Impact of Incorporation Kinetics on Device Fabrication with Atomic Precision
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Ivie, Jeffrey A.↗
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Results for “device fabrication”
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Influence of quantum-confined device fabrication on semiconductor-laser theory
Among Professor Arthur Gossard’s many contributions to crystal growth are those resulting in important improvements in the quality and performance of quantum-well and quantum-dot semiconductor lasers. In celebration of his 85th birthday, we review the development of a semiconductor laser theory that is motivated and guided, in part, by those advances. This theory combines condensed matter theory and laser physics to provide understanding at a microscopic level, i.e., in terms of electrons and holes, and their interaction with the radiation field while influenced by the lattice.
36 MATERIALS SCIENCE↗
Focused Ion Beams for Deterministic Nanometer-Scale Quantum Device Fabrication.
Abstract not provided.
Titze, Michael↗
2D Bipolar Devices – Fabrication, Metrology and Measurement
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Owen, J.H.G↗
Influence of device fabrication parameters on gradual degradation of /AlGa/As cw laser diodes
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Ladany, I.↗
Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication
Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates.
Powell, J. Anthony↗
Epoxy-based infrared filter assembly and associated fabrication devices and method
Epoxy-based inline infrared (IR) filter assembly, and manufacture and use of the same. Co-axial infrared filter assemblies comprise a substantially cylindrical filter body forming a central cavity characterized by opposing holes at each end. The filter body forms an outer conductor, and SMA connectors coupled to the opposing holes at each end of the body are electrically coupled to form an inner conductor positioned along a long axis of the filter body. An infrared absorbing material (such as castable epoxy resin) fills the central cavity of the filter body. Methods for producing the co-axial infrared filter include pressing SMA connectors into the respective ends of the filter body, electrically coupling the SMA connectors, and filling the filter body with epoxy. Electronic systems for operating a dark matter detector include a feedline comprising a coaxial filter configured to advantageously block infrared noise.
Spahn, Gabriel↗
Resistive Switching in SrFeO2.5/Nb:SrTiO3 Heterostructures with Growth-Controlled Film Orientation
Resistive switching, a behavior found in many oxide materials, has the potential to enable emerging computer hardware technologies and architectures. We present resistive switching devices fabricated from epitaxial brownmillerite SrFeO2.5 films with two distinct film orientations, wherein facile oxygen ion diffusion planes are aligned parallel (in-plane) and perpendicular (out-of-plane) with the electrodes. SrFeO2.5 films were grown on (001) oriented Nb:SrTiO3 to enable high-quality interfaces and future integration with Si CMOS technologies. Post-growth vacuum annealing and growth pressure were used to control film orientations, as confirmed by transmission electron microscopy and x-ray diffraction measurements. Films grown with diffusion planes oriented in-plane had oxygen-rich, perovskite-like nanodomains spread throughout the film, and fabricated devices exhibited worse switching consistency and more stochasticity. In contrast, films grown with diffusion planes oriented out-of-plane had a more uniform oxygen-rich perovskite interfacial layer above the bottom electrode, and devices built from this film orientation showed significant statistical improvements in switching voltages and cycling consistency.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Quantitative measurement of the "feel" of fabric
Device handle of fabric is a property related to flexibility, pliability, or compressibility. Technique requires extraction of flat circular sample of fabric through convergent nozzle.
Alley, V. L., Jr.↗
Silicon Solar Cell Fabrication Technology
Device fabrication and photoconductive lifetime decay measurements were used to characterize single and polycrystalline silicon substracts. The device characterization of the processed materials was done by spectral response measurements and absolute quantum efficiency at a single wavelength. The results were then reduced to yield the diffusion length of the various samples. The photoconductive lifetime decay method was implemented in order to determine the minority carrier lifetime in unprocessed wafers.
Stafsudd, O. M.↗
Method for fabricating semiconductor devices
A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.
Kaiser, William J.↗
Flexible thermal device
Fabrication of expansion joint, vibration isolator device with sufficient cross sectional area for high thermal conductivity is discussed. Device consists of multiple layers of metal foil which may be designed to meet specific applications. Thermodynamic properties of the device and illustration of construction are provided.
Wallace, S. D.↗
Method of fabricating photosensitive devices with reduced process-temperature budget
A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices.
Kay, Randolph R.↗
Methods and devices for fabricating and assembling printable semiconductor elements
The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.
Nuzzo, Ralph G.↗
Cadmium Selective Etching in CdTe Solar Cells Produces Detrimental Narrow-Gap Te in Grain Boundaries
Recent advances in design and processing technology have made possible commercialization of polycrystalline (px)-CdTe as a photovoltaic absorber. Grain boundaries (GBs) are the most prominent structural defects in these devices and undergo significant changes during device fabrication. However, the effects of device fabrication processes on these GBs are not entirely understood. Prevailing models of GBs in thin-film photovoltaics consider individual GBs to have homogeneous properties in their area. Here, using an aberration-corrected scanning transmission electron microscope (STEM)-based low-loss and core-loss electron energy-loss spectroscopy (EELS), we show that back-surface etching of CdTe leads to inhomogeneity within individual grain boundaries. We observe that etching the back surface leads to the conversion of a region of GBs from CdTe to an elemental Te, which has an only 0.33 eV band gap, as deep as 1 μm from the back surface. The presence of elemental Te in GBs this deep into the absorber layer will increase recombination in the absorber layer and limit the extractable open-circuit voltage, thus reducing device efficiency. However, additive methods for back contact formation such as deposition of Te, ZnTe, or other materials preserve the CdTe stoichiometry of the GBs. Thus, especially for the next generations of CdTe-based cells having longer minority carrier diffusion length and/or thinner absorber layers, additive back contacting methods are superior.
36 MATERIALS SCIENCE↗
Templates for Fabricating Nanowire/Nanoconduit-Based Devices
An effort is underway to develop processes for making templates that could be used as deposition molds and etching masks in the fabrication of devices containing arrays of nanowires and/or nanoconduits. Highly-ordered, optical-fiber arrays consisting of dissimilar polymers comprise the template technology. The selective removal of the fiber cores in specific solvents creates the porous templates to be filled with a "top-down" deposition process such as electrochemical deposition, sputter deposition, molecular beam epitaxy, and the like. Typically, the fiber bundles consist of polystyrene (PS) fiber cores, which are clad with varying thickness poly(methyl methacrylate) (PMMA). When arranged in hexagonal, close-packed configuration and pulled, the fibers form highly-ordered arrays comprised of PS fiber cores surrounded by a continuous matrix of PMMA. The ratio of PMMA cladding thickness to PS core diameter determines the spacing between PS fiber cores and typically ranges from 3:1 to 1:1. Essentially, the simultaneous heating and drawing or pulling in the longitudinal direction of polymer-fiber arrays fuses the fibers together.
Sakamoto, Jeffrey↗
Low-leakage regrown GaN p-n junctions for GaN power devices
Fabricating a regrown GaN p-n junction includes depositing a n-GaN layer on a substrate including n + -GaN, etching a surface of the n-GaN layer to yield an etched surface, depositing a p-GaN layer on the etched surface, etching a portion of the n-GaN layer and a portion of the p-GaN layer to yield a mesa opposite the substrate, and passivating a portion of the p-GaN layer around an edge of the mesa. The regrown GaN p-n junction is defined at an interface between the n-GaN layer and the p-GaN layer. The regrown GaN p-n junction includes a substrate, a n-GaN layer on the substrate having an etched surface, a p-GaN layer on the etched surface, a mesa defined by an etched portion of the n-GaN layer and an etched portion of the p-GaN layer, and a passivated portion of the p-GaN layer around an edge of the mesa.
Zhao, Yuji↗
Silyl Hot-Injection Versus Thiocyanate Heat-Up Synthesis of Chalcohalides: Pushing the Size and Composition Envelope
Chalcohalide semiconductors are rapidly gaining traction as stable, biocompatible materials for energy conversion applications. While the solid-state synthesis of bulk chalcohalides is relatively well-developed, the colloidal chemistry of these materials is still in its early stages. Colloidal semiconductors are often advantageous in device fabrication due to the cost effectiveness of solution processing. Thus, we aim to increase the utility of chalcohalides in device fabrication by establishing solution phase chemistry of promising compositions. We show that silyl hot-injection is a versatile and effective method of making colloidal PnChI (Pn = Sb, Bi; Ch = S, Se) and Sn 2 PnS 2 I 3 (Pn = Sb, Bi) chalcohalides of tunable sizes and compositions. Furthermore, we demonstrate the preparation of mixed-pnictide chalcohalides through direct hot-injection and/or postsynthetic cation exchange, the latter being one of the few reported instances in chalcohalides. Additionally, we use the thiocyanate heat-up approach in combination with density functional theory to study halide mixing in quaternary tin chalcohalides. By pushing the limits of each synthetic technique, we have designed more soluble chalcohalides with tunable compositions while also gaining a better understanding of the efficacy of each procedure in respect to thin film and subsequent device fabrication. In addition to size and composition tuning, silyl hot-injection can help facilitate the future development and wide-scale application of chalcohalide-based devices by expanding the selection of solution-processable chalcohalides.
halogens↗