-term and long-term goals for tunable electromechanical acoustic liner technology for the Quiet Aircraft Technology (QAT) Program. Analytical models, i.e. lumped element model (LEM) and transfer matrix (TM) representation of the EMHR, have been developed to predict the acoustic behavior of the EMHR. The models have been implemented in a MATLAB program and used to compare with measurement results. Moreover, the prediction performance of models is further improved with the aid of parameter extraction of the piezoelectric backplate. The EMHR has been experimentally investigated using standard two-microphone method (TMM). The measurement results validated both the LEM and TM models of the EMHR. Good agreement between predicted and measured impedance is obtained. Short- and open circuit loads define the limits of the tuning range using resistive and capacitive loads. There is approximately a 9% tuning limit under these conditions for the non-optimized resonator configuration studied. Inductive shunt loads result in a 3 degree-of-freedom DOF) system and an enhanced tuning range of over 20% that is not restricted by the short- and open-circuit limits. Damping coefficient ' measurements for piezoelectric backplates in a vacuum chamber are also performed and indicate that the damping is dominated by the structural damping losses, such as compliant boundaries, and other intrinsic loss mechanisms. Based on models of the EMHR, a Pareto optimization design of the EMHR has been performed for the EMHR with non-inductive loads. The EMHR with non-inductive loads is a 2DOF system with two resonant fiequencies. The tuning ranges of the two resonant frequencies of the EMHR with non-inductive loads cannot be optimized simultaneously; a trade-off (i.e., a Pareto solution) must be reached. The Pareto solution provides the information for a designer that shows how design trade-offs can be used to satisfy specific design requirements. The optimization design of the EMHR with inductive loads aims at optimal tuning of these three resonant fiequencies. The results indicate that it is possible to keep the acoustic reactance of the resonator close to a constant over a given frequency range. An effort to mimic the second layer of the NASA 2DOF liner using a piezoelectric composite diaphragm has been made. The optimal acoustic reactance of the second layer of the NASA 2DOF liner is achieved using a thin PVDF composite diaphragm, but matching the acoustic resistance requires further investigation. Acoustic energy harvesting is achieved by connecting the EMHR to an energy reclamation circuit that converts the ac voltage signal across the piezoceramic to a conditioned dc signal. Energy harvesting experiment yields 16 m W continuous power for an incident SPL of 153 dB. Such a level is sufficient to power a variety of low power electronic devices. Finally, technology transfer has been achieved by converting the original NASA ZKTL FORTRAN code to a MATLAB code while incorporating the models of the EMHR. Initial studies indicate that the EMHR is a promising technology that may enable lowpower, light weight, tunable engine nacelle liners. This technology, however, is very immature, and additional developments are required. Recommendations for future work include testing of sample EMHR liner designs in NASA Langley s normal incidence dual-waveguide and the grazing-incidence flow facility to evaluating both the impedance characteristics as well as the energy reclamation abilities. Additional design work is required for more complex tuning circuits with greater performance. Poor electromechanical coupling limited the electromechanical tuning capabilities of the proof of concept EMHR. Different materials than those studies and perhaps novel composite material systems may dramatically improvehe electromechanical coupling. Such improvements are essential to improved mimicking of existing double layer liners.

Liu, Fei↗