Disentangling electronic and phononic contributions to high-temperature superconductivity in X2MH6 hydrides
Explore the source record for details and available documents.
Zheng, Feng (ORCID:0000000194827057)↗
SEARCH · Engineering Papers
Results for “high temperature electronics”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
A Novel High-Temperature Generator/Motor Design: With Applications in Geothermal Drilling and Other Industries
The National Renewable Energy Laboratory (NREL), in partnership with Tetra Corporation and TPL Inc, has an ongoing ARPA-E project related to an advanced high-temperature geothermal drilling system, and the power electronics necessary for this system. As part of this work, NREL designed, built and tested a high-temperature generator for power generation in a 250 degrees Celsius downhole drilling environment. This design exceeded initial performance targets at elevated temperature. NREL is investigating alternative applications for this design, as either a generator or motor capable of efficient performance at high temperature.
alternator↗
High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching
2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field-effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at low carrier concentration. Here, it is shown that few-layer/multilayer SnSe 2 gated by a solution top gate combines very high room-temperature electron mobility (up to 800 cm 2 V −1 s −1 ), along with large on-off current ratios (>10 5 ) and a subthreshold swing below the thermodynamic limit (50 mV per decade) in field-effect devices, at exceptionally large sheet carrier concentrations of ≈10 13 cm −2 . Observed mobility enhancements upon partial depletion of the channel point to near-surface defects or impurities as the mobility-limiting scattering centers. Under illumination, the resulting gap states give rise to gate-controlled switching between positive and negative photoconductance. The results qualify SnSe 2 as a promising layered semiconductor for flexible and wearable electronics, as well as for the realization of advanced approaches to photodetection.
36 MATERIALS SCIENCE↗
Ferroelectric epitaxial Al(Sc/B)N/Mo/SiC heterostructures for high operating temperature devices
Advances in wurtzite nitride ferroelectrics of Al 1-x M x N ( M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating > 200°C, a movement toward SiC-based platforms enables better performance over conventional Si, primarily due to the higher bandgap and lower intrinsic carrier concentration of SiC. Hence, the challenge is to develop a deposition process to integrate Al 1-x M x M x N ferroelectrics with elevated temperature-compatible materials for high temperature electronics such as the non-volatile memory component. We demonstrate epitaxial Al M N/Mo/SiC heterostructures, which provides both the crystalline and surface features that promote high-quality ferroelectric nitride film growth. Omega scans of the Mo (110) reflection exhibit a full width at half max of < 0.02° (40 arc sec) and the (0002) peak of the subsequently grown nitride film had a value of 1.1° for 160 nm thick Al 0.7 Sc 0.3 N and 1.3° for 400 nm thick Al 0.94 B 0.06 N. The crystallographic relationships found between the Al M N, Mo, and SiC layers indicate an advancement in sputter deposition of epitaxial films. Ferroelectric switching is also shown at 400 °C in both samples via polarization-electric field hysteresis and pulsed measurements, which exhibited P r values >100 μC cm -2 and E c between 3 and 4 M V cm -1 , despite a large presence of oxygen in both Al M N films ranging between 4 and 5 at.%, revealed by compositional analysis. This study demonstrates the process for synthesizing high-crystal quality ferroelectric nitride films, which can be used in extremely high temperature applications.
74 ATOMIC AND MOLECULAR PHYSICS↗
High power density compact drive integrated motor for electric transportation
This project, initially part of OPEN 2018, and subsequently the ASCEND effort, targeted demonstration of significant enhancements in internal permanent magnet (IPM) motor torque and power density for current and future ground and air electric transportation applications. These were achieved through: (1) embedded two-phase system thermal management, (2) coupled, multi-scale electrical-electromagnetic-thermal-mechanical co-design and optimization, (3) size and weight reduction of motor and drive electronics through elimination of redundant cooling and coupling hardware, and (4) higher efficiency operation of SiC wide bandgap power electronics packaging through high temperature operation (200 oC). The proposed approach utilizes a single dielectric coolant for closed loop two-phase thermal management, and a combined heat rejection unit for the IPM and drive. Wick assisted liquid delivery for evaporative thermal management is utilized for the motor, and the drive electronics utilize the same coolant in flow boiling within the cold plate structures. Through the use of three-dimensional packaging for SiC, and novel drive topologies with reduced switching losses, significant increases in power density and compactness were targeted.
33 ADVANCED PROPULSION SYSTEMS↗
Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors
Multi-material, multi-layered systems such as AlGaN/GaN high electron mobility transistors (HEMTs) contain residual mechanical stresses that arise from sharp contrasts in device geometry and materials parameters. These stresses, which can be either tensile or compressive, are difficult to detect and eliminate because of their highly localized nature. We propose that their high-stored internal energy makes potential sites for defect nucleation sites under radiation, particularly if their locations coincide with the electrically sensitive regions of a transistor. In this study, we validate this hypothesis with molecular dynamic simulation and experiments exposing both pristine and annealed HEMTS to 2.8 MeV Au +3 irradiation. Our unique annealing process uses mechanical momentum of electrons, also known as the electron wind force (EWF) to mitigate the residual stress at room temperature. High-resolution transmission electron microscopy and cathodoluminescence spectra reveal the reduction of point defects and dislocations near the two-dimensional electron gas region of EWF-treated devices compared to pristine devices. The EWF-treated HEMTs showed relatively higher resilience with approximately 10% less degradation of drain saturation current and ON-resistance and 5% less degradation of peak transconductance. Both mobility and carrier concentration of the EWF-treated devices were less impacted compared to the pristine devices. Our results suggest that the lower density of nanoscale stress localization contributed to the improved radiation tolerance of the EWF-treated devices. Intriguingly, the EWF is found to modulate the defect distribution by moving the defects to electrically less sensitive regions in the form of dislocation networks, which act as sinks for the radiation induced defects and this assisted faster dynamic annealing.
AlGaN/GaN HEMTs↗
Nanoscale Tracking of the High-Temperature Spin-State Transition in LaCoO 3
The high-temperature spin and electronic transitions in LaCoO 3 have recently been leveraged to create neuromorphic (brain-inspired) devices. While these devices have shown the potential for impactful functionality in next-generation computing systems, the nanoscale dynamics of the spin and electronic transitions that underlie their operation are not well understood. Inhomogeneities related to interfaces, electrode contacts, strain, and crystal defects can all affect device performance, making nanoscale characterization of the transitions essential for producing consistent and reliable devices. Here, we demonstrate the first nanoscale in situ measurement of the spin transition in LaCoO 3 at device-relevant temperatures (25–325 °C) over length scales of tens of nanometers using STEM-EELS. This measurement is enabled by an Al 2 O 3 coating, which prevents unwanted reduction of the LaCoO 3 specimen at high temperature and vacuum. The detailed understanding of LaCoO 3 transition dynamics enabled by such measurements will be crucial for optimizing LaCoO 3 -based neuromorphic devices and increasing reliability for real-world application.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Progress in Extending the High-Temperature Plasma Regime in the LHD
In this paper, we show the expansion of the high-temperature regime and related physical phenomena in the Large Helical Device (LHD). At the LHD, we have developed a high-temperature operational regime for both ion (T i ) and electron (T e ) temperatures through understanding the physical characteristics of high-temperature plasma, the enhancement of plasma heating, and the development of technical methods such as wall recycling control and impurity control. In particular, the formation of the ion internal transport barrier (i-ITB) and electron internal transport barrier (e-ITB) in the plasma core region is the key to improving plasma performance. In addition, the deuterium experiment that began in 2017 showed that, due to the isotope effect, the thermal transport of both ions and electrons is suppressed in deuterium plasma compared to light hydrogen plasma, and that a high central temperature can be achieved efficiently. Furthermore, the combination of neutral beam injection (NBI) and electron cyclotron heating (ECH) has extended the operating conditions that simultaneously maintain high T i and T e , and comprehensive research on plasma confinement characteristics with an eye to future fusion reactor conditions has progressed.
Large Helical Device↗
Topological phase transition to a hidden charge density wave liquid
Charge density waves (CDWs), electronic crystals that form within a host solid, have long been speculated to melt into a spatially textured electronic liquid. Though they have not been previously detected, liquid CDWs may nonetheless be fundamental to the phase diagrams of many correlated electron systems, including high temperature superconductors and quantum Hall states. In one of the most promising candidate materials capable of hosting a liquid CDW, 1T-TaS2, a structural phase transition impedes its observation. Here, by irradiating the material with a femtosecond light pulse, we circumvent the structural phase transition to reveal how topological defect dynamics govern the otherwise invisible CDW correlations. Upon photoexcitation, the CDW diffraction peaks broaden azimuthally, initially revealing a hexatic state. At higher temperatures, photoexcitation completely destroys translational and orientational order and only a ring of diffuse scattering is observed, a key signature of a liquid CDW. Our work provides compelling evidence for a defect-unbinding transition to a CDW liquid and presents a protocol for uncovering states that are hidden by other transitions in thermal equilibrium.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Characterization of γ′/γ″ compact and sandwich type precipitates during long-term high-temperature exposure in Ni-based superalloys
Here, the formation of γ′/γ″ co-precipitates is investigated in Ni-based superalloys with a varying Ti/Al ratio and Ta content and their stability is studied using long-term high-temperature exposure. Transmission electron microscopy and atom probe tomography analyses demonstrate that both higher Ti/Al ratios and increased Ta promote γ″ phase formation, leading to sandwich and compact structures. The compact co-precipitation significantly reduces γ′ precipitate coarsening during 10,000 h exposure at 700°C by restricting elemental diffusion, particularly of aluminum, from the γ matrix to the γ′ phase. For the alloy without a compact structure, and only γʹ precipitates, at the beginning of the exposure, the coarsening rate over 10,000 h was 3.5 times faster than for the alloy with compact γʹ/γʺ precipitates. Evidence of destabilization of the compact morphology was found to occur between 5,000 and 10,000 h exposure and originated from the extensive formation and growth of δ platelets that extended throughout the grains. Thus, the outer layer of the compact, which consists of γʺ, was subjected to the γ″ to δ phase transformation.
gamma double prime↗
Spherical tokamak physics research in preparation for the operation of NSTX-U
The National Spherical Torus Experiment Upgrade (NSTX-U) is preparing to resume operation, representing a crucial step toward realizing compact, cost-effective fusion pilot plants. In advance of this, extensive modeling and data analysis have been conducted to advance the physics basis for low-aspect-ratio, high-performance plasma regimes, focusing on three core objectives: confinement and stability, power and particle handling, and steady-state operation. Significant progress has been made in understanding the electron temperature flattening in high-β plasmas, which is shown to be driven by a complex interplay of magnetohydrodynamic instabilities (e.g. non-resonant infernal modes), fast-ion-driven Alfvén eigenmodes, and electron and ion-scale micro-instabilities, particularly Kinetic Ballooning Modes (KBMs), whose destabilization is strongly dependent on parallel magnetic field fluctuations (δB ∥ ). Furthermore, a new gyrokinetic critical pedestal model was developed, accurately predicting pedestal structure by identifying KBMs as the primary stability limit, offering a critical constraint for future high-confinement scenarios. To address the challenge of high heat flux, novel liquid lithium plasma-facing components were modeled. The analysis confirmed that lithium vapor shielding is a self-regulating mechanism for heat mitigation, while also emphasizing that strong main ion parallel flow is essential to minimize core lithium contamination. Finally, progress toward steady-state operation was anchored by developing the required physics basis and control tools. This includes predictive modeling for reversed magnetic shear sustainment, demonstrating that magnetic island-induced bootstrap current reduction is negligible in STs, and advancing real-time control and disruption avoidance capabilities. The development of high-speed surrogate models (e.g. MMMNet) provides computationally efficient tools vital for non-inductive scenario optimization and integrated, low-disruptivity operations planned for NSTX-U.
NSTX-U↗
Electronic Spin Relaxation and Clustering in High-Pressure High-Temperature Synthesized Microcrystalline Diamond Particles with Reduced Nitrogen Content
The negatively charged nitrogen-vacancy (NV – ) color center in diamonds is widely studied because of numerous applications of this unique quantum system in sensing and quantum information sciences. While substitutional nitrogen is required to form the NV – centers in diamond, it also yields other paramagnetic defects─primarily the neutrally charged substitutional nitrogen centers (P1)─that decrease NV – spin coherence, which in turn degrades performance in applications. Herein, we investigate high-pressure high-temperature synthesized diamond microparticles (ca. 140–185 μm) having lower─ranging from 3 to 38 ppm─than the typical nitrogen content of type 1b diamond ( ca. 100 ppm and higher) typically used for the production of fluorescent diamond particles with NV – centers. A suite of electron paramagnetic resonance, optically detected magnetic resonance, and nuclear magnetic resonance methods are used to characterize spin properties of P1 and NV – centers in the particles. Upon decreasing the nitrogen content from 29 to 3 ppm, the ensemble NV – T 2 relaxation time increased by about 3-fold as measured directly in the Hahn Echo experiment at magnetic field of 1.2 T. Analysis of electronic relaxation of P1 centers revealed the existence of at least two distinct populations of P1 centers, consisting of fast and slower relaxing spins and allowed for an estimation of local concentrations. Even with <10 ppm nitrogen contents, the analysis indicated a highly heterogeneous distribution of P1 centers, suggesting the possibility of P1 spin clustering even at low nitrogen concentrations. The combined data demonstrate that the particles prepared from HPHT diamond with a low nitrogen content offer improved spin properties that are beneficial for NV – sensing applications.
Carbon↗
First-principles electron-phonon interactions and polarons in the parent cuprate La 2 CuO 4
Understanding electronic interactions in high-temperature superconductors is an outstanding challenge. In the widely studied cuprate materials, experimental evidence points to strong electron-phonon ( e -ph) coupling and broad photoemission spectra. Yet, the microscopic origin of this behavior is not fully understood. Here, we study e -ph interactions and polarons in a prototypical parent (undoped) cuprate, La 2 CuO 4 (LCO), by means of first-principles calculations. Leveraging parameter-free Hubbard-corrected density functional theory, we obtain a ground state with the band gap and Cu magnetic moment in nearly exact agreement with experiments. This enables a quantitative characterization of e -ph interactions. Our calculations reveal two classes of longitudinal optical (LO) phonons with strong e -ph coupling to hole states. These modes consist of bond stretching and bond bending in the Cu-O plane as well as vibrations of apical O atoms. The hole spectral functions, obtained with a cumulant method that can capture strong e -ph coupling, exhibit broad quasiparticle peaks with a small spectral weight ( Z ≈ 0.25 ) and pronounced LO-phonon sidebands characteristic of polaron effects. Our calculations predict features observed in photoemission spectra, including a 40-meV peak in the e -ph coupling distribution function not explained by existing models. These results show that the universal strong e -ph coupling found experimentally in doped lanthanum cuprates is also present in the parent compound, and elucidate its microscopic origin. Published by the American Physical Society 2025
Chang, Benjamin K. (ORCID:0000000313049324)↗
Optimal control of the electron temperature profile in DIII-D using machine learning surrogate models
The viability of the tokamak as a potential fusion reactor depends on the ability to keep the plasma in a stable regime while achieving temperatures, densities, and confinement times that are as high as possible. Tokamak scenario development attempts to find plasma regimes that achieve all of these conditions and are accessible with a given set of hardware constraints. This requires the ability to control plasma properties such as the normalized beta, the internal inductance, safety factor, rotation, etc. One property that has received less attention than some of the others, but is no less critical to achieving high performance, is the electron temperature (T e ) profile. In this work, Linear Quadratic Integral (LQI) control is used to develop a controller for the electron temperature profile in DIII-D. The controller is based on a linearized model derived from the transport equation that describes the evolution of the electron temperature, and includes contributions from the neural network surrogate models NubeamNet and MMMnet. Furthermore, the controller is tested in simulation using COTSIM, and is proven capable of tracking a target T e profile.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Topochemical Oxidation of Ruddlesden–Popper Nickelates Reveals Distinct Structural Family: Oxygen-Intercalated Layered Perovskites
Layered perovskites─including the Dion–Jacobson, Ruddlesden–Popper, and Aurivillius families─exhibit a wide range of correlated electron phenomena, from high-temperature superconductivity to multiferroicity. Here, in this study, we report a new family of layered perovskites realized through topochemical oxidation of La n+1 Ni n O 3n+1+δ (n = 1–4) Ruddlesden–Popper nickelate thin films. Postgrowth ozone annealing induces a substantial c-axis expansion─17.8% for La 2 NiO 4+δ (n = 1)─that monotonically decreases with increasing n. Surface synchrotron X-ray diffraction and coherent Bragg rod analysis (COBRA) reveal that this structural expansion arises from the intercalation of approximately δ ≈ 0.7–1.0 oxygen atoms into interstitial sites within the rock salt spacer layers, far exceeding the previous record of δ ≈ 0.3 for any Ruddlesden–Popper oxide. These oxygen-intercalated phases form a new class of layered perovskites with a spacer layer composition intermediate between the Ruddlesden–Popper and Aurivillius phases. Furthermore, oxygen intercalation induces metallicity, enhances nickel–oxygen hybridization, and suppresses oxygen octahedral rotations, a feature associated with high-temperature superconductivity in Ruddlesden–Popper nickelates. Our work establishes topochemical oxidation as a powerful approach to accessing highly oxidized, metastable phases across a broad range of layered oxide systems, offering new platforms to engineer electronic properties via intercalation chemistry.
Ferenc Segedin, Dan [Harvard Univ., Cambridge, MA ↗
Unified Description of Cuprate Superconductors by Fractionalized Electrons Emerging from Integrated Analyses of Photoemission Spectra and Quasiparticle Interference
Electronic structure of high-temperature superconducting cuprates is studied by analyzing experimental data independently obtained from two complementary spectroscopies: one, quasiparticle interference (QPI) measured by scanning-tunneling microscopy, and the other, angle-resolved photoemission spectroscopy (ARPES). We combine these two sets of data in a unified theoretical analysis. Through explicit calculations of experimentally measurable quantities, we show that a simple two-component fermion model (TCFM) representing electron fractionalization succeeds in reproducing various detailed features of these experimental data: ARPES and QPI data are concomitantly reproduced by the TCFM in full energy and momentum spaces. The measured QPI pattern reveals a signature characteristic of the TCFM, distinct from the conventional single-component prediction, supporting the validity of the electron fractionalization in the cuprates. The integrated analysis also solves the puzzles of ARPES and QPI data that are seemingly inconsistent with each other. The overall success of the TCFM offers a comprehensive understanding of the electronic structure of the cuprates, in particular, the unoccupied side of the spectra, of which momentum-resolved structure has long been unexplored experimentally. We further predict that a characteristic QPI pattern should appear in the unoccupied high-energy part if the fractionalization is at work. We propose that integrated-spectroscopy analyses offer a promising way to explore challenging issues of strongly correlated electron systems.
Sakai, Shiro [Sophia University; RIKEN Center for ↗
Electronic response of a Mott insulator at a current-induced insulator-to-metal transition
The Mott insulator Ca 2 RuO 4 exhibits an insulator-to-metal transition induced by d.c. current. Despite the thorough examination of the structural changes associated with this transition, a comprehensive knowledge of the response of electronic degrees of freedom is still lacking. Here we demonstrate current-induced modifications of the electronic states of Ca 2 RuO 4 . Angle-resolved photoemission spectroscopy in conjunction with four-probe electrical transport (transport-ARPES) measurements reveal a clear reduction of the Mott gap and a modification in the dispersion of the Ru bands. Based on a free-energy analysis, we show that the current-induced phase is electronically distinct from the high-temperature zero-current metallic phase. Our results highlight strong interplay of lattice- and orbital-dependent electronic responses in the current-driven insulator-to-metal transition.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Generative Physics-Informed Neural Network Solving Multi-Scale and Multi-Phase Plasma Chemical Flow Field
Low-temperature plasmas (LTPs) are non-equilibrium systems with near-room-temperature gas and highly energetic electrons. This makes them ideal for delicate applications in biomedicine and semiconductor manufacturing, enabling processes like wound healing, sterilization, etching, and plasma-enhanced chemical vapor deposition without thermal damage. However, LTPs involve complex chemistries, with hundreds of species and thousands of reactions, complicating their diagnosis, prediction, and control. Conventional diagnostics, such as Fourier-transform infrared spectroscopy (FTIR), laser-induced fluorescence (LIF), and optical emission spectroscopy (OES), offer limited species detection, while mass spectrometry (MS) struggles with low-sensitivity species. Additionally, LTP simulations face multi-scale challenges, as macroscopic fluid dynamics and microscopic particle collisions operate on vastly different timescales. To address these issues, we developed an artificial intelligence (AI) based diagnostic system: a generative physics-informed neural network (PINN-Gen) that can predict spatially resolved species concentrations and temperatures in LTPs by integrating experimental data from planar LIF with microscopic plasma chemical kinetics and macroscopic fluid mechanics, including plasma-liquid interactions at the interface between two phases. PINN-Gen solves no equations but checks the errors of physical laws by substituting the output from neural network, and the comparison with the experimental results. Thus, it naturally avoids the multi-scale difficulty of numerical simulations and predicts the results of conventionally unsolvable multi-scale and multi-phase problems. The real-time prediction will be robust due to the physical information used in the training of such a neural network, and only very limited input of condition required due to its generative feature.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗