Emitter current suppression in a high-low-junction emitter solar cell using an oxide-charge-induced electron accumulation layer
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Neugroschel, A.↗
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Rare Earth Garnet Selective Emitter
Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approx. = 0.75, sup 4)|(sub 15/2) - (sup 4)|(sub 13/2),for Er-YAG and epsilon(sub lambda) approx. = 0.65, (sup 5)|(sub 7) - (sup 5)|(sub 8) for Ho-YAG) at 1500 K. In addition, low out-of-band spectral emittance, epsilon(sub lambda) less than 0.2, suggest these materials would be excellent candidates for high efficiency selective emitters in thermophotovoltaic (TPV) systems operating at moderate temperatures (1200-1500 K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. Selective emitters in the near IR are of special interest for thermophotovoltaic (TPV) energy conversion. The most promising solid selective emitters for use in a TPV system are rare earth oxides. Early spectral emittance work on rare earth oxides showed strong emission bands in the infrared (0.9 - 3 microns). However, the emittance outside the emission band was also significant and the efficiency of these emitters was low. Recent improvements in efficiency have been made with emitters fabricated from fine (5 - 10 microns) rare earth oxide fibers similar to the Welsbach mantle used in gas lanterns. However, the rare earth garnet emitters are more rugged than the mantle type emitters. A thin film selective emitter on a low emissivity substrate such as gold, platinum etc., is rugged and easily adapted to a wide variety of thermal sources. The garnet structure and its many subgroups have been successfully used as hosts for rare earth ions, introduced as substitutional impurities, in the development of solid state laser crystals. Doping, dependent on the particular ion and crystal structure, may be as high as 100 at. % (complete substitution of yttrium ion with the rare earth ion). These materials have high melting points, 1940 C for YAG (Yttrium Aluminum Garnet), and low emissivity in the near infrared making them excellent candidates for a thin film selective emitter. As previously stated, the spectral emittance of a rare earth emitter is characterized by one or more well defined emission bands. Outside the emission band the emittance(absorptance) is much lower. Therefore, it is expected that emission outside the band for a thin film selective emitter will be dominated by the emitter substrate. For an efficient emitter (power in the emission band/total emitted power) the substrate must have low emittance, epsilon(sub S). This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium(Ho) and erbium (Er) doped YAG thin film selective emitters at (1500 K), and compares those results with the theoretical spectral emittance.
Lowe, Roland A.↗
Thermophotovoltaic Generators Using Selective Metallic Emitters
In the literature to date on thermophotovoltaic (TPV) generators, two types of infrared emitter's have been emphasized : gray body emitters and rare earth oxide selective emitters. The gray body emitter is defined as an emitter with a spectral emissivity independent of wavelength whereas the rare earth oxide selective emitter is idealized as a delta function emitter with a high emissivity at a select wavelength and a near zero emissivity at all other wavelengths. Silicon carbide is an example of a gray body emitter and ER-YAG is an example of a selective emitter. The Welsbach mantle in a common lantern is another example of an oxide selective emitter. Herein, we describe an alternative type of selective emitter, a selective metallic emitter. These metallic emitters are characterized by a spectral emissivity curve wherein the emissivity monotonically increases with shorter infrared wavelengths as is shown. The metal of curve "A", tungsten, typifies this class of selective metallic emitter's. In a thermophotovoltaic generator, a photovoltaic cell typically converts infrared radiation to electricity out to some cut-off wavelength. For example, Gallium Antimonide (GaSb) TPV cells respond out to 1.7 microns. The problem with gray body emitters is that they emit at all wavelengths. Therefore, a large fraction of the energy emitted will be outside of the response band of the TPV cell. The argument for the selective emitter is that, ideally, all the emitted energy can be in the cells response band. Unfortunately, rare earth oxide emitters are not ideal. In order to suppress the emissivity toward zero away from the select wavelength, the use of thin fiber's is necessary. This leads to a fragile emitter typical of a lantern mantle. Even given a thin ER-YAG emitter, the measured emissivity at the select wavelength of 1.5 microns has been reported to be 0.6 while the off wavelength background emissivity falls to only 0.2 at 5 microns. This gives a selectivity ratio of only 3. Another problem with a delta function selective emitter is its low power density at practical temperatures because of its narrow emission bandwidth. The concept of selectivity can be generalized by noting that we simply wish to maximize the ratio of in-cell-band power to out-of-cell-band power. Using this generalized selectivity concept and assuming a GaSb cell covered by a simple dielectric filter, we note that the emissivity selectivity ratio for tungsten is 0.3 (at 1.5 microns) / 0.07 (at 5 microns) = 4.3. In the folloy4ng sections, we note that the selective metallic emitters can be valuable in both radioisotope TPV generators in space and in hydrocarbon fired TPV generators here on earth.
Fraas, Lewis M.↗
Ultra-high Temperature Emittance Measurements for Space and Missile Applications
Advanced modeling and design efforts for many aerospace components require high temperature emittance data. Applications requiring emittance data include propulsion systems, radiators, aeroshells, heatshields/thermal protection systems, and leading edge surfaces. The objective of this work is to provide emittance data at ultra-high temperatures. MSFC has a new instrument for the measurement of emittance at ultra-high temperatures, the Ultra-High Temperature Emissometer System (Ultra-HITEMS). AZ Technology Inc. developed the instrument, designed to provide emittance measurements over the temperature range 700-3500K. The Ultra-HITEMS instrument measures the emittance of samples, heated by lasers, in vacuum, using a blackbody source and a Fourier Transform Spectrometer. Detectors in a Nicolet 6700 FT-IR spectrometer measure emittance over the spectral range of 0.4-25 microns. Emitted energy from the specimen and output from a Mikron M390S blackbody source at the same temperature with matched collection geometry are measured. Integrating emittance over the spectral range yields the total emittance. The ratio provides a direct measure of total hemispherical emittance. Samples are heated using lasers. Optical pyrometry provides temperature data. Optical filters prevent interference from the heating lasers. Data for Inconel 718 show excellent agreement with results from literature and ASTM 835. Measurements taken from levitated spherical specimens provide total hemispherical emittance data; measurements taken from flat specimens mounted in the chamber provide near-normal emittance data. Data from selected characterization studies will be presented. The Ultra-HITEMS technique could advance space and missile technologies by advancing the knowledge base and the technology readiness level for ultra-high temperature materials.
Rogers, Jan↗
Reappraisal of solid selective emitters
New rare earth oxide emitters show greater efficiency than previous emitters. As a result, based on a simple model the efficiency of these emitters was calculated. Results indicate that the emission band of the selective emitter must be at relatively low energy (less than or equal to .52 eV) to obtain maximum efficiency at moderate emitter temperatures (less than or equal to 1500 K). Thus low bandgap energy PV materials are required to obtain an efficient thermophotovoltaic (TPV) system. Of the 4 specific rare earths (Nd, Ho, Er, Yb) studied Ho has the largest efficiency at moderate temperatures (72 percent at 1500 K). A comparison was made between a selective emitter TPV system and a TPV system that uses a thermal emitter plus a band pass filter to make the thermal emitter behave like a selective emitter. Results of the comparison indicate that only for very optimistic filter and thermal emitter properties will the filter TPV system have a greater efficiency than the selective emitter system.
Chubb, Donald L.↗
Reappraisal of solid selective emitters
New rare earth oxide emitters show greater efficiency than previous emitters. As a result, based on a simple model the efficiency of these emitters was calculated. Results indicate that the emission band of the selective emitter must be at relatively low energy (less than or equal to .52 eV) to obtain maximum efficiency at moderate emitter temperatures (less than or equal to 1500 K). Thus, low bandgap energy PV materials are required to obtain an efficient thermophotovoltaic (TPV) system. Of the 4 specific rare earths (Nd, Ho, Er, Yb) studied, Ho has the largest efficiency at moderate temperatures (72 percent at 1500 K). A comparison was made between a selective emitter TPV system and a TPV system that uses a thermal emitter plus a band pass filter to make the thermal emitter behave like a selective emitter. Results of the comparison indicate that only for very optimistic filter and thermal emitter properties will the filter TPV system have a greater efficiency than the selective emitter system.
Chubb, Donald L.↗
Silicon Emitter Needle and Array Design for Indium Electrospray Arrays for Spacecraft Propulsion
A design for silicon microfabricated emitter arrays was developed for electrospray thrusters for indium propellant in compact architectures with scalable thrust, low mass and volume, high specific impulse and high efficiency operation. The design elements include tip height, height uniformity across the array, tip radii, axial groove depth, tip angle, emitter shank sidewall angle and number of emitters. They were derived from commercial liquid metal ion source designs and modeling, fabrication and test results. The most critical results of the emitter array design analysis suggest that microfabricated silicon emitter array emitters should have a height greater than 280 microns with a height uniformity of +/-10 microns, a tip half angle of 49° for uniform turn-on voltages and current across the array, low beam divergence and high mass utilization efficiency. Elements of the design were fabricated and demonstrated in single emitter and in 400 element emitter arrays to validate the design, fabrication and performance capability. The design height and uniformity of arrays was demonstrated for 85% of the emitters in a prototype array. Required tip and sidewall angles and groove depths have been microfabricated. Single microfabricated silicon emitters demonstrated better performance in current and voltage characteristics than commercially available liquid metal ion sources. Microfabricated emitters and arrays demonstrated the required current and stability performance to enable the MEP thruster development for indium propellant.
Marrese-Reading, Colleen M.↗
Rare earth garnet selective emitter
Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approximately equal to 0.74, ((4)l(sub 15/2)) - ( (4)l(sub13/2)), for Er-YAG and epsilon(sub lambda) approximately equal to 0.65, ((5)l(sub 7))-((5)l(sub 8)) for Ho-YAG) at excellent candidates for high efficiency selective emitters in the thermophotovoltaics (TPV) systems operating at moderate temperatures (1200-1500K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium (Ho), and erbium (Er) doped YAG thin film selective emitters at 1500 K, and compares those results with the theoretical spectral emittance.
Lowe, Roland A.↗
Spectral Emittance of Uncoated and Ceramic-Coated Inconel and Type 321 Stainless Steel
The normal spectral emittance of Inconel and type 321 stainless steel with different surface treatments was measured at temperatures of 900, 1,200, 1,500, and 1,800 F over a wavelength range of 1.5 to 15 microns. The measurements involved comparison of the radiant energy emitted by the heated specimen with that emitted by a comparison standard at the same temperature by means of a recording double-beam infrared spectrophotometer. The silicon carbide comparison standard had previously been calibrated against a laboratory black-body furnace. Surface treatments included electropolishing, sandblasting, electro-polishing followed by oxidation in air for 1/2 hour at 1,800 F, sandblasting followed by oxidation in air for 1/2 hour at 1,800 F, application of National Bureau of Standards coating A-418, and application of NBS ceramic coating N-143. The normal spectral emittance of both alloys in the electropolished condition was low and decreased very slightly with increasing wavelength while in the sandblasted condition it was somewhat higher and did not vary appreciably with wavelength. The oxidation treatment greatly increased the normal spectral emittance of both the electropolished and sandblasted type 321 stainless steel specimens and of the electropolished Inconel specimens and introduced some spectral selectivity into the curves. The oxidation increased the normal spectral emittance of the sandblasted Inconel specimens only moderately. Of the specimens to which a coating about 0.002 inch thick was applied, those coated with A-418 had higher emittance at all wavelengths than did those coated with N-143, and the coated specimens of Inconel had higher spectral emittance at all wavelengths than did the corresponding specimens of type 321 stainless steel. Both coatings were found to be partially transparent to the emitted energy at this thickness but essentially opaque at a thickness of 0.005 inch. Coated specimens with 0.005 inch or more of coating did not show the effect of the underlying metal on spectral emittance, and there was no significant difference at wavelengths greater than about five microns in the normal spectral emittance of specimens having the two coatings. At shorter wavelengths the normal spectral emittance of specimens coated with A-418 was greater than that of specimens coated with N-143.
Richmond, Joseph C.↗
Electrospray Thruster Performance with Microfabricated Emitter Arrays and Indium Propellant
The feasibility of a microfabricated indium-fueled electrospray thruster with excellent performance was demonstrated. High efficiency electrospray thrusters with microfabricated components are under development for very compact, distributable propulsion systems that can be employed on both very small and large spacecraft with 10X improvement over SOA in mass, volume and specific impulse The critical components of this technology are the microfabricated emitter arrays and the capillary force driven indium feed system. Grey scale electron-beam lithography patterning and reactive ion dry etching provided the required micron-scale etch precision and uniformity across an array of 400 emitters in 1 cm2. Initial tests of single microfabricated silicon emitters demonstrated better performance than industry standard single emitters and the performance required to achieve 200 micronewtons when scaled up to a thruster with 400 emitters in 1 cm2. Arrays of emitters tested in a preliminary prototype Microfluidic Electrospray Propulsion (MEP) thruster assembly demonstrated stable performance at estimated thrust levels of 5, 50, and 120 µN at extraction voltages less than 4 kV. Current stability was within 0.15 % at 120 µN with only 1.5% of the emitter current collected by the extractor electrode. Post-test inspections revealed that more than 99% of the 400 emitters were electrospraying during the test. Specific impulse was estimated to be >3100 s from measurements of total charge and consumed indium mass at an emitter voltage of 1470 V. The results of this investigation suggest that microfabricated indium electrospray thruster technology is both feasible and capable of excellent performance as a highly compact microthruster.
Marrese-Reading, Colleen M.↗
LAMP Emittance Budget, Rev. 1
This report summarizes the performance limits of the LANSCE Coupled-Cavity Linac (CCL). These results are captured or summarized directly from the references cited. This report was written in support of the LANSCE Modernization Project (LAMP). This brief report summarizes the emittance budget for the LANSCE Modernization Project (LAMP). While the project Key Performance Parameters (KPPs) specify threshold and objective requirements for charge delivered to each experimental area, no upper limits on beam emittances are specified. To maintain low losses in the high-energy section of the LANSCE linac and hands-on maintenance, some upper limits on beam emittance need to be specified for the new LAMP front-end performance. The scope of the LAMP project replaces the injector section and drift-tube linac (DTL) up to 100 MeV of the existing LANSCE linac. This new design replacement will be integrated with the remaining coupled cavity linac (CCL) which makes up most of the accelerator at LANSCE and accelerates the beam to a final energy of 800 MeV. The initial approach that has been used to define an emittance budget for the new LAMP front end is based on recent and historical measured beam emittances at 100 MeV for the three beam types accelerated at LANSCE: H+ (protons for isotope production), LBEG (H- beam for delivery to proton radiography and to the Lujan neutron spallation target, and MPEG (H- beam for delivery to the Weapons Neutron Research facility). The emittance budget (upper limit) for each beam type has been selected to maintain the losses in the CCL to a level approximately equivalent to those observed in present operations to first order. However, the goal of the LAMP project is to improve the quality of the beams injected into the CCL, if possible, thus allowing for higher average current operation while also lowering beam losses and activation at high beam energies. The table below summarizes the beam measurements evaluated and used to establish a conservative emittance budget for LAMP based on known historical beam losses and activation. However, based on estimates of the CCL admittance and the Isotope Production Facility (IPF) beamline acceptance, a more relaxed transverse emittance upper limit of 0.095 π-cm-mrad, rms, normalized may be acceptable at 100 MeV while still meeting the LAMP performance requirements for charge delivery to each LANSCE experimental area and maintaining hands-on maintenance. This upper limit is supported by a recent analysis of operational data. Additionally, the present conceptual LAMP front-end design meets this requirement.
43 PARTICLE ACCELERATORS↗
Thermal emittance enhancement of graphite-copper composites for high temperature space based radiators
Graphite-copper composites are candidate materials for space based radiators. The thermal emittance of this material, however, is a factor of two lower than the desired emittance for these systems of greater than or equal to 0.85. Arc texturing was investigated as a surface modification technique for enhancing the emittance of the composite. Since the outer surface of the composite is copper, and samples of the composite could not be readily obtained for testing, copper was used for optimization testing. Samples were exposed to various frequencies and currents of arcs during texturing. Emittances near the desired goal were achieved at frequencies less than 500 Hz. Arc current did not appear to play a major role under 15 amps. Particulate carbon was observed on the surface, and was easily removed by vibration and handling. In order to determine morphology adherence, ultrasonic cleaning was used to remove the loosely adherent material. This reduced the emittance significantly. Emittance was found to increase with increasing frequency for the cleaned samples up to 500 Hz. The highest emittance achieved on these samples over the temperature range of interest was 0.5 to 0.6, which is approximately a factor of 25 increase over the untextured copper emittance.
Rutledge, Sharon K.↗
Thermal emittance enhancement of graphite-copper composites for high temperature space based radiators
Graphite-copper composites are candidate materials for space based radiators. The thermal emittance of this material, however, is a factor of two lower than the desired emittance for these systems of greater than or equal to 0.85. Arc texturing was investigated as a surface modification technique for enhancing the emittance of the composite. Since the outer surface of the composite is copper, and samples of the composite could not be readily obtained for testing, copper was used for optimization testing. Samples were exposed to various frequencies and currents of arcs during texturing. Emittances near the desired goal were achieved at frequencies less than 500 Hz. Arc current did not appear to play a major role under 15 amps. Particulate carbon was observed on the surface, and was easily removed by vibration and handling. In order to determine morphology adherence, ultrasonic cleaning was used to remove the loosely adherent material. This reduced the emittance significantly. Emittance was found to increase with increasing frequency for the cleaned samples up to 500 Hz. The highest emittance achieved on these samples over the temperature range of interest was 0.5 to 0.6, which is approximately a factor of 25 increase over the untextured copper emittance.
Rutledge, Sharon K.↗
Thin-Film Selective Emitter
Direct conversion of thermal energy into electrical energy using a photovoltaic cell is called thermophotovoltaic energy conversion. One way to make this an efficient process is to have the thermal energy source be an efficient selective emitter of radiation. The emission must be near the band-gap energy of the photovoltaic cell. One possible method to achieve an efficient selective emitter is the use of a thin film of rare-earth oxides. The determination of the efficiency of such an emitter requires analysis of the spectral emittance of the thin film including scattering and reflectance at the vacuum-film and film-substrate interfaces. Emitter efficiencies (power emitted in emission band/total emitted power) in the range 0.35-0.7 are predicted. There is an optimum optical depth to obtain maximum efficiency. High emitter efficiencies are attained only for low (less than 0.05) substrate emittance values, both with and without scattering. The low substrate emittance required for high efficiency limits the choice of substrate materials to highly reflective metals or high-transmission materials such as sapphire.
Chubb, Donald L.↗
Emittance Measurements at the Langley Chemical Physics Laboratory
Total hemispherical emittance measurements are made routinely for materials which may be heated by electrical resistance methods over the temperature range of 600 degrees to 2,000 F by using a black-body reference method. This employs a conical black body and a thermopile detector with a calcium fluoride lens. Emittance is obtained by measuring the radiant flux from the specimen strip and comparing it with the flux from an equal area of the black-body cone at the same temperature. The temperature measurements are made by use of thermocouples. It is planned to extend the temperature range of this type of measurement to temperatures above 2,000 F. Another technique has been investigated for measuring emittance of materials not amenable to electrical heating or thermocouple attachment. This method uses a black-body-cavity furnace similar to that used in reference 5 to measure emittance of transparent materials such as glass. The method employs a heated black-body cavity in which the semicircular specimen is allowed to come to the equilibrium temperature of the cavity and then is rotated in front of a water-cooled viewing port where a sensitive thermistor detector alternately views the specimen surface and the black-body cavity. The ratio of the two readings gives the specimen emittance directly, for the temperature of the black body. The detector output is recorded on a fast Brown self-balancing potentiometer. The furnace is provided with a water-cooled blackened shutter which may be inserted behind the specimen to eliminate any transmitted black-body radiation if the specimen is transparent. This apparatus is capable of measuring total normal emittance over the temperature range of 1,000 degrees to 2,000 F. Preliminary data for boron nitride specimens of two thicknesses are shown where total normal emittance is plotted against temperature for two experimental conditions: (1) black-body radiation incident on the back of the specimen and (2) no black-body radiation incident on the back of the specimen (that is, with a watercooled shutter behind the specimen). The data appear to indicate a slight transparency for the thin specimen and emittances of from 0.7 to 0.8 over the temperature range.
Lewis, B. W.↗
Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells
This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H 2 S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN x :H) layer. The sulfur passivation on a symmetrically n + diffused emitter is shown to lead to an emitter saturation current density (J 0n+ ) of 30 fA/cm 2 at R sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al 2 O 3 )/a-SiN x :H stack, showed a promising implied open-circuit voltage (iV OC ) of 686 mV before metallization. This iV OC was higher than that for the a-SiN x :H or SiO 2 /a-SiN x :H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ~20% and a V OC of ~650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760°C contact firing process degrades the S-passivation quality. Furthermore, the surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.
14 SOLAR ENERGY↗
Emittance preservation for the electron arm in a single PWFA-LC stage using quasi-adiabatic plasma density ramp matching sections
Plasma-based acceleration (PBA) is being considered for a next generation linear collider (LC). In some PBA-LC designs for the electron arm, the extreme beam parameters are expected to trigger background ion motion within the witness beam, which can lead to longitudinally varying nonlinear focusing forces and result in an unacceptable emittance growth of the beam. To mitigate this, we propose to use quasi-adiabatic plasma density ramps as matching sections at the entrance and exit of each stage. We match the witness electron beam to the low density plasma entrance, where the beam initially has a large matched spot size so the ion motion effects are relatively small. As the beam propagates in the plasma density upramp, it is quasi-adiabatically focused, and its distribution maintains a non-Gaussian equilibrium distribution in each longitudinal slice throughout the process, even when severe ion collapse has occurred. This only causes small amounts of slice emittance growth. The phase mixing between slices with different betatron frequencies leads to additional projected emittance growth within the acceleration stage. A density downramp at the exit of an acceleration section can eliminate much of the slice and projected emittance growth as the beam and ion motion adiabatically defocuses and decreases, respectively. Simulation results from QuickPIC with Azimuthal Decomposition show that within a single acceleration stage with a 25 GeV energy gain, this concept can limit the projected emittance growth to only ∼2% for a 25 GeV, 100 nm emittance witness beam and ∼20% for a 100 GeV, 100 nm normalized emittance witness beam. The trade-off between the adiabaticity of the plasma density ramp and the initial ion motion at the entrance for a given length of the plasma density ramp is also discussed.
Physics↗
Multipoint-BAX: a new approach for efficiently tuning particle accelerator emittance via virtual objectives
Abstract Although beam emittance is critical for the performance of high-brightness accelerators, optimization is often time limited as emittance calculations, commonly done via quadrupole scans, are typically slow. Such calculations are a type of multipoint query , i.e. each query requires multiple secondary measurements. Traditional black-box optimizers such as Bayesian optimization are slow and inefficient when dealing with such objectives as they must acquire the full series of measurements, but return only the emittance, with each query. We propose a new information-theoretic algorithm, Multipoint-BAX , for black-box optimization on multipoint queries, which queries and models individual beam-size measurements using techniques from Bayesian Algorithm Execution (BAX). Our method avoids the slow multipoint query on the accelerator by acquiring points through a virtual objective , i.e. calculating the emittance objective from a fast learned model rather than directly from the accelerator. We use Multipoint-BAX to minimize emittance at the Linac Coherent Light Source (LCLS) and the Facility for Advanced Accelerator Experimental Tests II (FACET-II). In simulation, our method is 20× faster and more robust to noise compared to existing methods. In live tests, it matched the hand-tuned emittance at FACET-II and achieved a 24% lower emittance than hand-tuning at LCLS. Our method represents a conceptual shift for optimizing multipoint queries, and we anticipate that it can be readily adapted to similar problems in particle accelerators and other scientific instruments.
43 PARTICLE ACCELERATORS↗