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In quadruple sampling, signal from each element in array is sampled once before element is clamped on, twice during "on" period, once again after element is turned off. Quadruple-sampling scheme increases overall signal-to-noise by about 40 percent above level for double sampling, prediction verified by measurements on star-tracking imager.
A planar endfire slotted-line antenna structure was investigated. It was found that the H-plane beamwidths are basically dependent upon the substrate properties, whereas the E-plane beamwidths are more strongly a function of the slot's shape and size. It is shown that these antennas produce symmetrical E and H-plane beamwidths while following Zucker's standard traveling-wave antenna beamwidth curves over some range of antenna normalized length. An empircally derived design formula for effective substrate thickness is shown to predict this range for linearly tapered slotted-line antennas. The experimental imaging properties of these arrays are presented and imaging theory is discussed. It is shown that a minimum spacing of elements is necessary for exact reconstruction for a sampled image in a diffraction limited system. Because these LTSA elements employ the traveling-wave mechanism of radiation, they can be spaced two times closer than a conical feed horn of comparable beamwidth.
When arrays are used to collect multiple appropriately-dithered images of the same region of sky, the resulting data set can be calibrated using a least-squares minimization procedure that determines the optimal fit between the data and a model of that data. The model parameters include the desired sky intensities as well as instrument parameters such as pixel-to-pixel gains and offsets. The least-squares solution simultaneously provides the formal error estimates for the model parameters. With a suitable observing strategy, the need for separate calibration observations is reduced or eliminated. We show examples of this calibration technique applied to HST NICMOS observations of the Hubble Deep Fields and simulated SIRTF IRAC observations.
We describe progress in the fabrication, characterization, and production of detector arrays for the Atacama Cosmology Telescope (ACT). The completed ACT instrument is specified to image simultaneously at 145, 225, and 265 GHz using three 32x32 filled arrays of superconducting transition edge sensors (TES) read out with time-division-multiplexed SQUID amplifiers. We present details of the pixel design and testing including the optimization of the electrical parameters for multiplexed readout. Using geometric noise suppression and careful tuning of operation temperature and device bias resistance, the excess noise in the TES devices is balanced with detector speed for interfacing with the ACT optics. The design also accounts for practical tolerances such as transition temperature gradients and scatter that occur in the production of multiple wafers to populate fully the kilopixel cameras. We have developed an implanted absorber layer compatible with our silicon-on-insulator process that allows for tunable optical resistance with requisite on-wafer uniformity and wafer-to-wafer reproducibility. Arrays of 32 elements have been tested in the laboratory environment including electrical, optical, and multiplexed performance. Given this pixel design, optical tests and modeling are used to predict the performance of the filled array under anticipated viewing conditions. Integration of the filled array of pixels with a tuned backshort and dielectric plate in front of the array maximize absorption and the focal plane and suppress reflections. A mechanical design for the build of the full structure is completed and we report on progress toward the construction of a prototype array for first light on the ACT.
Photodiodes, multiplexer, and preamp reside in hybrid ceramic package. Hybrid microcircuit produces 128-element line images of infrared scenes. Each picture element is 0.008-in. (0.2-mm) square. Even without image data processing, microcircuit resolves temperature differences as small as 0.05 degrees C in infrared images.
The paper demonstrates the detection of infrared radiation and signal readout on a monolithic InSb charge coupled infrared imaging device. The device is a 20-element linear imager with MOS detectors coupled to a four-phase, surface-channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for zero input and charge readout. Sensitivity measurements on the MOS infrared detectors were determined for the 20-element array. Data are presented on the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both multiplexed and a time delay and integration (TDI) mode. Plans are discussed for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager.
A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.
A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).
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Large-format and multi-band focal plane arrays (FPA) based on quantum well and quantum dot infrared photodetectors have been developed for various instruments such as imaging interferometers and hyperspectral imagers. The spectral response of these detectors are tailorable within the mid- and long-wavelength infrared bands.
A prototype 700 GHz subharmonically pumped superconductor-insulator-superconductor (SIS) mixer integrated with a tapered slot antenna on a silicon substrate is described. Imaging using integrated SIS-mixer-antenna chips is discussed.
This oral presentation discusses the delta-doped CCD concept and process.
The Summertime Line Intensity Mapper (SLIM) is a mm-wave line-intensity mapping (mm-LIM) experiment for the South Pole Telescope (SPT). The goal of SPT-SLIM is to serve as a technical and scientific pathfinder for the demonstration of the suitability and in-field performance of multi-pixel superconducting filterbank spectrometers for future mm-LIM experiments. Scheduled to deploy in the 2023-24 austral summer, the SPT-SLIM focal plane will include 18 dual-polarisation pixels, each coupled to an $R = \lambda / \Delta \lambda = 300$ thin-film microstrip filterbank spectrometer that spans the 2 mm atmospheric window (120–180 GHz). Each individual spectral channel feeds a microstrip-coupled lumped-element kinetic inductance detector, which provides the highly multiplexed readout for the 10k detectors needed for SPT-SLIM. Here, we present an overview of the preliminary design of key aspects of the SPT-SLIM focal plane array, a description of the detector architecture and predicted performance, and initial test results that will be used to inform the final design of the SPT-SLIM spectrometer array.
Current concern for ensuring, the air-worthiness of the aging commercial air fleet has prompted the establishment of broad-agency programs to develop NDT technologies that address specific aging-aircraft issues. One of the crucial technological needs that has been identified is the development of rapid, quantitative systems for depot-level inspection of bonded aluminum lap joints on aircraft. Research results for characterization of disbond and corrosion based on normal-incidence pulse-echo measurement geometries are showing promise, but are limited by the single-site nature of the measurement which requires manual or mechanical scanning to inspect an area. One approach to developing efficient systems may be to transfer specific aspects of current medical imaging technology to the NDT arena. Ultrasonic medical imaging, systems offer many desirable attributes for large scale inspection. They are portable, provide real-time imaging, and have integrated video tape recorder and printer capabilities available for documentation and post-inspection review. Furthermore, these systems are available at a relatively low cost (approximately $50,000 to $200,000) and can be optimized for use with metals with straight-forward modifications.
The invention provides a method of triple-beam and triple-sensor in a laser speckle strain/deformation measurement system. The triple-beam/triple-camera configuration combined with sequential timing of laser beam shutters is capable of providing indications of surface strain and structure deformations. The strain and deformation quantities, the four variables of surface strain, in-plane displacement, out-of-plane displacement and tilt, are determined in closed form solutions.
Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.
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