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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Theoretical analysis of oxygen diffusion at startup in an alkali metal heat pipe with gettered alloy walls

The diffusion of oxygen into, or out of, a gettered alloy exposed to oxygenated alkali liquid metal coolant, a situation arising in some high temperature heat transfer systems, was analyzed. The relation between the diffusion process and the thermochemistry of oxygen in the alloy and in the alkali metal was developed by making several simplifying assumptions. The treatment is therefore theoretical in nature. However, a practical example pertaining to the startup of a heat pipe with walls of T-111, a tantalum alloy, and lithium working fluid illustrates the use of the figures contained in the analysis.

Tower, L. K.↗
NASA NTRS2000

Assessment of Zr-Fe-V getter alloy for gas-gap heat switches

A commercial Zr-V-Fe alloy (i.e., SAES Getters trade name alloy St-172) has been assessed as reversible hydrogen storage material for use in actuators of gas gap heat switches. Two prototype actuators containing the SAES St-172 material were built and operated for several thousand cycles to evaluate performance of the metal hydride system under conditions simulating heat switch operation.

metal hydrides gas gap heat switches hydrogen stor↗
NASA NTRS2000

Getters for Reliable Hermetic Packages

A variety of sealed-off devices such as cathode ray tubes (CRT's) electron tubes, plasma displays, particle accelarators and colliders vacuum thermal insulation, ultra-high vacuum (UHV), extreme high vacuum (XHV) systems for semiconductor processing, X-ray tubes, lamps, field-emission displays (FEDs) flat panel displays (FPDs), some microelectromechanical systems (MEMS) and science instruments for space applications, nuclear systems require a vacuum for their successful operation.

getters hermetic packaging electronic↗
NASA NTRS1985

Activated Internal Gettering

Lifetimes of minority carriers in silicon webs improved by annealing. Heat treatment of silicon web ribbons considerably improves efficiency of solar cells.

Liu, J. K.↗
NASA NTRS2003

A Real Attention-Getter

While most parents would agree that playing videos games is the antithesis of time well spent for their children, recent advances involving NASA biofeedback technology are proving otherwise. The same techniques used to measure brain activity in NASA pilots during flight simulation exercises are now a part of a revolutionary video game system that is helping to improve overall mental awareness for Americans of all ages, including those who suffer from Attention Deficit Hyperactivity Disorder (ADHD).

Source record↗
NASA NTRS2003

Design and Test of Passively Operated Heat Switches for 0.2 to 15 K

Heat switches have many uses in cryogenics, from regulating heat flow between refrigeration stages to thermally isolating components once they have cooled to low temperature. Among the techniques one can use for thermal switching, the gas-gap technique has the advantages of wide operating temperature range, high switching ratio, and no moving parts. The traditional gas-gap switch uses copper conductors separated by a small gap and an external getter. The switch is activated by heating and cooling the getter by moving gas into and out of the gap, turning the switch on and off. We have designed, built and tested heat switches that use an internal getter to passively turn off at temperatures between 0.2 and 15 K. The getter is thermally anchored to one side of the switch, and when that side of the switch cools through a transition region, gas adsorbs onto the getter and the switch turns off. The challenges are to make the transition region very narrow and tailorable to a wide range of applications, and to achieve high gas conductance when the switch is on. We have made switches using He-3, He-4, hydrogen, and neon gas, and have used charcoal and various metal substrates as getters. Switching ratios range from 1000 to over 10,000. Design and performance of these switches will be discussed in detail.

DiPirro, M. J.↗
NASA NTRS1982

Silicon solar cell process development, fabrication and analysis

For UCP Si, randomly selected wafers and wafers cut from two specific ingots were studied. For the randomly selected wafers, a moderate gettering diffusion had little effect. Moreover, an efficiency up to 14% AMI was achieved with advanced processes. For the two specific UCP ingots, ingot #5848-13C displayed severe impurity effects as shown by lower 3sc in the middle of the ingot and low CFF in the top of the ingot. Also the middle portions of this ingot responded to a series of progressively more severe gettering diffusion. Unexplained was the fact that severely gettered samples of this ingot displayed a negative light biased effect on the minority carrier diffusion length while the nongettered or moderately gettered ones had the more conventional positive light biased effect on diffusion length. On the other hand, ingot C-4-21A did not have the problem of ingot 5848-13C and behaved like to the randomly selected wafers. The top half of the ingot was shown to be slightly superior to the bottom half, but moderate gettering helped to narrow the gap.

Iles, P. A.↗
NASA NTRS1982

New implantation techniques for improved solar cell junctions

Ion implantation techniques offering improved cell performance and reduced cost have been studied. These techniques include non-mass-analyzed phosphorus implantation, argon implantation gettering, and low temperature boron annealing. It is found that cells produced by non-mass-analyzed implantation perform as well as mass-analyzed controls, and that the cell performance is largely independent of process parameters. A study of argon implantation gettering shows no improvement over non-gettered controls. Results of low temperature boron annealing experiments are presented.

Spitzer, M. B.↗
NASA NTRS1985

Oxygen and carbon impurities and related defects in silicon

Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

Pearce, C. W.↗
NASA NTRS1985

Oxygen and carbon in silicon

The properties of the early transistors were determined by the minority-carrier lifetime, as is the silicon photovoltaic solar cell. Most of the devices on the modern integrated circuits are majority carrier devices, in part to avoid this lifetime dependence. The micro-electronics industry typically starts with wafers with a minority-carrier lifetime of 1000 micro-seconds, but during device fabrication this lifetime is reduced to beflow 1 micro-second, in spite of extraordinary cleanliness and precautions. Process-induced defects (PID) include point defects, defect complexes, line defects, and bulk precipitates. One of the aspects that needs to be better understood is the nature of minority carrier recombination at line defects and at precipitates. Some of the PIDs are known to be related to the fast-diffusers of the iron-series transition elements. One of the common techniques of dealing with these elements is intrinsic gettering by the oxygen precipitates. But even in the gettered state, there may be a residual effect on the lifetime. Oxygen is an almost ubiquitous impurity in silicon and plays an important role in both integrated circuits and solar cells. The isolated oxygen interstitial is electrically inactive, but in its various aggregated forms it has a variety of electrical activities. The agglomeration and precipitation of oxygen, including impurity gettering and the complicating role of carbon, is discussed.

Corbett, J. W.↗
NASA NTRS2004

Buffer Gas Experiments in Mercury (Hg+) Ion Clock

We describe the results of the frequency shifts measured from various buffer gases that might be used as a buffer gas to increase the loading efficiency and cooling of ions trapped in a small mercury ion clock. The small mass, volume and power requirement of space clock precludes the use of turbo pumps. Hence, a hermetically sealed vacuum system, incorporating a suitable getter material with a fixed amount of inert buffer gas may be a practical alternative to the groundbased system. The collision shifts of 40,507,347.996xx Hz clock transition for helium, neon and argon buffer gases were measured in the ambient earth magnetic field. In addition to the above non-getterable inert gases we also measured the frequency shifts due to getterable, molecular hydrogen and nitrogen gases which may be used as buffer gases when incorporated with a miniature ion pump. We also examined the frequency shift due to the low methane gas partial pressure in a fixed higher pressure neon buffer gas environment. Methane gas interacted with mercury ions in a peculiar way as to preserve the ion number but to relax the population difference in the two hyperfine clock states and thereby reducing the clock resonance signal. The same population relaxation was also observed for other molecular buffer gases (N H ,) but at much reduced rate.

mercury ion clock↗
NASA NTRS2011

Heat Switches Providing Low-Activation Power and Quick-Switching Time for Use in Adiabatic Demagnetization Refrigerators

An adiabatic demagnetization refrigerator (ADR) is a solid-state cooler capable of achieving sub-Kelvin temperatures. It neither requires moving parts nor a density gradient in a working fluid making it ideal for use in space-based instruments. The flow of energy through the cooler is controlled by heat switches that allow heat transfer when on and isolate portions of the cooler when off. One type of switch uses helium gas as the switching medium. In the off state the gas is adsorbed in a getter thus breaking the thermal path through the switch. To activate the switch, the getter is heated to release helium into the switch body allowing it to complete the thermal path. A getter that has a small heat capacity and low thermal conductance to the body of the switch requires low-activation power. The cooler benefits from this in two ways: shorter recycle times and higher efficiency. We describe such a design here.

Kimball, Mark O.↗
NASA NTRS2011

Heat Switches Providing Low-Activation Power and Quick-Switching Time for Use in Cryogenic Multi-Stage Refrigerators

An adiabatic demagnetization refrigerator (ADR) is a solid-state cooler capable of achieving sub-Kelvin temperatures. It neither requires moving parts nor a density gradient in a working fluid making it ideal for use in space-based instruments. The flow of energy through the cooler is controlled by heat switches that allow heat transfer when on and isolate portions of the cooler when off. One type of switch uses helium gas as the switching medium. In the off state the gas is adsorbed in a getter thus breaking the thermal path through the switch. To activate the switch, the getter is heated to release helium into the switch body allowing it to complete the thermal path. A getter that has a small heat capacity and low thermal conductance to the body of the switch requires low-activation power. The cooler benefits from this in two ways: shorter recycle times and higher efficiency. We describe such a design here.

Kimball, Mark O.↗
NASA NTRS2018

Active Gas-Gap Heat Switch with Fast Thermal Response

An active gas-gap heat switch may significantly reduce the time required to transition between the open and closed states, reduce the heat require to warm the getter, and reduce the heat that leaks from the getter to the switch body. A thermal interface at one end of the active gas-gap heat switch may include a plurality of fins. A getter assembly may be hermetically attached to the thermal interface and a containment tube may surround and house the plurality of fins.

Shirron, Peter J.↗
NASA NTRS1966

Auxiliary titanium sublimation pump produces ultrahigh /10 to the minus 11 torr/ vacuum

Sublimated titanium as a gettering agent in conjunction with a turbine-type pump provides a two-step procedure for obtaining an ultrahigh vacuum of 10 to the minus 11 torr. The pump alone evacuates the chamber to a pressure of 10 to the minus 9 torr. The residual gas is removed by the gettering agent at a pumping speed of 15 liters per second per square inch.

Outlaw, R. A.↗
NASA NTRS1979

Paleointensity determinations at elevated temperatures - Sample preparation technique

A technique has been developed for the encapsulation of rock samples in order to prevent the chemical alterations which commonly accompany paleointensity measurements at elevated temperatures. The technique involves vacuum pumping at about 100 C of the sample as placed in a silica tube. The tube containing the sample and a Ti 'getter' are sealed under vacuum. Measurements can be made at 200 and 300 C. Immediately after this, the sample is sealed-off from the getter. The sample is now ready for measurements at higher temperatures.

Taylor, L. A.↗