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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Broad-range tuning of ferroelectric switching of La x Bi 1−x FeO 3 epitaxial films via digital doping using off-axis co-sputtering

To investigate the scope of ferroelectric behavior in La-substituted BiFeO 3 films, La x Bi 1−x FeO 3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO 3 (001) and DyScO 3 (110) substrates with a SrRuO 3 bottom electrode layer. A digital-doping deposition method was used to enable precise control and continuous tuning of La concentration in high-quality LaxBi 1−x FeO 3 films across a wide range of x = 0.05–0.60, which was systematically investigated using piezoresponse force microscopy. Robust and reversible out-of-plane ferroelectric switching has been observed up to x = 0.35, while films with x ≥ 0.37 exhibit no measurable ferroelectric behavior, indicating a sharp ferroelectric-to-paraelectric phase transition between x = 0.35 and 0.37. This represents the highest reported La concentration in LaxBi 1−x FeO 3 films that retains ferroelectric ordering, highlighting opportunities to engineer ferroelectric and multiferroic properties in complex oxide heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Dynamics of Thermally Driven Domain Transformation in Ferroelectric Thin Films

An important feature in ultrathin ferroelectric films is the spontaneous formation of nanoscale polarization domain patterns. Epitaxial strain can greatly increase the ferroelectric transition temperature such that films can be in the ferroelectric state during growth. On the other hand, depolarization fields compete with ferroelectricity in ultrathin films, and, consequently, the optimal domain configuration during growth is a moving target. Under these conditions it is readily possible for a grown film to be in a nonequilibrium domain configuration. As the energy landscape in the system is quite complex, the relaxation dynamics by which a system can evolve towards the true equilibrium configuration are also quite interesting. Here, to capture the details of this process we used Bragg-geometry x-ray photon correlation spectroscopy (XPCS), in which x-ray scattering speckle patterns contain the information from the domain arrangements inside the film. With modest heating (∼15⁢0 °C) domain relaxation from 𝑇 (tetragonal) to 𝑀 𝐶 (monoclinic) was observed in BaTiO 3 films grown on ultrathin ferroelectric PbTiO 3 layers. Two-time correlation analysis reveals fascinating details associated with sticking points and reversals in the process.

36 MATERIALS SCIENCE↗
DOE OSTI2025

The influence of cooling rates on strain phase diagrams and domain structures of ferroelectric thin films: A case study of PbTiO 3

Strain engineering has been established as an effective approach to control phase equilibria, domain configurations, and functional properties of ferroelectric thin films. Temperature-strain phase diagrams have been used as powerful tools for providing insights into strain engineering. However, almost all existing phase diagrams established using the phase-field approach assume quenching conditions without considering actual cooling rates during the post-deposition annealing process of ferroelectric thin films. Within this work, we systematically investigate the influence of cooling rates on domain structures and the strain-phase diagram of ferroelectric thin films using phase-field simulations, taking PbTiO 3 thin films as a model system. We found that both the position of phase boundaries in the strain phase diagrams and the domain morphology are significantly influenced by the cooling rates. It is revealed that while the paraelectric-ferroelectric phase boundary remains invariant, the phase boundaries between single-phase and multi-phase regions tend to shift toward the corresponding multi-phase region as the cool rate reduces. Slow cooling generally leads to more ordered domain structures with increased domain size. Using the obtained equilibrium domain structures, we calculated effective thermal conductivities and found significant variations that can be tuned by the cooling rates. In conclusion, this work reveals an underexplored yet critical impact of cooling rates on phase equilibria and domain structures in ferroelectric thin films, which may inspire further fine-tuning of domains and domain walls in low-dimensional ferroelectrics for multifunctional applications.

Domain structures↗
DOE OSTI2025

Flux-Closure Domain Structures in Ferroelectric K 0.5 Na 0.5 NbO 3 Thin Films

Topological domain structures in ferroelectric materials have garnered increasing attention due to their intriguing physical properties and promising applications. While most existing topological structures in ferroelectric perovskite oxides originate from tetragonal or rhombohedral bulk phases, much less is understood about their counterparts in orthorhombic ferroelectrics. Here, in this work, we employ ferroelectric K 0.5 Na 0.5 NbO 3 (KNN) thin films as a model system and leverage phase-field simulations to theoretically predict the static structures and dynamic behaviors of three types of flux-closure domain configurations: in-plane (Type-I), out-of-plane (Type-II), and superdomain (Type-III) flux-closure structures. We systematically investigate the effects of finite size, misfit strains, and electrical boundary conditions on the formation and switching of these topological structures. For the Type-I structure, size reduction or small misfit strain facilitates a transition of the flux-closure pattern to polar vortices. Type-II structures emerge under open-circuit electrical boundary conditions of the film, forming at the junctions of specific domain walls with the film surface or the film–substrate interface. The formation mechanisms of these two flux-closure structures are rationalized from an energy perspective. We demonstrated switching capabilities of Type-II and Type-III structures by obtaining polarization–electric field hysteresis loops. Our simulations also reveal a reversible electric-field-induced transition between the orthorhombic and rhombohedral ferroelectric phases with a checkerboard domain pattern, during which the integrity of the flux-closure structure is preserved. These findings provide theoretical insights and practical guidance for identifying and manipulating topological structures in low-symmetry ferroelectrics, paving the way for developing energy-efficient microelectronic devices based on topological structures.

P-E loop↗
DOE OSTI2026

Persistent structural distortion for anticipated improper ferroelectricity in ultrathin h-Lu 1− x Ca x MnO 3 films

Improper ferroelectricity in hexagonal rare-earth manganites (h-RMnO 3 , R = Ho–Lu, Y, Sc) arises from a geometric distortion as the primary order parameter, resilient to depolarizing fields and promising for ultrathin ferroelectric devices. However, the substrate-induced interface clamping effect, which suppresses the geometric distortion in the sub-nanometer regime, has thus far hindered the realization of two-dimensional improper ferroelectrics. This study demonstrates that doping with calcium can enhance ferroelectric structural distortion in h-LuMnO 3 thin films. Compressively strained h-Lu 1−x Ca x MnO 3 (x = 0.1, 0.2, 0.3, 0.4, 0.5) epitaxial thin films were stabilized on sapphire substrates using an h-ScFeO 3 buffer layer. We have found that the interface clamping effect is entirely overcome when the doping concentration reaches x ⩾ 0.2, establishing a potential quasi-2D ferroelectric system with a remarkably high estimated structural transition temperature of larger than 1200 K inferred indirectly from temperature-resolved reflection high-energy electron diffraction. This finding suggests a general strain engineering strategy to enhance improper ferroelectricity in hexagonal manganites.

hexagonal manganites↗
DOE OSTI2025

First-principles effective Hamiltonian for finite-temperature modeling of nonperovskite ferroelectrics

First-principles-based effective Hamiltonian techniques have been widely employed for over three decades to investigate ferroelectricity and related phenomena in perovskite materials. These techniques offer high accuracy, transferability, compatibility with various finite-temperature algorithms, computational efficiency, and ease in incorporating interactions with external fields. They have been adapted to study diverse phenomena, ranging from topological dipole patterns in ferroelectric nanostructures to multicaloric effects. In this work, we develop an effective Hamiltonian for the nonperovskite ferroelectric HfO 2 (hafnia). Applying this methodology to explore the finite-temperature and finite-electric-field properties of ferroelectric hafnia revealed (1) exceptionally large intrinsic coercive fields, an order of magnitude higher than those observed in perovskite ferroelectrics; (2) their atomistic origin; and (3) the existence of a regime where the relationship between the coercive field and the energy barrier for polarization reversal is counterintuitive. Here, these developments could accelerate progress both in methodological advancements for simulating ferroics and in the atomistic understanding of a broad range of ferroelectrics.

Electric polarization↗
DOE OSTI2025

Reversible long-range domain wall motion in an improper ferroelectric

Reversible ferroelectric domain wall movements beyond the 10 nm range associated with Rayleigh behavior are usually restricted to specific defect-engineered systems. Here, we demonstrate that such long-range movements naturally occur in the improper ferroelectric ErMnO 3 during electric-field-cycling. We study the electric-field-driven motion of domain walls, showing that they readily return to their initial position after having traveled distances exceeding 250 nm. By applying switching spectroscopy band-excitation piezoresponse force microscopy, we track the domain wall movement with nanometric spatial precision and analyze the local switching behavior. Phase field simulations show that the reversible long-range motion is intrinsic to the hexagonal manganites, linking it to their improper ferroelectricity and topologically protected structural vortex lines, which serve as anchor point for the ferroelectric domain walls. Our results give new insight into the local dynamics of domain walls in improper ferroelectrics and demonstrate the possibility to reversibly displace domain walls over much larger distances than commonly expected for ferroelectric systems in their pristine state, ensuring predictable device behavior for applications such as tunable capacitors or sensors.

Zahn, Manuel [Norwegian Univ. of Science and Techn↗
DOE OSTI2025

Physics of wurtzite ferroelectrics

Ferroelectricity was long considered incompatible with the wurtzite structure, but the recent discovery of switchable polarization in wurtzite alloys has renewed interest in these materials for integrated electronic and memory applications. The development of wurtzite ferroelectrics faces significant technological challenges, which can be addressed through a fundamental physical understanding of their dielectric and ferroelectric properties. This article focuses on the physics that govern the polarization switching behavior, emphasizing the atomic- and meso-scale (domain) mechanisms involved in the transition between polarization states. A distinguishing feature of this article is a deep dive into the role of intrinsic and extrinsic defects—an area that has received limited attention in prior reviews, but is increasingly recognized as central to polarization switching, coercive fields, leakage, and fatigue. We highlight how defect behavior evolves during processing and electrical cycling, often contributing to long-term degradation. We also introduce powerful first-principles defect calculations, common in semiconductors but not yet widespread in ferroelectrics, as tools to understand and design materials. By integrating recent theoretical and experimental insights, we aim to provide a framework for advancing wurtzite ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures

A special class of valleytronic two-dimensional (2D) semiconductors possesses carrier pockets (i.e., valleys) along certain directions in the first Brillouin zone, which can be applied as a new degree of freedom for information storage and processing. Here we show that members of this family that are ferroelectric allow the location of these valleys to be switched by rotating the ferroelectric polarization. This makes possible the control of electronic state transmission probability through an energy barrier by ferroelectrically switching the polarization direction, thereby creating or eliminating valley matching in reciprocal space. We apply molecular beam epitaxy to grow lateral sandwich heterostructures with monolayer-thick ferroelectric SnTe separated by nanometer-wide paraelectric PbTe as the barriers. Using scanning tunneling microscopy, we show that the transmission probability of the 2D hole states at the valence band maximum of SnTe monolayer strongly relies on the relative orientation between the polarization directions of the two SnTe electrodes. The transmission can be switched from a suppressed state to a permitted state by rotating the ferroelectric polarization of one SnTe electrode by 90 degrees. Our work demonstrates the electric-field-control of valley locations and its potential for tunnel junction valleytronic devices.

electronic devices↗
DOE OSTI2025

Ferroelectric epitaxial Al(Sc/B)N/Mo/SiC heterostructures for high operating temperature devices

Advances in wurtzite nitride ferroelectrics of Al 1-x M x N (⁠ M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating > 200°C, a movement toward SiC-based platforms enables better performance over conventional Si, primarily due to the higher bandgap and lower intrinsic carrier concentration of SiC. Hence, the challenge is to develop a deposition process to integrate Al 1-x M x M x N ferroelectrics with elevated temperature-compatible materials for high temperature electronics such as the non-volatile memory component. We demonstrate epitaxial Al M N/Mo/SiC heterostructures, which provides both the crystalline and surface features that promote high-quality ferroelectric nitride film growth. Omega scans of the Mo (110) reflection exhibit a full width at half max of < 0.02° (40 arc sec) and the (0002) peak of the subsequently grown nitride film had a value of 1.1° for 160 nm thick Al 0.7 Sc 0.3 N and 1.3° for 400 nm thick Al 0.94 B 0.06 N. The crystallographic relationships found between the Al M N, Mo, and SiC layers indicate an advancement in sputter deposition of epitaxial films. Ferroelectric switching is also shown at 400 °C in both samples via polarization-electric field hysteresis and pulsed measurements, which exhibited P r values >100 μC cm -2 and E c between 3 and 4 M V cm -1 ⁠, despite a large presence of oxygen in both Al M N films ranging between 4 and 5 at.%, revealed by compositional analysis. This study demonstrates the process for synthesizing high-crystal quality ferroelectric nitride films, which can be used in extremely high temperature applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

A new era of ferroelectric thin films for nonvolatile memories

Ferroelectric films have potential applications in nonvolatile memory devices. In addition to the well-established perovskite-structure oxide ferroelectrics, hafnia- and wurtzite-based ferroelectrics have recently attracted considerable attention because of the improved scalability of the ferroelectric response (down to nanometer thicknesses), their compatibility with silicon fabrication processes, and the availability of deposition methods that realize three-dimensional structures. Furthermore, due to their high compatibility with silicon processes, these are also expected to be used in emerging energy-efficient applications, such as neuromorphic computing and reservoir computing. In this article, we review the fundamentals of hafnia- and wurtzite-based ferroelectrics and their advantages and issues for developing in nonvolatile memory devices. Then, possible emerging applications are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Order–Disorder Phase Stabilization by Pressure‐Induced Charge Transfer Enhances the Ferroelectric Photovoltaic Effect in Multiferroic BaFe 4 O 7

Abstract Multiferroic ferroelectric photovoltaic (FPV) materials, combining magnetic and ferroelectric properties, are of paramount importance for optoelectronic and photovoltaic applications. However, optimizing both the remanent polarization and the optical bandgap—key factors for enhanced FPV performance—presents a significant challenge due to their trade‐off. This work shows that pressure‐induced charge transfer between different metal sites can break this trade‐off. Above ≈20 GPa, charge transfer between different trivalent iron (Fe) sites in the multiferroic material BaFe 4 O 7 leads to Fe valence disproportionation, FeO 4 tetrahedra disorder, and Jahn–Teller distortion of FeO 6 octahedra. These changes reduce the bandgap, lower resistivity, and enhance ferroelectric polarization, resulting in a 2.5‐fold increase in photocurrent. Upon decompression, BaFe 4 O 7 retains an order–disorder structure, optimal ferroelectric and optical properties at ambient conditions. This work provides a novel pathway to simultaneously optimizing ferroelectricity and bandgap via pressure‐induced charge transfer, overcoming the traditional trade‐off in FPV materials, and offers a promising approach for developing high polarization performance, narrow‐bandgap FPV materials.

Chemistry↗
DOE OSTI2025

Coupling of electronic transition to ferroelectric order in a 2D semiconductor

A ferroelectric material often exhibits a soft transverse optical (TO) phonon mode which governs its phase transition. Charge coupling to this ferroelectric soft mode may further mediate emergent physical properties, including superconductivity and defect tolerance in semiconductors. However, direct experimental evidence for such coupling is scarce. Here we show that a photogenerated coherent phonon couples strongly to the electronic transition above the bandgap in the van der Waals (vdW) two-dimensional (2D) ferroelectric semiconductor NbOI 2 . Using terahertz time-domain spectroscopy and first-principles calculations, we identify this mode as the TO phonon responsible for ferroelectric order. This exclusive coupling occurs only with the above-gap electronic transition and is absent in the valence band as revealed by resonant inelastic X-ray scattering. Our findings suggest a new role of the soft TO phonon mode in electronic and optical properties of ferroelectric semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Enhanced production of active species and NH 3 using non-equilibrium ferroelectric barrier discharge

Non-equilibrium plasma-assisted ammonia synthesis is investigated through enhanced active species production with ferroelectric discharge. Time-resolved in-situ diagnostics of femtosecond two-photon absorption laser-induced fluorescence, coherent anti-Stokes Raman scattering, and laser absorption spectroscopy, as well as optical emission spectroscopy, were conducted to probe the key intermediate species, such as H and N radicals as well as N 2 (ν), ions, and NH 3 to achieve better understanding of non-equilibrium energy transfer and ammonia formation. The results reveal that ferroelectric discharge improved ammonia yield by four times. Results also show that ferroelectrics not only enhanced ions (N 2 + ) production, radicals (N, H) number density, but also increased the N 2 vibrational temperature. Further plasma modeling identified the couplings between elevated radical and ion production and enhanced vibrational excitation reactions, e.g., N + H 2 (ν)→NH + H, N 2 (ν)+H → NNH, N 2 + + H 2 → H + N 2 H + , and N 2 H + +e→NH + N, facilitated by ferroelectric discharge. These findings provide critical insight into the mechanism of ferroelectric plasma catalysis and highlight their potential in advancing energy-efficient chemical synthesis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Polarization rotation in a ferroelectric BaTiO 3 film through low-energy He-implantation

Domain engineering in ferroelectric thin films is crucial for next-generation microelectronic and photonic technologies. Here, a method is demonstrated to precisely control domain configurations in BaTiO 3 thin films through low-energy He ion implantation. The approach transforms a mixed ferroelectric domain state with significant in-plane polarization into a uniform out-of-plane tetragonal phase by selectively modifying the strain state in the film’s top region. This structural transition significantly improves domain homogeneity and reduces polarization imprint, leading to symmetric ferroelectric switching characteristics. The demonstrated ability to manipulate ferroelectric domains post-growth enables tailored functional properties without compromising the coherently strained bottom interface. The method’s compatibility with semiconductor processing and ability to selectively modify specific regions make it particularly promising for practical implementation in integrated devices. This work establishes a versatile approach for strain-mediated domain engineering that could be extended to a wide range of ferroelectric systems, providing new opportunities for memory, sensing, and photonic applications where precise control of polarization states is essential.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Superconductivity from Domain Wall Fluctuations in Sliding Ferroelectrics

Bilayers of two-dimensional van der Waals materials that lack an inversion center can show a novel form of ferroelectricity, where certain stacking arrangements of the two layers lead to an interlayer polarization. Under an external out-of-plane electric field, a relative sliding between the two layers can occur, accompanied by an interlayer charge transfer and a ferroelectric switching. We show that the domain walls that mediate ferroelectric switching are a locus of strong attractive interactions between electrons. The attraction is mediated by the ferroelectric domain wall fluctuations, effectively driven by the soft interlayer shear phonon. We comment on the possible relevance of this attraction mechanism to the recent observation of an interplay between sliding ferroelectricity and superconductivity in bilayer T 𝑑 −MoTe 2 . We also discuss the possible role of this mechanism in the superconductivity of moiré bilayers.

Chaudhary, Gaurav [Univ. of Cambridge (United King↗
DOE OSTI2025

Fluorine-free strongly dipolar polymers exhibit tunable ferroelectricity

Current research on ferroelectric polymers centers predominantly on poly(vinylidene fluoride) (PVDF)–based fluoropolymers because of their superior performance. However, they are considered “forever chemicals” with environmental concerns. Here, we describe a family of rationally designed fluorine-free ferroelectric polymers, featuring a polyoxypropylene main chain and disulfonyl alkyl side chains with a C3 spacer: −SO 2 CH 2 CHRCH 2 SO 2 − (R = −H or −CH 3 ). Both experimental and simulation results demonstrate that strong dipole-dipole interactions between neighboring disulfonyl groups induce ferroelectric ordering in the condensed state, which can be tailored by changing the R group: ferroelectric for R = −H or relaxor ferroelectric for R = −CH 3 . At low electric fields, the relaxor polymer exhibits electroactuation and electrocaloric performance comparable with those of state-of-the-art PVDF-based tetrapolymers.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Mechanism-Resolved PFM of Ferroionic and Ferroelectric Responses in Thickness-Gradient Hf 0.5 Zr 0.5 O 2 Libraries

Resolving growth mechanisms and thickness evolution of functional properties is one of the key tasks in materials discovery and optimization involving thin-film materials, traditionally requiring significant experimental budgets. Here we introduce the combination of thickness-gradient libraries and automated scanning probe microscopy as a systematic pathway to elucidate growth modes and disentangle ferroelectric and electrochemical contributions in ferroelectric thin films. As a model system, we explore the Hf 0.5 Zr 0.5 O 2 (HZO) gradient thin films grown on La x Sr 1-x MnO 3 (LSMO) bottom electrode thin films. Automated piezoresponse force microscopy, spectroscopy, and lithography reveals that irreversible topographic deformation arises from electrochemical activity at the LSMO surface, whereas reversible phase inversion in HZO reflects ferroelectric switching. Automated topography height-map scans are used to further quantify nucleation density, particle-size evolution, and roughness correlations across the thickness-gradient, demonstrating that improved plume stabilization during growth suppresses interfacial reactions and promotes dense, fine-grained HZO conducive to ferroelectric phase formation. This combined materials-engineering and automated-SPM framework establishes a platform for high-throughput, mechanism-resolved characterization of ferroionic and ferroelectric responses in complex oxide films.

FOS: Physical sciences↗