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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

The nucleation and growth of plasma-enhanced chemical-vapor deposited polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) the cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the film's cross section and interface, however, were not highly affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by a small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscopy spectra indicate that some silicon carbide is present in the precursor layer.

George, M. A.↗
NASA NTRS1995

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

The nucleation and growth of plasma enhanced chemical vapor deposited (PECVD) polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for: (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the films cross-section and interface however were not affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscoy (XPS) spectra indicates that some silicon carbide is present in the precursor layer.

George, M. A.↗
NASA NTRS1998

Application of Rotating Magnetic Fields to THM Growth Process: Te-CdTe

The numerical simulation of ongoing traveling heater method (THM) solution growth experiments of CdTe from Te solvent and the influence of a Rotating Magnetic Field (RMF) on control of convection in the solution zone is presented. The application of RMF is pursued as a means to actively control thermo-solutal convection in the solution zone which otherwise would be dominated by buoyancy forces. Numerical simulation and scaling analysis are used to generate a flow-regime map demarcating the boundary separating the buoyancy- and RMF-driven convection in the solution zone. Results indicate that whereas at low gravity levels the application of RMF can completely overwhelm buoyancy-induced convection, at normal gravity levels the successful control of convection by RMF requires use of fairly thin solvent zones. Simulation results also indicate that field strengths required to dominate natural convection on earth may lead to instabilities and transition to turbulence, and an associated deleterious effect on the quality of grown crystals. These and other simulations results are discussed in reference to experimental evidence.

LeClair, Mark↗
NASA NTRS1981

Development of advanced Czochralski growth process to produce low-cost 150 kG silicon ingots from a single crucible for technology readiness

The modified CG2000 crystal grower construction, installation, and machine check out was completed. The process development check out proceeded with several dry runs and one growth run. Several machine calibrations and functional problems were discovered and corrected. Exhaust gas analysis system alternatives were evaluated and an integrated system approved and ordered. Several growth runs on a development CG2000 RC grower show that complete neck, crown, and body automated growth can be achieved with only one operator input.

Source record↗
NASA NTRS1987

Growth process of gamma'-particles in a liquid-quenched Ni-15 at percent Al alloy

The growth of gamma-prime particles in a supersaturated Ni-15 at% Al alloy prepared by the liquid-quench method was studied using a magnetic mass balance, transmission electron microscopy, and field ion microscopy. Three stages in the precipitation and growth of these particles are demonstrated. In the first phase, the gamma-prime phase was produced by nucleation of spinodal decomposition of the alloy. In the second stage, spherical gamma-prime particles were arranged at random in the matrix with the size independent of aging time. Then, the Al concentration in the matrix decreased with the -1/3 power of the aging time. These results suggest that the degree of ordering increases with aging time. In the third stage, the particles were coarsened with aging time. They were arranged in the matrix (100) zone and were cubic, with the cube face lying on (100). The interfacial free energy was 28.4 mJ/sq m at 873 K and 22.4 mJ/sq m at 973 K.

Tachikake, A.↗
NASA NTRS1981

Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

Six growth runs used the Kayex-Hameo Automatic Games Logic (AGILE) computer based system for growth from larger melts in the Mod CG2000. The implementation of the melt pyrometer sensor allowed for dip temperature monitoring and usage by the operator/AGILE system. Use of AGILE during recharge operations was successfully evaluated. The tendency of crystals to lose cylindrical shape (spiraling) continued to be a problem. The hygrometer was added to the Furnace Gas Analysis System and used on several growth runs. The gas chromatograph, including the integrator, was also used for more accurate carbon monoxide concentration measurements. Efforts continued for completing the automation of the total Gas Analysis System. An economic analysis, based on revised achievable straight growth rate, is presented.

Lane, R. L.↗
NASA NTRS1990

Influence of residual gravity on crystal growth processes

The effects of steady and time-dependent residual accelerations on representative melt and solution crystal growth systems have been investigated using numerical models. For the melt growth system, it was found that the lateral nonuniformity in crystal composition, depending on the particular operating conditions, can be very sensitive to the orientation of the steady component of the residual gravity vector down to 10 to the -6th g. Oscillatory residual accelerations (g-jitter) were found to lead to transients in the dopant distribution. For the solution growth, longtime simulations showed that at 10 to the -5th g, and the cooling rates used in Spacelab 3 experiments, diffusive transport dominates only in the beginning. Convective transport becomes increasingly significant after 3 to 5 hours, depending on the orientation of the crystal in the residual gravity field.

Rosenberger, F.↗
NASA NTRS1981

Development of Advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

The modified CG2000 crystal grower construction, installation, and machine check-out was completed. The process development check-out proceeded with several dry runs and one growth run. Several machine calibrations and functional problems were discovered and corrected. Several exhaust gas analysis system alternatives were evaluated and an integrated system approved and ordered. A contract presentation was made at the Project Integration Meeting at JPL, including cost-projections using contract projected throughput and machine parameters. Several growth runs on a development CG200 RC grower show that complete neck, crown, and body automated growth can be achieved with only one operator input. Work continued for melt level, melt temperature, and diameter sensor development.

Source record↗
DOE OSTI2020

Understanding KOtBu in atomic layer deposition – in situ mechanistic studies of the KNbO3 growth process

Functional coatings based on alkali metals have become increasingly attractive in the current shift towards sustainable technologies. While lithium-based compounds have a natural impact on batteries, other alkali metal compounds are important as replacements for toxic materials in a range of electronic devices. This is especially true for potassium, being a major component in e.g. K x Na 1-x NbO 3 (KNN) and KTa x Nb 1-x O 3 (KTN), with hope to replace Pb(Zr x Ti 1-x )O 3 (PZT) in piezo-/ferroelectric and electrooptic devices. ALD facilitates functional conformal coatings at deposition temperatures far below what is reported using other techniques and with excellent compositional control. The ALD growth of potassium-containing films using KO t Bu has, however, been unpredictable. Untraditional response to the pulse composition and precursor dose, severe reproducibility issues, and very high growth per cycle are some of the puzzling features of these processes. In this article, we shed light on the growth behavior of KO t Bu in ALD by in situ quartz crystal microbalance and Fourier transform infrared spectroscopy studies. We study the precursor's behavior in the technologically interesting KNbO 3 -process, showing how the potassium precursor strongly affects the growth of other cation precursors. We show that the strong hygroscopic nature of the intermediary potassium species has far-reaching implications throughout the growth. This helps not only to enhance the understanding of alkali metal containing compounds’ growth in ALD, but also to provide the means to control the growth of novel sustainable technological materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1982

Continuous Czochralski growth. Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

The improvement of growth rates using radiation shielding and investigation of the crucible melt interaction for improved yields were emphasized. Growth runs were performed from both 15 and 16 inch diameter crucibles, producing 30 and 37 kg ingots respectively. Efforts to increase the growth rate of 150 mm diameter ingots were limited by temperature instabilities believed to be caused by undesirable thermal convections in the larger melts. The radiation shield improved the growth rate somewhat, but the thermal instability was still evident, leading to nonround ingots and loss of dislocation-free structure. A 38 kg crystal was grown to demonstrate the feasibility of producing 150 kg with four growth cycles. After the grower construction phase, the Hamco microprocessor control system was interfaced to the growth facility, including the sensor for automatic control of seeding temperature, and the sensor for automatic shouldering. Efforts focused upon optimization of the seeding, necking, and shoulder growth automation programs.

Source record↗
NASA NTRS1988

Application of Hoffman modulation contrast microscopy coupled with three-wavelength two-beam interferometry to the in situ direct observation of the growth process of a crystal in microgravity

Direct visualization of three dimensional transfer process of both heat and mass around a growing crystal and mono-molecular growth layers on the surface is possible in situ by means of high resolution Hoffman modulation contrast microscopy coupled with three wavelength two beam Mach-Zehnder interferometry. This in situ observation is very suitable for the verification of the growth mechanism of a crystal in a solution or a melt in microgravity.

Tsukamoto, Katsuo↗
NASA NTRS1978

Computer modeling of dendritic web growth processes and characterization of the material

High area throughput rate will be required for the economical production of silicon dendritic web for solar cells. Web width depends largely on the temperature distribution on the melt surface while growth speed is controlled by the dissipation of the latent heat of fusion. Thermal models were developed to investigate each of these aspects, and were used to engineer the design of laboratory equipment capable of producing crystals over 4 cm wide; growth speeds up to 10 cm/min were achieved. The web crystals were characterized by resistivity, lifetime and etch pit density data as well as by detailed solar cell I-V data. Solar cells ranged in efficiency from about 10 to 14.5% (AM-1) depending on growth conditions. Cells with lower efficiency displayed lowered bulk lifetime believed to be due to surface contamination.

Seidensticker, R. G.↗
NASA NTRS1978

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2. LSSA project

The results of emission spectroscopic analysis indicate that molten silicon can remain in contact with hot-pressed Si3N4 (99.2 percent theoretical density) for prolonged periods without attaining the impurity content level of the nitride. Although MgO was used as binder, Mg was not found present in the silicon sessile drop in quantities much above the level initially present in the silicon source material. Preliminary experiments with EFG-type dies coated with CVD Si3N4 or CVD SiOxNy indicate that capillary rise does not occur readily in these dies. The same was found to be true of hot-pressed and reaction-sintered Si3N4 obtained commercially. However, when dies were formed by depositing CVD layers on shaped silicon slabs, a column of molten silicon was maintained in each CVD die while being heated in contact with a crucible of molten silicon. Preliminary wetting of dies appears necessary for EFG growth. Several ribbon growth experiments were performed from V-shaped dies.

Duffy, M. T.↗
NASA NTRS1977

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2, LSSA project

Silicon sessile drop experiments were performed on a variety of commercially available refractory carbides, nitrides, oxides, and borides to examine the potential of these materials for applications involving either direct contact with molten silicon or as substrates for CVD coatings in the fabrication of dies and crucibles for containing molten silicon. Simultaneous experiments were also conducted with CVD layers of SiC, Si3N4, and SiOxNy. Silicon nitride layers, deposited with NH3:SiH4 ratios ranging from 100:1 down to 5:1, were examined in sessile drop experiments to determine if the layers are degraded as a result of using lower reagent ratios. Preliminary experiments were undertaken on the stability of CVD Si3N4 near the melting point of silicon. Silicon ribbon segments were grown from vitreous carbon dies which had been coated with CVD Si3N4. Depending upon the purity of the die materials, ribbon resistivity values up to 40 Omega cm were obtained.

Duffy, M. T.↗