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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Quantitative characterization of ZrO2 gate dielectric interface with tellurium

Tellurium (Te) has recently emerged as a promising p-type semiconductor that can be processed at low temperatures, compatible with back end of line CMOS integration. Characterization of tellurium–dielectric interfaces is essential for further device advancements. Here, the interface quality of Te with ZrO2 gate dielectric is studied in a metal-oxide semiconductor capacitor structure. The interface trap density (Dit) is measured as a function of atomic layer deposition (ALD) temperature, without the use of a seed layer. Given the low thermal budget of Te, the ALD temperature is shown to be particularly important. The lowest Dit of 5 × 1012 states/cm2 eV is obtained at a low ALD process temperature of 120 °C. To further assess the impact of Dit on device performance, field-effect transistors (FETs) were fabricated. The subthreshold swing and effective hole mobility of the FETs were analyzed in relation to Dit, emphasizing the importance of a defect-minimized interface for enhancing Te transistor performance.

Byeon, Kyeong-Jae↗
DOE OSTI2022

Operability thresholds for thermally damaged EBW detonators

Operability thresholds that differentiate between functional RP-87 exploding bridge wire (EBW) detonators and nonfunctional RP-87 EBW detonators (duds) were determined by measuring the time delay between initiation and early wall movement (function time). The detonators were inserted into an externally heated hollow cylinder of aluminum and fired with current flow from a charged capacitor using an exploding bridge wire (EBW initiated). Functioning detonators responded like unheated pristine detonators when the function time was 4 μs or less. The operability thresholds of the detonators were characterized with a simple decomposition cookoff model calibrated using a modified version of the Sandia Instrumented Thermal Ignition (SITI) experiment. These thresholds are based on the calculated state of the PETN when the detonators fire. The operability threshold is proportional to the positive temperature difference (ΔT) between the maximum temperature within the PETN and the onset of decomposition (~406 K). Furthermore, the temperature difference alone was not sufficient to define the operability threshold. The operability threshold was also proportional to the time that the PETN had been at elevated temperatures. That is, failure was proportional to both temperature and reaction rate. The reacted gas fraction is used in the current work for the reaction correlation. Melting of PETN also had a significant effect on the operability threshold. Detonator failure occurred when the maximum temperature exceeded the nominal melting point of PETN (414 K) for 45±5 s or more.

42 ENGINEERING↗
DOE OSTI2022

Harvesting Wave Energy to Power Acoustic Transmitters Using Triboelectric Nanogenerator

Wave energy has the largest reserves and widest distribution among blue energy sources. However, the conversion and utilization of ocean wave energy are challenging. In this work, we developed a contact-separation mode triboelectric nanogenerator (TENG) with a simple structure for harvesting wave energy and powering marine sensors and transmitters and performed detailed electrical characterization under controlled laboratory conditions. A prototype power management circuit (PMC) was implemented to improve the output performance of the TENG. The output from the PMC could charge up a storage capacitor for powering sensors and electronics. Eventually, the TENG was integrated within a water-proof enclosure and tested using a custom-built wave simulator to evaluate the device performance in a more representative scenario. The device sustainably powered up an array of 27 LEDs and was able to charge up a capacitor up to 1.8 V for driving an acoustic transmitter. The results demonstrate that TENG technology shows great promise in harvesting low-frequency ocean wave energy.

Yang, Yang↗
DOE OSTI2023

Experimental Analysis of Distribution Network Voltage Regulation Using Smart Inverters: Preprint

Smart inverters (SI) have huge potential in providing grid services which has not been fully realized yet. One of these grid services, distribution network voltage regulation by SI, can improve the network voltage by regulating the SI reactive and active power output. Voltage regulation by SI is much faster compared to traditional voltage regulating devices, e.g. tap changing transformer, capacitor banks. However, there is gap in available published literature on the characteristics of SIs when the SI is controlled by local controller or external control signal. This paper presents the experimental study to characterize SI reactive power regulation response to two different control methods: autonomous control method and remote dispatch method. It was found that IS reactive power regulation response could be significantly different in terms of delay, and ramp rate for these two methods. Finally, Power-Hardware-in-The-Loop (PHIL) tests were conducted to evaluate the performance of these two methods. The PHIL tests results show that SI response characteristics for autonomous control method and remote dispatch method need to be considered during planning for distribution network voltage regulation using SI.

autonomous control↗
DOE OSTI2024

Output Capacitance Loss of GaN HEMTs in Steady-State Switching

The output capacitance (C OSS ) loss, a loss produced when the device’s output capacitor is charged and discharged, has become a concern for GaN high electron mobility transistors (HEMTs) in high-frequency applications. This work presents a new, easy-to-implement method for the C OSS loss characterization based on the unclamped inductive switching (UIS) setup. As compared to prior approaches, this method involves the device’s ON-state conduction and could measure the C OSS loss in a single pulse and the steady-state switching. The C OSS loss of three types of mainstream commercial GaN HEMTs is characterized, which exhibit some common dependencies including a non-monotonic relation with the dv/dt (or resonance frequency), a linear relation with the ON-state current, a power-law relation with the peak blocking voltage, and little temperature dependence. In addition, their C OSS losses all show minimal distinctions in a single pulse and the steady-state switching, despite the increased on-resistance in the steady-state switching. Furthermore, this suggests that the traps accounting for the C OSS loss possess different de-trapping time constants as compared to the traps governing the dynamic on-resistance. Finally, a unified model is established to describe the C OSS loss of all three types of GaN HEMTs. These results provide important references for the high-frequency application of GaN HEMTs and new insights into the physical origin of their C OSS loss.1

42 ENGINEERING↗
DOE OSTI2023

Plasma-assisted deposition and characterization of Al 2 O 3 dielectric layers on (001) β -Ga 2 O 3

In this work, we have investigated plasma-assisted deposition of Al 2 O 3 on HVPE (001) β-Ga 2 O 3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga 2 O 3 , with relatively low hysteresis in capacitance–voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. In conclusion, this study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al 2 O 3 /β-Ga 2 O 3 MOS structures for device application purposes.

42 ENGINEERING↗
DOE OSTI2026

A First Demonstration of the SQUAT Detector Architecture: Direct Measurement of Resonator-Free Charge-Sensitive Transmons

The Superconducting Quasiparticle-Amplifying Transmon (SQUAT) is a new sensor architecture for THz (meV) detection based on a weakly charge-sensitive transmon directly coupled to a transmission line. In such devices, energy depositions break Cooper pairs in the qubit capacitor islands, generating quasiparticles. Quasiparticles that tunnel across the Josephson junction change the transmon qubit parity, generating a measurable signal. In this paper, we present the design of first-generation SQUATs and demonstrate an architecture validation. We summarize initial characterization measurements made with prototype devices, comment on background sources that influence the observed parity-switching rate, and present experimental results showing simultaneous detection of charge and quasiparticle signals using aluminum-based SQUATs.

Magoon, H. [SLAC; KIPAC, Menlo Park; Stanford U., ↗
DOE OSTI2026

Atomic-Scale Characterization and Electronic Properties of Gold-Capped Niobium Films for Superconducting Qubits

Niobium thin films are central to superconducting qubits, but their complex native oxides contribute significantly to microwave losses. A promising mitigation strategy is to suppress oxide formation using engineered thin-film encapsulation layers. Recent experiments have shown that ∼10 nm metallic overlayers on Nb capacitor films can improve the energy relaxation time T1 of transmon qubits. Here, we present a comparative study of Au-capped Nb films fabricated in situ by molecular beam epitaxy and ex situ by sequential deposition benchmarked against bare Nb films. Using complementary structural, chemical, and spectroscopic techniques, we correlate the interface quality with superconducting electronic properties of the Au surface. Low-temperature scanning tunneling spectroscopy (STS) provides spatially resolved quasiparticle density-of-states maps. While both Au-capped Nb samples exhibit large areas with uniform, fully gapped density of states, clear differences emerge between the two interfaces. Compared to in situ Nb-Au, ex situ Nb-Au exhibits a reduced induced superconducting gap, broadened coherence peak, and localized in-gap states, consistent with a residual NbxOy layer at the interface. Supported by complementary structural and chemical analyses, these findings demonstrate that STS directly links nanoscale superconducting properties to interface preparation, highlighting the importance of controlled in situ encapsulation for minimizing dissipation and improving quantum coherence.

Makita, Junki [MIT; Temple U.] (ORCID:000000026889↗
DOE OSTI2023

Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits

The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches.

Physics↗
DOE OSTI2022

Amorphization of Pseudocapacitive T−Nb 2 O 5 Accelerates Lithium Diffusivity as Revealed Using Tunable Isomorphic Architectures

Abstract Intercalation pseudocapacitance can combine capacitor‐like power densities with battery‐like energy densities. Such surface‐limited behavior requires rapid diffusion where amorphization can increase solid‐state diffusivity. Here intercalation pseudocapacitive materials with tailored extents of amorphization in T‐Nb 2 O 5 are first reported. Amorphization was characterized with WAXS, XPS, XAFS, and EPR which suggested a peroxide‐rich (O 2 2− ) surface that was consistent with DFT predictions. A series of tunable isomorphic architectures enabled comparisons while independently varying transport parameters. Through process of elimination, solid‐state lithium diffusion was identified as the dominant diffusive‐constraint dictating the maximum voltage sweep rate for surface‐limited kinetics ( v SLT ), termed the Surface‐Limited Threshold (SLT). The v SLT increased with amorphization however stable cycling required crystalline T‐Nb 2 O 5 . A current‐response model using series‐impedances well‐matched these observations. This perspective revealed that amorphization of T‐Nb 2 O 5 enhanced solid‐state diffusion by 12.2 % and increased surface‐limitations by 17.0 % (stable samples). This approach enabled retaining 95 % lithiation capacity at ∼800 mV s −1 (1,600 C‐rate equivalent).

25 ENERGY STORAGE↗
DOE OSTI2023

On the Interplay between Size and Disorder in Suppressing Intercalation-Induced Phase Transitions in Pseudocapacitive Nanostructured MoS 2

Pseudocapacitors are an emerging class of energy storage materials that offer an attractive compromise between the energy density of batteries and power density of electric double-layer capacitors. Decreasing particle size and increasing surface area of battery materials is a common approach for introducing pseudocapacitive behavior and increasing power density. However, in many cases, as the crystal size is reduced, lattice disorder of unknown extent is also introduced, making it difficult to characterize the relative contribution of size and disorder to fast-charging performance. Here, in this work, a series of nanostructured MoS 2 materials are synthesized with different crystallite sizes and degrees of crystallinity to decouple the effects of size and disorder on charge/discharge kinetics. The extent and type of disorder in each material is quantified by total X-ray scattering experiments and pair distribution function analyses. Electrochemical characterization, including galvanostatic rate capability, cyclic voltammetry, and various kinetic analyses, are used to demonstrate that both decreasing particle size and introducing lattice disorder are effective strategies for increasing charge storage kinetics, and that the effects are additive. Finally, operando X-ray diffraction measurements show that both size and disorder can be used suppress first-order Li + intercalation-induced phase transitions, a key feature for enabling pseudocapacitive charge storage.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The ultrafast pixel array camera system and its applications in high energy density physics

Diagnostics in high energy density physics, shock physics, and related fields are primarily driven by a need to record rapidly time-evolving signals in single-shot events. These measurements are often limited by channel count and signal degradation issues on cable links between the detector and digitizer. Here we present the Ultrafast Pixel Array Camera (UPAC), a compact and flexible detector readout system with 32 waveform-recording channels at up to 10 Gsample/s and 1.8 GHz analog bandwidth. The compact footprint allows the UPAC to be directly embedded in the detector environment. A key enabling technology is the PSEC4A chip, an eight-channel switch-capacitor array sampling device with up to 1056 samples/channel. The UPAC system includes a high-density input connector that can plug directly into an application-specific detector board, programmable control, and serial readout, with less than 5 W of power consumption in full operation. We present the UPAC design and characterization, including a measured timing resolution of ~20 ps or better on acquisitions of sub-nanosecond pulses with minimal system calibrations. Example applications of the UPAC are also shown to demonstrate operation of a solid-state streak camera, an ultrafast imaging array, and a neutron time-of-flight spectrometer.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Low-loss Si-based Dielectrics for High Frequency Components of Superconducting Detectors

Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric and metal layers can cause microwave losses and degrade device performance. Optimization of the dielectric fabrication, device structure, and surface morphology can help mitigate this problem. We present the fabrication of silicon oxide and nitride thin film dielectrics. We then characterized them using Scanning Electron Microscopy, Atomic Force Microscopy, and spectrophotometry techniques. The samples were synthesized using various deposition methods, including Plasma-Enhanced Chemical Vapor Deposition and magnetron sputtering. The film's morphology and structure were modified by adjusting the deposition pressure and gas flow. The resulting films were used in superconducting resonant systems consisting of planar inductors and capacitors. Measurements of the resonator properties, including their quality factor, were performed.

low-loss dielectrics↗
DOE OSTI2024

Development of an MKID frequency-to-pixel LED mapper for SPT-3G+

SPT-3G+ is the next-generation camera for the South Pole Telescope (SPT). SPT is designed to measure the cosmic microwave background (CMB) and the mm/sub-mm sky. The planned focal plane consists of 34,000 microwave kinetic inductance detectors (MKIDs), divided among three observing bands centered at 220, 285, and 345 GHz. Each readout line is designed to measure 800 MKIDs over a 500 MHz bandwidth, which places stringent constraints on the accuracy of the frequency placement required to limit resonator collisions that reduce the overall detector yield. To meet this constraint, we are developing a two-step process that first optically maps the resonance to a physical pixel location, and then next trims the interdigitated capacitor (IDC) to adjust the resonator frequency. We present a cryogenic LED apparatus operable at 300 mK for the optical illumination of SPT-3G+ detector arrays. We demonstrate integration of the LED controls with the GHz readout electronics (RF-ICE) to take data on an array of prototype SPT-3G+ detectors. We show that this technique is useful for characterizing defects in the resonator frequency across the detector array and will allow for improvements in the detector yield.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Correcting impedance measurements for background parasitics to characterize circuit components in cryogenic environments

Predictable circuit response is a critical prerequisite for accurate electronic measurements. Here, we describe a powerful yet straightforward experimental method and analysis model that utilizes an affordable LCR meter in conjunction with an in situ parasitic-impedance background-correction procedure to measure the temperature-dependent impedance (magnitude and phase) of up to ten individual passive circuit elements in a single cryostat run. We show how the model unambiguously identified a ∼20× drop in capacitance for 22 μF 5XR multilayer ceramic capacitors cooled from 300 K to 360 mK in an environment with a parasitic capacitance of ∼300 pF. The same experimental procedure, based on a simple two-wire measurement, was also used to measure 10 and 22 pF thin-film capacitors and 100 MΩ thick-film resistors. The results showed that the resistor values increased by up to an order of magnitude when the devices were cooled from 300 K to 360 mK. Most importantly, we showed that the simple data-acquisition method, coupled with our analysis model, enabled the measurement of component parasitics, and effectively extended the accuracy of a commercial LCR meter beyond its manufacturer-guaranteed values for a wide range of measurement frequencies. We also showed that, in the current configuration, our simple approach is limited to a capacitance accuracy of ∼10 pF.

Carpenter, R. J. [Santa Clara Univ., Santa Clara, ↗
DOE OSTI2025

Anion Vacancies Coupling with Heterostructures Enable Advanced Aerogel Cathode for Ultrafast Aqueous Zinc‐Ion Storage

As a potential cathode material, manganese-based sulfide has recently attracted increasing interest due to its many advantages in aqueous zinc-ion storage. Unfortunately, some challenges such as sluggish kinetics, unstable structure, and controversial phase transition mechanism during the energy storage process hinder its practical application. Herein, inspired by density functional theory (DFT) calculations, a novel 3D sulfur vacancy-rich and heterostructured MnS/MXene aerogel is designed, and used as a cathode for aqueous Zn-ion batteries/hybrid capacitors (ZIBs/ZICs) for the first time. Thanks to the synergistic modification strategy of sulfur vacancies and heterostructures, the as-constructed MnS/MXene//Zn ZIBs exhibit significantly enhanced electrochemical properties, especially outstanding rate capability and cyclic stability. More encouragingly, the as-assembled MnS/MXene//porous carbon (PC) ZICs exhibit an ultrahigh energy density, a high power density, and a splendid cycling lifespan. Most notably, systematic kinetic analyses, ex situ characterizations, and DFT calculations illustrate that MnS/MXene first irreversibly converts into MnO x @ZnMnO 3 /MXene, and then undergoes a reversible conversion from MnO x @ZnMnO 3 /MXene to MnOOH@ZnMn 2 O 4 /MXene, accompanied by the co-insertion/extraction of H + and Zn 2+ . Further, the synergistic modification strategy of sulfur vacancies and heterostructures and the thorough mechanistic study proposed in this work offer valuable guidance for designing and exploiting high-performance cathodes in aqueous zinc-based energy storage devices.

25 ENERGY STORAGE↗
DOE OSTI2023

ICRH operations and experiments during the JET-ILW tritium and DTE2 campaigns

2021 has culminated with the completion of the JET-ILW DTE2 experimental campaign. This contribution summarizes Ion Cyclotron Resonance Heating (ICRH) operations from system and physics point of view. Improvements to the (ICRH) system, to operation procedures and to real time RF power control were implemented to address specific constraints from tritium and deuterium-tritium operations and increase the system reliability and power availability during D-T pulses. ICRH was operated without the ITER-Like Antenna (ILA) because water leaked from an in-vessel capacitor into the vessel on day-2 of the D-T campaign. Three weeks were required to identify and isolate the leak and resume plasma operations. Dedicated RF-Plasma Wall Interaction (PWI) experiments were conducted; tritium plasmas exhibit a higher level of Be sputtering on the outer wall and impurity content when compared to deuterium or hydrogen plasmas. The JET-DTE2 campaigns provided the opportunity to characterize ICRH schemes foreseen for the ITER operation, in the ITER like wall environment in ELMy H-mode scenarios aiming at maximizing fusion performance. The second harmonic tritium resonance heating and to a lesser extent minority 3He heating (ITER D-T ICRH reference schemes) lead to improved ion temperature and fusion performance when compared to hydrogen minority ICRH. However, these discharges suffered from a lack of stationarity and gradual impurity accumulation potentially because of a deficit of ICRH power when using JET antennas at lower frequencies. Fundamental deuterium ICRH was used in tritium-rich plasmas and with deuterium Neutral Beam Heating; this ICRH scheme proved to be very efficient boosting ion temperature and fusion performance in these plasmas.

Klepper, C. Christopher↗
DOE OSTI2024

Direct Imaging of Asymmetric Interfaces and Electrostatic Potentials inside a Hafnia–Zirconia Ferroelectric Nanocapacitor

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing, such as oxygen vacancy formation and interfacial reactions, appear to strongly affect device performance. However, the correlation between the structure, chemistry, and electrical potentials at the nanoscale in these devices is not fully known, making it difficult to understand their influence on device properties. Here, we directly image the composition and electrostatic potential with nanometer resolution in the cross section of a nanocrystalline W/Hf 0.5 Zr 0.5 O 2−δ (HZO)/W ferroelectric capacitor using multimodal electron microscopy. This reveals a 1.4 nm wide tungsten suboxide interfacial layer formed at the bottom interface during fabrication, which introduces a potential dip and leads to asymmetric switching fields. Additionally, we compare the measured potentials to DFT calculations and find it is nearly 3 V lower than expected in the HZO, which appears to be caused by oxygen vacancies and a resulting negative built-in potential. In conclusion, these chemical and electrostatic details are important to characterize and tune to achieve high-performance ferroelectric devices.

Defects in solids↗