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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Stuffed MO layer as a diffusion barrier in metallizations for high temperature electronics

Auger electron spectroscopy was employed to characterize the diffusion barrier properties of molybdenum in the CrSi2/Mo/Au metallization system. The barrier action of Mo was demonstrated to persist even after 2000 hours annealing time at 300 C in a nitrogen ambient. At 340 C annealing temperature, however, rapid interdiffusion was observed to have occurred between the various metal layers after only 261 hours. The presence of controlled amounts of oxygen in the Mo layer is believed to be responsible for suppressing the short circuit interdiffusion between the thin film layers. Above 340 C, its is believed that the increase in the oxygen mobility led to deterioration of its stuffing action, resulting in the rapid interdiffusion of the thin film layers along grain boundaries.

Boah, J. K.↗
NASA NTRS1991

High temperature electronic excitation and ionization rates in gases

The relaxation times for electronic excitation due to electron bombardment of atoms was found to be quite short, so that electron kinetic temperature (T sub e) and the electron excitation temperature (T asterisk) should equilibrate quickly whenever electrons are present. However, once equilibrium has been achieved, further energy to the excited electronic states and to the kinetic energy of free electrons must be fed in by collisions with heavy particles that cause vibrational and electronic state transitions. The rate coefficients for excitation of electronic states produced by heavy particle collision have not been well known. However, a relatively simple semi-classical theory has been developed here which is analytic up to the final integration over a Boltzmann distribution of collision energies; this integral can then be evaluated numerically by quadrature. Once the rate coefficients have been determined, the relaxation of electronic excitation energy can be evaluated and compared with the relaxation rates of vibrational excitation. Then the relative importance of these two factors, electronic excitation and vibrational excitation by heavy particle collision, on the transfer of energy to free electron motion, can be assessed.

Hansen, Frederick↗
NASA NTRS1992

Evaluation of the Benefits of High Temperature Electronics for Lunar Power Systems

A comparative evaluation is conducted of several approaches to the cooling of a lunar power system's power electronics, in view of the 400 K temperature of the 354-hour lunar day and lunar dust accumulation, which can contaminate power components and radiator surfaces. It is noted that, by raising the power electronics' baseplate temperature to 480 K, no thermal control system is required; the surface of the baseplate acts as its own, waste-heat-rejecting radiator, but the baseplate must be kept clean of lunar dust contamination.

Fay, Edgar H.↗
NASA NTRS1991

High temperature power electronics for space

A high temperature electronics program at NASA Lewis Research Center focuses on dielectric and insulating materials research, development and testing of high temperature power components, and integration of the developed components and devices into a demonstrable 200 C power system, such as inverter. An overview of the program and a description of the in-house high temperature facilities along with experimental data obtained on high temperature materials are presented.

Hammoud, Ahmad N.↗
NASA NTRS2001

Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems

High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as sensors and electronics for space missions to the inner solar system, sensors for in situ combustion and emission monitoring, and electronics for combustion control for aeronautical and automotive engines. However, these devices cannot be used until they can be packaged in appropriate forms for specific applications. Suitable packaging technology for operation temperatures up to 500 C and beyond is not commercially available. Thus, the development of a systematic high-temperature packaging technology for SiC-based microsystems is essential for both in situ testing and commercializing high-temperature SiC sensors and electronics. In response to these needs, researchers at Glenn innovatively designed, fabricated, and assembled a new prototype electronic package for high-temperature electronic microsystems using ceramic substrates (aluminum nitride and aluminum oxide) and gold (Au) thick-film metallization. Packaging components include a ceramic packaging frame, thick-film metallization-based interconnection system, and a low electrical resistance SiC die-attachment scheme. Both the materials and fabrication process of the basic packaging components have been tested with an in-house-fabricated SiC semiconductor test chip in an oxidizing environment at temperatures from room temperature to 500 C for more than 1000 hr. These test results set lifetime records for both high-temperature electronic packaging and high-temperature electronic device testing. As required, the thick-film-based interconnection system demonstrated low (2.5 times of the room-temperature resistance of the Au conductor) and stable (decreased 3 percent in 1500 hr of continuous testing) electrical resistance at 500 C in an oxidizing environment. Also as required, the electrical isolation impedance between printed wires that were not electrically joined by a wire bond remained high (greater than 0.4 GW) at 500 C in air. The attached SiC diode demonstrated low (less than 3.8 W/mm2) and relatively consistent dynamic resistance from room temperature to 500 C. These results indicate that the prototype package and the compatible die-attach scheme meet the initial design standards for high-temperature, low-power, and long-term operation. This technology will be further developed and evaluated, especially with more mechanical tests of each packaging element for operation at higher temperatures and longer lifetimes.

Chen, Liang-Yu↗
NASA NTRS1990

Perspectives on high temperature superconducting electronics

The major challenges in making high temperature superconducting (HTSC) electronics viable are predominantly materials problems. Unlike their predecessors the metal oxide-based superconductors are integratable with other advanced technologies such as opto-electronics and micro-electronics. The materials problems to be addressed relate to the epitaxial growth of high quality films, highly oriented films on non-lattice matched substrates, heterostructures with atomically sharp interfaces of junctions and other novel devices, and the processing of these films with negligible deterioration of the superconducting properties. These issues are illustrated with results based on films prepared in-situ by a pulsed laser deposition process. Films with zero-transition temperatures of 90 K and critical current densities of 5 x 10(exp 6) A/sq cm at 77 K have been prepared by this technique. Ultra-thin films, less than 100 A show T(sub c) is greater than 80 K, supporting the idea of two-dimensional transport in these materials. By the use of appropriate buffer layers, films with T(sub c) of 87 K and J(sub c) of 6 x 10(exp 4) A/sq cm were fabricated on silicon substrates. Submicron structures with J(sub c) is greater than 2 x 10(exp 7) at 10 K were fabricated. Results on nonlinear switching elements, IR detectors, and microwave studies will be briefly summarized.

Venkatesan, T.↗
NASA NTRS1991

Perspectives on high temperature superconducting electronics

The major challenges in making high temperature superconducting (HTSC) electronics viable are predominantly materials problems. Unlike their predecessors, the metal oxide-based superconductors are integratable with other advanced technologies such as opto-electronics and micro-electronics. The materials problems to be addressed relate to the epitaxial growth of high quality films, highly oriented films on non-lattice matched substrates, heterostructures with atomically sharp interfaces of junctions and other novel devices, and the processing of these films with negligible deterioration of the superconducting properties. These issues are illustrated with results based on films prepared in-situ by a pulsed laser deposition process. Films with zero-transition temperatures of 90 K and critical current densities of 5 x 10(exp 6) A/sq cm at 77 K have been prepared by this technique. Ultra-thin films, less than 100 A show T(sub c) is greater than 80 K, supporting the idea of two-dimensional transport in these materials. By the use of appropriate buffer layers, films with T(sub c) of 87 K and J(sub c) of 6 x 10(exp 4) A/sq cm were fabricated on silicon substrates. Submicron structures with J(sub c) is greater than 2 x 10(exp 7) at 10 K were fabricated. Results on nonlinear switching elements, IR detectors, and microwave studies will be briefly summarized.

Venkatesan, T.↗
NASA NTRS1993

Power management and distribution technology

Power management and distribution (PMAD) technology is discussed in the context of developing working systems for a piloted Mars nuclear electric propulsion (NEP) vehicle. The discussion is presented in vugraph form. The following topics are covered: applications and systems definitions; high performance components; the Civilian Space Technology Initiative (CSTI) high capacity power program; fiber optic sensors for power diagnostics; high temperature power electronics; 200 C baseplate electronics; high temperature component characterization; a high temperature coaxial transformer; and a silicon carbide mosfet.

Dickman, John Ellis↗
NASA NTRS1987

Properties of low-energy electron precipitation in the cleft during periods of unusually high ambient electron temperatures

A recently developed automated fitting procedure for Dynamics Explorer 2 electron energy spectra represents each auroral electron spectrum as a superposition of several Maxwellian and several Gaussian components. The fitting parameters give a digital representation which uniquely describes each spectrum. It is shown that unusually high ambient electron temperatures (of the order of 10,000 K) in the cleft are strongly correlated with the intensity parameters of the lowest-temperature Maxwellian components of the precipitation. The collisional heat input into the ambient electrons by these Maxwellian components of the precipitation fluxes is shown to be more than an order of magnitude higher in the high-temperature storm time cases than it is in a control set of 'normal temperature' quiet time cases. The heating effect of the solar flux is shown to be nearly the same for both sets of cases. As a result it is concluded that electron precipitation is the chief mechanism responsible for those high ambient temperatures.

Fontheim, Ernest G.↗
NASA NTRS2023

SMD Technology Highlights

Three technology highlights from the Science Mission Directorate (SMD) Astrophysics Division, Biological and Physical Sciences Division, and Planetary Science Division are featured: a) A new class of X-ray detector with unprecedented energy resolution and array size could help transform our understanding of the cosmos through unparalleled vision into the otherwise invisible universe. b) An autonomous microfluidic culturing system with CubeSat heritage is teaming up with two state-of-the-art radiation detectors to measure how biology responds to the radiation and reduced gravity environment on the lunar surface. c) Several core technologies developed via the Hot Operating Temperature Technology (HOTTech) Program were recently tested in the Glenn Extreme Environment Rig (GEER), which simulates the conditions on the surface of Venus.

yeast↗
DOE OSTI2026

Electron Correlation and High-Temperature Superconductivity

Strong electron correlation plays a central role in the high-temperature superconductivity (HTSC) of cuprates. However, to date, research has focused only on its role in spin dynamics and related effects, even though it is becoming increasingly clear that spin alone may not be sufficient to create HTSC. Here, we discuss a possible role of electron correlation in the Bose–Einstein condensation (BEC) of Cooper pairs. Recently, we succeeded in observing dynamic electron correlation via inelastic X-ray scattering through results presented in real space. We discovered that electron correlations are strongly modified in the plasmon, proving that electron dynamics significantly affect electron correlation. Earlier, we found that in 4 He, the atom–atom distance in the BE condensate is 10% longer than that in the non-condensate. These results suggest the possibility that the reduction in electron-repulsion energy upon BEC is driving T c to high values. Thus, electron correlation itself could be the origin of the HTSC phenomenon.

Bose–Einstein condensation↗
NASA NTRS2000

Packaging Technology Developed for High-Temperature SiC Sensors and Electronics

A ceramic- and thick-film-materials-based prototype electronic package designed for silicon carbide (SiC) high-temperature sensors and electronics has been successfully tested at 500 C in an oxygen-containing air environment for 500 hours. This package was designed, fabricated, assembled, and electronically evaluated at the NASA Glenn Research Center at Lewis Field with an in-house-fabricated SiC semiconductor test chip. High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as space missions to the inner solar system or the emission control electronics and sensors in aeronautical engines. Single-crystal SiC has such excellent physical and chemical material properties that SiC-based semiconductor electronics can operate at temperatures over 600 C, which is significantly higher than the limit for Si-based semiconductor devices. SiC semiconductor chips were recently demonstrated to be operable at temperatures as high as 600 C, but only in the probe station environment because suitable packaging technology for sensors and electronics at temperatures of 500 C and beyond did not exist. Thus, packaging technology for SiC-based sensors and electronics is immediately needed for both application and commercialization of high-temperature SiC sensors and electronics. In response to this need, researchers at Glenn designed, fabricated, and assembled a prototype electronic package for high-temperature electronics, sensors, and microelectromechanical systems (MEMS) using aluminum nitride (AlN) substrate and gold (Au) thick-film materials. This prototype package successfully survived a soak test at 500 C in air for 500 hours. Packaging components tested included thick-film high-temperature metallization, internal wire bonds, external lead bonds, and a SiC diode chip die-attachment. Each test loop, which was composed of thick-film printed wire, wire bond, and lead bond was subjected to a 50-mA direct current for 250 hours at 500 C.

Chen, Liang-Yu↗
NASA NTRS2014

Mid-Latitude Ionospheric Disturbances Due to Geomagnetic Storms at ISS Altitudes

Spacecraft charging of the International Space Station (ISS) is dominated by interaction of the US high voltage solar arrays with the F2-region ionosphere plasma environment. ISS solar array charging is enhanced in a high electron density environment due to the increased thermal electron currents to the edges of the solar cells. High electron temperature environments suppress charging due to formation of barrier potentials on the charged solar cell cover glass that restrict the charging currents to the cell edge [Mandell et al., 2003]. Environments responsible for strong solar array charging are therefore characterized by high electron densities and low electron temperatures. In support of the ISS space environmental effects engineering community, we are working to understand a number of features of solar array charging and to determine how well future charging behavior can be predicted from in-situ plasma density and temperature measurements. One aspect of this work is a need to characterize the magnitude of electron density and temperature variations that occur at ISS orbital altitudes (approximately 400 km) over time scales of days, the latitudes over which significant variations occur, and the time periods over which the disturbances persist once they start. This presentation provides examples of mid-latitude electron density and temperature disturbances at altitudes relevant to ISS using data sets and tools developed for our ISS plasma environment study. "Mid-latitude" is defined as the extra-tropical region between approx. 30 degrees to approx. 60 degrees magnetic latitude sampled by ISS over its 51.6 degree inclination orbit. We focus on geomagnetic storm periods because storms are well known drivers for disturbances in the ionospheric plasma environment.

Minow, Joseph I.↗
NASA NTRS2009

Distributed Control Architecture for Gas Turbine Engine

The transformation of engine control systems from centralized to distributed architecture is both necessary and enabling for future aeropropulsion applications. The continued growth of adaptive control applications and the trend to smaller, light weight cores is a counter influence on the weight and volume of control system hardware. A distributed engine control system using high temperature electronics and open systems communications will reverse the growing trend of control system weight ratio to total engine weight and also be a major factor in decreasing overall cost of ownership for aeropropulsion systems. The implementation of distributed engine control is not without significant challenges. There are the needs for high temperature electronics, development of simple, robust communications, and power supply for the on-board electronics.

Dennis Culley↗