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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Enhanced superconducting qubit performance through ammonium fluoride etch

The performance of superconducting qubits is often limited by dissipation and two-level systems (TLS) losses. The dominant sources of these losses are believed to originate from amorphous materials and defects at interfaces and surfaces, likely as a result of fabrication processes or ambient exposure. Here, we explore a novel wet chemical surface treatment at the Josephson junction-substrate and the substrate-air interfaces by replacing a buffered oxide etch (BOE) cleaning process with one that uses hydrofluoric acid followed by aqueous ammonium fluoride. We show that the ammonium fluoride etch process results in a statistically significant improvement in median $\text{T}_1$ by $\sim22\%$ (p = 0.002), and a reduction in the number of strongly-coupled TLS in the tunable frequency range. Microwave resonator measurements on samples treated with the ammonium fluoride etch after niobium deposition and etching also show $\sim33\%$ lower TLS-induced loss tangent compared to the BOE treated samples. As the chemical treatment primarily modifies the Josephson junction-substrate interface and substrate-air interface, we perform targeted chemical and structural characterizations to examine materials differences at these interfaces and identify multiple microscopic changes that could contribute to decreased TLS losses.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Plasma-assisted atomic layer etching of single-crystal diamond

Applications of near-surface nitrogen-vacancy (NV) centers in diamond are often limited by surface defects created during processing. Understanding and controlling plasma-induced surface damage is important for preserving the optical and spin properties of diamond NV centers. We report molecular dynamics simulations of a novel form of plasma-aided atomic layer etching of diamond. In this proposed scheme, the initial surface modification step consists of Ar + ion bombardment. This creates an amorphous layer at the surface, the thickness of which is controlled by the ion energy. Amorphization is known to help smooth the surface, at least locally, and would also serve to sputter clean an initially contaminated surface. A second step impacts the amorphous carbon layer with O + between about 1 and 5 eV. Simulations show that this energy range will remove the amorphous carbon but will not etch the underlying diamond. Though this energy range is not trivial to achieve in a conventional low-temperature plasma, potential methods for creating these low-energy O + ions are discussed. In addition to a-C etching, the O + impacts are predicted to remove any isolated (100) diamond terraces by selectively attacking the edges of the terraces. The proposed atomic layer etching (ALE) approach reverses the conventional ALE sequence in which the surface modification step is usually chemical modification (oxidation in this case), followed by a removal step using Ar + impacts. This plasma ALE procedure is predicted to create a diamond surface that is atomically flat and defect free.

Draney, J. S. [Princeton University, NJ (United St↗
DOE OSTI2025

Plasma-Induced Tailoring of Graphene Oxide Surfaces for Electrochemical Applications: Functionalization and Etching

This study investigates the use of radio frequency air plasma as an eco-friendly method to rapidly and reversibly tailor the surface properties of graphene oxide (GO) films. We observed a transition from hydrophilic (contact angle ∼55°) to superhydrophilic (<10°) with short plasma exposure, attributed to a synergistic combination of surface modification and etching. Spectroscopic analyses (FTIR, XPS) revealed early stage formation of carbonyl groups and reduction of hydroxyls, while longer treatments induced atomic-level etching (AFM) and structural changes (XRD). This surface engineering enhanced the dielectric properties of GO films but led to reduced aqueous stability. The elucidated interplay between plasma-induced functionalization and etching provides valuable insights for the controlled modification of GO surfaces for various applications, including advanced dielectrics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Atomic scale etching of diamond: insights from molecular dynamics simulations

Diamond is a promising material for multiple applications in quantum information processing and sensing as well as applications in microelectronics. However, diamond devices can be limited by surface defects that compromise charge stability and spin coherence, among others. Improved strategies in plasma etching of diamond could play an important role in minimizing or eliminating these defects. In this work, we explore plasma-assisted atomic scale etching of diamond using argon ions (Ar + ), hydrogen ions (H + ) and hydrogen atoms (H). We employ classical molecular dynamics (MD) simulations and test several interatomic potentials based on the Reactive Empirical Bond Order (REBO) form with comparisons to a variety of published experimental results. We performed MD simulations of low-energy hydrogen ($\leqslant$50 eV) and argon ( $\leqslant$200 eV) ion bombardment of diamond surfaces. Ar + bombardment can be used to locally smooth initially rough diamond surfaces via the formation of an amorphous C layer, the thickness of which increases with argon ion energy. Subsequent exposure with hydrogen ions (or fast neutrals) will selectively etch this amorphous C layer, leaving the underlying diamond layer mostly intact if the H energy is maintained below about 10 eV. The simulations suggest that combining Ar + smoothing with selective, near threshold energy H removal of amorphous C can be an effective strategy for diamond surface engineering, leading to more reliable and sensitive diamond color center devices.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Effect of Acid Etching Time in Ti 3 C 2 MXene’s Interlayer Spacing and Conductivity

Materials with sheet-like morphologies often form interconnected networks of layers or flakes, offering continuous channels for electron and ion transport in electrochemical energy storage applications. One such material is the recently discovered class of 2-D transition metal carbides/nitrides, called MXene, whose general formula is M n+1 X n T x (where M = transition metal; n = 1, 2, or 3; X = carbon or nitrogen; and T x = termination group such as –F, –OH, and/or =O). Ti 3 C 2 , one of the most studied MXene, can be synthesized by selectively etching the aluminum layer in Ti 3 AlC 2 (also called MAX phase). The most straightforward technique to exfoliate this layer is by wet-chemical etching with high-concentration hydrofluoric acid (HF). In this study, the effect of etching time on the morphology, interlayer spacing, and electrical conductivity of the resultant MXene was studied.

25 ENERGY STORAGE↗
DOE OSTI2025

Deep potential molecular dynamics simulations of ion-enhanced etching of silicon by atomic chlorine

The continued development of plasma-assisted processing techniques requires a fundamental understanding of plasma-surface interactions. Molecular dynamics (MD) simulations have been employed to complement experimental studies and better understand the properties of such systems. Recently, machine learning (ML) methods have enabled the development of ab initio-based interatomic potentials, which can be generalized to complex combinations of multiple atom types. In this work, we use ML potentials developed using the Deep Potential Molecular Dynamics (DeepMD) framework to provide a model of ion-enhanced etching of Si by Cl atoms. We demonstrate the importance of proper selection of the training data set to the accuracy of the DeepMD model and compare our results to MD results using empirical potentials, as well as to experimental measurements. Exposure of undoped Si at 300 K to thermal Cl atoms yields a steady-state Cl coverage of 1.25 monolayers, which is slightly lower than the value obtained in previous experimental studies. Predictions of Si etch yields by simultaneous Cl atom and Ar + ion impacts as a function of ion energy, neutral to ion flux ratio, and angle of incidence of the ions are in reasonably good agreement with classical MD results and experimental measurements. Finally, etch yields and SiCl x mixed layer thicknesses during simultaneous bombardment of the Si(100) surface by Cl atoms and Cl + ions are in good agreement with experimental data. In conclusion, the present work is a necessary condition for the extension of the DeepMD procedure to more complex systems of interest in plasma-surface interactions.

Artificial neural networks↗
DOE OSTI2024

Optimizing Aluminum Bonding: Exploring Surface Roughness and Contact Angle Effects through Plasma and Acid Etching Contrasts

The use of adhesives to replace traditional techniques like welding and riveting has been on the rise in various industries as increasingly complex geometries and situations for bonding is required. It’s well known in the scientific community that an adhesive bond is only as efficient as the surface preparation used beforehand. Plasma treatments have been shown to gently clean the surface by only removing the top-most layer from the adherend and “charging” the surface instead of berating it. Whereas chemical treatments “etch” the surface in hopes of increasing surface area by increasing surface roughness. This method can be difficult to control quantitatively and can generate waste leading to serious environmental concerns. This study aims to address the encountered differences between plasma treatments and acid etching on aluminum substrates for adhesive bonding. Treating the surface of adherends plays a crucial role in promoting a good bond between adhesive and adherend. In this study, the effects of plasma and acid treatments are categorized using surface roughness measurements as well as contact angle which have been shown to correlate to mechanical strength. When evaluating different surface treatments, it is notable to mention that not only surface roughness and contact angle play a role in determining which method is most effective but also the consequences of the treatment itself. It was found that although chemical etching was the most effective in increasing roughness and decreasing contact angle, it generates a large amount of waste and is not sustainable compared to plasma work which uses a renewable process. The results from this work provide a deeper understanding of the relationship between surface treatments and surface roughness/contact angle and how this relates to a stronger adhesive bond.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Optimizing Aluminum Bonding: Exploring Surface Roughness and Contact Angle Effects through Plasma and Acid Etching Contrasts.

The use of adhesives to replace traditional techniques like welding and riveting has been on the rise in various industries as increasingly complex geometries and situations for bonding is required. It’s well known in the scientific community that an adhesive bond is only as efficient as the surface preparation used beforehand. Plasma treatments have been shown to gently clean the surface by only removing the top-most layer from the adherend and “charging” the surface instead of berating it. Whereas chemical treatments “etch” the surface in hopes of increasing surface area by increasing surface roughness. This method can be difficult to control quantitatively and can generate waste leading to serious environmental concerns. This study aims to address the encountered differences between plasma treatments and acid etching on aluminum substrates for adhesive bonding. Treating the surface of adherends plays a crucial role in promoting a good bond between adhesive and adherend. In this study, the effects of plasma and acid treatments are categorized using surface roughness measurements as well as contact angle which have been shown to correlate to mechanical strength. When evaluating different surface treatments, it is notable to mention that not only surface roughness and contact angle play a role in determining which method is most effective but also the consequences of the treatment itself. It was found that although chemical etching was the most effective in increasing roughness and decreasing contact angle, it generates a large amount of waste and is not sustainable compared to plasma work which uses a renewable process. The results from this work provide a deeper understanding of the relationship between surface treatments and surface roughness/contact angle and how this relates to a stronger adhesive bond

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

In Situ Tracking of Nonthermal Plasma Etching of ZIF-8 Films

Surface characterization is critical for understanding the processes used for preparing catalysts, sorbents, and membranes. Nonthermal plasma (NTP) is a process that achieves high reactivity at low temperatures and is used to tailor the surface properties of materials. In this work, we combine the capabilities of infrared reflection absorption spectroscopy (IRRAS) with NTP for the in situ interrogation of zeolitic imidazolate framework-8 (ZIF-8) thin films to probe modifications in the material induced by oxygen and nitrogen plasmas. The IRRAS measurements in oxygen plasma reveal etching of organic ligands with sequential removal of the methyl group and imidazole ring and with the formation of carbonyl moieties (C═O). In contrast, nitrogen plasma induces mild etching and grafting of nitrile groups (−C≡N). Scanning electron microscopy imaging shows that oxygen plasma, at prolonged times, significantly degrades the ZIF-8 film at the grain boundaries. Treatment of ZIF-8 membranes using mild plasma conditions yields a fivefold enhancement for H 2 /N 2 and CO 2 /CH 4 ideal selectivities and an eightfold enhancement for CO 2 /N 2 ideal selectivity. Additionally, the new tools described here can be used for spectroscopic in situ tracking of plasma-induced chemistry on thin films in general.

IRRAS↗
DOE OSTI2025

Physical patterning of high-Q superconducting niobium resonators via ion beam etching

The development of superconducting quantum circuits increasingly involves the exploration of chemically distinct materials and complex multilayered structures. Accelerating this trend may benefit from low-damage, materials-agnostic patterning techniques that are compatible with a broad range of materials. Here, in this work, we investigate the utility of low-energy ion beam etching (IBE), a physical patterning technique, as an alternative to reactive ion etching for fabricating low-loss superconducting resonators. We use niobium (Nb) resonators as a test platform, leveraging their well-characterized performance metrics for benchmarking. To address IBE-induced surface redeposition, we introduce an in situ aluminum capping layer combined with targeted post-fabrication chemical treatment. This strategy yields resonators with internal quality factors as high as 6 × 10 5 in the single-photon regime at 50 mK. These results establish low-energy IBE as a promising patterning technique for superconducting devices, with the potential to accelerate development across chemically diverse and multilayered material platforms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Depolymerization as a Design Strategy: Depolymerization Etching of Polymerization-Induced Microphase Separations

Thermally triggered depolymerization has traditionally been viewed through the lens of sustainability and recycling, not as a constructive tool for materials design. Herein, we show that selective, thermally triggered depolymerization to gaseous monomer serves as a solvent-free strategy for generating porosity in nanostructured polymer materials, offering a means to bypass the mass transport limitations inherent in conventional solution-based etching. As a demonstration platform, we employed polymerization-induced microphase separation (PIMS) to generate disordered bicontinuous block copolymer structures with embedded depolymerizable domains. By incorporating a methacrylate block susceptible to thermal depolymerization within a cross-linked, depolymerization-resistant styrenic matrix, we developed a process we term depolymerization etching of polymerization-induced microphase separations (DEPIMS). This approach enables highly selective and efficient domain removal via reversion to monomer to produce mesoporous materials with high surface areas (>200 m 2 /g). Subsequent surface functionalization yielded mesoporous adsorbents with tunable uptake kinetics and among the highest dye adsorption capacities reported for PIMS-derived materials, demonstrating the adaptability of the DEPIMS platform for chemical separations. DEPIMS can also be extended to a gram-scale, one-pot approach to yield mesoporous materials with recoverable monomer in under 12 h. These findings reposition thermal depolymerization from a sustainability tool to a broadly enabling strategy for scalable, on-demand fabrication of functional nanostructured materials.

Depolymerization↗
DOE OSTI2024

A transient site balance model for atomic layer etching

We present a transient site balance model of plasma-assisted atomic layer etching of silicon (Si) with alternating exposure to chlorine gas (Cl 2 ) and argon ions (Ar + ). Molecular dynamics (MD) simulation results are used to provide parameters for the model. The model couples the dynamics of a top monolayer surface region ('top layer') and a perfectly mixed subsurface region ('mixed layer'). The differential equations describing the rates of change of the Cl coverage in the two layers are transient mass balances. Model predictions include Cl coverages and rates of etching of various species from the surface as a function of Cl 2 or Ar + fluence. The simplified phenomenological model reproduces the MD simulation results well over a range of conditions. Comparing model predictions directly to experimental optical emission spectroscopy data, as reported in a previous paper, provides further evidence of the accuracy of the model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Acid Etching‐Driven Self‐Assembly of Mn‐Shell Inducing Rock‐Salt Phase for Enhanced Single‐Crystal Ni‐Rich Cathodes

With the wide adoption of Li‐ion batteries, Ni‐rich cathode is considered as one of the most promising candidates of cathodes due to its high energy density and low cost. However, stability decreased with increasing Ni content in the Ni‐rich cathode. To solve this bottleneck, many strategies, such as coating, doping, surface modification, and special morphologies, have been developed. Herein, we introduce a groundbreaking approach for enhancing Ni‐rich cathode through an innovative acid etching process that promotes Mn shell self‐assembly, inducing a rock‐salt phase on the surface. This method not only simplifies the Ni‐rich cathode modification process, but also significantly improves the structural stability and electrochemical performance of Ni‐rich cathode. Our findings demonstrate that developed single‐crystal Ni‐rich cathode shows 3–34 % better stability compared to both commercial modified Ni‐rich cathode and unmodified counterparts. The unique Mn shell effectively mitigates reversible phase shifts during cycling, contributing to a remarkable enhancement in cycling stability. Additionally, this novel fabrication technique paves the way for cost‐effective production of high‐performance cathode materials, offering substantial benefits for lithium‐ion battery technology. And this study proves the potential of this method in advancing the design and development of durable, high‐capacity cathode materials for next‐generation batteries.

Ni-rich cathode↗
DOE OSTI2025

Etching-Chemistry-Driven Ruthenium Doping on Ti 3 C 2 T x MXene for Optimizing Electrochemical Performance

We demonstrate that the etching chemistry used during MXene synthesis from Ti 3 AlC 2 MAX phase significantly influences surface functionalization and structural vacancies, which in turn affect ruthenium (Ru) ion interactions. Using hydrofluoric acid (HF) and ammonium bifluoride (NH 4 HF 2 ) as etchants, we obtained MXene surfaces with distinct functional groups and Ti vacancies that impact Ru ion interactions and electrochemical performance. Both MXene variants (labeled MX(H) and MX(N), respectively) exhibited negative zeta potentials in their pristine state, but upon the addition of Ru the zeta potential for MX(H) reached 12.9 mV while that for MX(N) remained negative at −6.4 mV. This adsorption resulted in a 14.4-fold increase in the specific capacitance of MX(H)/Ru compared to pristine MX(H), whereas MX(N)/Ru exhibited only a 4.4-fold increase over its pristine counterpart. X-ray diffraction analysis identified the formation of ammonium titanium oxide fluoride, (NH 4 ) 3 TiOF 5 , on MX(N), which likely contributed to its reduced Ru adsorption. X-ray photoelectron spectroscopy suggested the presence of Ti vacancies in both MXene variants; however, their behavior toward Ru accommodation differed markedly, with MX(H) showing the most obvious shift in the Ti 2p peak in the XPS survey spectrum, while MX(N) showed the most obvious shift in the C 1s peak. Electron paramagnetic resonance spectroscopy further demonstrated a distinct alteration in the spectral signatures of MX(H) upon Ru addition, in contrast to the negligible changes in MX(N), indicating effective passivation of the Ti defect sites in MX(H) via vacancy-assisted Ru doping. Cyclic voltammetry showed that Ru-incorporated MX(H) nanocomposites exhibit more efficient redox-active sites, as reflected in their higher capacitance values. These findings highlight the pivotal role of MXene surface chemistry in controlling cation adsorption, providing valuable insights for the rational design of high-performance electrodes.

2D surface engineering↗
DOE OSTI2025

Magnetic La 0.7 Sr 0.3 MnO 3 Membranes Synthesized by Etching a Sr 3 Al 2 O 6 Sacrificial Layer Using an Intermediary Manganite Protection Layer

The integration of perovskite oxides onto flexible substrates has witnessed significant advancements owing to the development of an epitaxial lift-off technique utilizing a Sr 3 Al 2 O 6 sacrificial layer. However, Sr 3 Al 2 O 6 is susceptible to instability in both air and high-temperature oxygen atmospheres, potentially leading to degradation during the growth of the functional oxide layer. In this study, we investigate the use of an oxygen-deficient La 0.7 Sr 0.3 MnO 3 as capping layer, and demonstrate its ability to stabilize Sr 3 Al 2 O 6 films in ambient air. We successfully synthesized freestanding La 0.7 Sr 0.3 MnO 3 membranes by etching this sacrificial layer and transferring them onto flexible polymer substrates. Importantly, the magnetic properties of the La 0.7 Sr 0.3 MnO 3 films are preserved in these membranes. Furthermore, our results underline that employing a thin manganite capping layer ensures both high structural quality and the preservation of functional properties in the resulting membranes.

Deposition↗
DOE OSTI2025

Time-resolved Brownian tomography of single nanocrystals in liquid during oxidative etching

Colloidal nanocrystals inherently undergo structural changes during chemical reactions. The robust structure-property relationships, originating from their nanoscale dimensions, underscore the significance of comprehending the dynamic structural behavior of nanocrystals in reactive chemical media. Moreover, the complexity and heterogeneity inherent in their atomic structures require tracking of structural transitions in individual nanocrystals at three-dimensional (3D) atomic resolution. In this study, we introduce the method of time-resolved Brownian tomography to investigate the temporal evolution of the 3D atomic structures of individual nanocrystals in solution. The methodology is applied to examine the atomic-level structural transformations of Pt nanocrystals during oxidative etching. The time-resolved 3D atomic maps reveal the structural evolution of dissolving Pt nanocrystals, transitioning from a crystalline to a disordered structure. Our study demonstrates the emergence of a phase at the nanometer length scale that has received less attention in bulk thermodynamics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗