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Particle-in-Cell Modeling of Low Pressure Capacitively Coupled Plasmas for High Aspect Ratio Etching
Plasma etching of semiconductors is an essential process in the production of microchips which enable nearly every aspect of modern life. Two frequencies of applied voltage are often used to provide control of both the ion fluxes and energy distribution.
Particle-in-cell modeling of low pressure, high voltage capacitively coupled Ar plasmas.
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Electron density measurements and calculations in a helium capacitively-coupled radio-frequency plasma
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Data set of fully kinetic simulations of capacitively coupled plasma discharges in argon for development of surrogate models
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Vacuum ultraviolet emission in low pressure capacitively coupled argon discharges
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Mapping electron density with laser collision induced fluorescence in a helium capacitively coupled radio frequency plasma
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Data set of fully kinetic simulations of capacitively-coupled radio-frequency plasma discharges in argon
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Capacitively Coupled LAPPDs with 2D Pixelated Readout Planes for Time of Flight and Ring Imaging Cherenkov Applications
Large Area Picosecond Photon Detectors (LAPPDs) are micro-channel plate based photosensors featuring hundreds of square centimeters of sensitive area in a single package and capable of providing timing resolution on the order of 50 ps for single photon detection. However, LAPPDs currently do not exist in finely pixelated 2D readout configurations which, in addition to ighresolution timing, would also provide high spatial resolution required for Ring Imaging CHerenkov (RICH) detectors. One of the recent LAPPD models (Gen II) provides the opportunity to overcome the lack of pixellation by coupling an external readout to the sealed detector itself. The readout plane in this case is a simple printed circuit board (PCB) that can be laid out in a custom application-specific way for 1D or 2D sensitive area pixellation. This allows for a much shorter readout-plane prototyping cycle and provides unprecedented flexibility in choosing an appropriate segmentation that can be optimized for any particular detector need in terms of pad size, orientation, and shape.
8-Plate Multi-Resonant Coupling Using a Class-E 2 Power Converter for Misalignments in Capacitive Wireless Power Transfer
Misalignment is a common issue in wireless power transfer systems. It shifts the resonant frequency away from the operating frequency that affects the power flow and efficiency from the charging station to the load. This work proposes a novel capacitive wireless power transfer (CPT) using an 8-plate multi-resonant capacitive coupling to minimize the effect of misalignments. A single-active switch class-E 2 power converter is utilized to achieve multi-resonance through the selection of different resonant inductors. Simulations show a widening of the resonant frequency band which offers better performance than a regular 4-plate capacitive coupling for misalignments. The hardware results of the 8-plate multi-resonant coupling show an efficiency of 88.5% for the 20.8 W test, which is 18.3% higher than that of the regular 4-plate coupling. Because of the wider resonant frequency band {455–485 kHz}, compared with the regular 4-plate coupling, the proposed design minimized the output voltage drop by 15% for a 10% misalignment. Even for large misalignments, the 8-plate performance improved by 40% compared with the 4-plate coupling.
Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics
Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm -2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS 2 transistors exhibiting high on/off current ratios over 10 8 , ultralow subthreshold swing of 65 mV dec -1 and ultralow leakage current density of ~10 -6 A cm -2 . Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor–insulator transition at the clean-limit Bi 2 Sr 2 CaCu 2 O 8+δ can also be realized through fluoride gating. In conclusion, our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.
Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of low fundamental frequency biases
The use of non-sinusoidal waveforms in low pressure capacitively coupled plasmas intended for microelectronics fabrication has the goal of customizing ion and electron energy and angular distributions to the wafer. One such non-sinusoidal waveform uses the sum of consecutive harmonics of a fundamental sinusoidal frequency, f 0 , having a variable phase offset between the fundamental and even harmonics. In this paper, we discuss results from a computational investigation of the relation between ion energy and DC self-bias when varying the fundamental frequency f 0 for capacitively coupled plasmas sustained in Ar/CF 4 /O 2 and how those trends translate to a high aspect ratio etching of trenches in SiO 2 . The fundamental frequency, f 0 , was varied from 1 to 10 MHz and the relative phase from 0° to 180°. Two distinct regimes were identified. Average ion energy onto the wafer is strongly correlated with the DC self-bias at high f 0 , with there being a maximum at φ = 0° and minimum at φ = 180°. In the low frequency regime, this correlation is weak. Average ion energy onto the wafer is instead dominated by dynamic transients in the applied voltage waveforms, with a maximum at φ = 180° and minimum at φ = 0°. The trends in ion energy translate to etch properties. In both, the high and low frequency regimes, higher ion energies translate to higher etch rates and generally preferable final features, though behaving differently with phase angle.
The Simulation and Design of an On-Chip Superconducting Millimetre Filter-Bank Spectrometer
Abstract Superconducting on-chip filter banks provide a scalable, space saving solution to create imaging spectrometers at millimetre and submillimetre wavelengths. We present an easy to realise, lithographed superconducting filter design with a high tolerance to fabrication error. Using a capacitively coupled $$\lambda /2$$ λ / 2 microstrip resonator to define a narrow ( $$\lambda /\Delta \lambda = 300$$ λ / Δ λ = 300 ) spectral pass band, the filtered output of a given spectrometer channel directly connects to a lumped-element kinetic inductance detector. We show the tolerance analysis of our design, demonstrating $$<11\%$$ < 11 % change in filter quality factor to any one realistic fabrication error and a full filter-bank efficiency forecast to be 50% after accounting for fabrication errors and dielectric loss tangent.
Power Layout Design of a GaN HEMTs-Based High-Power High-Efficiency Three-Level ANPC Inverter for 800 V DC Bus System
Multiple commutation paths exist for switching devices in a three-level active neutral point clamped (3L-ANPC) inverter operation based on the selected switching state and current direction. In addition, the capacitive coupling path of the nonswitching device is a key design aspect for enabling high voltage and high current operation of gallium nitride (GaN) switches in 3L-ANPC topology. A comprehensive study of the switching transient events of inner, outer, and clamping devices of 3L-ANPC is presented in this article. The commutation mechanisms for worst-case transient voltage overshoots (TVOs) are identified. A simplified equivalent circuit model is presented to determine the design criteria for the power layout structure's parasitic inductances. A power layout strategy satisfying the design criteria is then proposed using an insulated metal substrate power printed circuit board (PCB) to enable efficient high-power operation. The proposed design minimizes the commutation and capacitive coupling path inductances to 6 nH and 11.5 nH, respectively. This enables the fast switching operation of GaN HEMTs at 800 V dc, 36 A with a low TVO of 31% verified through experimental three-level double pulse test results. Experimental evaluation of a three-phase 3L-ANPC hardware prototype based on the proposed power layout shows 99% efficiency at 800 V, 9.5 kVA and 50 kHz switching frequency. The proposed design achieves a low case-to-ambient thermal resistance of 2.3 °C/W.
Toward the origins of binding energy shifts and “satellites” formation during plasma-XPS measurements
In-plasma x-ray photoelectron spectroscopy (plasma-XPS) emerges as a powerful platform for real-time, in situ chemical analysis under conditions relevant to semiconductor processing and other plasma-enabled technologies. This study investigates the origins of binding energy (BE) shifts and the formation of “satellite” peaks observed during plasma-XPS measurements across conductive, dielectric, and gas-phase systems. Using a standard laboratory-based ambient pressure XPS apparatus coupled with an alternating current (AC)-driven capacitively coupled plasma source, we demonstrate that metastable surface species, such as transient Au oxides, can be detected during plasma exposure, revealing chemical states that are hardly accessible using conventional ultrahigh vacuum (UHV) XPS. In dielectric samples (e.g., undoped diamond, sapphire), we observe pressure- and plasma-type-dependent BE shifts of more than 50 eV, attributed to x-ray-induced and plasma-mediated surface charging. These shifts are mitigated at higher pressures/plasmas or in electronegative plasmas (e.g., O 2 ), the latter due to enhanced charge compensation mechanisms involving slow negative ions. For gas-phase species, AC-plasma excitation leads to spectral broadening and the emergence of “satellite” peaks with energy separations of a few electron volts, linked to oscillating local plasma potentials in the probing volume. Furthermore, these findings highlight the complex and important interplay between plasma parameters, surface charging, and local electric fields in shaping XPS spectra. Overall, plasma-XPS emerges as a critical metrological tool for probing transient surface chemistry, with implications for semiconductor processing, material synthesis, and plasma diagnostics.
Effects of macroparticle weighting in axisymmetric particle-in-cell Monte Carlo collision simulations
In this paper, the effects of macroparticle (MP) weighting on the plasma discharge, particularly near the centerline, are investigated using a two-dimensional axisymmetric particle-in-cell Monte Carlo collision (PIC/MCC) model. A variable MP weight according to the radial position of the MPs is employed to maintain sufficient number of MPs near the centerline of the plasma source. Finally, the plasma density obtained from the PIC/MCC simulations for low-pressure (25–100 mTorr) capacitively coupled plasmas is found to be artificially large when the MP weight near the centerline is not well resolved, demonstrating the need for particle convergence studies for axisymmetric PIC/MCC simulations.
High Throughput Source-less Plasma Deposition of Structured Silicon Anodes for Lithium-Ion Batteries
Amprius developed a manufacturing solution for silicon nanowire anode that relies on an inexpensive, high throughput, and high gas precursor utilization plasma deposition method that uses the anode foils as electrodes for plasma generation. The capacitively couple plasma (CCP) method is used in semiconductor and photovoltaic industry and Amprius modified existing high throughput equipment to use anode foils and to deposit amorphous silicon. The equipment was installed ahead of the program at Amprius site. The rest of the tasks included foil handling and process development. The equipment passed site acceptance tests (SAT) and the process parameter mapping was completed, indicating that the target process window limits produce output materials at the rate and with yield and specifications that meet the manufacturing target criteria. Amprius has hired supporting personnel to optimize processes and run the equipment. A parallel task verified the baseline performance of the silicon anode material, to be used as reference for the new manufacturing method.
Patterned anodes with sub-millimeter spatial resolution for large-area MCP-based photodetector systems
Micro-channel-plate-based photo-detectors are unique in being capable of covering very large areas such as those required in elementary particle and nuclear physics, while providing sub-millimeter space resolution, time resolutions of less than 10 picoseconds for charged particles, and time resolutions of 30 psec–50 psec for single photons. In such systems the electronic channel count is a major cost driver. Incorporating a capacitively-coupled anode allows the use of external pickup electrodes with patterns of individual channels optimized for occupancy, rate, and time/space resolution. The signal pickup antenna can be economically implemented as a printed circuit card with a 2-dimensional array of pads for high-occupancy/high-rate applications such as in particle colliders and medical imaging, or a 1-dimensional array of strips for a lower channel count in low-occupancy/low-rate applications such as large neutrino detectors. In this paper we present pad patterns that enhance signal-sharing between pads to lower the channel count per unit area in large-area systems by factors up to 4, while maintaining spatial resolutions of approximately 100 to 200 μ m for charged particles and 400 to 1000 μ m for single photons. Patterns that use multiple signal layers in the signal-pickup board can lower the channel count even further, moving the scaling behavior in the number of pads versus total area from quadratic to linear.