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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

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DOE OSTI2024

Energy Delivery Systems with Verifiable Trustworthiness (Final Report)

Energy Delivery Systems (EDS) must be verified to be free from intrusive and malicious software. One way of verifying this software is to perform device scans to detect malicious code. Because it is possible to have “fileless” malware that exists only in device (volatile) memory, offline scanning and even many forms of online scanning is insufficient for detection. This project (“Verify”) addresses this need by performing direct sampling of memory during device operation to detect unexpected or modified software while not interfering with device operation. The Verify project provides a proof-of-concept of detection by random sampling combined with remote software- and timing-based attestation methods for robust detection of in-memory threats. An external review of Verify was performed by our partner, General Electric (GE), and a summary of their findings is provided.

97 MATHEMATICS AND COMPUTING↗

NASA NTRS1980

Power system interface and umbilical system study

System requirements and basic design criteria were defined for berthing or docking a payload to the 25 kW power module which will provide electrical power and attitude control, cooling, data transfer, and communication services to free-flying and Orbiter sortie payloads. The selected umbilical system concept consists of four assemblies and command and display equipment to be installed at the Orbiter payload specialist station: (1) a movable platen assembly which is attached to the power system with EVA operable devices; (2) a slave platen assembly which is attached to the payload with EVA operable devices; (3) a fixed secondary platen permanently installed in the power system; and (4) a fixed secondary platen permanently installed on the payload. Operating modes and sequences are described.

Source record↗

DOE OSTI2023

Towards linking lab and field lifetimes of perovskite solar cells

Metal halide perovskite solar cells (PSCs) represent a promising low-cost, thin-film photovoltaic (PV) technology, with unprecedented power conversion efficiencies (PCEs) obtained for both single-junction and tandem applications. To push PSCs toward commercialization, it is critical, albeit challenging, to understand device reliability under real-world outdoor conditions where multiple stress factors (e.g., light, heat, humidity) coexist, generating complicated degradation behaviors. It is necessary to identify accelerated indoor testing protocols - which can correlate specific stressors with observed degradation modes in fielded devices - to quickly guide PSC development. Here, we use a state-of-the-art p-i-n PSC stack (with PCE up to ~25.5%) to show that indoor accelerated stability tests can predict our 6-month outdoor aging tests. Device degradation rates under illumination and at elevated temperatures are most instructive for understanding outdoor device reliability. Further, we also find that the indium tin oxide (ITO)/self-assembled monolayer (SAM)-based hole transport layer (HTL)/perovskite interface most strongly affects our device operation stability. Improving the ion-blocking properties of the SAM HTL increases averaged device operational stability at 50 degree C-85 °C by a factor of ~2.8, reaching over 1000 h at 85 °C and to near 8200 h at 50 °C with a projected 20% degradation, which is among the best to date for high-efficiency p-i-n PSCs.

14 SOLAR ENERGY↗

DOE OSTI2024

Eliminating the Burn‐in Loss of Efficiency in Organic Solar Cells by Applying Dimer Acceptors as Supramolecular Stabilizers

Abstract The meta‐stable active layer morphology of organic solar cells (OSCs) is identified as the main cause of the rapid burn‐in loss of power conversion efficiency (PCE) during long‐term device operation. However, effective strategies to eliminate the associated loss mechanisms from the initial stage of device operation are still lacking, especially for high‐efficiency material systems. Herein, the introduction of molecularly engineered dimer acceptors with adjustable thermal transition properties into the active layer of OSCs to serve as supramolecular stabilizers for regulating the thermal transitions and optimizing the crystallization of the absorber composites is reported. By establishing intimate π‐π interactions with small‐molecule acceptors, these stabilizers can effectively reduce the trap‐state density (N t ) in the devices to achieve excellent PCEs over 19%. More importantly, the lowN t associated with an initially optimized morphology can be maintained under external stresses to significantly reduce the PCE burn‐in loss in devices. This research reveals a judicious approach to improving OPV stability by establishing a comprehensive correlation between material properties, active‐layer morphology, and device performance, for developing burn‐in‐free OSCs.

Chemistry↗

DOE OSTI2024

Charge Carrier Induced Structural Ordering And Disordering in Organic Mixed Ionic Electronic Conductors

Operational stability underpins the successful application of organic mixed ionic-electronic conductors (OMIECs) in a wide range of fields, including biosensing, neuromorphic computing, and wearable electronics. Here in this work, both the operation and stability of a p-type OMIEC material of various molecular weights are investigated. Electrochemical transistor measurements reveal that device operation is very stable for at least 300 charging/discharging cycles independent of molecular weight, provided the charge density is kept below the threshold where strong charge–charge interactions become likely. When electrochemically charged to higher charge densities, an increase in device hysteresis and a decrease in conductivity due to a drop in the hole mobility arising from long-range microstructural disruptions are observed. By employing operando X-ray scattering techniques, two regimes of polaron-induced structural changes are found: 1) polaron-induced structural ordering at low carrier densities, and 2) irreversible structural disordering that disrupts charge transport at high carrier densities, where charge–charge interactions are significant. These operando measurements also reveal that the transfer curve hysteresis at high carrier densities is accompanied by an analogous structural hysteresis, providing a microstructural basis for such instabilities. This work provides a mechanistic understanding of the structural dynamics and material instabilities of OMIEC materials during device operation.

36 MATERIALS SCIENCE↗

NASA NTRS2023

Single-Event Effect Testing of the Analog Devices AD8041ARZ Operational Amplifier

This study was undertaken to determine the single event transient distribution of a transimpedance amplifier configuration of the AD8041 Operational Amplifier. The AD8041 is made in a bipolar technology and the application of interest has a bipolar supply of ±5 V. The device was monitored for transient events on the output voltage during exposure to a heavy ion beam at Lawrence Berkeley National Laboratory’s (LBNL) 88-inch Cyclotron.

Matthew B. Joplin↗

DOE OSTI2025

Ferroelectric epitaxial Al(Sc/B)N/Mo/SiC heterostructures for high operating temperature devices

Advances in wurtzite nitride ferroelectrics of Al 1-x M x N (⁠ M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating > 200°C, a movement toward SiC-based platforms enables better performance over conventional Si, primarily due to the higher bandgap and lower intrinsic carrier concentration of SiC. Hence, the challenge is to develop a deposition process to integrate Al 1-x M x M x N ferroelectrics with elevated temperature-compatible materials for high temperature electronics such as the non-volatile memory component. We demonstrate epitaxial Al M N/Mo/SiC heterostructures, which provides both the crystalline and surface features that promote high-quality ferroelectric nitride film growth. Omega scans of the Mo (110) reflection exhibit a full width at half max of < 0.02° (40 arc sec) and the (0002) peak of the subsequently grown nitride film had a value of 1.1° for 160 nm thick Al 0.7 Sc 0.3 N and 1.3° for 400 nm thick Al 0.94 B 0.06 N. The crystallographic relationships found between the Al M N, Mo, and SiC layers indicate an advancement in sputter deposition of epitaxial films. Ferroelectric switching is also shown at 400 °C in both samples via polarization-electric field hysteresis and pulsed measurements, which exhibited P r values >100 μC cm -2 and E c between 3 and 4 M V cm -1 ⁠, despite a large presence of oxygen in both Al M N films ranging between 4 and 5 at.%, revealed by compositional analysis. This study demonstrates the process for synthesizing high-crystal quality ferroelectric nitride films, which can be used in extremely high temperature applications.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2024

Identification and Suppression of Point Defects in Bromide Perovskite Single Crystals Enabling Gamma‐Ray Spectroscopy

Abstract Methylammonium lead tribromide (MAPbBr 3 ) stands out as the most easily grown wide‐band‐gap metal halide perovskite. It is a promising semiconductor for room‐temperature gamma‐ray ( γ ‐ray) spectroscopic detectors, but no operational devices are realized. This can be largely attributed to a lack of understanding of point defects and their influence on detector performance. Here, through a combination of crystal growth design and defect characterization, including positron annihilation and impedance spectroscopy, the presence of specific point defects are identified and correlated to detector performance. Methylammonium (MA) vacancies, MA interstitials, and Pb vacancies are identified as the dominant charge‐trapping defects in MAPbBr 3 crystals, while Br vacancies caused doping. The addition of excess MABr reduces the MA and Br defects and so enables the detection of energy‐resolved γ ‐ray spectra using a MAPbBr 3 single‐crystal device. Interestingly, the addition of formamidinium (FA) cations, which converted to methylformamidinium (MFA) cations by reaction with MA + during crystal growth further reduced MA defects. This enabled an energy resolution of 3.9% for the 662 keV 137 Cs line using a low bias of 100 V. The work provides direction toward enabling further improvements in wide‐bandgap perovskite‐based device performance by reducing detrimental defects.

Ni, Zhenyi↗

DOE OSTI2020

A Simple Physical Model for Three-Terminal Tandem Cell Operation

We present a simple physical model that explains the device operation of a three-terminal (3T) IBC Si bottom cell platform that enables an efficient 3T tandem. If the IBC cell has two p-n junctions and one high-low junction (bipolar transistor), the two p-n junctions strongly interact via minority carrier diffusion in the base. In a two-BSF junction and one p-n junction IBC platform (single emitter), the BSF terminals interact via ohmic majority carrier current in the base. This interaction creates wide 'generating' power islands in the 2D current J 1 J 2 plane. The area and shape of these islands are determined by dissipative losses in the wafer base and in the cell contacts. Both positive and negative terminal currents are allowed for 3T operation, thus enabling both the top and bottom cells to operate at their full light currents. This opens new possibilities for 3T use in modules.

14 SOLAR ENERGY↗

NASA NTRS1973

Advanced investigation of two-phase charge-coupled devices

The performance of experimental two phase, charge-coupled shift registers constructed using polysilicon gates overlapped by aluminum gates was studied. Shift registers with 64, 128, and 500 stages were built and operated. Devices were operated at the maximum clock frequency of 20 MHz. Loss per transfer of less than .0001 was demonstrated for fat zero operation. The effect upon transfer efficiency of various structural and materials parameters was investigated including substrate orientation, resistivity, and conductivity type; channel width and channel length; and method of channel confinement. Operation of the devices with and without fat zero was studied as well as operation in the complete charge transfer mode and the bias charge, or bucket brigade mode.

Kosonocky, W. F.↗

NASA NTRS2009

Radiation-hardened fast acquisition/weak signal tracking system and method

A global positioning system (GPS) receiver and method of acquiring and tracking GPS signals comprises an antenna adapted to receive GPS signals; an analog radio frequency device operatively connected to the antenna and adapted to convert the GPS signals from an analog format to a digital format; a plurality of GPS signal tracking correlators operatively connected to the analog RF device; a GPS signal acquisition component operatively connected to the analog RF device and the plurality of GPS signal tracking correlators, wherein the GPS signal acquisition component is adapted to calculate a maximum vector on a databit correlation grid; and a microprocessor operatively connected to the plurality of GPS signal tracking correlators and the GPS signal acquisition component, wherein the microprocessor is adapted to compare the maximum vector with a predetermined correlation threshold to allow the GPS signal to be fully acquired and tracked.

Winternitz, Luke↗

DOE OSTI2024

Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation

Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on gallium nitride high electron mobility transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 × 10 12 to 3.76 × 10 14 cm 2 , and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (∼750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.

gallium nitride↗

NASA NTRS1976

Electron beam irradiation of thinned backside illuminated CCDs

The physical properties of backside illuminated surface channel CCD arrays and a pixel buried channel CCD array when bombarded with electrons were studied. The devices were mounted in a high vacuum system and irradiated with electrons generated by an electron gun. Basic measurements of EBS gain, dead voltage, transfer efficiency and dark current were performed to verify proper device operation. The surface channel devices were then irradiated with electrons of up to 8 keV energy for up to 98 hours while the buried channel device was irradiated with electrons.

Borsuk, G. M.↗

NASA NTRS1980

Evolution of snow sensors and the potential of microwave devices in operational telemetry networks

Both manually collected snow-course data and telemetered information from SNOTEL sites throughout the western United States are used to make forecasts of streamflow. Although these conventional methods have proven highly reliable over the years, they still exhibit some shortcomings. Active and passive microwave remote sensing systems recently developed and tests present the potential to eliminate some negative aspects associated with other types of sensors currently in use. Because of their ability to see through the snowpack they offer a unique opportunity to improve snowpack measurement techniques. As yet neither the active nor passive system is developed sufficiently to supplant existing methods in operational telemetry networks. Active microwave sensors are the most promising for the near future and are being used in research and development programs to study snow pillow performance in the SNOTEL system.

Shafer, B. A.↗

NASA NTRS1994

A very low shock alternative to conventional, pyrotechnically operated release devices

NiTiNOL is best known for its ability to remember a preset shape, even after being 'plastically' deformed. This is accomplished by heating the material to an elevated temperature up to 120 degrees C. However, NiTiNOL has other material and mechanical properties that provide a novel method of structural release. This combination of properties allows NiTiNOL to be used as a mechanical fuse between structural components. When electrical power is applied to the NiTiNOL fuse(s), the material is annealed reducing the mechanical strength to a small fraction of the as-wrought material. The preload then fractures the weakened NiTiNOL fuse(s) and releases the structure. This paper describes the mechanical characteristics of the NiTiNOL allow used in this invention, structural separation design concepts using the NiTiNOL material, and initial test data. Elimination of the safety hazard, high shock levels, and non-reusability inherent with pyrotechnic separation devices allows NiTiNOL actuated release devices to become a viable alternative for aerospace components and systems.

Robinson, Steven P.↗

NASA NTRS1989

Theory Of A Pyrotechnically Driven Device

Report presents relations that predict behavior of pyrolytically operated device. Mathematical analysis motivated by need to evaluate performances of squib-driven release nuts. Analysis takes into account most significant of complicated interrelated processes involved in operation of pyrotechnically driven devices and aids in their design and evaluation of test data.

Richter, Robert↗

NASA NTRS2015

Design and Testing of a Small Inductive Pulsed Plasma Thruster

The design and testing of a small inductive pulsed plasma thruster (IPPT), shown in Fig. 1 with all the major subsystems required for a thruster of this kind are described. Thrust measurements and imaging of the device operated in rep-rated mode are presented to quantify the performance envelope of the device. The small IPPT described in this paper was designed to serve as a test-bed for the pulsed gas-valves and solid-state switches required for a IPPTs. A modular design approach was used to permit future modifications and upgrades. The thruster consists of the following sub-systems: a) a multi-turn, spiral-wound acceleration coil (27 cm o.d., 10 cm i.d.) driven by a 10 microFarad capacitor and switched with a high-voltage thyristor, b) a fast pulsed gas-valve, and c.) a glow-discharge pre-ionizer (PI) circuit. The acceleration-coil circuit may be operated at voltages up to 4 kV (the thyristor limit is 4.5 kV). The device may be operated at rep-rates up to 30 Hz with the present gas-valve. Thrust measurements and imaging of the device operated in rep-rated mode will be presented. The pre-ionizer consists of a 0.3 microFarad capacitor charged to 4 kV and connected to two annular stainless-steel electrodes bounding the area of the coil-face. The 4 kV potential is held across them and when the gas is puffed in over the coil, the PI circuit is completed, and a plasma is formed. Even at the less than optimal base-pressure in the chamber (approximately 5 × 10(exp −4) torr), the PI held-off the applied voltage, and only discharged upon command. For a capacitor charge of 2 kV the peak coil current is 4.1 kA, and during this pulse a very bright discharge (much brighter than from the PI alone) was observed (see Fig. 2). Interestingly, for discharges at this charge voltage the PI was not required as the current rise rate, dI/dt, of the coil itself was sufficient to ionize the gas.

Martin, Adam K.↗

DOE OSTI2020

Operando Microscopy Characterization of Perovskite Solar Cells

In this work, we developed operando Kelvin probe force microscopy (KPFM) to study the electrostatic potential distribution across perovskite cells under light and forward bias to gain a deeper understanding of device operation physics. As a case study, we selected perovskite cells with a SnO 2 -based electron-selective layer (ESL), which showed great potential for fabricating high-efficiency, hysteresis-free devices due to the deeper conduction band and higher electron mobility of SnO 2 . The as-made device showed a main junction at the perovskite/spiro interface. After light soaking and applying forward bias, the junction quality improved, possibly explained by filling trap states at the interfaces and by the perovskite absorber perhaps having a self-poling effect; the main junction is observed at the ESL/perovskite interface. The results are consistent with current-voltage measurements, device performance improves mainly with fill factor enhancement. The operando KPFM results should more closely reflect the real case during current density-voltage measurements or solar cell operation. The operando KPFM technique that we have developed can be a powerful tool to provide a deeper understanding of the device operation mechanism and to further optimize the device.

14 SOLAR ENERGY↗