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At least 37 records · Page 2

Charge-trap analysis in a SENSEI skipper-CCD: Understanding low-energy backgrounds in rare-event searches

Skipper charge-coupled devices (CCDs) are ultralow-threshold detectors capable of detecting energy deposits in silicon at the electronvolt scale. Skipper CCDs are increasingly used in rare-event searches, including experiments such as SENSEI, DAMIC-M, Oscura, and CONNIE, where one of the major challenges is mitigating low-energy backgrounds. In this work, we present results on trap characterization in a silicon skipper-CCD produced in the same fabrication run as the SENSEI experiment at SNOLAB. Lattice defects contribute to backgrounds in rare-event searches through single-electron charge trapping. To investigate this, we use the charge-pumping technique at different temperatures to identify dipoles produced by traps in the CCD channel. We fully characterize a fraction of these traps and use this information to extrapolate their contribution to the single-electron background in SENSEI. We find that this subpopulation of traps does not contribute significantly, but more work is needed to assess the impact of the traps that cannot be characterized.

Brusco, Agustin

Charge Trap Analysis in a SENSEI Skipper-CCD: Understanding Low-Energy Backgrounds in Rare-Event Searches

Skipper Charge-Coupled Devices (Skipper-CCDs) are ultra-low-threshold detectors capable of detecting energy deposits in silicon at the eV scale. Increasingly used in rare-event searches, one of the major challenges in these experiments is mitigating low-energy backgrounds. In this work, we present results on trap characterization in a silicon Skipper-CCD produced in the same fabrication run as the SENSEI experiment at SNOLAB. Lattice defects contribute to backgrounds in rare-event searches through single-electron charge trapping. To investigate this, we employ the charge-pumping technique at different temperatures to identify dipoles produced by traps in the CCD channel. We fully characterize a fraction of these traps and use this information to extrapolate their contribution to the single-electron background in SENSEI. We find that this subpopulation of traps does not contribute significantly but more work is needed to assess the impact of the traps that can not be characterized.

Brusco, Agustin [Buenos Aires U.]

Machine Learning for Predictive Performance Analysis in Charged Particle Beam Tools

Imaging methods driven by probes, electrons, and ions have played a dominant role in modern science and engineering. Opportunities for machine vision and AI that focus on consumer problems like driving and feature recognition, are now presenting themselves for automating aspects of the scientific processes. This proposal aims to enable and drive discovery in ultra-low energy implantation by taking advantage of faster processing, flexible control and detection methods, and architecture-agnostic workflows that will result in higher efficiency and shorter scientific development cycles. Custom microscope control, collection and analysis hardware will provide a framework for conducting novel in situ experiments revealing unprecedented insight into surface dynamics at the nanoscale. Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms of energy, ion species, and positional precision. Here we demonstrate 1 keV focused ion beam Au implantation into Si and validate the results via atom probe tomography. We show the Au implant depth at 1 keV is 0.8 nm and that identical results for low energy ion implants can be achieved by either lowering the column voltage, or decelerating ions using bias – while maintaining a sub-micron beam focus. We compare our experimental results to static calculations using SRIM and dynamic calculations using binary collision approximation codes TRIDYN and IMSIL. A large discrepancy between the static and dynamic simulation is found that is due to lattice enrichment with high stopping power Au and surface sputtering. Additionally, we demonstrate how model details are particularly important to the simulation of these low-energy heavy-ion implantations. Finally, we discuss how our results pave a way to much lower implantation energies, while maintaining high spatial resolution.

47 OTHER INSTRUMENTATION

Insights into the interaction of nitrobenzene and the Ag(111) surface: A DFT study

Here, this study explores the potential of nitrobenzene as an anolyte material for nonaqueous redox flow batteries (RFBs) by theoretically examining its low-coverage adsorption behavior on neutral and charged Ag(111) model electrode surfaces. At the low coverage limit, DFT calculations show a preference for nitrobenzene to adsorb parallel to the surface, with the benzene ring and nitro group centered over HCP sites. Interactions between nitrobenzene and the surface were analyzed using induced charge density analysis, Bader charge analysis, and projected density of states (PDOS). It was found that nitrobenzene adsorbs primarily through van der Waals interactions with the surface. As nitrobenzene accumulates negative charge, the strength of adsorption diminishes. Understanding the electrode-electrolyte interface is crucial for enhancing RFB electrochemical performance, and this study sheds light on nitrobenzene's interaction with a model Ag electrode.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH

Intermolecular Interactions in Direct Air Capture Materials: Insights from Charge Density Analysis

Direct air capture (DAC) materials enable the removal of CO 2 from the atmosphere, but improving their efficiency requires a detailed understanding of the intermolecular interactions that govern CO 2 sorption and release. Here, we present an experimental electron density study of methylglyoxal-bis(iminoguanidine) (MGBIG), a promising DAC material, using high-resolution X-ray and neutron diffraction data combined with quantum crystallographic analysis. This approach bridges theoretical and experimental data by quantifying electron density distributions and revealing how hydrogen bonds stabilize CO 2 -derived carbonate phases and may influence the desorption behavior. We identify distinct hydrogen-bonding environments in two crystalline carbonate phases: P1, a transient kinetic product, and P3, a thermodynamically stable phase. Multipolar refinement and electrostatic potential and multipole moment calculations precisely map electron density distributions, revealing key hydrogen bonds involved in CO 2 capture. Topological analysis of electron density highlights a cooperative hydrogen-bonding network in the thermodynamically favored P3 phase, where enhanced electron density delocalization and water-mediated interactions contribute to a more stable lattice. Energetic analyses confirm that stronger hydrogen bonding networks enhance the stability of P3 with a binding energy of −607.0 kJ/mol and greater lattice stability (−847.3 kJ/mol) compared to P1 (−302.5 and −571.0 kJ/mol, respectively). Electrostatic potential maps further illustrate polarization patterns that may influence the stability of the binding of CO 2 and release conditions. These findings establish a direct experimental framework for linking electron density distributions to intermolecular interactions in DAC materials, providing a rational design strategy for optimizing sorbents with improved CO 2 capture efficiency and reduced energy demands.

Electron density

Three-dimensional analysis of charging events on days 87 and 114, 1979, from SCATHA

Angular distributions of ions and electrons from the Spacecraft Charging at High Altitudes (SCATHA) were investigated for the floating potential and the differential charging of the spacecraft as deduced from Liouville's theorem. The following was found: (1) short time charging events on the spacecraft are associated with short time increases of the intensity of 10 keV to 1 MeV electrons; (2) short time changes of the spacecraft differential potential are associated with simultaneous short time changes of the spacecraft floating potential; (3) solar UV intensities in penumbra anticorrelate with the spacecraft floating potentials; (4) NASCAP predicts correct forms of sunshade asymmetric surface potentials; (5) certain enhancements of the intensity of energetic ions diminishes the absolute value of the spacecraft surface potential; (6) spacecraft discharging events in times shorter than 20 sec did not change in the spectrum of the energetic plasma; (7) partial discharging of the spacecraft occurred upon entry into a magnetically depleted region; and (8) steady state potentials and transient potentials of duration less than 30 seconds are simulated by the NASCAP code.

Saflekos, N. A.

A new analysis of charge transfer and polarization for ligand-metal bonding - Model studies of Al4CO and Al4NH3

The nature of the bonding of CO and NH3 ligands to Al is analyzed, and the intra-unit charge polarization and inter-unit donation for the interaction of ligands with metals are studied. The consequences of metal-to-ligand and ligand-to-metal charge transfer are separately considered by performing a constrained space orbital variation (CSOV) with the electrons of the metal member of the complex in the field of frozen ligand. The electrons of the metal atoms are then frozen in the relaxed distribution given by the CSOV SCF wave function and the ligand electrons are allowed to relax. Quantitative measures of the importance of inter-unit charge transfers and intra-unit polarization are obtained using results of SCF studies of Al4CO and Al4NH3 clusters chosen to simulate the adsorption of the ligands at an on-top side of the Al(111) surface. The electrostatic attraction of the effective dipole moments of the metal and ligand units makes an important contribution to the bond.

Bagus, P. S.

Chemical analysis of charged Li/SO(sub)2 cells

The initial focus of the program was to confirm that charging can indeed result in explosions and constitute a significant safety problem. Results of this initial effort clearly demonstrated that cells do indeed explode on charge and that charging does indeed constitute a real and severe safety problem. The results of the effort to identify the chemical reactions involved in and responsible for the observed behavior are described.

Subbarao, S.

Phase-space analysis of charged and optical beam transport: Wigner rotation angle

The possibility of using the phase space formalism to establish a correspondence between the dynamical behavior of squeezed states and optical or charged beams, propagating through linear systems, has received a great deal of attention during the last years. In this connection, it has been indicated how optical experiments may be conceived to measure the Wigner rotation angle. In this paper we address the topic within the context of the paraxial propagation of optical or charged beams and suggest a possible experiment for measuring the Wigner angle using an electron beam passing through quadrupoles and drift sections. The analogous optical system is also discussed.

Dattoli, G.

Quantitative Analysis of Charge Injection and Discharging of Si Nanocrystals and Arrays by Electrostatic Force Microscopy

NASA requirements for computing and memory for microspacecraft emphasize high density, low power, small size, and radiation hardness. The distributed nature of storage elements in nanocrystal floating-gate memories leads to intrinsic fault tolerance and radiation hardness. Conventional floating-gate non-volatile memories are more susceptible to radiation damage. Nanocrystal-based memories also offer the possibility of faster, lower power operation. In the pursuit of filling these requirements, the following tasks have been accomplished: (1) Si nanocrystal charging has been accomplished with conducting-tip AFM; (2) Both individual nanocrystals on an oxide surface and nanocrystals formed by implantation have been charged; (3) Discharging is consistent with tunneling through a field-lowered oxide barrier; (4) Modeling of the response of the AFM to trapped charge has allowed estimation of the quantity of trapped charge; and (5) Initial attempts to fabricate competitive nanocrystal non-volatile memories have been extremely successful.

Bell, L. D.

Investigation of the Internal Electric Field in Cadmium Zinc Telluride Detectors Using the Pockels Effect and the Analysis of Charge Transients

The Pockels electro-optic effect can be used to investigate the internal electric field in cadmium zinc telluride (CZT) single crystals that are used to fabricate room temperature x and gamma radiation detectors. An agreement is found between the electric field mapping obtained from Pockels effect images and the measurements of charge transients generated by alpha particles. The Pockels effect images of a CZT detector along two mutually perpendicular directions are used to optimize the detector response in a dual anode configuration, a device in which the symmetry of the internal electric field with respect to the anode strips is of critical importance. The Pockels effect is also used to map the electric field in a CZT detector with dual anodes and an attempt is made to find a correlation with the simulated electric potential in such detectors. Finally, the stress-induced birefringence effects seen in the Pockels images are presented and discussed.

Groza, Michael

Quantitative analysis of charge injection and discharging of Si nanocrystals and arrays by electrostatic force microscopy

NASA requirements for computing and memory for microspacecraft emphasizes high density, low power, small size, and radiation hardness. The distributed nature of a storage elements in nanocrystal floating-gate memories leads to instrinsic fault tolerance and radiation-hardness. Nanocrystal-based memories also offer the possibility of a faster, lower power operation.

atomic

Isopotential Electron Titration: Hydrogen Adsorbate-Metal Charge Transfer

The extent of charge transfer between an adsorbate and thermocatalytic surface plays a key role in determining catalytic activity, but direct and quantitative measures have remained elusive. Here, we report the method of isopotential electron titration (IET), an approach that directly measures charge transfer between adsorbates and catalytic surfaces. Charge transfer between Pt and adsorbed hydrogen adatoms was investigated using a catalytic condenser, where the Pt surface was separated from a p-type silicon layer by a hafnia dielectric film. By forcing the Pt and Si layers into isopotential conditions, charge transfer between the adsorbate and Pt surface was titrated through an external circuit. Hydrogen atoms donated electrons to Pt upon adsorption, which was quantitatively reversed upon desorption. Across a temperature range of 125–200 °C (surface hydrogen fractional coverages of 80–100%), the charge transferred to Pt by an adsorbed hydrogen atom was measured to be 0.19 ± 0.01% |e|/H. Bader charge analysis of the extent of charge transfer was in agreement with experimental measurements, with a calculated net donation of 0.4% |e|/H. The ability to experimentally quantify surface charge transfer provides an electronic-based approach to characterize catalytic surfaces, the adsorbed moieties residing on them, and the chemical reactions they accelerate.

Adsorption

The origin of metallic conductivity in Pt 3 O 4 : a first principles study

The platinum oxide Pt 3 O 4 exhibits metallic conductivity even though it contains square-planar PtO4 units, which in related oxides such as PtO are usually associated with insulating behavior. To identify the electronic origin of this anomalous metallicity, we performed a comprehensive first-principles study using the PBE and r 2 SCAN functionals together with Hubbard U corrections and spin-orbit coupling (SOC). Structural benchmarks show that r 2 SCAN with SOC and a moderate U value (<4 eV) reproduces the experimental lattice constants and formation enthalpy, whereas larger U values (~8 eV) destabilize the cubic structure. Across all functionals and U values considered in this work, Pt 3 O 4 remains metallic. Analyses of the projected density of states, band structures, charge-density isosurfaces, and bonding characteristics demonstrate that the dominant contribution to the metallic character originates from delocalized Pt–O–Pt hybridized antibonding states at the Fermi level. Direct Pt–Pt interactions are present but contribute less strongly to the conductivity. Bader charge analysis reveals only weak Pt charge disproportionation, consistent with mixed Pt II /Pt III character, and a small charge-transfer energy that prevents localization of the Pt 5d electrons even at elevated U. In contrast, PtO develops a Mott or charge-transfer gap under modest U despite having the same PtO 4 coordination environment. These findings demonstrate that persistent Pt–O–Pt covalency is the primary driver of metallicity in Pt 3 O 4 and support the view that this phase can remain conductive under oxygen reduction and oxygen evolution reaction conditions in fuel cell and electrolyzer environments.

36 MATERIALS SCIENCE

Electrostatic analysis of charge-coupled structures

An analysis is presented which is based upon a numerical solution of Gauss's law for the multiple dielectric semiconductor and electrode structure. The formulation resulted in a large set of equations, usually nonlinear, which were solved by an iterative scheme based upon the Gauss-Seidel method employing a relaxation parameter. Proper consideration of the nonlinearity of the space-charge in the semiconductor allowed convergent solutions which can give reasonable approximations to the channel potential profiles though not as good for estimating the space charge itself. The results of this work, which are three computer programs, are listed. None of the programs give the electric field explicitly as output data. However, when this information is desired, the programs can be expanded to include field estimations based on a polynominal fit to the potential field, or they may serve as subprograms for main programs dealing with general aspects of charge transfer.

Gassaway, J. D.

Shuttle user analysis (study 2.2). Volume 1: Executive summary

The following tasks related to the FY 74 Shuttle Users Analysis were completed: (1) STS user charge analysis, (2) business risk and value of operations in space (BRAVO) analysis, and (3) standardized subsystem module analysis. The first task was required to initiate the process of furnishing transportation charge estimates for STS payloads to STS users.

Source record

Charges on a suspended silicon nitride membrane under a high-energy electron beam

Thin silicon nitride (SiN x ) membranes are widely used in gas and liquid phase transmission electron microscopy (TEM) and as phase plates to enhance imaging contrast. SiN x contains trap sites for both positive and negative charges, which can be manipulated by high-energy electron irradiation, external potential biasing, or light exposure. Charge accumulation on the membrane can significantly affect in situ TEM processes, including chemical and electrochemical reactions, nanoparticle dynamics, and catalytic activity, or introduce unwanted phase shifts when used as a phase plate. Here, in this study, charge accumulation on suspended SiN x membranes was investigated using off-axis electron holography combined with model-free charge analysis, supported by custom finite element analysis (FEA) simulations. An average residual positive charge density of approximately 2.8 × 10 −4 C m −2 was measured. Localized and stable regions of both positive and negative charges were identified on the membrane. The global positive and localized positive/negative charges give rise to strong electric fields and electroosmotic slip velocities at the membrane surface, which are sufficient to induce non-Brownian particle behavior and directional fluid flow, offering a physical explanation for previously observed anomalies in particle dynamics, nucleation, and growth during gas and liquid phase TEM experiments. These results provide a benchmark for understanding charge behavior at SiNx interfaces in gas and liquid phase TEM. Furthermore, the FEA simulations establish a framework for future investigations into charge distribution, electrostatic potentials, and electrical double layers at solid–liquid interfaces, particularly in complex geometries and chemically dynamic environments.

Suspended silicon