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All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Automated Extraction of Flow Features

Computational Fluid Dynamics (CFD) simulations are routinely performed as part of the design process of most fluid handling devices. In order to efficiently and effectively use the results of a CFD simulation, visualization tools are often used. These tools are used in all stages of the CFD simulation including pre-processing, interim-processing, and post-processing, to interpret the results. Each of these stages requires visualization tools that allow one to examine the geometry of the device, as well as the partial or final results of the simulation. An engineer will typically generate a series of contour and vector plots to better understand the physics of how the fluid is interacting with the physical device. Of particular interest are detecting features such as shocks, recirculation zones, and vortices (which will highlight areas of stress and loss). As the demand for CFD analyses continues to increase the need for automated feature extraction capabilities has become vital. In the past, feature extraction and identification were interesting concepts, but not required in understanding the physics of a steady flow field. This is because the results of the more traditional tools like; iso-surface, cuts and streamlines, were more interactive and easily abstracted so they could be represented to the investigator. These tools worked and properly conveyed the collected information at the expense of a great deal of interaction. For unsteady flow-fields, the investigator does not have the luxury of spending time scanning only one "snapshot" of the simulation. Automated assistance is required in pointing out areas of potential interest contained within the flow. This must not require a heavy compute burden (the visualization should not significantly slow down the solution procedure for (co-processing environments). Methods must be developed to abstract the feature of interest and display it in a manner that physically makes sense.

Dorney, Suzanne↗
NASA NTRS1975

Power transistor performance tradeoffs

Recent advances in the understanding of bipolar device physics permit the derivation of a number of quantitative relationships which are useful for improving existing designs and also for assessing the feasibility of proposed devices. This paper describes three important tradeoffs which apply to the design and performance of high-voltage transistors in inverter circuits.

Hower, P. L.↗
NASA NTRS2005

Automated Extraction of Flow Features

Computational Fluid Dynamics (CFD) simulations are routinely performed as part of the design process of most fluid handling devices. In order to efficiently and effectively use the results of a CFD simulation, visualization tools are often used. These tools are used in all stages of the CFD simulation including pre-processing, interim-processing, and post-processing, to interpret the results. Each of these stages requires visualization tools that allow one to examine the geometry of the device, as well as the partial or final results of the simulation. An engineer will typically generate a series of contour and vector plots to better understand the physics of how the fluid is interacting with the physical device. Of particular interest are detecting features such as shocks, re-circulation zones, and vortices (which will highlight areas of stress and loss). As the demand for CFD analyses continues to increase the need for automated feature extraction capabilities has become vital. In the past, feature extraction and identification were interesting concepts, but not required in understanding the physics of a steady flow field. This is because the results of the more traditional tools like; isc-surface, cuts and streamlines, were more interactive and easily abstracted so they could be represented to the investigator. These tools worked and properly conveyed the collected information at the expense of a great deal of interaction. For unsteady flow-fields, the investigator does not have the luxury of spending time scanning only one "snapshot" of the simulation. Automated assistance is required in pointing out areas of potential interest contained within the flow. This must not require a heavy compute burden (the visualization should not significantly slow down the solution procedure for co-processing environments). Methods must be developed to abstract the feature of interest and display it in a manner that physically makes sense.

Dorney, Suzanne↗
NASA NTRS2000

2D Quantum Mechanical Study of Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗
NASA NTRS2001

2D Quantum Transport Modeling in Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗
NASA NTRS2017

The NASA Augmented/Virtual Reality Lab: The State of the Art at KSC

The NASA Augmented Virtual Reality (AVR) Lab at Kennedy Space Center is dedicated to the investigation of Augmented Reality (AR) and Virtual Reality (VR) technologies, with the goal of determining potential uses of these technologies as human-computer interaction (HCI) devices in an aerospace engineering context. Begun in 2012, the AVR Lab has concentrated on commercially available AR and VR devices that are gaining in popularity and use in a number of fields such as gaming, training, and telepresence. We are working with such devices as the Microsoft Kinect, the Oculus Rift, the Leap Motion, the HTC Vive, motion capture systems, and the Microsoft Hololens. The focus of our work has been on human interaction with the virtual environment, which in turn acts as a communications bridge to remote physical devices and environments which the operator cannot or should not control or experience directly. Particularly in reference to dealing with spacecraft and the oftentimes hazardous environments they inhabit, it is our hope that AR and VR technologies can be utilized to increase human safety and mission success by physically removing humans from those hazardous environments while virtually putting them right in the middle of those environments.

Little, William↗
NASA NTRS1992

Simulation of electron transport in quantum well devices

Double barrier resonant tunneling diodes (DBRTD) have received much attention as possible terahertz devices. Despite impressive experimental results, the specifics of the device physics (i.e., how the electrons propagate through the structure) are only qualitatively understood. Therefore, better transport models are warranted if this technology is to mature. In this paper, the Lattice Wigner function is used to explain the important transport issues associated with DBRTD device behavior.

Miller, D. R.↗
NASA NTRS2005

Visualization Methods for Viability Studies of Inspection Modules for the Space Shuttle

An effective simulation of an object, process, or task must be similar to that object, process, or task. A simulation could consist of a physical device, a set of mathematical equations, a computer program, a person, or some combination of these. There are many reasons for the use of simulators. Although some of the reasons are unique to a specific situation, there are many general reasons and purposes for using simulators. Some are listed but not limited to (1) Safety, (2) Scarce resources, (3) Teaching/education, (4) Additional capabilities, (5) Flexibility and (6) Cost. Robot simulators are in use for all of these reasons. Virtual environments such as simulators will eliminate physical contact with humans and hence will increase the safety of work environment. Corporations with limited funding and resources may utilize simulators to accomplish their goals while saving manpower and money. A computer simulation is safer than working with a real robot. Robots are typically a scarce resource. Schools typically don t have a large number of robots, if any. Factories don t want the robots not performing useful work unless absolutely necessary. Robot simulators are useful in teaching robotics. A simulator gives a student hands-on experience, if only with a simulator. The simulator is more flexible. A user can quickly change the robot configuration, workcell, or even replace the robot with a different one altogether. In order to be useful, a robot simulator must create a model that accurately performs like the real robot. A powerful simulator is usually thought of as a combination of a CAD package with simulation capabilities. Computer Aided Design (CAD) techniques are used extensively by engineers in virtually all areas of engineering. Parts are designed interactively aided by the graphical display of both wireframe and more realistic shaded renderings. Once a part s dimensions have been specified to the CAD package, designers can view the part from any direction to examine how it will look and perform in relation to other parts. If changes are deemed necessary, the designer can easily make the changes and view the results graphically. However, a complex process of moving parts intended for operation in a complex environment can only be fully understood through the process of animated graphical simulation. A CAD package with simulation capabilities allows the designer to develop geometrical models of the process being designed, as well as the environment in which the process will be used, and then test the process in graphical animation much as the actual physical system would be run . By being able to operate the system of moving and stationary parts, the designer is able to see in simulation how the system will perform under a wide variety of conditions. If, for example, undesired collisions occur between parts of the system, design changes can be easily made without the expense or potential danger of testing the physical system.

Mobasher, Amir A.↗
NASA NTRS1976

Gate assisted turn-off thyristor with cathode shunts and dynamic gate

A 1,000-V, 200-A gate-assisted turn-off thyristor (GATT) is described, whose design features include an interdigitated shunted cathode, a dynamic gate, a means for optimizing the carrier lifetime level, and a bypass diode. The device physics of gate-assisted turn-off are reviewed. Based on this, improvements in the design are described. It is shown that a prime failure mode can be eliminated and that the gate-assist signal voltage can be substantially decreased by employing a shunted cathode emitter. The test data show excellent turn-on characteristics due to the dynamic gate and the long perimeter of the edge of the main cathode. Turn-off times as short as 3 microsec are obtained. The combination of controlling the carrier lifetime with a precisely controlled and easily variable irradiation dose of high energy electrons with gate assist current provides for simple, precision tailoring of the device characteristics to the intended application.

Schlegel, E. S.↗
NASA NTRS1972

Activities of Western Research Application Center

Operations of the regional dissemination center for NASA technology collection and information transfer are reported. Activities include customized searches for engineering and scientific applications in industry and technology transfers to businesses engaged in manufacturing high energy physics devices, subsurface instruments, batteries, medical instrumentation, and hydraulic equipment.

Source record↗
NASA NTRS1983

Advanced 3-V semiconductor technology assessment

Against a background of an extensive survey of the present state of the art in the field of III-V semiconductors for operation at microwave frequencies (or gigabit rate speeds), likely requirements of future space communications systems are identified, competing technologies and physical device limitations are discussed, and difficulties in implementing emerging technologies are projected. On the basis of these analyses, specific research and development programs required for the development of future systems components are recommended.

Nowogrodzki, M.↗
NASA NTRS1985

Efficient implementation of real-time programs under the VAX/VMS operating system

Techniques for writing efficient real-time programs under the VAX/VMS oprating system are presented. Basic operations are presented for executing at real-time priority and for avoiding needlless processing delays. A highly efficient technique for accessing physical devices by mapping to the input/output space and accessing the device registrs directly is described. To illustrate the application of the technique, examples are included of different uses of the technique on three devices in the Langley Avionics Integration Research Lab (AIRLAB): the KW11-K dual programmable real-time clock, the Parallel Communications Link (PCL11-B) communication system, and the Datacom Synchronization Network. Timing data are included to demonstrate the performance improvements realized with these applications of the technique.

Johnson, S. C.↗
NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗
NASA NTRS1987

Current distribution in a three-dimensional IC analyzed by a perturbation method. Part 1: A simple steady state theory

The steady state current distribution in a three dimensional integrated circuit is presented. A device physics approach, based on a perturbation method rather than an equivalent lumped circuit approach, is used. The perturbation method allows the various currents to be expressed in terms of elementary solutions which are solutions to very simple boundary value problems. A Simple Steady State Theory is the subtitle because the most obvious limitation of the present version of the analysis is that all depletion region boundary surfaces are treated as equipotential surfaces. This may be an adequate approximation in some applications but it is an obvious weakness in the theory when applied to latched states. Examples that illustrate the use of these analytical methods are not given because they will be presented in detail in the future.

Edmonds, Larry D.↗
NASA NTRS1990

Quantum Well Infrared Photodetectors (QWIP)

There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.

Levine, B. F.↗
NASA NTRS1991

Knowledge repositories for multiple uses

In the life cycle of a complex physical device or part, for example, the docking bay door of the Space Station, there are many uses for knowledge about the device or part. The same piece of knowledge might serve several uses. Given the quantity and complexity of the knowledge that must be stored, it is critical to maintain the knowledge in one repository, in one form. At the same time, because of quantity and complexity of knowledge that must be used in life cycle applications such as cost estimation, re-design, and diagnosis, it is critical to automate such knowledge uses. For each specific use, a knowledge base must be available and must be in a from that promotes the efficient performance of that knowledge base. However, without a single source knowledge repository, the cost of maintaining consistent knowledge between multiple knowledge bases increases dramatically; as facts and descriptions change, they must be updated in each individual knowledge base. A use-neutral representation of a hydraulic system for the F-111 aircraft was developed. The ability to derive portions of four different knowledge bases is demonstrated from this use-neutral representation: one knowledge base is for re-design of the device using a model-based reasoning problem solver; two knowledge bases, at different levels of abstraction, are for diagnosis using a model-based reasoning solver; and one knowledge base is for diagnosis using an associational reasoning problem solver. It was shown how updates issued against the single source use-neutral knowledge repository can be propagated to the underlying knowledge bases.

Williamson, Keith↗
NASA NTRS1985

Coherent laser radar: Current European systems

Coherent laser radar systems at 10 micrometers have been studied in Europe for well over a decade. In the past few years, the level of activity has increased rapidly and work is now in progress on systems and components at a large number of research institutions and industrial firms. Some of the organizations have had specific involvement with wind and aerosol measuring lidars, while others are largely concerned with components. Some of the particular European strong points are reviewed in device physics and technology. In addition to wind measurement systems, much work has been done on other applications of coherent laser radar including ranging, imaging, and coherent DIAL studies. Some of these other applications are also outlined.

Vaughan, J. Michael↗
NASA NTRS1992

Irrelevance in Problem Solving

The notion of irrelevance underlies many different works in AI, such as detecting redundant facts, creating abstraction hierarchies and reformulation and modeling physical devices. However, in order to design problem solvers that exploit the notion of irrelevance, either by automatically detecting irrelevance or by being given knowledge about irrelevance, a formal treatment of the notion is required. In this paper we present a general framework for analyzing irrelevance. We discuss several properties of irrelevance and show how they vary in a space of definitions outlined by the framework. We show how irrelevance claims can be used to justify the creation of abstractions thereby suggesting a new view on the work on abstraction.

Levy, Alon Y.↗