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At least 37 records · Page 2

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, B.↗

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, Basab↗

Gallium arsenide single crystal solar cell structure and method of making

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Stirn, Richard J.↗

Overexpression of neurofilament H disrupts normal cell structure and function

Studying exogenously expressed tagged proteins in live cells has become a standard technique for evaluating protein distribution and function. Typically, expression levels of experimentally introduced proteins are not regulated, and high levels are often preferred to facilitate detection. However, overexpression of many proteins leads to mislocalization and pathologies. Therefore, for normative studies, moderate levels of expression may be more suitable. To understand better the dynamics of intermediate filament formation, transport, and stability in a healthy, living cell, we inserted neurofilament heavy chain (NFH)-green fluorescent protein (GFP) fusion constructs in adenoviral vectors with tetracycline (tet)-regulated promoters. This system allows for turning on or off the synthesis of NFH-GFP at a selected time, for a defined period, in a dose-dependent manner. We used this inducible system for live cell imaging of changes in filament structure and cell shape, motility, and transport associated with increasing NFH-GFP expression. Cells with low to intermediate levels of NFH-GFP were structurally and functionally similar to neighboring, nonexpressing cells. In contrast, overexpression led to pathological alterations in both filament organization and cell function. Copyright 2002 Wiley-Liss, Inc.

Non-NASA Center↗

Low temperature Zn diffusion for GaSb solar cell structures fabrication

Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

Sulima, Oleg V.↗

A multiple-scales model of the shock-cell structure of imperfectly expanded supersonic jets

The present investigation is concerned with the development of an analytical model of the quasi-periodic shock-cell structure of an imperfectly expanded supersonic jet. The investigation represents a part of a program to develop a mathematical theory of broadband shock-associated noise of supersonic jets. Tam and Tanna (1982) have suggested that this type of noise is generated by the weak interaction between the quasi-periodic shock cells and the downstream-propagating large turbulence structures in the mixing layer of the jet. In the model developed in this paper, the effect of turbulence in the mixing layer of the jet is simulated by the addition of turbulent eddy-viscosity terms to the momentum equation. Attention is given to the mean-flow profile and the numerical solution, and a comparison of the numerical results with experimental data.

Tam, C. K. W.↗

Gradient cell–structured high-entropy alloy with exceptional strength and ductility

We report that similar to conventional materials, most multicomponent high-entropy alloys (HEAs) lose ductility as they gain strength. In this study, we controllably introduced gradient nanoscaled dislocation cell structures in a stable single-phase HEA with face-centered cubic structure, thus resulting in enhanced strength without apparent loss of ductility. Upon application of strain, the sample-level structural gradient induces progressive formation of a high density of tiny stacking faults (SFs) and twins, nucleating from abundant low-angle dislocation cells. Furthermore, the SF-induced plasticity and the resultant refined structures, coupled with intensively accumulated dislocations, contribute to plasticity, increased strength, and work hardening. These findings offer a promising paradigm for tailoring properties with gradient dislocation cells at the nanoscale and advance our fundamental understanding of the intrinsic deformation behavior of HEAs.

36 MATERIALS SCIENCE↗

Evolution of Droplet Size Distributions During the Transition of an Ultraclean Stratocumulus Cloud System to Open Cell Structure: An LES Investigation Using Lagrangian Microphysics

Here, a state-of-the-art Lagrangian microphysics scheme is used in a large-eddy simulation to investigate the stratocumulus transition from closed to open cell structure. Processes controlling precipitation development, which is a key to the transition, are analyzed by leveraging unique benefits of Lagrangian microphysics, particularly the ability to track computational drops in the flow. Sufficient time is needed for coalescence growth of cloud drops to drizzle within the updraft-downdraft cycle of large eddies. This favors broad drop size distributions (DSDs) and drizzle growth in downdrafts, where drops are typically much older than in updrafts. During the closed cell stage, mean cloud drop radius is too small, and the DSDs are too narrow, so that the timescale for coalescence is much longer than the large eddy turnover time and drizzle growth is limited. The closed-to-open cell transition occurs when these timescales become comparable and the precipitation flux increases sharply.

54 ENVIRONMENTAL SCIENCES↗

Optimizing the Internal Cell Structure of the Radon Monitor Based on Electrostatic Collection Method

Abstract As Rn-222 decays, an alpha particle is emitted and the residual polonium nucleus recoils in the opposite direction. At the end of the recoil path, 88% of the polonium atoms have a positive charge and 12% are neutral. The electric potential distribution in the 60 ml hemispherical internal cell of the radon monitor based on electrostatic collection is studied for reducing the combined probability of the positively charged Po-218 and the OH− produced by the ionization of water vapour in the air. The COMSOL software is used to simulate the electric potential distribution in the internal cell of the radon monitor based on the electrostatic collection method at 27°C, a pressure of 0.1 Mpa. For improving the collection efficiency of Po-218 ions, the average collection time along vertical and oblique lines is calculated when the upper surface of the internal cell is plastic, uncharged metal and charged metal, respectively. Assuming that the gas in the internal cell is uniformly distributed, the results show that if the upper surface of the hemispherical internal cell is plastic or uncharged metal, the electric potential formed in the internal cell is more uniform, and it is beneficial to reduce the total collection time of the positively charged Po-218 ions, thereby improving collection efficiency. The simulation results can be used as an effective reference for optimizing the design of the internal cell structure of the radon monitor based on electrostatic collection method.

Fan, Zhongkai (ORCID:0000000181247459)↗

Effects of indirect bandgap top cells in a monolithic cascade cell structure

The effect of having a slightly indirect top cell in a three junction cascade monolithic stack is calculated. The minority carrier continuity equations are utilized to calculate individual junction performance. Absorption coefficient curves for general III-V compounds are calculated for a variety of direct and indirect gap materials. The results indicate that for a small excursion into the indirect region, (about 0.1 eV), the loss of efficiency is acceptably small (less than 2.5 percent) and considerably less than attempting to make the top junction a smaller direct bandgap.

Curtis, H. B.↗

A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

Gale, R. P.↗

Soft X-Ray Tomography Has Evolved into a Powerful Tool for Revealing Cell Structures

Over the past three decades, soft X-ray tomography (SXT) has rapidly evolved from a proof-of-concept microscopy method into a high-throughput quantitative imaging modality. This advancement enables researchers to address central questions in cell biology. Despite its relatively short developmental period compared to light and electron microscopy, SXT has emerged as a powerful imaging technology. It enables measuring chemical changes in cellular organelles, analyzing three-dimensional structures of whole cells and creating digital cellular models to study cell motility. We discuss the unique nature of SXT to visualize cells without fixation or labeling, enabling quantitative analyses of organelle chemical composition. We explore SXT microscopes available worldwide, SXT segmentation software, and the diverse cell types studied using this technique. We conclude with emerging directions in SXT imaging, including a brief discussion of recent discoveries that are highly influential and likely to become integral to cell biology textbooks.

Weinhardt, Venera↗

Effects of a simulated microgravity model on cell structure and function in rat testis and epididymis

The effect of simulated microgravity on the structure and function of the testis and epididymis cells was investigated in rats subjected to 7 days of tail suspension. Results of a histological examination revealed presence of disorganized seminiferous tubules and accumulation of large multinucleated cells and spermatids in the lumen of the epididymis. In addition, decreases in the content of testis protein and in testosterone levels in the testis, the interstitial fluid, and the epididymis were observed.

Hadley, Jill A.↗

Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from ~680 mV to ~960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

Ringel, S. A.↗

Correlative montage parallel array cryo-tomography for in situ structural cell biology

Abstract Imaging large fields of view while preserving high-resolution structural information remains a challenge in low-dose cryo-electron tomography. Here we present robust tools for montage parallel array cryo-tomography (MPACT) tailored for vitrified specimens. The combination of correlative cryo-fluorescence microscopy, focused-ion-beam milling, substrate micropatterning, and MPACT supports studies that contextually define the three-dimensional architecture of cells. To further extend the flexibility of MPACT, tilt series may be processed in their entirety or as individual tiles suitable for sub-tomogram averaging, enabling efficient data processing and analysis.

59 BASIC BIOLOGICAL SCIENCES↗

Deployable pressurized cell structure for a micrometeoroid detector

This disclosure comprises a plurality of individual pressurized cells which are caused to leak in response to a micrometeoroid penetration, the leak being sensed by appropriate instrumentation. The plurality of cells may be rolled into a compact arrangement such that the volume of the micrometeoroid detector is small and therefore readily packed in a payload of a launch vehicle. Once the payload is placed in orbit, the rolled up cells can be released, pressurized and provide a relatively rigid, large surface area for detecting micrometeoroid penetration.

Kinard, W. H.↗

Anisotropic yield models for lattice unit cell structures exploiting orthotropic symmetry

We report numerical homogenization enables efficient computational analysis and design of multiscale structures made of micro-architected materials including lattice unit cells. However, predicting yield is nontrivial because it requires accurate and efficient predictions of the maximum stress inside the homogenized unit cells. To address this challenge, we develop a macroscale anisotropic yield function for micro-architected materials. The yield function depends on the three-dimensional macroscale stress state and the parameters describing a family of micro-architectures, such as the radii of the struts in a lattice unit cell. To ensure accuracy, we determine the maximum stress using three-dimensional continuum finite-element analysis. To ensure efficiency, we construct surrogate models from the aforementioned high-fidelity results for yield prediction. To reduce simulation costs and surrogate modeling complexity, we leverage orthotropic symmetry commonly found in lattice unit cells. In this paper, we provide a thorough presentation of group representations and the systematic procedure to exploit orthotropic domain symmetry in homogenization and surrogate modeling. We illustrate the use of linear homogenization results to predict yield in specific unit cells without further simulations. We furthermore show that surrogate modeling presents a viable option for anisotropic yield prediction in a continuously parametrized family of micro-architectures. More specifically, despite the dimensionality and degree of nonlinearity in the maximum micro von Mises stress within the unit cell, the surrogate models can predict it with less than 5% error at least 90% of the time. Moreover, the largest under-prediction error, which is more critical than the over-prediction error, is typically less than 10%.

42 ENGINEERING↗