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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Investigations in the tape-to-tape contact resistance and contact composition in superconducting CORC ® wires

Conductor on Round Core (CORC®) wires and cables, constructed from multiple layers of helically wound REBa 2 Cu 3 O 7–δ tapes, are a promising cable technology for high field magnet applications. An important feature of high-temperature superconductor cables is the ability to share current between conductors, allowing current to bypass drops in I c and minimizing the risk of hot spot formation, which could lead to potential burnout in the superconductor. In contrast to stacked-tape cables, which have continuous contact between tapes, in CORC® the transfer points occur at discrete tape crossovers. The tape-to-tape contact resistance, R c , plays a critical role in the current sharing capabilities and current distribution in cables. For the work reported here, special CORC® wires were manufactured using different winding parameters to investigate variations in R c . Variations comprised inclusion of a lubricant, different lubricant conductivity, inclusion of pre-tinning, and heating briefly to melt the solder. Cables were first tested as straight lengths, followed by bending to a 10 cm diameter. In straight cables R c values ranged from 1 to over 1000 μΩ cm 2 , depending on cabling parameters, with the highest values being found for cables made by the present 'standard' process. Bending the cables to a 10 cm diameter decreased R c by a factor 2–5. Tinning with PbSn decreased R c by three orders of magnitude compared to standard CORC® wires, and heat treating wires with tinned conductor resulted in only a small further decrease in R c . Based on the measured R c at an electric field of 1 μV cm –1 the resulting current transfer length between layers can range from a few millimeters to a tens of centimeters. Examination of contacts with a laser confocal microscope showed plastic deformation of the copper at the edges of the contact overlap area, apparently caused by thicker plating at tape edges digging into the copper of neighboring layers. These images reveal that only a fraction of the total contact surface may actually be touching when there is nothing to compensate for height differential. Images of the PbSn coated tapes indicated that application of solder produces a much more uniform contact surface and higher contact area. Furthermore, imaging of CORC® cross-sections confirmed that in the non-tinned cables there are many regions where tapes are not in contact, while in contrast the PbSn cable shows significantly more contact between the tapes. These different imaging techniques reveal that tape surface morphology is a significant parameter in determining R c .

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2015

Experimental investigation on the electrical contact behavior of rolling contact connector

Rolling contact connector (RCC) is a new technology utilized in high performance electric power transfer systems with one or more rotating interfaces, such as radars, satellites, wind generators, and medical computed tomography machines. Rolling contact components are used in the RCC instead of traditional sliding contacts to transfer electrical power and/or signal. Since the requirement of the power transmission is increasing in these years, the rolling electrical contact characteristics become more and more important for the long-life design of RCC. In this paper, a typical form of RCC is presented. A series of experimental work are carried out to investigate the rolling electrical contact characteristics during its lifetime. The influence of a variety of factors on the electrical contact degradation behavior of RCC is analyzed under both vacuum and air environment. Based on the surface morphology and elemental composition changes in the contact zone, which are assessed by field emission scanning electron microscope and confocal laser scanning microscope, the mechanism of rolling electrical contact degradation is discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Ion Implanted Passivated Contacts for Interdigitated Back Contacted Solar Cells

We describe work towards an interdigitated back contacted (IBC) solar cell utilizing ion implanted, passivated contacts. Formation of electron and hole passivated contacts to n-type CZ wafers using tunneling SiO2 and ion implanted amorphous silicon (a-Si) are described. P and B were ion implanted into intrinsic amorphous Si films at several doses and energies. A series of post-implant anneals showed that the passivation quality improved with increasing annealing temperatures up to 900 degrees C. The recombination parameter, Jo, as measured by a Sinton lifetime tester, was Jo ~ 14 fA/cm2 for Si:P, and Jo ~ 56 fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts, as measured by TLM patterns, was 14 milliohm-cm2 for the n-type contact and 0.6 milliohm-cm2 for the p-type contact. These Jo and pcontact values are encouraging for forming IBC cells using ion implantation to spatially define dopants.

14 SOLAR ENERGY↗
DOE OSTI2023

Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application

Here, this paper presents detailed characterization and analyses of the optical, electrical, and contact properties of a 35 nm phosphorus-doped (n-type) polysilicon (poly-Si) and a 250 nm boron-doped (p-type) poly-Si deposited respectively on textured and roughed surface. These layers could be applied respectively to the front and rear sides of an n-type Si to produce back junction bifacial screen-printed double-side tunnel oxide passivated contacts (DS-TOPCon) solar cells. Optical and device modeling revealed a short circuit current density loss of 1.5 mA/cm 2 and 0.5 mA/cm 2 due to absorption in the front n-TOPCon and rear side p-TOPCon layers, respectively. The passivation and contact properties including metalized and unmetallized recombination current density (J 0 ), as well as contact resistivity, were determined as a function of contact firing temperature in the range of 700~800°C. The passivation quality of the front thin n-TOPCon was found to deteriorate with increased firing temperature while the rear thick p-TOPCon improved. The study showed that the simulated contact firing at 730°C resulted in the best unmetallized double-side TOPCon precursor, with an excellent implied open-circuit voltage of 730 mV and implied fill factor of ~86 %. However, the metalized J0 increased and contact resistivity decreased monotonically with the increase in the firing temperature. The 2D device simulations revealed that these layers can produce screen-printed DS-TOPCon cells with an efficiency of ~22.5 %. Solar cell modeling also showed that the DS-TOPCon solar cell efficiency can reach 24.1 % by decreasing the n-TOPCon thickness to 20 nm and lowering the full area metalized J 0 to ~100 mA/cm 2 .

14 SOLAR ENERGY↗
DOE OSTI2023

A New Method for the Evaluation of Majority and Minority Carrier Contact Resistivity of Polysilicon on Oxide Contacts

In this contribution we present a novel technique for characterizing the majority and minority carrier contact resistivity in polysilicon on oxide passivating contacts. Traditionally, contact resistivity is measured through the Transfer Length Method (TLM). This method presents difficulties when measuring the minority carrier contact due to the presence of a blocking diode which prevents current flow between the pads. Our novel method is performed by creating a unipolar device which has the same contact on both sides (either symmetric n-type or symmetric p-type) and metalizing the device with a grid on one side, and a full metal contact on the back (the same pattern that will be used in a final cell). We then measure the resistance across the device at increasing illumination. Since the resistivity of the wafer is a function of carrier density, when increasing illumination, the wafer resistivity decreases. We can then fit modeling equations to the measured resistivity and extrapolate the fit to infinite illumination where only the contact resistivity is measured to accurately measure both the minority and majority carrier contact resistivity.

current measurement↗
NASA NTRS1980

Effect of load, area of contact, and contact stress on the wear mechanisms of a bonded solid lubricant film

A pin on disk type of friction and wear apparatus was used to study the effect of load, contact stress and rider area of contact on the friction and wear properties of polyimide bonded graphite fluoride films. Different rider area contacts were obtained by initially generating flats (with areas of 0.0035, 0.0071, 0.0145, and 0.0240 cm) on 0.476-cm radius hemispherically tipped riders. Different projected contact stresses were obtained by applying loads of 2.5- to 58.8-N to the flats. Two film wear mechanisms were observed. The first was found to be a linear function of contact stress and was independent of rider area of contact. The second was found to increase exponentially as the stress increased. The second also appeared to be a function of rider contact area. Wear equations for each mechanism were empirically derived from the experimental data. In general, friction coefficients increased with increasing rider contact area and with sliding duration. This was related to the build up of thick rider transfer films.

Fusaro, R. L.↗
NASA NTRS1981

Effect of load, area of contact, and contact stress on the tribological properties of polyimide bonded graphite fluoride films

A pin-on-disk type of friction and wear apparatus was used to study the effect of load, contact stress and rider area of contact on the friction and wear properties of polyimide-bonded graphite fluoride films. Different rider area contacts were obtained by initially generating flats (with areas of 0.0035, 0.0071, 0.0145, and 0.0240 cm) on 0.476-cm radius hemispherically-tipped riders. Different projected contact stresses were obtained by applying loads of 2.5-to 58.8-N to the flats. Two film wear mechanisms were observed. The first was found to be a linear function of contact stress and was independent of rider area of contact. The second was found to increase exponentially as the stress increased. The second also appeared to be a function of rider contact area. Wear equations for each mechanism were empirically derived from the experimental data. In general, friction coefficients increased with increasing rider contact area and with sliding duration. This was related to the build-up of thick rider transfer films.

Fusaro, R. L.↗
DOE OSTI2016

Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact

Carrier selective passivated contacts composed of thin oxide, n + polycrystalline Si and metal on top of a n-Si absorber can significantly lower the recombination current density (J orear ≤8 fA/cm 2 ) under the contact while providing excellent specific contact resistance (5–10 mΩ-cm 2 ); 25.1% efficient small area cells with photolithography front contacts on boron doped selective emitter and Fz wafers have been achieved by Fraunhofer ISE using their tunnel oxide passivated contact (TOPCon) approach. This paper shows a methodology to model such passivated contact cells using Sentaurus device model, which involves replacing the TOPCon region by carrier selective electron and hole recombination velocities to match the measured J orear of the TOPCon region as well as all the light IV values of the cell. We first validated the methodology by modeling a 24.9% reference cell. The model was then extended to assess the efficiency potential of large area TOPCon cells on commercial grade n-type Cz material with screen-printed front contacts. To use realistic input parameters, a 21% n-type PERT cell was fabricated on Cz wafer (5 Ω-cm, 1.5-ms lifetime). Modeling showed that the cell efficiency will improve to only 21.6% if the back of this cell is replaced by the above TOPCon, and the performance is limited by the homogenous emitter. Efficiency was then modeled to improve to 22.6% with the implementation of selective emitter (150/20 Ω/sq). Lastly, it is shown that screen printing of 40-µm-wide lines and improved bulk material (10 Ω-cm, 3-ms lifetime) can raise the single side TOPCon Cz cell efficiency to 23.2%.

14 SOLAR ENERGY↗
DOE OSTI2018

Novel hole selective CrOx contact for dopant-free back contact silicon solar cells

Highlights: • The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrO{sub x}, x • CrO{sub x} is first applied in silicon based solar cell as the emitter. • The back contact solar cell which demonstrated an efficiency of 15.8% and high stability was fabricated, by implementing the multilayer films of CrO{sub x} (5 nm)/Au (4 nm)/ CrO{sub x} (5 nm) capped by Ag (500 nm) as the emitter. - Abstract: The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrO{sub x}, x x is first applied in silicon based solar cell as the emitter. Integrating 5 nm CrO{sub x} and 2 nm LiF{sub x} into solar cell as the emitter and the back surface filed, resulted in a device efficiency of 13.6%. For further improvement, the back contact solar cell reaching an efficiency of 15.8% was fabricated, by implementing the multilayer films of CrO{sub x} (5 nm)/Au (4 nm)/ CrO{sub x} (5 nm) as the emitter. The formation of Cr(OH){sub 3} in ambient condition, resulted in a lower work function (4.8 eV) of the CrO{sub x} film. Furthermore, the multilayer back contact solar cell demonstrated a high stability due to CrO{sub x} covered with 500 nm Ag, when stored in ambient air longer than 170 days.

14 SOLAR ENERGY↗
DOE OSTI2015

Evaluation of the electrical contact area in contact-mode scanning probe microscopy

The tunneling current through an atomic force microscopy (AFM) tip is used to evaluate the effective electrical contact area, which exists between tip and sample in contact-AFM electrical measurements. A simple procedure for the evaluation of the effective electrical contact area is described using conductive atomic force microscopy (C-AFM) in combination with a thin dielectric. We characterize the electrical contact area for coated metal and doped-diamond tips operated at low force (<200 nN) in contact mode. In both cases, we observe that only a small fraction (<10 nm{sup 2}) of the physical contact (∼100 nm{sup 2}) is effectively contributing to the transport phenomena. Assuming this reduced area is confined to the central area of the physical contact, these results explain the sub-10 nm electrical resolution observed in C-AFM measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySi was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (R{sub sh n-type} = 95 Ω/□ and R{sub sh p-type} = 120 Ω/□). An efficiency of 19.2% (V{sub oc} = 673 mV, J{sub sc} = 38.0 mA/cm{sup 2}, FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a V{sub OC} of 696 mV was also measured.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Investigation of Contact Properties and Device Performance for Bifacial Double-Side Textured Silicon Solar Cells With Polysilicon Based Passivating Contacts

We investigate the impact of the surface morphology on the contact properties of phosphorus doped poly-Si layers. If the poly-Si layer on a textured surface remains intact after high-temperature metallization using a fire-through (FT) silver (Ag) paste, the J0,metal is not expected to increase significantly while the specific contact resistivity can improve with a textured surface. The contact properties of the FT Ag contacts to n+ poly-Si deposited on both textured and planar surfaces are investigated by measuring and evaluating ρc and J0,metal. The reasons for differences in contact resistance and recombination are further investigated with SEM imaging. Solar cells with n-type polysilicon based passivating contacts on the rear side are fabricated and characterized. The scientific approach used, and the insights presented in this work, help to understand the mechanisms and behavior of screen-printed and fired-through contacts to polysilicon layers deposited onto textured silicon surfaces.

Padhamnath, Pradeep (ORCID:0000000202510624)↗
NASA NTRS1991

Improvements in contact resistivity and thermal stability of Au-contacted InP solar cells

Specific contact resistivities for as-fabricated Au contacts on n-p InP solar cells are typically in the 10(exp -3) ohm/sq cm range, but contact resistivities in the 10(exp -6) ohm/sq cm range can be obtained if the cells are heat treated at 400 C for a few minutes. This heat treatment, however, results in a dramatic drop in the open circuit voltage of the cell due to excessive dissolution of the emitter into the metallization. It was found that low values of contact resistivity can be secured without the accompanying drop in the open circuit voltage by adding Ga and In in the Au metallization. It is shown that Au contacts containing as little as 1 percent atomic Ga can suppress the reaction that takes place at the metal-InP interface during heat treatment, while exhibiting contact resistivity values in the low 10(exp -5) ohm/sq cm. Detailed explanations for the observed superior thermal stability of these contacts are presented.

Fatemi, Navid S.↗
NASA NTRS1995

Contact position sensor using constant contact force control system

A force control system (50) and method are provided for controlling a position contact sensor (10) so as to produce a constant controlled contact force therewith. The system (50) includes a contact position sensor (10) which has a contact probe (12) for contacting the surface of a target to be measured and an output signal (V.sub.o) for providing a position indication thereof. An actuator (30) is provided for controllably driving the contact position sensor (10) in response to an actuation control signal (I). A controller (52) receives the position indication signal (V.sub.o) and generates in response thereto the actuation control signal (I) so as to provide a substantially constant selective force (F) exerted by the contact probe (12). The actuation drive signal (I) is generated further in response to substantially linear approximation curves based on predetermined force and position data attained from the sensor (10) and the actuator (30).

Sturdevant, Jay↗
DOE OSTI2020

Hydrodynamics of countercurrent flows in a structured packed column: effects of initial wetting and dynamic contact angle

The structured packed column has gained considerable attention as a prospective technology to mitigate carbon dioxide emissions from thermal power plants. The computational flow investigation of such systems is a multiscale problem, and local hydrodynamics plays a key role in overall column efficiency. Accordingly, multiphase flow studies in the representative elementary unit (REU) of a packed column can offer insights into the local flow behavior such as flow pattern, interfacial area, etc. The interfacial area plays a key role in the overall interphase mass transfer and thereby in separation efficiency. The predicted effective area matches well with corresponding ones in experiments for Mellapak 250.Y packings. The contact angle (i.e., solid substrate behavior) is one of the critical factors that dictates wettings, and thereby the interfacial area. The dynamic contact angle (DCA) was considered in order to explore the effects of contact angle hysteresis on the interfacial area. DCA has more pronounced impact on the interfacial area for a solvent possessing a higher value of surface tension and equilibrium contact angle. The interfacial area shows temporal undulation and does not achieve a pseudo steady state due to the capillary force. In contrary, the interfacial area gets a net value for a solvent having low surface tension value. Further, specification of the static contact angle at the solid substrate shows the least value of the interfacial area. We also extensively studied the effect of the initial sheet condition (dry vs wet) on the interfacial area. The initially wetted sheets show slightly higher value of the interfacial area as compared to the initially dry sheets at a fixed flow rate for a solvent having high surface tension value. Wetting hysteresis decreases with increasing liquid loads. On the other hand, wetting hysteresis does not occur for a solvent having value of low surface tension and equilibrium contact angle.

structured packings, dynamic contact angle, interf↗