Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “chern insulators”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

Even–Odd Layer-Dependent Exchange Bias Effect in MnBi 2 Te 4 Chern Insulator Devices

Magnetic topological materials with coexisting magnetism and nontrivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi 2 Te 4 show fascinating even–odd layer-dependent physics. Here, in this work, we fabricate a series of thin-flake MnBi 2 Te 4 devices using stencil masks and observe the Chern insulator state at high magnetic fields. Upon magnetic field training, a large exchange bias effect is observed in odd but not in even septuple layer (SL) devices. Through theoretical calculations, we attribute the even–odd layer-dependent exchange bias effect to the contrasting surface and bulk magnetic properties of MnBi 2 Te 4 devices. Our findings reveal the microscopic magnetic configuration of MnBi 2 Te 4 thin flakes and highlight the challenges in replicating the zero magnetic field quantum anomalous Hall effect in odd SL MnBi 2 Te 4 devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Quantum-metric-induced quantum Hall conductance inversion and reentrant transition in fractional Chern insulators

The quantum metric of single-particle wave functions in topological flat bands plays a crucial role in determining the stability of fractional Chern insulating (FCI) states. Here, we unravel that the quantum metric causes the many-body Chern number of the FCI states to deviate sharply from the expected value associated with partial filling of the single-particle topological flat band. Furthermore, the variation of the quantum metric in momentum space induces band dispersion through interactions, affecting the stability of the FCI states. This causes a reentrant transition into the Fermi liquid from the FCI phase as the interaction strength increases. Published by the American Physical Society 2024

Wu, Ang-Kun (ORCID:0000000270181674)↗

Towards Floquet Chern insulators of light

Topological photonics explores photonic systems that exhibit robustness against defects and disorder, enabled by protection from underlying topological phases. These phases are typically realized in linear optical systems and characterized by their intrinsic photonic band structures. Here we experimentally study Floquet Chern insulators in periodically driven nonlinear photonic crystals, where the topological phase is controlled by the polarization and the frequency of the driving field. Our transient sum-frequency generation measurements reveal strong hybridization of the Floquet photonic bands. The measured spectrum remains gapless under a linearly polarized drive but becomes gapped under a circularly polarized drive. Theoretical analysis confirms that the Floquet gap is topological, characterized by a non-zero Chern number—a consequence of time-reversal symmetry breaking induced by the circularly polarized driving field. Furthermore, this work offers opportunities to explore the role of classical optical nonlinearity in topological phases and their applications in nonlinear optoelectronics.

36 MATERIALS SCIENCE↗

Local probe of bulk and edge states in a fractional Chern insulator

The fractional quantum Hall effect is a key example of topological quantum many-body phenomena, arising from the interplay between strong electron correlation, topological order and time-reversal symmetry breaking. Recently, a lattice analogue of the fractional quantum Hall effect at zero magnetic field has been observed, confirming the existence of a zero-field fractional Chern insulator (FCI). Despite this, the bulk–edge correspondence—a hallmark of a FCI featuring an insulating bulk with conductive edges—has not been directly observed. In fact, this correspondence has not been visualized in any system for fractional states owing to experimental challenges. Here we report the imaging of FCI edge states in twisted MoTe 2 (t-MoTe 2 ) using microwave impedance microscopy. By tuning the carrier density, we observe the system evolving between metallic and FCI states, the latter of which exhibits insulating bulk and conductive edges, as expected from the bulk–boundary correspondence. Further analysis suggests the composite nature of the FCI edge states. We also observe the evolution of edge states across the topological phase transition as a function of interlayer electric field and reveal exciting prospects of neighbouring domains with different fractional orders. Furthermore, these findings pave the way for research into topologically protected one-dimensional interfaces between various anyonic states at zero magnetic field, such as gapped one-dimensional symmetry-protected phases with non-zero topological entanglement entropy, Halperin–Laughlin interfaces and the creation of non-abelian anyons.

Imaging techniques↗

Polaritonic Chern Insulators in Monolayer Semiconductors

Systems with strong light-matter interaction open up new avenues for studying topological phases of matter. Examples include exciton polaritons, mixed light-matter quasiparticles, where the topology of the polaritonic band structure arises from the collective coupling between matter wave and optical fields strongly confined in periodic dielectric structures. Distinct from light-matter interaction in a uniform environment, the spatially varying nature of the optical fields leads to a fundamental modification of the well-known optical selection rules, which were derived under the plane wave approximation. Here, in this study, we identify polaritonic Chern insulators by coupling valley excitons in transition metal dichalcogenides to photonic Bloch modes in a dielectric photonic crystal slab. We show that polaritonic Dirac points, which are markers for topological phase transition points, can be constructed from the collective coupling between valley excitons and photonic Dirac cones in the presence of both time-reversal and inversion symmetries. Lifting exciton valley degeneracy by breaking time-reversal symmetry leads to gapped polaritonic bands with nonzero Chern numbers. Through numerical simulations, we predict polaritonic chiral edge states residing inside the topological gaps. Our Letter paves the way for the further study of strong exciton-photon interaction in nanophotonic structures and for exploring polaritonic topological phases and their practical applications in polaritonic devices.

74 ATOMIC AND MOLECULAR PHYSICS↗

Altermagnetism Induced Surface Chern Insulator

We propose a new pathway to the quantized anomalous Hall effect (QAHE) by coupling an altermagnet to a topological crystalline insulator (TCI). The former gaps the topological surface states of the TCI, thereby realizing the QAHE in a robust and switchable platform with near-vanishing magnetization. We demonstrate the feasibility of this approach by studying a slab of the TCI SnTe coupled to an altermagnetic RuO 2 layer. Our first-principles calculations reveal that the d-wave altermagnetism in RuO 2 induces a 7 meV gap to the Dirac surface states on the (110) surface of SnTe, producing a finite anomalous Hall effect. Our approach generalizes to broader classes of altermagnetic materials and TCIs, thereby providing a family of topological altermagnetic heterostructures with small or vanishing magnetization that support nontrivial Chern numbers. In conclusion, our results highlight a promising new topological platform with great tunability and applications to spintronics.

36 MATERIALS SCIENCE↗