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At least 37 records · Page 2

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NASA NTRS2011

Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

Evans, Laura J.↗

NASA NTRS1974

Photomultiplier circuit including means for rapidly reducing the sensitivity thereof

A simple, reliable and inexpensive control circuit is described for rapidly reducing the bias voltage across one or more of the dynode stages of a photomultiplier, to substantially decrease its sensitivity to incoming light at those times where excess light intensity might damage the tube. The control circuit comprises a switching device, such as a silicon controlled rectifier (SCR), coupled between a pair of the electrodes in the tube, preferably the cathode and first dynode, or the first and second dynodes, the switching device operating in response to a trigger pulse applied to its gate to short circuit the two electrodes. To insure the desired reduction in sensitivity, two switching stages, the devices be employed between two of the electrode stages, the devices being operated simultaneously to short circuit both stages.

Mcclenahan, J. O.↗

NASA NTRS1997

Varying potential silicon carbide gas sensor

A hydrocarbon gas detection device operates by dissociating or electro-chemically oxidizing hydrocarbons adsorbed to a silicon carbide detection layer. Dissociation or oxidation are driven by a varying potential applied to the detection layer. Different hydrocarbon species undergo reaction at different applied potentials so that the device is able to discriminate among various hydrocarbon species. The device can operate at temperatures between 100.degree. C. and at least 650.degree. C., allowing hydrocarbon detection in hot exhaust gases. The dissociation reaction is detected either as a change in a capacitor or, preferably, as a change of current flow through an FET which incorporates the silicon carbide detection layers. The silicon carbide detection layer can be augmented with a pad of catalytic material which provides a signal without an applied potential. Comparisons between the catalytically produced signal and the varying potential produced signal may further help identify the hydrocarbon present.

Shields, Virgil B.↗

NASA NTRS1975

Pneumatic load compensating or controlling system

A pneumatic load compensating or controlling system for restraining a load with a predetermined force or applying a predetermined force to the load is described; it includes a source of pressurized air, a one-way pneumatic actuator operatively connected to a load, and a fluid conduit fluidically connecting the actuator with the source of pressurized air. The actuator is of the piston and cylinder type, and the end of the fluid conduit is connected to the upper or lower portion of the cylinder whereby the actuator alternatively and selectively restrains the load with a predetermined force or apply a predetermined force to the load. Pressure regulators are included within the system for variably selectively adjusting the pressurized fluid to predetermined values as desired or required; a pressure amplifier is included within the system for multiplying the pressurized values so as to achieve greater load forces. An accumulator is incorporated within the system as a failsafe operating mechanism, and visual and aural alarm devices, operatively associated with pressure detecting apparatus, readily indicate the proper or improper functioning of the system.

Rogers, J. R.↗

NASA NTRS2011

Commercially Hosted Government Payloads: Lessons from Recent Programs

In a commercially hosted operational mode, a scientific instrument or operational device is attached to a spacecraft but operates independently from the spacecraft s primary mission. Despite the expected benefits of this arrangement, there are few examples of hosted payload programs actually being executed by government organizations. The lack of hosted payload programs is largely driven by programmatic challenges, both real and perceived, rather than by technical challenges. Partly for these reasons, NASA has not sponsored a hosted payload program, in spite of the benefits and visible community interest in doing so. In the interest of increasing the use of hosted payloads across the space community, this paper seeks to alleviate concerns about hosted payloads by identifying these programmatic challenges and presenting ways in which they can be avoided or mitigated. Despite the challenges, several recent hosted payload programs have been successfully completed or are currently in progress. This paper presents an assessment of these programs, with a focus on acquisition, costs, schedules, risks, and other programmatic aspects. The hosted payloads included in this study are the Federal Aviation Administration's Wide Area Augmentation System (WAAS) payloads, United States Coast Guard's Automatic Identification System (AIS) demonstration payload, Department of Defense's IP Router In Space (IRIS) demonstration payload, the United States Air Force's Commercially Hosted Infrared Payload (CHIRP), and the Australian Defence Force's Ultra High Frequency (UHF) payload. General descriptions of each of these programs are presented along with issues that have been encountered and lessons learned from those experiences. A set of recommended approaches for future hosted payload programs is presented, with a focus on addressing risks or potential problem areas through smart and flexible contracting up front. This set of lessons and recommendations is broadly applicable to future hosted payload programs, whether they are technology demonstrations, communications systems, or operational sensors. Additionally, we present a basic cost model for commercial access to space for hosted payloads as a function of payload mass

Andraschko, Mark A.↗

NASA NTRS1975

Bubble-domain circuit wafer evaluation coil set

Coil structures have been designed to permit nondestructive testing of bubble wafers. Wafers can be electrically or optically inspected and operated from quasi-static frequency to maximum device operating frequency.

Chen, T. T.↗

NASA NTRS1989

Reflection oscillators employing series resonant crystals'

A reflection oscillator is provided which employs an active device operated in its roll-off region and two resonant circuits. For an oscillator employing a bipolar transistor, the emitter is connected to a series resonant capacitor-crystal network and the base is connected to an L-C tank circuit with the transistor being operated in the roll-off region of its gain versus frequency curve. This will provide a very high frequency of operation with a relatively inexpensive, low frequency, active device. These oscillators are easily tuned, stable, and require little dc power.

Kleinberg, Leonard L.↗

NASA NTRS1994

In(X)Ga(1-X) As Strain-Layer Multiple-Quantum-Well Laser Diodes

Fabricated on InP substrates, devices operate at room temperature, emitting at wavelengths near 1.8 micrometers. By suitable modification of structure of devices, possible to achieve operation at any wavelength from 1.6 to 2.5 micrometers: this range important in lidar and in remote sensing of atmospheric gases. Quantum-well and barrier layers sandwiched between two 60-nm-thick layers of lattice-matched InGaAs. InGaAs layers sandwiched between two 150-nm-thick layers of InGaAsP. Those layers sandwiched, in turn, between InP substrate and InP cladding layer. Also layer of InGaAs atop InP cladding layers.

Forouhar, Siamak↗

NASA NTRS2012

670-GHz Down- and Up-Converting HEMT-Based Mixers

A large category of scientific investigation takes advantage of the interactions of signals in the frequency range from 300 to 1,000 GHz and higher. This includes astronomy and atmospheric science, where spectral observations in this frequency range give information about molecular abundances, pressures, and temperatures of small-sized molecules such as water. Additionally, there is a minimum in the atmospheric absorption at around 670 GHz that makes this frequency useful for terrestrial imaging, radar, and possibly communications purposes. This is because 670 GHz is a good compromise for imaging and radar applications between spatial resolution (for a given antenna size) that favors higher frequencies, and atmospheric losses that favor lower frequencies. A similar trade-off applies to communications link budgets: higher frequencies allow smaller antennas, but incur a higher loss. All of these applications usually require converting the RF (radio frequency) signal at 670 GHz to a lower IF (intermediate frequency) for processing. Further, transmitting for communication and radar generally requires up-conversion from IF to the RF. The current state-of-the-art device for performing the frequency conversion is based on Schottky diode mixers for both up and down conversion in this frequency range for room-temperature operation. Devices that can operate at room temperature are generally required for terrestrial, military, and planetary applications that cannot tolerate the mass, bulk, and power consumption of cryogenic cooling. The technology has recently advanced to the point that amplifiers in the region up to nearly 1,000 GHz are feasible. Almost all of these have been based on indium phosphide pseudomorphic high-electron mobility transistors (pHEMTs), in the form of monolithic microwave integrated circuits (MMICs). Since the processing of HEMT amplifiers is quite differ en t from that of Schottky diodes, use of Schottky mixers requires separate MMICs for the mixers and amplifiers. Fabrication of all the down-/up-conversion circuitry on single MMICs, using a ll-HEMT circuits, would constitute a major advance in circuit simplicity.

Schlecht, Enrich T.↗

NASA NTRS1974

Device for monitoring a change in mass in varying gravimetric environments

A remotely operable device for detecting changes as they occur in the mass of a selected specimen is described. The device is characterized by a balance beam including at one end a support for receiving a specimen having a changing mass and suspension means, including a flexure, supporting the beam near its center of gravity for pivotal movement proportional to changes occurring in the mass of the specimen. Strain gages coupled with the flexure provide a read-out indicative of the pivotal movement imparted to the beam.

Valinsky, J. P.↗

NASA NTRS1973

Foot pedal operated fluid type exercising device

A foot pedal operated exercising device is reported that contains a dynamometer formed of a pair of cylinders each containing a piston. The pistons are linked to each other. The upper portions of the two cylinders are joined together by a common opening to provide a common fluid reservoir and each piston is provided with a one way check valve to maintain an adequate supply of working fluid. Fluid from the driven cylinder is transmitted to the other cylinder through separate constant force spring biased valves each valve takes the predominant portion of the pressure drop thereby providing a constant force hydraulic dynamometer. A device is provided to determine the amount of movement of piston travel.

Crum, G. W.↗

NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗

NASA NTRS1979

Fixture for assembling solar panels

Vacuum fixture attaches array of silicon solar cells to mounting plate made of clear glass which holds and protects cells. Glass plate transmits, rather than absorbs, solar energy thus cooling cells for efficient operation. Device therefore reduces handling of cells and interconnecting conductors to one operation.

Dillard, P. A.↗

NASA NTRS1990

Human factors issues in telerobotic systems for Space Station Freedom servicing

Requirements for Space Station Freedom servicing are described and the state-of-the-art for telerobotic system on-orbit servicing of spacecraft is defined. The projected requirements for the Space Station Flight Telerobotic Servicer (FTS) are identified. Finally, the human factors issues in telerobotic servicing are discussed. The human factors issues are basically three: the definition of the role of the human versus automation in system control; the identification of operator-device interface design requirements; and the requirements for development of an operator-machine interface simulation capability.

Malone, Thomas B.↗

NASA NTRS2007

Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides

Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers

Kumar, Sushil↗

NASA NTRS2001

Electro-Thermal Simulation Studies of SiC Junction Diodes Containing Screw Dislocations Under High Reverse-Bias Operation

The objective of this work was to conduct a modeling study of SiC P-N junction diodes operating under high reverse biased conditions. Analytical models and numerical simulation capabilities were to be developed for self-consistent electro-thermal analysis of the diode current-voltage (I-V) characteristics. Data from GRC indicate that screw dislocations are unavoidable in large area SiC devices, and lead to changes in the SiC diode electrical response characteristics under high field conditions. For example, device instability and failures linked to internal current filamentation have been observed. The physical origin of these processes is not well understood, and quantitative projections of the electrical behavior under high field and temperature conditions are lacking. Thermal calculations for SiC devices have not been reported in the literature either. So estimates or projections of peak device temperatures and power limitations do not exist. This numerical study and simulation analysis was aimed at resolving some of the above issues. The following tasks were successfully accomplished: (1) Development of physically based models using one- and two-dimensional drift-diffusion theory for the transport behavior and I-V characteristics; (2) One- and two-dimensional heat flow to account for internal device heating. This led to calculations of the internal temperature profiles, which in turn, were used to update the electrical transport parameters for a self-consistent analysis. The temperature profiles and the peak values were thus obtainable for a given device operating condition; (3) Inclusion of traps assumed to model the presence of internal screw dislocations running along the longitudinal direction; (4) Predictions of the operating characteristics with and without heating as a function of applied bias with and without traps. Both one and two-dimensional cases were implemented; (5) Assessment of device stability based on the operating characteristics. The presence of internal non-uniformities, particularly filamentary structures, was probed and demonstrated; (6) Cause and physical origins of filamentary behavior and unstable I-V characteristics were made transparent; (7) It was demonstrated that diodes containing defects would be more prone to thermal breakdown associated with the temperature dependent decrease in the thermal conductivity; and (8) Finally, negative differential resistance (S-shaped NDR) which can potential lead to device instability and filamentary behavior was shown to occur for diodes containing a line of defects such as could be associated with a screw dislocation line.

Joshi, R. P.↗

NASA NTRS1977

The charge-flow transistor - A new MOS device

A new device, the charge-flow transistor (CFT), has been developed to achieve integrated MOS compatibility in sensor applications, such as gas, humidity, and fire detection, where one is interested in monitoring the transverse resistance of a thin film. The resistive material is incorporated into the gate structure of the CFT in such a way that there is a time delay between the application of the gate-to-source voltage and the appearance of a complete channel. This time delay depends on the resistivity of the thin film. A theory of device operation is presented, together with experimental results on the first CFT's. These results confirm the principles of operation, and demonstrate the utility of the CFT for making fully integrated sensing devices.

Senturia, S. D.↗

NASA NTRS1997

Apparatus and method for high-speed characterization of surfaces

This invention permits rapid determination of a three-dimensional contour of an object. The apparatus directs a laser beam onto a point on an object, and the scattered light is received by a position sensitive detector (PSD). The location at which scattered light is received can be related to the displacement of the point on the object, using basic trigonometry. The laser beam is deflected non-mechanically, by passing it through a crystal whose index of refraction is varied in a controlled manner. By proper control of the index of refraction, one can scan the beam across a desired area of the object, without using any moving parts, and can therefore obtain complete information about the contour of the object. The device operates without making any conventional images, and is therefore much faster than comparable devices of the prior art. Also, the laser and beam deflector can be housed in a small optical head which enables the device to reach normally inaccessible areas. The device can compare the test object with a reference object, or it can compare two objects for differences.

Hooker, Jeffery A.↗