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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Magnetically aligned carbon nanoparticle composites have enhanced electrical properties. The composites comprise carbon nanoparticles, a host material, magnetically sensitive nanoparticles and a surfactant. In addition to enhanced electrical properties, the composites can have enhanced mechanical and thermal properties.
Lead-free piezoelectric ceramics of (1 − x)K0.5Na0.5NbO3-xCaTiO3 were fabricated, and their crystal structure, microstructure, and electrical properties were systematically studied. Rietveld refinement of the x-ray diffraction data and Raman spectroscopic analyses revealed a composition-dependent structural phase transition: three phase transitions, namely, from a pure orthorhombic phase for x ≤ 0.02 to a mixed phase of orthorhombic and tetragonal phases (0.03 ≤ x ≤ 0.08) and finally another mixed phase of tetragonal + cubic for x = 0.10 and 0.15 at room temperature (RT). The morphological study reveals a decrease in grain size along with a more uniform distribution of grains as the concentration of CaTiO3 (CT) increases; notably, a homogeneous distribution of grains is observed for x = 0.05. The temperature-dependent dielectric properties show two phase transitions, from orthorhombic to tetragonal (TO-T) and tetragonal to cubic (TC), for unmodified K0.5Na0.5NbO3 (KNN). However, both the phase transition temperatures (TO-T and TC) decrease, and the transition peaks broaden with an increase in CT substitution, and for x > 0.06, the TO-T shifted below RT. The broadening of the transition peak at TO-T may be due to the relaxation behavior. Among the prepared samples, the 5 mol. % CT-modified KNN shows the optimum electrical properties (d33 = 114 pC/N, ɛr = 412, and 2Pr = 15.25 μC/cm2) at RT. The enhanced electrical properties for x = 0.05 are due to the coexistence of orthorhombic and tetragonal phases, facilitating easy polarization rotation and flattening of the free energy profile. A phase diagram has been constructed based on the information gathered from the temperature-dependent dielectric measurements, RT x-ray diffraction, and Raman spectroscopy data and is discussed in detail.
Voided growth structures of sputter-deposited films affect strongly their optical and electrical properties. Vanadium dioxide is an interesting material to study effects of film microstructure and nonstoichiometry on electrical properties because its phase transition makes it possible to investigate electrical behavior both in a semiconducting phase and in a metallic phase. Vanadium oxide films were deposited with different vanadium oxygen ratios for substrate temperatures between 250 and 550 C by dc reactive magnetron sputtering. The resistivity ratios between a semiconducting phase and a metallic phase are limited to 1000 order by voided boundaries and oxygen vacancies. The voided boundaries are defined by columnar structure and agglomerated grain growth. The results emphasize the necessity of a combination of deposition to obtain the film with a favorable structure and postdeposition annealing to control the film stoichiometry.
The design evolution, hardware development, and production history of the surface electrical properties (SEP) experiment are discussed. The SEP transmitter and receiver were designed to be used on the lunar surface during the Apollo 17 mission. The equipment was used to measure lunar surface electrical properties over traverses totalling more than 8 kilometers, for a duration of more than 100 minutes. A comprehensive outline of the techniques, is given along with a simplified detailed breakdown of equipment description and function to outline the principles of operation. A history of the design evolution with trade-off criteria and emphasis on changes caused by decisions reached in solving problems inherent in a fast-paced development program are presented from the viewpoint of overall design concept and in detail for each item of deliverable hardware. There is a brief account of lunar operations.
Advanced power systems which generate, control, and distribute electrical power to many large loads are a requirement for future space exploration missions. The development of high temperature insulating materials and power components constitute a key element in systems which are lightweight, efficient, and are capable of surviving the hostile space environment. In previous work, experiments were carried out to evaluate film and ceramic capacitors for potential use in high temperature applications. The effects of thermal stressing, in air and without electrical bias, on the electrical properties of the capacitors as a function of thermal aging up to 12 weeks were determined. In this work, the combined effects of thermal aging and electrical stresses on the properties of teflon film and ceramic power capacitors were examined. The ceramic capacitors were thermally aged for 35 weeks and the teflon capacitors for 15 weeks at 200 C under full electrical bias and were characterized, on a weekly basis, in terms of their capacitance stability and electrical loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also obtained. The results obtained represent the influence that short-term thermal aging and electrical bias have on the electrical properties of the power capacitors characterized.
Electrical property measurements have been made on an Apollo 15 lunar soil sample in ultrahigh vacuum from room temperature to 827 C for the frequency spectrum from 100 Hz through 1 MHz. The dielectric constant, the total ac loss tangent, and the dc conductivity were measured. The dc conductivity showed no thermal hysteresis, but an irreversible (in vacuum) thermal effect was found in the dielectric loss tangent on heating above 700 C and during the subsequent cooling. This appears to be related to several effects associated with lunar glass above 700 C. The sample also showed characteristic low-frequency dispersion in the dielectric constant with increasing temperature, presumably due to Maxwell-Wagner intergranular effects. The dielectric properties may be fitted to a model involving a Cole-Cole frequency distribution that is relatively temperature-independent below 200 C and follows a Boltzmann temperature distribution with an activation energy of 2.5 eV above 200 C. The dc conductivity is fitted by an exponential temperature distribution and becomes the dominant loss above 700 C.
Radar instrumentation on Surveyor I spacecraft and use in determining electrical properties of lunar surface
When dispersed or mixed immiscibles are solidified on earth, a large amount of separation of the constituents takes place due to differences in densities. However, when the immiscibles are dispersed and solidified in zero-gravity, density separation does not occur, and unique composite solids can be formed with many new and promising electrical properties. By measuring the electrical resistivity and superconducting critical temperature, Tc, of zero-g processed Ga-Bi samples, it has been found that the electrical properties of such materials are entirely different from the basic constituents and the ground control samples. Our results indicate that space processed immiscible materials may form an entirely new class of electronic materials.
Nuclear radiation, cryogenic temperature, and vacuum effects on electrical properties of dielectric materials
Proton irradiation effects on electric properties and defect configurations of bismuth telluride
Thermal sterilization effects on mechanical and electrical properties of soldered and welded joints
High temperature electrical properties of insulators and compatibility with refractory metals
Analysis of ranging system for lunar surface electrical properties experiment
Evaporated tellurium thin films electric properties, discussing fabrication techniques, temperature dependence, field effect and Hall mobilities, threshold voltage and stability
The electrical properties of multi p-n junction devices are analyzed. It is found that this type of device possesses bistable characteristics similar to that of a Shockley diode and thus provides an alternative realization of devices for switching applications. The inherently greater current gains involved in the operations of such a device yield in principle higher breakover voltages and higher holding currents. Furthermore, the incorporation of heterostructures in this device introduces a new degree of freedom in tailoring their switching characteristics. Multi p-n heterojunction devices operating as SCR lasers were fabricated, and the experimental results are presented.
The addition of graphene has recently shown promise as a route for the significant improvement of the bulk electrical properties of metallic materials. Here, we explore the effects these additions have on the net electrical conductivity of fabricated copper-graphene (Cu-Gr) nanocomposites as a function of grain structure and grain boundary properties. Synthetic 3D microstructures were generated to represent polycrystalline copper with different average grain diameters and twinned grain boundary fractions. Then, the Poisson equation of electrical transport was solved using a finite difference method in order to predict the net electrical conductivity of each microstructure. In this context, the potential effect of graphene on the conductivity of the composite was evaluated as a function of the number of affected grain boundaries. The results of these calculations indicate that 1.) as supported by literature, net electrical conductivity decreases with decreasing grain size, 2.) the presence of twinned grain boundaries results in smaller loss of conductivity than would otherwise be expected, and 3.) the presence of graphene on the grain boundaries can be expected to lead to improvements in net electrical conductivity. However, we also find that 4.) when the Cu grain structure becomes sufficiently refined, the addition of graphene could conceivably result in significant improvements in electrical conductivity over and above coarse-grained Cu. It is estimated from our calculations that, assuming microstructures with average grain sizes between 100 nm and 100 μm and graphene conductivity 1000 to 10,000 that of a typical Cu grain boundary, an improvement in electrical conductivity of approximately 17% over that of bulk Cu may be attainable. Therefore, by performing this study we suggest a possible route for the improvement of Cu electrical properties through the addition of graphene.
Calibration data for thermal and electrical property variations in thin film resistance thermometer gages
This technical memorandum presents the data and results from a series of tests performed on AVCOAT, charred AVCOAT, and different Shuttle Thermal Protection System (TPS) tile coatings to determine their electrical properties as a function of temperature and frequency. Initially, the samples were assumed to be insulators and the complex permittivities were measured from data collected by sandwiching each sample between two conductors to form a sandwich. However, the AVCOAT sample data showed that the material becomes conductive as it begins to char. To get an accurate conductivity reading on these charred samples, a four-point resistance probe was used to collect data. Overall, this testing showed that the virgin AVCOAT starts out as a material that is a good insulator but transitions to one with a conductivity on the order of 1860 S/m as it chars. The deeper layers of AVCOAT (un-charred) all exhibited a temperature and frequency dependence that is possibly indicative of a dielectric relaxation in the material. As the sample temperatures were increased, a knee appears in the real permittivity data sets below 1 kHz. Both the real permittivity and resistivity drop up to several orders of magnitude yet show that the material remains an insulator. The Shuttle High Temperature Reusable Surface Insulation (HRSI) tile coatings studied included Reac- tion Cured Glass (RCG), Aluminum Enhanced Thermal Barrier (AETB), and Toughened Unipiece Fibrous Insulation (TUFI). The purely glass fiber parts of the tile were removed leaving only the outer layers con- taining just the coating. The data collected shows that the RCG, AETB, and outermost layer of the TUFI have similar electrical properties. The real permittivity plots show that there appears to be a relaxation that shows up at frequencies below 1 kHz. The relaxation frequency increases with increasing temperature. Also, the real permittivity increases up to about a factor of four between room temperature and 650K. Likewise, the resistivity (related to the imaginary permittivity) decreases up to five orders of magnitude over the same temperature interval, but still remains an insulator. This data was collected to support a NASA Engineering and Safety Center (NESC) assessment team investigating the source of thermocouple anomalies in both Shuttle TPS material and AVCOAT used for on the Orion spacecraft for Exploration Flight Test 1 (EFT-1). The details of their findings will be documented in a separate report with this document serving as a reference.