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At least 37 records · Page 2

Cosmic-ray streaming and anisotropies

The paper is concerned with the differential current densities and anisotropies that exist in the interplanetary cosmic-ray gas, and in particular with a correct formulation and simple interpretation of the momentum equation that describes these on a local basis. Two examples of the use of this equation in the interpretation of previous data are given. It is demonstrated that in interplanetary space, the electric-field drifts and convective flow parallel to the magnetic field of cosmic-ray particles combine as a simple convective flow with the solar wind, and that there exist diffusive currents and transverse gradient drift currents. Thus direct reference to the interplanetary electric-field drifts is eliminated, and the study of steady-state and transient cosmic-ray anisotropies is both more systematic and simpler.

Forman, M. A.↗

A practical method of determining water current velocities and diffusion coefficients in coastal waters by remote sensing techniques

A simplified procedure is presented for determining water current velocities and diffusion coefficients. Dye drops which form dye patches in the receiving water are made from an aircraft. The changes in position and size of the patches are recorded from two flights over the area. The simplified data processing procedure requires only that the ground coordinates about the dye patches be determined at the time of each flight. With an automatic recording coordinatograph for measuring coordinates and a computer for processing the data, this technique provides a practical method of determining circulation patterns and mixing characteristics of large aquatic systems. This information is useful in assessing the environmental impact of waste water discharges and for industrial plant siting.

James, W. P.↗

Nonlinear programming optimization of a single-stack electrodialysis desalination system for cost efficiency

Electrodialysis (ED) presents a competitive method for desalinating brackish waters. In this work, we perform cost optimization of a single-stack ED system across a range of feed salinities and water recoveries while optimizing operating voltage, number of cell pairs, and cell length. The results of our optimization show that the levelized cost of water (LCOW) increases with an increase in feed salinity. The outcomes of our optimization show that cost-optimal design generally increases cell length while decreasing cell pair number and operating voltage with an increase in salinity. These trends are nonlinear, with the number of cell pairs and applied voltage exhibiting local maxima when operating at low salinity and high recovery. We discuss the underlying mechanism for cell length becoming a leveraging design parameter by inspecting the length-dependent profiles of key electrochemical properties of the ED cell. Finally, we present how increasing performance metrics and decreasing costs impact LCOW, demonstrating that innovations that decrease counter-current diffusion have resulted in the highest decrease of LCOW.

42 ENGINEERING↗

Stone-Wales defect-rich carbon-supported dual-metal single atom sites for Zn-air batteries

In this study, we aim to obtain a fundamental understanding of active sites near stone-wales (SW) defects rich nitrogen-doped graphene (DG) with specific coordination of carbon atom rings. It reveals that the SW rich defects ( e.g., pentagon (5), pentagon—octagon—pentagon ( i.e . 585), or pentagon-heptagon-heptagon-pentagon (5775) rings, appears correspondingly with carbon rings that brought active sites during catalytic reactions. Moreover, we anchored dual isolated metallic atoms (Ni/Fe) on DG support via linkers (O/N) called NiFe-DG. X-ray absorption spectroscopy indicates Ni/Fe metal single atoms are embedded via Fe-N 4 and Ni-N 4 coordination on DG surfaces. It exhibits high catalytic activity for oxygen reduction reaction (ORR) with an onset potential of 0.97 V, a half-wave potential of 0.86 V, and diffusion current density of 5.7 mA cm – 2 , which is at par with commercial Pt/C. The catalyst shows superior stability, retained 82% of the initial current density even after 12 h under an applied potential of 0.86 V. Similarly, the oxygen evolution reaction (OER) overpotential of 358 mV was achieved at 10 mA cm – 2 with a lower Tafel slope value (76 mV/dec) than commercial Pt/C. It maintains 85% stability for 12 h at a constant potential of 1.588 V, shows better stability than commercial Pt/C.

25 ENERGY STORAGE↗

Understanding the origin of Tabula Rasa-induced defects in n-type Cz c-Si: The case of nitrogen atmosphere

Phosphorus-doped Czochralski-grown silicon (Cz-Si) has been gaining market share in the large-scale manufacturing of high-efficiency silicon (Si)-based photovoltaic (PV) devices thanks to higher carrier lifetimes than their boron-doped counterpart. However, the fabrication of n-type Cz-Si based solar cells often requires process steps with much higher temperatures and longer times than p-type Silicon. Defect interaction with the high temperatures during such processes tend to be detrimental to the n-type Cz-Si carrier lifetime, therefore limiting the final device efficiency. Short thermal anneals before cell processing, known as Tabula Rasa (TR), have been proposed to mitigate the thermally induced lifetime degradation during n-type Cz-Si solar cell fabrication. This work thoroughly investigates the defects responsible for the lifetime degradation after TR in a N 2 atmosphere treatment. We use temperature-injection-dependent lifetime spectroscopy and the thickness variation method to decouple the effects of TR treatment in the bulk and the surface of the n-type Cz-Si wafers. Using the defect parameter contour mapping (DPCM), we identify the defect energy level (E t ) and the capture cross-section ratio (k) of the most likely process-induced defect, which aligns with previously proposed Si vacancy-associated defects. The DPCM reveals that these vacancy-associated defects have a shallow energy level E t - E v ~0.13 eV and very efficient electron capture cross section k~600. Unexpectedly, the bulk degradation due to vacancy defects in the volume of the wafer, is accompanied by a significant increase in the surface recombination as well. Through evaluating the surface recombination velocity temperature- and injection dependence, we show that after TR, at room temperature and for an injection level of 10 15 cm -3 , in a wafer passivated with a-Si:H(i) the surface recombination dominates the overall lifetime response. Here we hypothesize that the near surface vacancy-associated bulk defects play a role in lowering the electron diffusion current into the a-Si:H(i) from the c-Si(n) reducing the field-effect passivation.

14 SOLAR ENERGY↗

Injection Parameters That Promote Branching of Hydraulic Cracks

Fluid injection into rock formations can either produce complex branched hydraulic fractures, create simple planar fractures, or be dominated by porous diffusion. Currently, the optimum injection parameters to create branched fractures are unknown. We conducted repeatable hydraulic fracturing experiments using analog-rock samples with controlled heterogeneity to quantify the fluid parameters that promote fracture branching. A large range of injection rates and fluid viscosities were used to investigate their effects on induced fracture patterns. Paired with a simple analytical model, our results identify the threshold at which fracture transitions from an isolated planar crack to branched cracks when closed natural fractures exist. These results demonstrate that this transition can be controlled by injection rate and fluid viscosity. In relation to the field practices, the present model predicts slickwater and lower viscosity fluid injections promote fracture branching, with the Marcellus shale used as an example.

58 GEOSCIENCES↗

Nonlinear electronic excitation in water under proton irradiation: a first principles study

Nonlinear dynamics of electronic excitation bridge physical and physicochemical stages of water radiolysis under proton irradiation, a multi-scale physicochemical process that is fundamental to a wide range of technological and medical applications of high-energy protons. We study the spatial and temporal changes to the excited holes generated in this ionization event using first-principles theory simulation. A significant majority of holes are formed in the immediate vicinity of the irradiating proton paths, and these holes decay rapidly, while secondary excitations are simultaneously induced in regions farther away. While the hole population remains constant, the observed spatially spreading hole distribution cannot be described as concentration-dependent diffusion current. Compared to the primary excitation induced by the irradiating protons, the secondary excitation farther away is somewhat less energetic. Here, the first-principles theory simulation here provides a detailed description of how the primary excitation by proton radiation precedes the formation of cationic holes, which undergo ultrafast chemical processes in water radiolysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electrical Analysis of Pulsed Laser Annealed Poly-Si: Ga/SiOx Passivating Contacts

In this contribution, we examine Ga hyper-doped poly-Si/SiOx contacts realized by pulsed laser melting (PLM). Here, we use Ga as a novel p-type dopant and B as a conventional dopant to induce non-equilibrium doping using an excimer laser. We perform simulations to visualize the maximum melt depth profiles within the poly-Si, with a goal of distributing dopants close to the tunneling oxide, but at the same time preserving the passivation. Hall measurements show that sheet resistance for B is lower than Ga due to its higher solid solubility limit in Si. After comparing the Hall active dopant concentration with the chemical concentration obtained by SIMS measurement, we show nearly 100% activation B activation reaching 10^21 cm-3, while only ~20% activation for Ga. Nevertheless, we achieve active doping concentrations of Ga in poly-Si six times higher than its solid solubility limit in Si (~10^19 cm-3). We compare our Hall mobilities with values in the literature for c-Si and show that B mobilities in laser-treated poly-Si are close to that of the literature value for B, while Ga mobilities are lower, possibly due to additional scattering channels within grain boundaries and deformed lattice. We also compare our results on PLM samples with conventional furnace annealed samples, and we show much higher percent activation and mobilities. Previously, we showed a low contact resistivity of 35.5 +/- 2.4 m..omega..cm2. Here, we further confirm this result by scanning spreading resistance microscopy and Kelvin force nanoprobe microscopy. We demonstrate that our poly-Si: Ga/nCz contact exhibits large drift and diffusion currents under normal cell operating voltage, which widens the laser processing window for a good metal/poly-Si/c-Si contact.

high-efficiency solar cells↗

Modified equilibrium distributions for Cooper-Frye particlization

We introduce a positive-definite single-particle distribution that is suitable for describing the transition from a macroscopic hydrodynamic to a microscopic kinetic description during the late stages of heavy-ion collisions in the presence of moderately large viscous corrections. The modified equilibrium distribution function can be constructed with hydrodynamic input from either relativistic viscous fluid dynamics or anisotropic fluid dynamics. We test the modified equilibrium distribution's hydrodynamic output for a stationary hadron resonance gas subject to either shear stress, bulk pressure, or baryon diffusion current at a given freeze-out temperature and baryon chemical potential. While it does not reproduce all components of the net baryon current and energy-momentum tensor exactly, it significantly improves upon the customary linearized approximations for the nonequilibrium correction δf n which typically lead to unphysical negative distribution functions at large particle momenta. A comparison of particle spectra and p T –differential elliptic flow coefficients from the Cooper–Frye formula computed with the modified equilibrium distribution and with linearized δf n corrections is presented, for two different (2 + 1)–dimensional hypersurfaces corresponding to central and noncentral Pb + Pb collisions at the Large Hadron Collider (LHC).

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Quasi-steady plasma acceleration.

A coaxial plasma accelerator driven by protracted pulses of current in the range of 10,000 to 100,000 A and synchronized mass flows from 1.0 to 36 g/sec argon attains, after some tens of microseconds, a stable magnetoplasmadynamic acceleration mode. This 'quasi-steady' discharge form is characterized by constant terminal voltage and current, a diffuse, fixed current distribution within the discharge, and a steady plasma efflux at velocities of approximately 20 km/sec. Measured potential distributions reveal that the bulk of the arc voltage gradient, exclusive of the electrode falls, occurs within two diameters of the cathode, and is normal to it. The anode fall voltage varies inversely with local current density, implying substantially lower anode losses at higher power arc operation. Spectroscopic, potential, and velocity measurements indicate the existence of a characteristic mass flow rate for a given current, below which arc operation becomes erratic.

Jahn, R. G.↗

Surface effects in high voltage silicon solar cells

The surface of low-resistivity silicon solar cells appears to be a major source of dark diffusion current. This region, consisting of the interface and the adjacent heavily doped layer, therefore, prevents attainment of the high open-circuit voltages expected from these cells. This paper describes the experimental effort carried out to reduce the various contributions of dark current from the surface. Analysis of results from this effort points to means of improving cell voltages by changing processing and structures.

Meulenberg, A.↗

Autohesive strength development in polysulfone resin and graphite-polysulfone composites

The effects of bonding temperature and contact time on autohesive strength development in thermoplastic polysulfone resin and graphite-polysulfone composites were investigated. Two test methods were examined to measure autohesion in the neat resin samples. These included an interfacial tension test and a compact tension fracture toughness test. Autohesive strength development in fiber-reinforced composites was measured using a double cantilever beam interlaminar fracture toughness test. The results of the tests were compared with current diffusion theories explaining crack healing and welding of glassy polymers. Discrepancies between the results of the present investigation and the diffusion theories are discussed.

Howes, Jeremy C.↗

Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

Weinberg, I.↗

Strong Pitch-Angle Diffusion of Ring Current Ions in Geomagnetic Storm-Associated Conditions

Do electromagnetic ion cyclotron (EMIC) waves cause strong pitch-angle diffusion of RC ions? This question is the primary motivation of this paper and has been affirmatively answered from the theoretical point of view. The materials that are presented in the Results section show clear evidence that strong pitch-angle diffusion takes place in the inner magnetosphere indicating an important role for the wave-particle interaction mechanism in the formation of RC ions and EMIC waves.

Khazanov, G. V.↗

Electrochemical properties of Gd(III) ions in LiCl-KCl-GdCl 3 at 723–1023 K

Electrochemical behavior of Gd(III) ions in molten LiCl-KCl-GdCl 3 was investigated at 723–1023 K via cyclic voltammetry using tungsten as a working electrode, Gd-Bi (mole fraction, x Gd = 0.16) as a reference electrode, and Gd-Bi (x Gd = 0.02) as a counter electrode. A single reduction–oxidation wave was observed, confirming a single-step, 3-electron transfer Gd(III)/Gd transition. The cathodic peak potential exhibited minimal change (<13 mV) over a wide range of scan rates (0.05–0.30 V s –1 ), indicating facile charge transfer kinetics (i.e., a reversible electrode process). A nucleation overpotential associated with solid Gd deposition was observable at low temperatures (T < 823 K). The mass transport properties of Gd(III) ions were estimated using the Berzins and Delahay relation based on diffusion-limiting peak current. The diffusivity values were determined to be D Gd(III) = 0.5–2.7 × 10 –5 cm 2 s –1 at 723–1023 K with an associated activation energy of E a = 33.9 (±1.0) kJ mol –1 . Finally, the two-phase [liquid + GdBi] Gd-Bi alloy reference electrode experienced less than 0.5 mV of drift over 5 days of repeated electrochemical measurements, indicating high stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗