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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Characterizing peak electricity demand for U.S. households: an assessment of end-use loads and demand factors

Understanding household peak electricity demand is critical to evaluate the technical need for electrical infrastructure upgrades. This study characterizes peak loads for existing and new equipment using metered data from a convenience sample of 11,940 U.S. dwellings from four sources, including 911 from two sources with end-use metering. After standardized data cleaning and labeling, we derived descriptive statistics for key metrics, such as maximum demand and demand factors, and developed predictive models relating 60- to 15-min demand for the National Electrical Code (NEC). Mean 15-min maximum demand was 9.7 kW (median 9.0 kW; IQR 7.0–11.5 kW, 95% CI 9.6–9.8 kW), indicating spare capacity in 98% of homes with hypothetical 100 A panels. Maximum demand increased with floor area and number of high-demand loads. Dwelling maximum demand was driven by higher-power, longer-duration heating appliances and vehicle charging, while most user-operated appliances contributed little. Demand factors are used to account for how most devices contribute less than their rated power to maximum demand. Existing load mean demand factors (28%; median 10%; IQR 0–58%; CI 28–29%) were higher than those for new loads (21%; median 7%; IQR 0–35%; CI 20–21%), because new loads changed the timing and magnitude of maximum demand. New high-demand loads had higher than average demand factors (40–60%). Whole dwelling demand factors support the NEC's 40% assumption, but they challenge its conservative 100% treatment of new HVAC. We propose a data-driven 50% demand factor for new equipment, which would align with metered data, improve affordability, and modernize electrical codes.

Appliances↗
DOE OSTI2023

Microstructure characterization of electric field assisted sintering (EFAS) sintered metallic and ceramic materials using local thermal diffusivity measurement

Electric Field Assisted Sintering (EFAS, also referred to as spark plasma sintering) is a powerful technology for the consolidation of powder materials. The high heating rate during the sintering process is critical for minimizing energy consumption, but it can also cause microstructure heterogeneities in sintered parts, such as spatially varied porosity. The examination of localized porosity usually requires the use of a scanning electron microscope with a carefully prepared surface. In this paper, photothermal radiometry is used to measure local thermal diffusivity and extract localized porosity of EFAS-sintered parts by using a percolation-threshold model. Applying this approach, we identified the radial position-dependent porosity variation in EFAS parts, which is likely formed due to the large temperature gradient during the sintering process. This approach has a unique advantage because it can measure samples with minimal or no surface preparation, enabling the possibility of in situ characterization in EFAS with proper system modification. Necessary modifications on the measurement approach for EFAS deployment and in situ characterization are also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Linear viscoelastic characterization of electrically conductive adhesives used as interconnect in photovoltaic modules

Electrically conductive adhesives (ECAs) are incorporated into recent designs of photovoltaic (PV) modules and replace the traditional metallic solders as interconnects. This transition depicts a significant material change, and a proper understanding of the interconnects' mechanical response has not yet been established. However, such an understanding is necessary to (a) identify the driving forces for module degradation and failure, (b) allow for module design optimization, and (c) enable accurate lifetime predictions. This study summarizes the framework for the mechanical materials characterization and modeling of ECAs for PV applications. Only high-fidelity material models are able to capture the rate and temperature dependency of the ECA interconnect and allow for accurate modeling of the materials response. Furthermore, a linear viscoelastic representation is found to describe the mechanical response of the ECAs sufficiently well. The effects of curing conditions and environmental exposure are investigated, and material models for a variety of ECAs are reported and prepared for the use in numerical simulations. Overall, a finite element simulation of a generic submodel of a shingled cell module is used to highlight the need for high-fidelity material models and demonstrates the error made in the predicted stress states by using less sophisticated models.

14 SOLAR ENERGY↗
DOE OSTI2020

In Situ Structural and Electrical Conductivity Characterization of Sr2MMoO6-δ Double Perovskite Solid Oxide Fuel Cell Anode Materials

In this study, a series of Sr 2 MMoO 6-δ double perovskite solid oxide fuel cell (SOFC) anode materials (where 0 <= δ <= 0.041 and M = Fe, Co, or Ni) were synthesized, and the changes in their morphologies under relevant SOFC operating conditions were explored. Ultra-small-angle X-ray scattering (USAXS), small-angle X-ray scattering (SAXS), and wide-angle X-ray scattering (WAXS) were used to determine changes in the microstructures and phase compositions of the anode materials at high temperatures and under a reducing atmosphere. The stability of the double perovskite structure was found to be highly dependent on the identity of the cation M, such that when M = Fe, the material remained stable over the course of the experiments. However, when M = Co or Ni, significant changes in the microstructure and phase composition were observed. An in situ study of the M = Co sample, in which electrical conductivity and USAXS/SAXS/WAXS measurements were conducted simultaneously, revealed the structural degradation mechanisms and electrical conductivity changes over a range of temperatures. To conduct these measurements, a cell was developed that allowed for a sample mounted on Pt wires to be placed in the X-ray beam and heated under gas flow comprising 4% mass H 2 and 96% mass N 2 . The resulting measurements allowed for the direct comparison of the electrical and morphological changes occurring in the material under operating conditions, such that increases in conductivity could be attributed to the growth of new phases.

25 ENERGY STORAGE↗
DOE OSTI2024

Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

β ‐Ga 2 O 3 ‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p ‐NiO/n‐ β ‐Ga 2 O 3 diodes fabrication and optimization for high‐temperature device applications are reported, demonstrating a current rectification ratio ( I ON / I OFF ) of more than 10 6 at 410 °C. The NiO heterojunction diode can achieve higher turn‐on ( V ON ) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single‐crystal β ‐Ga 2 O 3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p–n diodes based on β ‐Ga 2 O 3 can significantly improve high‐temperature electronic device and sensor performance.

Sohel, Shahadat H.↗
DOE OSTI2021

Bedrock architecture, soil texture, and hyporheic zone characterization combining electrical resistivity and induced polarization imaging

The shallow (<15 m depth) subsurface environment of a short reach along a bedrock stream was investigated with electrical resistivity and induced polarization (IP) to map details of bedrock and soil sediments. The bedrock is mostly comprised of limestone, and is generally resistive compared to the overlying soil. The soil-bedrock interface was determined through a trial and error approach using a sharp boundary feature in the inversion model. The inferred bedrock surface determined from the inversions exhibited undulating patterns with troughs and ridges. A near continuous trough ran alongside the stream within the floodplain, and is suggestive of a paleochannel among other interpretations of this feature. The structure of the electrical resistivity above the bedrock showed small-scale elongated features. The chargeability from the IP method showed larger scale features. High values of chargeability were associated with the sediments in the floodplain, and low values were associated with bedrock, stream, and soil on the elevated banks above the stream. If the chargeability is associated with membrane polarization characteristic of clayey soils, then IP seems to highlight the mere existence of clay, while the resistivity may be more discernable of the relative proportion of clay. Vegetation differences may also explain the chargeability distribution, where parts of the survey with high chargeability had dense pine with no understory making the soils more organically rich.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2020

A parametric analysis of oilfield design factors affecting the detectability and characterization of electrically conductive hydrofracks

Electrical responses in the vicinity of energized steel-cased well sources offer significant potential for monitoring induced fractures. However, the high complexity of well-fracture-host models spanning multiple length scales compels analysts to simplify their numerical models due to enormous computational costs. This consequently limits our understanding regarding monitoring capabilities and the limitations of electrical measurements on realistic hydraulically fracturing systems. In this paper, we use the hierarchical finite element approach to construct geoelectric models in which geometrically complex fractures and steel-cased wells are discretely represented in 3D conducting media without sacrificing the model realism and computation efficiency. We have discovered systematic numerical analyses of the electrical responses to evaluate the influences of borehole material conductivity and the source type as well as the effects of well geometry, conductivity contrast, source location, fracture growth, and fracture propagation. Furthermore, the numerical results indicate that the borehole material property has a strong control on the electrical potentials along the production and monitoring wells. The monopole source located at a steel-cased well results in a current density distribution that decays away from the source location throughout the well length, whereas the dipole source produces a current density that dominates mainly along the dipole length. Moreover, the conductivity contrast between the fractures and host does not change the overall pattern of the electrical potentials but varies its amplitude. The fracture models near different well systems indicate that the well geometry controls the entire distribution of potentials, while the characteristics of the voltage difference profiles along the wells before and after fracturing are insensitive to the well geometry and the well in which the source is located. Further, the hydraulic-fracturing models indicate that the voltage differences along the production well before and after fracturing have strong sensitivity to fracture growth and fracture set propagation.

58 GEOSCIENCES↗
DOE OSTI2020

Generic characterization of electrical test benches for AC- and HVDC-connected wind power plants

The electrical test and assessment of wind turbines go hand in hand with standards and network connection requirements. In this paper, the generic structure of advanced electrical test benches, including grid emulator or controllable grid interface, wind torque emulator, and device under test, is proposed to harmonize state-of-the-art test sites. On the other hand, modern wind turbines are under development towards new features, concerning grid-forming, black-start, and frequency support capabilities as well as harmonic stability and control interaction considerations, to secure the robustness and stability of renewable-energy-based power systems. Therefore, it is necessary to develop new and revised test standards and methodologies to address the new features of wind turbines. This paper proposes a generic test structure within two main groups, including open-loop and closed-loop tests. The open-loop tests include the IEC 61400-21-1 standard tests as well as the additional proposed test options for the new capabilities of wind turbines, which replicate grid connection compliance tests using open-loop references for the grid emulator. In addition, the closed-loop tests evaluate the device under test as part of a virtual wind power plant and perform real-time simulations considering the grid dynamics. The closed-loop tests concern grid connection topologies consisting of AC and HVDC, as well as different electrical characteristics, including impedance, short-circuit ratio, inertia, and background harmonics. The proposed tests can be implemented using available advanced test benches by adjusting their control systems. The characteristics of a real power system can be emulated by a grid emulator coupled with real-time digital simulator systems through a high-bandwidth power-hardware-in-the-loop interface.

17 WIND ENERGY↗
DOE OSTI2020

Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Most electrical characterization of radiation damage to semiconductors is conducted on full devices or on low‐doped material. However, evaluating the radiation hardness is challenging in less mature semiconductor systems where low‐doped material is unavailable and full devices are difficult to realize. Herein, temperature‐dependent Hall effect measurements are used to demonstrate α particle‐induced radiation effects in p‐type 4H‐SiC with a room temperature hole concentration of . The 4H‐SiC is irradiated by α particles from a 210 Po source over a fluence of –. Modeling the hole concentration as a function of temperature shows that α radiation causes hole compensation through the introduction of hole traps. The radiation also induces a reduction in hole mobility due to an increase in defect‐related scattering centers. At low temperatures and increasingly higher fluences, the conduction mechanism changes from band conduction to another mechanism.

Frye, Clint D.↗
DOE OSTI2021

Low barrier height in a ZnO nanorods/NbSe 2 heterostructure prepared by van der Waals epitaxy

Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact behavior. In this study, we revealed that charge transfer across a 2D/semiconductor heterointerface and materials characteristics besides work function should be accounted for in fabrication of electrodes based on 2D materials. Our density functional theory (DFT) calculations predicted that charge transfer between ZnO and NbSe 2 lowers the barrier height at the heterojunction and that conductive surface states of ZnO provide an additional conduction channel in the ZnO/NbSe 2 heterostructures. Crystalline ZnO/NbSe 2 heterostructures were prepared by the hydrothermal method. Electrical characterizations of the ZnO/NbSe 2 heterostructures showed Ohmic-like behavior as predicted by the DFT calculations, opposed to the prediction based on the Schottky–Mott model.

2D materials↗
DOE OSTI2024

Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Wafer-Scale Synthesis of 2D Materials by an Amorphous Phase-Mediated Crystallization Approach

The interest in the wafer-scale growth of two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs), has been rising for transitioning from lab-scale devices to commercial-scale systems. Among various synthesis techniques, physical vapor deposition, such as pulsed laser deposition (PLD), has shown promise for the wafer-scale growth of 2D materials. However, due to the high volatility of chalcogen atoms (e.g., S and Se), films deposited by PLD usually suffer from a lack of stoichiometry and chalcogen deficiency. To mitigate this issue, excess chalcogen is necessary during the deposition, which results in problems like uniformity or not being repeatable. This study demonstrates a condensed-phase or amorphous phase-mediated crystallization (APMC) approach for the wafer-scale synthesis of 2D materials. This method uses a room-temperature PLD process for the deposition and formation of amorphous precursors with controlled thicknesses, followed by a post-deposition crystallization process to convert the amorphous materials to crystalline structures. This approach maintains the stoichiometry of the deposited materials throughout the deposition and crystallization process and enables the large-scale synthesis of crystalline 2D materials (e.g., MoS 2 and WSe 2 ) on Si/SiO 2 substrates, which is critical for future wafer-scale electronics. We show that the thickness of the layers can be digitally controlled by the number of laser pulses during the PLD phase. Optical spectroscopy is used to monitor the crystallization dynamics of amorphous layers as a function of annealing temperature. The crystalline quality, domain sizes, and the number of layers were explored using nanoscale and atomistic characterization (e.g., AFM, STEM, and EDS) along with electrical characterization to explore process–structure–performance relationships. Finally, this growth technique is a promising method that could potentially be adopted in conventional semiconductor industries for wafer-scale manufacturing of next-generation electronic and optoelectronic devices.

2D electronics↗
DOE OSTI2022

Detection of high energy ionizing radiation using deeply depleted graphene–oxide–semiconductor junctions

Graphene’s linear band structure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene–oxide–semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of a silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12 to 1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.

Ruiz, Isaac↗
DOE OSTI2020

Characterization and Analysis of Insulated Metal Substrate-Based SiC Power Module for Traction Application

This paper presents the electrical characterization and drive cycle--based thermal analysis of an insulated metal substrate (IMS)--based silicon carbide power module for high-power traction inverters. The substrate was constructed using a thin layer of polymer--ceramic blend dielectric material with a thick copper core to improve transient thermal performance. The cooling performance of this module has already been validated with promising results. In this paper, an experimental test bed was set up to evaluate the dynamic and static electrical performance of the designed module under a wide range of operating conditions. The characterization results were then used to develop a drive cycle--based thermal model to validate the performance compared to the traditional direct bonded copper--based power module. The results indicate that the IMS-based power module is a suitable solution for high-power traction applications.

Chowdhury, Shajjad↗
DOE OSTI2022

Probing the Contribution of Lateral Pathways to Out–of–Plane Charge Transport in Organic Bulk Heterojunctions

The nanoscale interpenetrating electron donor–acceptor network in organic bulk heterojunction (BHJ) solar cells results in efficient charge photogeneration but creates complex 3D pathways for charge transport. At present, little is known about the extent to which out-of-plane charge flow relies on lateral electrical connectivity. In this work, a procedure, based on conductive atomic force microscopy, is introduced to quantify lateral current spreading during out-of-plane charge transport. Using the developed approach, the dependence of lateral spreading on BHJ phase separation, composition, and molecule type (small molecule vs polymer) is studied. In the small-molecule BHJ, 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophen]-5-yl)benzo[c]-[1,2,5]thiadiazole):(6,6)-Phenyl-C 71 -butyric acid methyl ester (p-DTS(FBTTh 2 ) 2 :PC 71 BM), an increase is observed in lateral hole current spreading as the population of donor crystallites, bearing an edge-on molecular orientation, is increased. When integrated into BHJs, the polymer donor poly(3-hexylthiophene-2,5-diyl) (P3HT) leads to greater lateral hole current spreading and more spatially uniform charge transport than the small-molecule donor, owing to in-plane charge transport along the polymer backbone. Finally, through the newly introduced electrical characterization scheme, these experiments bring to light the role of lateral electrical connectivity in assisting charge navigation across BHJs.

14 SOLAR ENERGY↗
DOE OSTI2023

Pinhole electrical conductivity in polycrystalline Si on locally etched SiN$_y$/SiO$_x$ passivating contacts for Si solar cells

State-of-the-art monocrystalline Si (c-Si) solar cells require passivating contacts to achieve a high degree of charge-carrier separation and collection. In this work, we focus on boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts. In PLENO contacts, excellent surface passivation is provided by the ~10 nm dielectric bilayer, while pinholes in the dielectric bilayer, that are filled with doped polycrystalline Si, provide charge-carrier selectivity and transport. During PLENO fabrication, etch undercut in the dielectric bilayer occurs. Here, using electrical characterization and microscopies, we show that undercut causes pinholes to be electrically resistive in PLENO. A processing sequence that eliminates the undercut in the final PLENO structure results in electrically conductive pinholes with low contact resistivity.

14 SOLAR ENERGY↗