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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Quasi-Two-Dimensional Heterostructures (K M 1 – x Te)(LaTe 3 ) ( M = Mn and Zn) with Charge Density Waves

Layered heterostructure materials with two different functional building blocks can teach us about emergent physical properties and phenomena arising from interactions between the layers. Here, we report intergrowth compounds KLaM 1 - x Te 4 (M = Mn and Zn; $x \approx$ 0.35) featuring two chemically distinct alternating layers [LaTe 3 ] and [KM 1 - x Te]. Their crystal structures are incommensurate, determined by single X-ray diffraction for the Mn compound and a transmission electron microscope study for the Zn compound. KLaMn 1 – x Te 4 crystallizes in the orthorhombic superspace group Pmnm(01/2 gamma)s00 with lattice parameters a = 4.4815(3) Å, b = 21.6649(16) Å, and c = 4.5220(3) Å. It exhibits charge density wave order at room temperature with a modulation wave vector q = 1/2b* + 0.3478c* originating from electronic instability of Te-square nets in [LaTe 3 ] layers. The Mn analog exhibits a cluster spin glass behavior with spin freezing temperature $T_f \approx$ 5 K attributed to disordered Mn vacancies and competing magnetic interactions in the [Mn 1 - x Te] layers. The Zn analog also has charge density wave order at room temperature with a similar q-vector having the c* component similar to 0.346 confirmed by selected-area electron diffraction. Electron transfer from [KM 1 - x Te] to [LaTe 3 ] layers exists in KLaM 1 – x Te 4 , leading to an enhanced electronic specific heat coefficient. The resistivities of KLaM 1 - x Te 4 (M = Mn and Zn) exhibit metallic behavior at high temperatures and an upturn at low temperatures, suggesting partial localization of carriers in the [LaTe 3 ] layers with some degree of disorder associated with the M atom vacancies in the [M 1 - x Te] layers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

S-band acoustoelectric amplifier in an InGaAs-AlScN-SiC architecture

Here, we report on an acoustoelectric slab waveguide heterostructure for phonon amplification using a thin Al 0.58 Sc 0.42 N film grown directly on a 4H-SiC substrate with an ultra-thin In 0.53 Ga 0.47 As epitaxial film heterogeneously integrated onto the surface of the Al 0.58 Sc 0.42 N. The aluminum scandium nitride film grown directly on silicon carbide enables a thin (∼850 nm thick) piezoelectric film to be deposited on a thermally conductive bulk substrate (370 W/m K for 4H-SiC); the high thermal conductivity of the substrate, large mobility of the semiconductor (∼7000 cm 2 /V s), and low carrier concentration (∼5 × 10 15 cm −3 ) yield low self-heating. A Sezawa mode with optimal overlap between the peak of its evanescent electric field and the semiconductor charge carriers is supported. The high velocity of the heterostructure materials allows us to operate the Sezawa mode amplifier at 3.05 GHz, demonstrating a gain of 500 dB/cm (40 dB in 800 μm). Additionally, a terminal end-to-end radio frequency gain of 7.7 dB and a nonreciprocal transmission of 52.6 dB are achieved with a dissipated DC power of 2.3 mW. In conclusion, the power added efficiency and acoustic noise figure are also characterized.

Hackett, L.↗
NASA NTRS1988

Microwave response of an HEMT photoconductor

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Claspy, P. C.↗
NASA NTRS1988

High frequency GaAlAs modulator and photodetector for phased array antenna applications

A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.

Claspy, P. C.↗
NASA NTRS1988

Microwave response of an HEMT photoconductor

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlGa diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Claspy, P. C.↗
NASA NTRS1989

High frequency GaAlAs modulator and photodetector for phased array antenna applications

A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.

Claspy, P. C.↗
DOE OSTI2021

Heterostructures of Various Dimensional Materials—From Epitaxy to Device Applications

The instructor will discuss a new epitaxy lift-off technique, a so-called remote epitaxy that can produce freestanding semiconductor membranes. Discussion will include 1) Remote epitaxy mechanism 2) High yield peeling mechanism 3) Reusability of the substrates 4) Economic aspect of remote epitaxy and 5) Heterointegration of 3D materials with 2D materials for advanced heterostructuring.

Kim, Jeehwan↗
DOE OSTI2022

Core-Shell Heterostructures as Functional Materials for Solid Oxide Fuel Cell (SOFC) Electrodes

The principal objective of this project was to synthesize core-shell heterostructures for solid oxide fuel cell cathodes using a molten salt solvent. In doing so, the main goals were split into a) to elucidate and understand the influence of molten salt chemistries to expeditiously synthesize perovskite type oxides for solid oxide fuel cells, b) provide a chemical framework for future molten salt syntheses of energy relevant ceramic materials, c) demonstrate and investigate the required parameters for the optimal core-shell synthesis and yield of La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3 (LSCF) – La 0.8 Sr 0.2 MnO 3 (shell), and d) demonstrate improved cathode performance of core-shell LSCF-LSM compared to an LSCF cathode on symmetric cells. The results clearly show that a) the influence of the molten salt cation outweighs the anion in regards to product stoichiometry, b) molten salts should be tailored to balance cationic and anionic acidity for high product yield, c) high yield of core-shell nanoparticles can be achieved by optimal mass ratio between core to shell, dwell time in the salt, size ratio between core to shell, and mass ratio between overall powder to salt, and d) the core-shell LSCF-LSM cathodes have lower polarization resistances than LSCF at higher temperatures. More work is required to optimize core-shell cathode performance at lower temperatures. However, this work thus provided justification for using the molten salt synthesis for SOFC cathodes and provided insights into future material modifications for improved performance.

08 HYDROGEN↗
DOE OSTI2022

Atomic-Scale Insights into the Lateral and Vertical Epitaxial Growth in Two-Dimensional Pd 2 Se 3 –MoS 2 Heterostructures

Two-dimensional (2D) materials form heterostructures in both the lateral and vertical directions when two different materials are interfaced, but with totally different bonding mechanisms of covalent in-plane to van der Waal’s layered interactions. Understanding how the competition between lateral and vertical forces influences the epitaxial growth is important for future materials development of complex mixed layered heterostructures. In this study, we use atomic-resolution annular dark-field scanning transmission electron microscopy to study the detailed atomic arrangements at mixed 2D heterostructure interfaces composed of two semiconductors with distinctly different crystal symmetry and elemental composition, Pd 2 Se 3 :MoS 2 , in order to understand the role of different chemical bonds on the resultant epitaxy. Pd 2 Se 3 is grown off the step edge in bilayer MoS 2 , and the vertical and lateral epitaxial relationships of the Pd 2 Se 3 –MoS 2 heterostructures are investigated. We find that the similarity of geometry at the interface with one metal (Pd or Mo) atoms bonded with two chalcogens (S or Se) are the crucial factors to make the atomically stitched lateral junction of 2D heterostructures. In addition, the vertical van der Waal interactions that are normally dominant in layered materials can be overcome by in-plane forces if the interfacial atomic stitching is high in quality and low in defect density. This knowledge should help guide the approaches for improving the epitaxy in mixed 2D heterostructures and seamless stitching of in-plane 2D heterostructures with various complex monolayer structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Van der Waals heterostructures

The integration of dissimilar materials into heterostructures has become a powerful tool for engineering interfaces and electronic structure. The advent of two-dimensional (2D) materials brought unprecedented opportunities for novel heterostructures in the form of van der Waals stacks, laterally stitched 2D layers, and more complex layered and 3D architectures. This Primer provides an overview of state-of-the-art methodologies for producing such van der Waals heterostructures, focusing on the two fundamentally different strategies, top-down deterministic assembly and bottom-up synthesis. For both approaches, successful techniques, advantages, and limitations are discussed. As important as the fabrication itself is the characterization of the resulting engineered materials, for which a range of analysis techniques covering structure, composition, and emerging functionality are highlighted. Examples of the properties of artificial van der Waals structures include optoelectronics and plasmonics, twistronics, and unique functionality arising from the generalization of van der Waals assembly from 2D- to 3D-crystalline components. Lastly, current issues of reproducibility, limitations, and opportunities for future breakthroughs in terms of enhanced homogeneity, interfacial purity, feature control, and ultimately orders of magnitude increased complexity of van der Waals heterostructures are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Charge density wave activated excitons in TiSe 2 –MoSe 2 heterostructures

Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for unexplored physics as dissimilar phenomena can be coupled via proximity effects. In this article, we identify an unexpected photoluminescence (PL) peak when MoSe 2 interacts with TiSe 2 . A series of temperature-dependent and spatially resolved PL measurements reveal that this peak is unique to the TiSe 2 –MoSe 2 interface, is higher in energy compared to the neutral exciton, and exhibits exciton-like characteristics. The feature disappears at the TiSe 2 charge density wave transition, suggesting that the density wave plays an important role in the formation of this new exciton. We present several plausible scenarios regarding the origin of this peak that individually capture some aspects of our observations but cannot fully explain this feature. These results therefore represent a fresh challenge for the theoretical community and provide a fascinating way to engineer excitons through interactions with charge density waves.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Atomic layer epitaxy of kagome magnet Fe 3 Sn 2 and Sn-modulated heterostructures

Magnetic materials with kagome crystal structure exhibit rich physics, such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here, we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe 3 Sn 2 . The structural and magnetic characterization of Fe 3 Sn 2 on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies on the local magnetic structure by anomalous Nernst effect imaging reveal in-plane oriented micrometer size domains. Superlattice structures consisting of Fe 3 Sn 2 and Fe 3 Sn are also synthesized by atomic layer molecular beam epitaxy, demonstrating the ability to modulate the sample structure at the atomic level. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe 3 Sn 2 with other materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Heterostructure engineering in electrode materials for sodium-ion batteries: Recent progress and perspectives

Sodium-ion batteries (SIBs) have stepped into the spotlight as a promising alternative to lithium-ion batteries for large-scale energy storage systems. However, SIB electrode materials, in general, have inferior performance than their lithium counterparts because Na + is larger and heavier than Li + . Heterostructure engineering is a promising strategy to overcome this intrinsic limitation and achieve practical SIBs. We provide a brief review of recent progress in heterostructure engineering of electrode materials and research on how the phase interface influences Na + storage and transport properties. Efficient strategies for the design and fabrication of heterostructures (in situ methods) are discussed, with a focus on the heterostructure formation mechanism. The heterostructure's influence on Na + storage and transport properties arises primarily from local distortions of the structure and chemomechanical coupling at the phase interface, which may accelerate ion/electron diffusion, create additional active sites, and bolster structural stability. Finally, we offer our perspectives on the existing challenges, knowledge gaps, and opportunities for the advancement of heterostructure engineering as a means to develop practical, high-performance sodium-ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2020

Toward non-Si electronics: From remote epitaxy to layer splitting of 2D materials for mixed dimensional heterostructures

The current electronics has been mainly dominated by Si-based devices due to their mature processing system and exceptional cost-effectiveness. However, next generation electronics needs novel functionalities that cannot be realized by Si because of intrinsic limitation of Si. Accordingly, demand for non-Si electronics has been getting substantially high. Unfortunately, current methodology requires extremely high cost for non-Si materials, which impedes the progress in developing the non-Si based electronics. Here, I will discuss about our group’s efforts to address this issue. Our team recently conceived a new crystalline growth, termed as “remote epitaxy”, which can copy/paste crystalline information from substrates remotely through graphene, thus generating single-crystalline films on graphene. As interfacial binding energy is attenuated by inserting graphene at interface, the single-crystalline films can be easily exfoliated from the slippery graphene surface. Also, the graphene-coated substrates can be, in principle, reused infinitely to produce single-crystalline films. Thus, the remote epitaxy can produce non-Si semiconductor films with unprecedented cost efficiency while allowing additional flexible device functionality required for current ubiquitous electronics. Next, I will discuss about a layer splitting technique which can be a potential solution to overcome the problem in obtaining large-scale and monolayer 2D materials. A 2D material-based heterostructure has been intensively studied because of its unique device functionalities and novel physics. However, it is extremely challenging to secure large-scale and monolayer 2D materials because of following issues: 1) poor scalability for laboratory fabrication processes of 2D heterostructures and 2) lack of well-defined control parameters for kinetics of 2D materials and predictable number of layers of 2D materials. To resolve this issue, we conceived a new approach called “layer-resolved splitting” which obtains multiple monolayer from multilayer 2D materials by controlling interfacial toughness contrast. As this method is versatile and universal, we can, in principle, apply to all 2D materials. We succeeded in having large-scale, monolayer 2D materials through our approach and, thereby 2D heterostructures were demonstrated for functional devices. Lastly, I would like to discuss opportunities of mixed-dimensional heterostructure demonstrated by remote epitaxy and layer-resolved splitting. As they produce freestanding 3D bulk films and 2D atomic layers, a new type of 3D/2D heterostructures can be realized where a new physics and new device architecture are revealed. Therefore, I believe that a new opportunity will be discovered through the mixed-dimensional heterostructures.

Bae, Sang-Hoon↗
DOE OSTI2021

Interfacial charge transfer and interaction in the MXene/TiO 2 heterostructures

Hybrid materials of MXenes [two-dimensional (2D) carbides and nitrides] and transition-metal oxides have shown great promise in electrical energy storage (EES) and 2D heterostructures have been proposed as the next-generation electrode materials to expand the limits of current technology. Here we use first principles density functional theory to investigate the interfacial structure, energetics, and electronic properties of the heterostructures of MXenes (Ti n+1 C n T 2 ; T = terminal groups) and anatase TiO 2 . We find that the greatest work-function differences are between OH-terminated MXene (1.6 eV) and anatase TiO 2 (101) (6.4 eV), resulting in the largest interfacial electron transfer (~0.9e/nm 2 across the interface) from MXene to the TiO 2 layer. This interface also has the strongest adhesion and is further strengthened by hydrogen bond formation. For O–, F–, or mixed O–/F– terminated Ti n+1 C n MXenes, electron transfer is minimal and interfacial adhesion is weak for their heterostructures with TiO 2 . The strong dependence of the interfacial properties of the MXene/TiO 2 heterostructures on the surface chemistry of the MXenes will be useful to tune the heterostructures for EES applications.

2-dimensinal systems↗
DOE OSTI2025

Strategies to search for two-dimensional materials with long spin qubit coherence time

Two-dimensional (2D) materials that can host qubits with long spin coherence time (T 2 ) have the distinct advantage of integrating easily with existing microelectronic and photonic platforms, making them attractive for designing novel quantum devices with enhanced performance. However, the relative lack of 2D materials as spin qubit hosts, as well as appropriate substrates that can help maintain long T 2 , necessitates a strategy to search for candidates with robust spin coherence. Here, we develop a high-throughput computational workflow to predict the nuclear spin bath-driven qubit decoherence and T 2 in 2D materials and heterostructures. We initially screen 1172 2D materials and find 189 monolayers with T 2 > 1 ms, higher than that of naturally-abundant diamond. We then construct 1554 lattice-commensurate heterostructures between high-T 2 2D materials and select 3D substrates, and we find that T 2 is generally lower in a heterostructure than in the bare 2D host material; however, low-noise substrates (such as CeO 2 and CaO) can help maintain high T 2 . To further accelerate the material screening effort, we derive analytical models that enable rapid predictions of T 2 for 2D materials and heterostructures. The models offer a simple, yet quantitative, way to determine the relative contributions to decoherence from the nuclear spin baths of the 2D host and substrate in a heterostructural system. By developing a high-throughput workflow and analytical models, we expand the genome of 2D materials and their spin coherence times for the development of spin qubit platforms.

Toriyama, Michael Y. [Argonne National Laboratory ↗