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All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Three-Dimensional Stress Fields and Slip Systems for Single Crystal Superalloy Notched Specimens

Single crystal superalloys have become increasingly popular for turbine blade and vane applications due to their high strength, and creep and fatigue resistance at elevated temperatures. The crystallographic orientation of a single crystal material greatly affects its material properties, including elastic modulus, shear modulus, and ductility. These directional properties, along with the type of loading and temperature, dictate an anisotropic response in the yield strength, creep resistance, creep rupture ductility, fatigue resistance, etc. A significant amount of research has been conducted to determine the material properties in the <001> orientation, yet the material properties deviating from the <001> orientation have not been assessed for all cases. Based on the desired application and design criteria, a crystal orientation is selected to yield the maximum properties. Currently, single crystal manufacturing is able to control the primary crystallographic orientation within 15 of the target orientation, which is an acceptable deviation to meet both performance and cost guidelines; the secondary orientation is rarely specified. A common experiment is the standard load-controlled tensile test, in which specimens with different orientations can be loaded to observe the material response. The deformation behavior of single-crystal materials under tension and compression is known to be a function of not only material orientation, but also of varying microdeformation (i.e. dislocation) mechanisms. The underlying dislocation motion causes deformation via slip, and affects the activation of specific slip systems based on load and orientation. The slip can be analyzed by observing the visible traces left on the surface of the specimen from the slip activity within the single crystal material. The goal of this thesis was to predict the slip systems activated in three-dimensional stress fields of a notched tensile specimen, as a function of crystal orientation, using finite element analysis without addressing microstructural deformation mechanisms that govern their activation. Out of three orientations tested, the specimen with a [110] load orientation and a [001] growth direction had the lowest maximum resolved shear stress; this specimen orientation appears to be the best design candidate for a tensile application.

Magnan, Shannon M.↗
NASA NTRS2002

Glennan Microsystems Initiative

During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interfaces in order to identify their electronic properties as a function of surface preparation. The overall aim of this work is to optimize the electronic properties of metal contacts to SiC as well as the active SiC material itself as a function of surface preparation and subsequent processing. Initially, this work has involved identifying bare surface, subsurface, and metal induced gap states at the metal-SiC contact and correlating energies and densities of deep levels with Schottky barrier heights. We used low energy electron-excited nanoluminescence (LEEN) spectroscopy, X-ray photoemission spectroscopy (XPS), and Secondary Ion Mass Spectrometry (SIMS) in order to correlate electronic states and energy bands with chemical composition, bonding, and crystal structure. A major development has been the discovery of polytype transformations that occur in 4H-SiC under standard microelectronic process conditions used to fabricate SiC devices. Our results are consistent with the stacking fault generation, defect formation, and consequent degradation of SiC recently reported for state-of-the-art ABB commercial diodes under localized electrical stress. Our results highlight the importance of -optimizing process conditions and material properties - anneal times, temperatures and doping to control such structural changes within epitaxial SiC layers. Thus far, we have established threshold times and temperatures beyond which 4H-SiC exhibits 3C-SiC transformation bands for a subset of dopant concentrations and process conditions. On the basis of this temperature time behavior, we have been able to establish an activation energy of approximately 2.5 eV for polytype transformation and dislocation motion. Work continues to establish the fundamental mechanisms underlying the polytype changes and its dependence on material parameters.

Brillson, Leonard J.↗
NASA NTRS2007

Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C-SiC and 2H-AlN/GaN heteroepilayers grown on top of 4H-SiC mesas. For both 3C-SiC and AlN/GaN films nucleated on 4H-SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H-SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H-SiC bipolar diodes has been completely absent from our initial studies of 3C-SiC diodes, including diodes implemented on defective 3C-SiC heterolayers grown on stepped 4H-SiC mesas.

Neudeck, P. G.↗
NASA NTRS2017

Grain Size-Dependent Crystal Plasticity Constitutive Model for Polycrystal Materials

A new method to introduce grain size-dependence in classical crystal plasticity constitutive model is developed by considering the resistance to dislocation motion in the grain boundary influence region as equivalent to that of a work hardening. A general framework for the size-dependent constitutive model is derived by implementing this method on a core and mantle model. The work hardening, equivalent to grain boundary effect, is realized by introducing a fictitious, pre-existing, plastic strain grain boundary influence region (mantle) following the principles of classical crystal plasticity. This fictitious plastic strain, in effect, increases the yield strength and decreases the initial hardening coefficient of the grain. With the thickness of grain boundary influence region and the distribution of introduced plastic strain remaining the same, the grain boundary effect increased as the grain size becomes smaller. A simplified model that considers the grain boundary effect on a grain average sense is also developed under this general framework. Implementation of this general framework to the specific cases of crystal plasticity constitutive models is demonstrated by considering the case of power law flow rule and hyperbolic-secant hardening rule. Finally, the grain size-dependent constitutive model is validated by comparing the predicted stress-strain behavior of polycrystal samples with different average grain sizes under uniaxial loading with the experimental results.

Grain Size↗
NASA NTRS1989

Mean stress and the exhaustion of fatigue-damage resistance

Mean-stress effects on fatigue life are critical in isothermal and thermomechanically loaded materials and composites. Unfortunately, existing mean-stress life-prediction methods do not incorporate physical fatigue damage mechanisms. An objective is to examine the relation between mean-stress induced damage (as measured by acoustic emission) and existing life-prediction methods. Acoustic emission instrumentation has indicated that, as with static yielding, fatigue damage results from dislocation buildup and motion until dislocation saturation is reached, after which void formation and coalescence predominate. Correlation of damage processes with similar mechanisms under monotonic loading led to a reinterpretation of Goodman diagrams for 40 alloys and a modification of Morrow's formulation for life prediction under mean stresses. Further testing, using acoustic emission to monitor dislocation dynamics, can generate data for developing a more general model for fatigue under mean stress.

Berkovits, Avraham↗
NASA NTRS1986

Fatigue crack propagation rate model based on a dislocation mechanism

It has been noted that the crack propagation exponent p for most metals usually varies between values of 2 and 4, and that the motion of dislocations plays an important part in determining the exponent p. Attention is presently given to the significance of the exponent p in terms of the motion of dislocations, in view of the theory of thermally activated plastic flow and the cumulative plastic strain concept for a failure criterion.

Mazumdar, P. K.↗
NASA NTRS1977

Computer simulation of the motion of a straight dislocation line in concentrated solid solutions. II

An investigation was undertaken to determine if the size and modulus interaction of a solute atom with a screw dislocation and the modulus interaction with an edge dislocation contributed to strengthening, in addition to the size interaction with an edge dislocation. The results indicate that the size interaction between solute atom and an edge dislocation accounts for most of the solid solution strengthening in f.c.c. alloys. The contribution to the yield stress from the modulus interaction with an edge dislocation is less than 15%. The interaction between a solute atom and a screw dislocation is much less than that between a solute atom and an edge dislocation.

Kuo, C. T. K.↗
NASA NTRS1976

Plastic deformation of polycrystalline zirconium carbide

The compressive yield strength of arc-melted polycrystalline zirconium carbide has been found to vary from 77 kg per sq mm at 1200 C to 19 kg per sq mm at 1800 C. Yield drops were observed with plastic strain-rates greater than 0.003/sec but not with slower strain rates. Strain-rate change experiments yielded values for the strain-rate sensitivity parameter m which range from 6.5 at 1500 C to 3.8 at 1800 C, and the product dislocation velocity stress exponent times T was found to decrease linearly with increasing temperature. The deformation rate results are consistent with the Kelly-Rowcliffe model in which the diffusion of carbon assists the motion of dislocations.

Darolia, R.↗
NASA NTRS1992

Variation of seismic slip in the Gulf of California and the possible effect on geodetic measurements of Pacific-North American plate motion

A simple dislocation model is used to evaluate the variation of seismic slip in the Gulf of California and the possible effect on geodetic measurements of Pacific-North American plate motion by means of an estimation of the surface displacements due to typical transform events in the gulf. The results of this numerical calculation suggest that if a large transform event (about 1.5 x 10 exp 26 dyne cm) were to occur within 100 to 200 km of a geodetic baseline, the relative distance measurements could be affected by up to 15 mm. This is marginally at the error level of a few millimeters plus 2 parts in 10 exp 8 of baseline length for GOMEX measurements, which thus are sensitive only to the far-field displacement along the plate boundary.

Tajima, Fumiko↗
NASA NTRS2002

Tensile Creep of Polycrystalline Near-Stoichiometric NiAl

Long term tensile creep studies were conducted on binary NiAl in the temperature range 700-1200 K with the objectives of characterizing and understanding the creep mechanisms. Inverse and normal primary creep curves were observed depending on stress and temperature. It was concluded that the creep of NiAl is limited by dislocation mobility. The stress exponent for creep, n, increased from 5.5 at 1200 K to 13.9 at 700 K. The true activation energy for creep, Qc, was constant and equal to about 400 kJ per mole between 20 and 50 MPa but decreased to a constant value of 250 kJ per mole between 50 and 110 MPa. The activation energy was observed to be stress dependent above 110 MPa. The tensile creep results reported in this investigation were compared with compression creep data reported in the literature. A detailed discussion of the probable dislocation creep mechanisms governing compressive and tensile creep of NiAl is presented. It is concluded that the non-conservative motion of jogs on screw dislocations influenced the nature of the primary creep curves, where the climb of these jogs involves either the next nearest neighbor or the six-jump cycle vacancy diffusion mechanism. The probable nature of the atom vacancy exchange that occur within the core of an edge dislocation undergoing climb in NiAl are schematically examined.

Raj, Sai V.↗
NASA NTRS2005

Compression and Tensile Creep of Binary NiAl

Compression creep and long term tensile creep studies were conducted on cast and extruded binary NiAl in the temperature range 700-1200 K with the objectives of characterizing and understanding the creep mechanisms. Inverse and normal primary creep curves were observed in both compression and tension creep depending on stress and temperature although an asymmetrical response was observed under these two stress states. It was concluded that the primary creep of NiAl is limited by dislocation mobility. The stress exponents, n, for compression and tensile creep were similar varying between about 5 and 14. However, there were significant differences in the stress dependence of the activation energies for compression and tensile creep. The true activation energy for tensile creep, Q(sub c), was constant and equal to about 400 kJ/mol between 20 and 50 MPa but decreased to a constant value of 250 kJ/mol between 50 and 110 MPa. The activation energy was observed to be inversely stress dependent above 110 MPa. In contrast, Q(sub c) = 300 kJ/mol for compression creep was constant between 25 and 70 MPa and inversely dependent on the true stress above 70 MPa. A detailed discussion of the probable dislocation creep mechanisms governing compressive and tensile creep of NiAl is presented. It is concluded that the non-conservative motion of jogs on screw dislocations influenced the nature of the primary creep curves, where the climb of these jogs involves either the next nearest neighbor or the six-jump cycle vacancy diffusion mechanism. The probable natures of the atom-vacancy exchange that occur within the core of an edge dislocation undergoing climb in NiAl are schematically examined.

Raj, Sai V.↗
NASA NTRS1989

Apparent activation volume for creep of copper and alpha brass at intermediate temperatures

Experimental measurements of the apparent activation volume for creep, V-asterisk, of Cu and Cu-30 pct Zn conducted at intermediate temperatures showed two types of strain dependencies. At the lower temperatures and higher stresses, V-asterisk decreased with increasing creep strain, while at higher temperatures and lower stresses, V-asterisk was essentially independent of strain. The low temperature-high stress behavior for Cu and Cu-30 pct Zn was found to be consistent with the dominance of a dislocation intersection mechanism. The high temperature-low stress data for the pure metals suggest that the rate-controlling process involves the nonconservative motion of jogs on screw dislocations. For the latter conditions, an additional contribution from solute drag-limited dislocation glide also appears to be important in governing the creep behavior of the alloy.

Raj, S. V.↗
NASA NTRS1974

Internal friction measurement in high purity tungsten single crystal

Internal friction peaks observed after small deformation in high purity tungsten single crystals between liquid helium temperature and 800 K in the frequency range 30-50 KHz, are studied as a function of orientation. An orientation effect is observed in the internal friction spectra due to the creation of internal stresses. The elementary processes related to these peaks are discussed in terms of kink generation and geometric kink motion on screw and edge dislocations in an internal stress field.

Rieu, G. E.↗
NASA NTRS1977

Influence of adsorbed fluids on the rolling contact deformation of MgO single crystals

Basic phenomena associated with rolling contact deformation were studied using MgO as a model bearing material. A hardened steel ball was rolled on MgO single crystals in slow-speed reciprocating motion and in high-speed circular motion. The resulting deformation was studied by dislocation etch-pit techniques. The presence of adsorbed fluids, such as silicone oil, white mineral oil, and toluene, with slow-speed sliding caused a dramatic change in slip mode and premature surface spalling compared with similar experiments in air or under water. In contrast, dimethyl formamide inhibited these slip processes. The results are consistent with the dependence of dislocation mobility on adsorbed species. High-speed hydrodynamic rolling with mineral oil lubrication produced a different slip phenomena entirely from the slow-speed rolling. The slip bands resembled those produced in tensile tests, and all slip apparently initiated at subsurface sites.

Dufrane, K. F.↗
NASA NTRS1985

Dislocation model for aseismic fault slip in the transverse ranges of Southern California

Geodetic data at a plate boundary can reveal the pattern of subsurface displacements that accompany plate motion. These displacements are modelled as the sum of rigid block motion and the elastic effects of frictional interaction between blocks. The frictional interactions are represented by uniform dislocation on each of several rectangular fault patches. The block velocities and fault parameters are then estimated from geodetic data. Bayesian inversion procedure employs prior estimates based on geological and seismological data. The method is applied to the Transverse Ranges, using prior geological and seismological data and geodetic data from the USGS trilateration networks. Geodetic data imply a displacement rate of about 20 mm/yr across the San Andreas Fault, while the geologic estimates exceed 30 mm/yr. The prior model and the final estimates both imply about 10 mm/yr crustal shortening normal to the trend of the San Andreas Fault. Aseismic fault motion is a major contributor to plate motion. The geodetic data can help to identify faults that are suffering rapid stress accumulation; in the Transverse Ranges those faults are the San Andreas and the Santa Susana.

Cheng, A.↗
NASA NTRS1999

Co-Seismic Mass Dislocation and Its Effect on Earth's Rotation and Gravity

Mantle processes often involve large-scale mass transport, ranging from mantle convection, tectonic motions, glacial isostatic adjustment, to tides, atmospheric and oceanic loadings, volcanism and seismicity. On very short time scale of less than an hour, co-seismic event, apart from the "shaking" that is the earthquake, leaves behind permanent (step-function-like) dislocations in the crust and mantle. This redistribution of mass changes the Earth's inertia tensor (and hence Earth's rotation in both length-of-day and polar motion), and the gravity field (in terms of spherical harmonic Stokes coefficients). The question is whether these effects are large enough to be of any significance. In this paper we report updated calculation results. The calculation uses the normal mode summation scheme, applied to 15,814 major earthquakes that occurred during 1976-1998, according to source mechanism solutions given by the Harvard Central Moment Tensor catalog. Compared to the truly large ones earlier in the century, the earthquakes we study are individually all too small to have left any discernible signature in geodetic records of Earth rotation or global gravity field. However, their collective effects continue to exhibit an extremely strong statistical tendencies. For example, earthquakes conspire to decrease J(sub 2) and J(sub 22) while shortening LOD, resulting in a rounder and more compact Earth. Strong tendency is also seen in the earthquakes trying to "nudge" the Earth rotation pole towards about 140 degree E, roughly opposite to the observed polar drift direction. The geophysical significance and implications will be further studied.

Chao, Benjamin F.↗
NASA NTRS2002

Co-Seismic Mass Dislocation and its Effect on Earth's Rotation and Gravity

Mantle processes often involve large-scale mass transport, ranging from mantle convection, tectonic motions, glacial isostatic adjustment, to tides, atmospheric and oceanic loadings, volcanism and seismicity. On very short time scale of less than an hour, co-seismic event, apart from the shaking that is the earthquake, leaves behind permanent (step-function-like) dislocations in the crust and mantle. This redistribution of mass changes the Earth's inertia tensor (and hence Earth's rotation in both length-of-day and polar motion), and the gravity field (in terms of spherical harmonic Stokes coefficients). The question is whether these effects are large enough to be of any significance. In this paper we report updated calculation results based on Chao & Gross (1987). The calculation uses the normal mode summation scheme, applied to nearly twenty thousand major earthquakes that occurred during 1976-2002, according to source mechanism solutions given by the Harvard Central Moment Tensor catalog. Compared to the truly large ones earlier in the century, the earthquakes we study are individually all too small to have left any discernible signature in geodetic records of Earth rotation or global gravity field. However, their collective effects continue to exhibit an extremely strong statistical tendencies. For example, earthquakes conspire to decrease J2 and J22 while shortening LOD, resulting in a rounder and more compact Earth. Strong tendency is also seen in the earthquakes trying to nudge the Earth rotation pole towards approximately 140 degrees E, roughly opposite to the observed polar drift direction. The geophysical significance and implications will be further studied.

Chao, B. F.↗
NASA NTRS2000

Coseismic Excitation of the Earth's Polar Motion

Apart from the shaking near the epicenter that is the earthquake, a seismic event creates a permanent field of dislocation in the entire Earth. This redistribution of mass changes (slightly) the Earth's interia tensor; and the Earth's rotation will change in accordance with the conservation of angular momentum.

Earth↗