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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Effect of detector dead time on the performance of optical direct-detection communication links

Avalanche photodiodes (APDs) operating in the Geiger mode can provide a significantly improved single-photon detection sensitivity over conventional photodiodes. However, the quenching circuit required to remove the excess charge carriers after each photon event can introduce an undesirable dead time into the detection process. The effect of this detector dead time on the performance of a binary pulse-position-modulated (PPM) channel is studied by analyzing the error probability. It is shown that, when background noise is negligible, the performance of the detector with dead time is similar to that of a quantum-limited receiver. For systems with increasing background intensities, the error rate of the receiver starts to degrade rapidly with increasing dead time. The power penalty due to detector dead time is also evaluated and shown to depend critically on badkground intensity as well as dead time. Given the expected background strength in an optical channel, therefore, a constraint must be placed on the bandwidth of the receiver to limit the amount of power penalty due to detector dead time.

Chen, C.-C.↗
NASA NTRS1989

Near contact phenomena and transient effects in far infrared photoconductors

A combination of experimental and modeling work is summarized in two areas: first, the calculation of excess free carrier and space charge distributions near contacts and their effects on device resistivity, and second, the characterization of a slow transient response (tau approx. 1 sec) in Ge:Be detectors which is due to trapping associated with Be(+) formation. In both cases, analytical models, based on continuity and rate equations, have been developed to enable the application of these findings to a wide variety of photoconductor materials.

Haegel, Nancy M.↗
NASA NTRS1990

Response of a DRAM to single-ion tracks of different heavy-ion species and stopping powers

Multiple-bit errors caused by single-ion tracks in a 256-kb DRAM fabricated by a bulk process were observed for different ion species and stopping power values. The results demonstrate the utility of this device for the evaluation of ion-beam uniformity and ion-beam-induced charge collection in IC devices. The data indicate that single-ion-induced charge transport results in multiple-bit error clusters due to lateral diffusion of excess minority carriers (electrons). Charge collection occurred from a depth of up to 35 microns from the surface of the device. An apparent charge loss was observed for very heavy ions with a high stopping power (Au at 350 MeV).

Zoutendyk, J. A.↗
NASA NTRS1993

The quantum efficiency of HgCdTe photodiodes in relation to the direction of illumination and to their geometry

A theoretical study of the effect of the direction of the incident light on the quantum efficiency of homogeneous HgCdTe photodiodes suitable for sensing infrared radiation in the 8-12 microns atmospheric window is presented. The probability of an excess minority carrier to reach the junction is derived as a function of its distance from the edge of the depletion region. Accordingly, the quantum efficiency of photodiodes is presented for two geometries. In the first, the light is introduced directly to the area in which it is absorbed (opaque region), while in the second, the light passes through a transparent region before it reaches the opaque region. Finally, the performance of the two types of diodes is analyzed with the objective of finding the optimal width of the absorption area. The quantum efficiency depends strongly on the way in which the light is introduced. The structure in which the radiation is absorbed following its crossing the transparent region is associated with both higher quantum efficiency and homogeneity. In addition, for absorption region widths higher than a certain minimum, the quantum efficiency in this case is insensitive to the width of the absorption region.

Rosenfeld, D.↗
NASA NTRS1988

Effect of Detector Dead Time on the Performance of Optical Direct-Detection Communication Links

Avalanche photodiodes (APDs) operating in the Geiger mode can provide a significantly improved single-photon detect ion sensitivity over conventional photodiodes. However, the quenching circuit required to remove the excess charge carriers after each photon event can introduce an undesirable dead time into the detection process. The effect of this detector dead time on the performance of a binary pulse-position-modulted (PPM) channel is studied by analyzing the error probability. It is shown that, when back- ground noise is negligible, the performance of the detector with dead time is similar to that o f a quantum-limited receiver. For systems with increasing background intensities, the error rate of the receiver starts to degrade rapidly with increasing dead time. The power penalty due to detector dead time is also evaluated and shown to depend critically on background intensity as well as dead time. Given the expected background strength in an optical channel, therefore, a constraint must be placed on the bandwidth of the receiver to limit the amount of power penalty due to detector dead time.

Chen, C.-C.↗
NASA NTRS1976

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 Ohm-cm silicon solar cells

The observed low open-circuit voltage in 0.1 Ohm-cm solar cells is probably related to an excessively high diode saturation current. Theoretical studies conducted by Lindholm et al. (1975) and by Godlewski et al. (1975) have shown that a high saturation current could be produced by either high recombination rates or bandgap narrowing effects. A description is given of an investigation which shows that bandgap narrowing effects have a first order significance in determining the charge carrier transport controlling the open-circuit voltage of 0.1 Ohm-cm silicon solar cells.

Godlewski, M. P.↗
NASA NTRS1991

High figure-of-merit n-type SiGe/GaP alloys

Improvements to the figure-of-merit of n-type SiGe have been achieved via a systematic anneal study aimed at determining the optimal P:Ga ratio. Figures-of-merit of 0.85 to 0.90 x 10-3K-1 have been routinely and reproducibly achieved starting with an initial P:Ga ratio of 3:1. These samples have carrier concentrations in excess of 4.0 x 1020/cu cm, the highest reported for SiGe. This value has been shown to be too high, resulting in unfavorably low Seebeck coefficients. The optimal carrier concentration has been shown to be 1.5-3.0 x 1020/cu cm. Thus, further improvements will be achieved by reductions in the P and Ga concentrations.

Scoville, A. N.↗
NASA NTRS2005

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.

Carlin, J. A.↗
NASA NTRS1984

Development of high efficiency solar cells on silicon web

Web base material is being improved with a goal toward obtaining solar cell efficiencies in excess of 18% (AM1). Carrier loss mechanisms in web silicon was investigated, techniques were developed to reduce carrier recombination in the web, and web cells were fabricated using effective surface passivation. The effect of stress on web cell performance was also investigated.

Rohatgi, A.↗
NASA NTRS1985

Carrier tracking by smoothing filter can improve symbol SNR

The potential benefit of using a smoothing filter to estimate carrier phase over use of phase locked loops (PLL) is determined. Numerical results are presented for the performance of three possible configurations of the deep space network advanced receiver. These are residual carrier PLL, sideband aided residual carrier PLL, and finally sideband aiding with a Kalman smoother. The average symbol signal to noise ratio (CNR) after losses due to carrier phase estimation error is computed for different total power SNRs, symbol rates and symbol SNRs. It is found that smoothing is most beneficial for low symbol SNRs and low symbol rates. Smoothing gains up to 0.4 dB over a sideband aided residual carrier PLL, and the combined benefit of smoothing and sideband aiding relative to a residual carrier loop is often in excess of 1 dB.

Hurd, W. J.↗
NASA NTRS1986

Carrier tracking by smoothing filter improves symbol SNR

The potential benefit of using a smoothing filter to estimate carrier phase over use of phase locked loops (PLL) is determined. Numerical results are presented for the performance of three possible configurations of the deep space network advanced receiver. These are residual carrier PLL, sideband aided residual carrier PLL, and finally sideband aiding with a Kalman smoother. The average symbol signal to noise ratio (SNR) after losses due to carrier phase estimation error is computed for different total power SNRs, symbol rates and symbol SNRs. It is found that smoothing is most beneficial for low symbol SNRs and low symbol rates. Smoothing gains up to 0.4 dB over a sideband aided residual carrier PLL, and the combined benefit of smoothing and sideband aiding relative to a residual carrier loop is often in excess of 1 dB.

Pomalaza-Raez, Carlos A.↗
NASA NTRS2004

Wing Leading Edge Debris Analysis

This is a slide presentation showing the Left Wing Leading Edge (WLE) heat damage observations: Heavy "slag" deposits on select RCC panels. Eroded and knife-edged RCC rib sections. Excessive overheating and slumping of carrier panel tiles. Missing or molten attachment bolts but intact bushing. Deposit mainly on "inside" RCC panel. Deposit on some fractured RCC surface

Shah, Sandeep↗
NASA NTRS2024

Investigation into the Origin of the RF Phase Noise for the LISA Laser Transmitter

The Laser Interferometer Space Antenna (LISA) mission is a collaborative consortium led by the European Space Agency (ESA)in cooperation with the National Aeronautics and Space Administration (NASA). LISA’s goal is to capture gravitational wave events, such as spacetime distortions caused by massive orbiting bodies. Multiple low noise, single frequency master oscillator power amplifier (MOPA) lasers with a polarization-maintaining Yb-fiber amplifier will serve as the light sources for the LISA observatory. The NASA Goddard Space Flight Center (GSFC)is currently developing the laser transmitters for this project. The LISA lasers will carry radio frequency (RF)sidebands for exchanging reference RF clock information between spacecrafts. Excess phase noise, especially carrier-sideband differential phase noise added to the modulation side band by the phase modulator and the fiber amplifier, becomes a concern. In the gravitational wave frequency ranges, leading sources of this RF “differential” phase noise can be both intrinsic and extrinsic. Examples of intrinsic sources include thermal load on the active fiber, thermo-mechanical induced birefringence, and nonlinearities in the various passive and active fibers. Extrinsic sources can include external temperature fluctuations and infrasonic mechanical strain or vibrations. These noise spectra usually include both white and pink (1/f) thermal noise contributions. This work investigates the physical origins and impact of these sources of RF phase noise, and their characteristic spectra and management will be discussed.

Laser Interferometer Space Antenna↗
NASA NTRS1988

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Kachare, R.↗
NASA NTRS2001

Embedded Coplanar Strips Traveling-Wave Photomixers

The electric field distribution in photomixers with electrodes deposited on the surface has already been calculated. It was shown that the strength of the electric field diminishes rapidly with depth. It was argued that the resulting reduction of the effective interaction volume of the device lowers the optical-to-heterodyne conversion. In this paper, we will present the results of our investigation on the influence of the electrode placement on the performance of photomixers. We have fabricated and measured traveling-wave photomixer devices which have both embedded and surface electrodes - the nominal spacing between the electrodes was 2 micrometers. Devices were made using either low-temperature-grown (LTG)-GaAs or ErAs:GaAs as the photoconductive material. The dark current, photocurrent, and radio frequency (RF) emission were measured at nominally 1 THz. The experimental data show a surprising difference in the behavior of ErAs:GaAs devices when the electrodes are embedded. A factor of two increase in RF radiation is observed for electric fields < 20 kV/cm. No such improvement was observed for the LTG-GaAs devices. We argue that the distinctive behavior of the two photoconductive materials is due to differences in the crystal structure - LTG-GaAs is isotropic, while ErAs:GaAs is uniaxial. We find that the carrier mobility in-plane (parallel) to the ErAs layers in the ErAs:GaAs superlattice is larger than orthogonal to these layers. The data indicate that carrier velocity overshoot is responsible for the excess radiation produced for the embedded electrode ErAs:GaAs devices.

Wyss, R. A.↗
NASA NTRS2006

Seal Investigations of an Active Clearance Control System Concept

In an effort to improve upon current thermal active clearance control methods, a first generation, fast-acting mechanically actuated, active clearance control system has been designed and installed into a non-rotating test rig. In order to harvest the benefit of tighter blade tip clearances, low-leakage seals are required for the actuated carrier segments of the seal shroud to prevent excessive leakage of compressor discharge (P3) cooling air. The test rig was designed and fabricated to facilitate the evaluation of these types of seals, identify seal leakage sources, and test other active clearance control system concepts. The objective of this paper is to present both experimental and analytical investigations into the nature of the face-seal to seal-carrier interface. Finite element analyses were used to examine face seal contact pressures and edge-loading under multiple loading conditions, varied E-seal positions and two new face seal heights. The analyses indicated that moving the E-seal inward radially and reducing face seal height would lead to more uniform contact conditions between the face seal and the carriers. Lab testing confirmed that moving the balance diameter inward radially caused a decrease in overall system leakage.

Steinetz, Bruce M.↗
NASA NTRS1993

Asynchronous timing and Doppler recovery in DSP based DPSK modems for fixed and mobile satellite applications

While conventional analog modems employ some kind of clock wave regenerator circuit for synchronous timing recovery, in sampled modem receivers the timing is recovered asynchronously to the incoming data stream, with no adjustment being made to the input sampling rate. All timing corrections are accomplished by digital operations on the sampled data stream, and timing recovery is asynchronous with the uncontrolled, input A/D system. A good timing error measurement algorithm is a zero crossing tracker proposed by Gardner. Digital, speech rate (2400 - 4800 bps) M-PSK modem receivers employing Gardner's zero crossing tracker were implemented and tested and found to achieve BER performance very close to theoretical values on the AWGN channel. Nyguist pulse shaped modem systems with excess bandwidth factors ranging from 100 to 60 percent were considered. We can show that for any symmetric M-PSK signal set Gardner's NDA algorithm is free of pattern jitter for any carrier phase offset for rectangular pulses and for Nyquist pulses having 100 percent excess bandwidth. Also, the Nyquist pulse shaped system is studied on the mobile satellite channel, where Doppler shifts and multipath fading degrade the pi/4-DQPSK signal. Two simple modifications to Gardner's zero crossing tracker enable it to remain useful in the presence of multipath fading.

Koblents, B.↗
NASA NTRS1991

Systematic study of sulfur isotopic composition in iron meteorites and the occurrence of excess S-33 and S-36

The paper concentrates on isotopic measurements of sulfur in different sulfur-carrier phases: troilite inclusions, Fe-Ni alloy, and schreibersite (possibly including daubreelite). Variations in S-34 isotope ratio are observed in some troilite inclusions, and no evidence of nucleosynthetic sulfur isotopic anomalies are found in the troilite inclusions. Excesses of S-33 and S-36 are observed in both FeNi alloy and schreibersite of Grant, Santa Clara, Tlacotepec, and Gibeon, with schreibersite possessing the greater magnitude of presumably spallogenic S-33 and S-36. It is concluded that the magnitude of the observed fractionation is consistent with troilite dissociation and/or vaporization following a collisional impact.

Gao, Xia↗