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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Unintended gas breakdowns in narrow gaps of advanced plasma sources for semiconductor fabrication industry

Occurrence of unintended gas breakdown in the narrow gaps of plasma processing chambers is one of the critical challenges in developing advanced plasma sources. Here, we present a combined experimental and theoretical study of unintended discharges in the narrow gaps of plasma processing chambers and report significant drop of the gas breakdown voltage in the presence of a background plasma facing the gap. Experimentally measured breakdown voltages decrease in subsequent breakdown events due to wall erosion caused by the discharge. Therefore, preventing and mitigating the first discharge is of paramount importance. An analysis of kinetic simulation results indicates that the charged particle influx from the background plasma in the processing chamber into the gap is responsible for the onset of early breakdown: higher charged particle density within the gap modifies the electric field profile, allowing unintended breakdowns to occur at a significantly reduced threshold voltage.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

High-fidelity modeling of breakdown in helium: initiation processes and secondary electron emission

Understanding the role of physical processes contributing to breakdown is critical for many applications in which breakdown is undesirable, such as capacitors, and applications in which controlled breakdown is intended, such as plasma medicine, lightning protection, and materials processing. The electron emission from the cathode is a critical source of electrons which then undergo impact ionization to produce electrical breakdown. In this study, the role of secondary electron yields due to photons (γ ph ) and ions (γ i ) in direct current breakdown is investigated using a particle-in-cell direct simulation Monte Carlo model. The plasma studied is a one-dimensional discharge in 50 Torr of pure helium with a platinum cathode, gap size of 1.15 cm, and voltages of 1.2–1.8 kV. The current traces are compared with experimental measurements. Larger values of γ ph generally result in a faster breakdown, while larger values of γ i result in a larger maximum current. The 58.4 nm photons emitted from He(2 1 P) are the primary source of electrons at the cathode before the cathode fall is developed. Of the values of γ ph and γ i investigated, those which provide the best agreement with the experimental current measurements are γ ph = 0.005 and γ i = 0.01. In this work, these values are significantly lower than those in the literature for pristine platinum or for a graphitic carbon film which we speculate may cover the platinum. This difference is in part due to the limitations of a one-dimensional model but may also indicate surface conditions and exposure to a plasma can have a significant effect on the secondary electron yields. The effects of applied voltage and the current produced by a UV diode which was used to initiate the discharge, are also discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Breakdown insensitive acceleration regime in a metamaterial accelerating structure

A new regime in radiofrequency (rf) breakdown, named the breakdown insensitive acceleration regime (BIAR), was observed in an 11.7 GHz metamaterial structure for wakefield acceleration driven by rf pulses with a duration of a few nanoseconds. In the BIAR, rf breakdown occurs without interrupting potential beam acceleration, resulting in greater resilience to breakdown. We have investigated the possibility that BIAR can support higher gradients by characterizing the breakdown in a high-power test. The peak gradient reached 190 MV / m when the structure was powered by 6 ns long rf pulses with 115 MW peak power. The short rf pulses were extracted from 65 MeV electron bunch trains with a total charge of up to 210 nC. This work has revealed the benefits of short-pulse acceleration by characterizing rf breakdown in the previously unexplored parameter space. Published by the American Physical Society 2024

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm 2 ) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed current of 3.5 A, an 8.3-mΩ$\cdot$cm 2 differential specific ON-resistance, and a 5.3-kV reverse breakdown. In addition, we report on a smaller area diode (0.063 mm 2 ) that is capable of 6.4-kV breakdown with a differential specific ON-resistance of 10.2 mΩ$\cdot$cm 2 , when accounting for current spreading through the drift region at a 45° angle. Finally, the demonstration of avalanche breakdown is shown for a 0.063-mm 2 diode with a room temperature breakdown of 5.6 kV. In this work, these results were achieved via epitaxial growth of a 50-μm drift region with a very low carrier concentration of <1×10 15 cm –3 and a carefully designed four-zone junction termination extension.

42 ENGINEERING↗
DOE OSTI2020

Fast rise breakdown in dielectric filled air gap for surge protection

Electric discharge across an air gap can be self-healing, providing a unique capability for repetitive, fast, high-voltage/current switching applications through arc conduction. Furthermore, incorporating dielectric granules in the air gap stimulates gas ionization, which lowers the breakdown voltage and narrows breakdown voltage distribution, thereby enabling engineered surge protection from multiple lightning strikes on aerospace vehicles and sensitive solid-state electronics in critical systems. This study investigates the effect of the permittivity of dielectric granules, gap filling, surface roughness, and metal work function on fast-rising, high-voltage breakdowns. In addition to the air gap width, these factors play important roles in gas ionization, field concentration, and initiation of electrical discharge and arcing. Therefore, they could potentially be used to control and narrow operational breakdown voltages for practical applications. Additionally, a modified Langevin–Debye model is developed to correlate the breakdown voltage and the permittivity of the dielectric filler. These investigations identify and highlight key underpinning mechanisms governing the gas discharge behavior across a dielectric filled air gap during voltage surge events.

42 ENGINEERING↗
DOE OSTI2021

Underwater plasma breakdown characteristics with respect to highly pressurized drilling applications

Deep earth drilling is a key technique to extract oil, gas, and geothermal heat from the earth. Many complex energy focusing methods have been explored as an alternative approach to reach these resources but most of them require high energy. However, by utilizing short time span liquid plasma discharges, energy focusing can be achieved within traditional drilling systems. These discharges induce a rapid expansion process and a resulting shockwave. It is believed that this focused energy will lower the required cutting force to progress through the rock. Lowering the required cutting force will allow for lower drill bit wear, quicker rate of penetration, and an overall cost savings of the project. Plasma breakdown characteristics at drilling relevant pressures, ranging from 1 to 350 atm, were studied. A resistance–capacitance circuit with an air gapped spark switch was utilized to generate pulsed plasma between the pressurized electrodes. It was found that the required breakdown voltage increases as the pressure increases. It was also found that a plasma channel formation and an associated breakdown may or may not occur between the electrodes at different pressures due to variation in required breakdown voltages. Breakdown time-lag in the dielectric medium (tap water, 780 μS cm –1 ) increased as the pressure was increased, which indicated a higher voltage drop at higher pressures (>100 atm). The plasma generated cavitation bubble with an associated shockwave occurred as pressures were increased. However, the bubble radius and the bubble duration decreased as the pressure was increased. The plasma generated shockwave speeds fall within the expected speed of sound in water. Lastly, preliminary rock cracking tests were performed on granite at high pressures (340 and 272 atm) and it was found that plasma is able to create cracks in the rock.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Hybrid BaTiO 3 /SiN x /AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance

In this Letter, we demonstrate hybrid GaN lateral Schottky barrier diodes with enhanced breakdown characteristics and a low turn-on voltage. These diodes incorporate a lateral Schottky barrier in combination with a high permittivity material beneath the field plate, enabling high average breakdown fields and a low turn-on voltage. Average electric fields up to 2.38 MV/cm were achieved for devices with an anode–cathode spacing of 4 μm, while maintaining with a turn-on voltage of 0.48 V. In contrast, SiN x /AlGaN/GaN control lateral Schottky diodes displayed an average breakdown field of ~0.7 MV/cm for devices with similar dimensions with a turn-on voltage of 0.46 V. The use of a high-permittivity dielectric can more effectively utilize the high breakdown fields in wide bandgap materials by proper management of the electric field. This demonstration provides an innovative way to integrate high-permittivity materials with GaN lateral devices for improved breakdown and resistance characteristics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Integration of high permittivity BaTiO 3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

In this Letter, we discuss AlGaN/GaN HEMTs integrated with high permittivity BaTiO 3 dielectric to enable enhanced breakdown characteristics. We show that using high permittivity BaTiO 3 dielectric layers in the gate and drain access regions prevents premature gate breakdown, leading to average breakdown fields exceeding 3 MV/cm at a gate-to-drain spacing of 4 μm. The higher breakdown fields enable a high power figure of merit above 2.4 GW/cm 2 in devices with a gate-to-drain spacing of 6 μm. This work demonstrates that electrostatic engineering using high-permittivity dielectrics can enable AlGaN/GaN HEMTs in approaching the material breakdown field limits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Controlling the breakdown delay time in pulsed gas discharge

Abstract In experiment and 2D3V PIC MCC simulations, the breakdown development in a pulsed discharge in helium is studied for U = 3.2 kV and 10 kV and P = 100 Torr. The breakdown process is found to have a stochastic nature, and the electron avalanche develops in different experimental and simulation runs with time delays ranging from 0.3 to 8 μ s. Nevertheless our experiments demonstrate that the breakdown delay time distribution can be controlled with a change of the pulse discharge frequency. The simulation results show that the breakdown process can be distinguished in three stages with (a) the ionization by seed electrons, (b) the ions drift to the cathode and (c) the enhanced ionization within the cathode sheath by the electrons emitted from the cathode. The effects of variation of seed electron concentrations, voltage rise times, voltage amplitudes and ion–electron emission coefficients on the breakdown development in the pulsed gas discharge are reported.

Schweigert, I. V. (ORCID:0000000223641228)↗
DOE OSTI2020

Encapsulant Void Breakdown Voltage Modeling & Experiments

For high voltage electrical devices, prevention of high voltage breakdown is critical for device function. Use of polymeric encapsulation such as epoxies is common, but these may include air bubbles or other voids of varying size. The present work aimed to model and experimentally determine the size dependence of breakdown voltage for voids in an epoxy matrix, as a step toward establishing size criteria for void screening. Effects were investigated experimentally for both one-dimensional metal/epoxy/air/epoxy/metal gap sizes from 50 μm to 10 mm, as well as spherical voids of 250 μm, 500 μm, 1 mm and 2 mm sizes. These experimental results were compared to modified Paschen curve and particle-in-cell discharge models; minimum breakdown voltages of 6 - 8.5 kV appeared to be predicted by 1D models and experiments, with minimum breakdown voltage for void sizes of 0.2 - 1 mm. In a limited set of 3D experiments on 250 μm, 500 μm, 1 mm and 2 mm voids within epoxy, the minimum breakdown voltages observed were 18.5 - 20 kV, for 500 μm void sizes. These experiments and models are aimed at providing initial size and voltage criteria for tolerable void sizes and expected discharge voltages to support design of encapsulated high voltage components.

42 ENGINEERING↗
DOE OSTI2023

Sources of Primary Electrons in Nanosecond Pulsed Breakdown in Water (Final Technical Report)

Electrical breakdown of liquid dielectrics under ns or sub-ns pulsed electric field has been studied extensively in the last decade. Summarized in [7], this relatively young research area makes significant contributions to the theories of liquid breakdown by introducing a new mechanism (electrostrictive cavitation) that is unique at the ns timescale. It is also fundamentally important to plasma sources for biomedical applications and insulation of pulsed power equipment. For water in particular, the understanding of the mechanisms and processes of ns/sub-ns breakdown also sheds new light on cavitation studies, one of the most exciting areas of modern fluid mechanics. The objective of this collaborative research with PCRF was to construct a complete picture of the physical mechanisms and processes at the initial phase of electrical breakdown in liquid dielectrics under nanosecond (ns) pulsed inhomogeneous fields. The research funded by the initial award DE‐ SC0021182 aimed to address the sources of primary electrons in ns breakdown in water, which led to one journal publication and multiple conference presentations. The PI also gave presentations to the PPPL/PCRF audience twice, one in October 2020 and the other during the 2021 PCRF Annual Meeting

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Understanding the electromagnetic topology during the ohmic breakdown in tokamaks considering self-generated electric fields

We report that the physical mechanisms of the ohmic breakdown in a tokamak have been understood based on the classical Townsend avalanche theory. However, a new systematic theory (Yoo et al 2018 Nat. Commun.9 3523) recently demonstrated that electron avalanches during the ohmic breakdown are completely different from the Townsend avalanche due to strong self-generated electric fields. In this study, we elucidate the multi-dimensional effects of the self-generated electric field on plasma dynamics during the ohmic breakdown. We also propose a novel electromagnetic topology analysis method that can easily predict the overall plasma behavior and where the main plasma is generated. The topology analysis method is validated by a state-of-art particle simulation for various magnetic configurations. New physical insights into the complex electromagnetic topology would facilitate designing more reliable and optimized ohmic breakdown scenarios in future tokamaks, such as ITER and beyond.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Understanding the Breakdown Behavior of Ultrawide-Bandgap Boron Nitride Power Diodes Using Device Modeling

Herein, a device study using technology computer-aided design simulation to theoretically analyze the electrical performance of ultrawide-bandgap boron nitride (BN)-based vertical junction devices is performed, including h-BN Schottky diode, h-BN pn diode, and h-BN/AlN pn diode; this is also the first demonstration of the BN power devices in simulation. The material properties of BN are defined with recently reported data, and the physical mechanisms of the device performance are systematically investigated. Additionally, the h-BN junctions in this simulation shows excellent performance, especially for breakdown behaviors. Schottky diode shows a turn-on voltage of 0.6 V for Pt Schottky contact and breakdown voltages over 450 V for 5 μm, 6 × 10 15 cm –3 p-type-doped drift layer; The h-BN pn diode shows a turn-on voltage of 6 V and breakdown voltages over 3 kV with a critical electric field of 13.6 MV cm –1 for 2.5 μm, 2 × 10 16 cm –3 p-type-doped drift layer. The h-BN/AlN heterojunction pn diode shows a turn-on voltage of 5.8 V and breakdown voltage over 2 kV for 2.5 μm, 2 × 10 16 cm –3 n-type-doped AlN drift layer. Herein, an understanding of the device principles of vertical BN junctions is provided, which can serve as a reference for the future development of robust BN power electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Core-scale numerical simulation and comparison of breakdown of shale and resulting fractures using sc-CO 2 and water as injectants

Supercritical carbon dioxide (sc-CO 2 ) is an alternative to water for stimulation of low permeability systems such as shale gas and geothermal resources. Previously core-scale experimental studies have compared the behavior of CO 2 to water injection for sample breakdown. Due to differences in experimental setup and core sample preparation, inconsistent or even apparently contradictory conclusions have resulted. To reconcile this contradiction, a phase-field numerical model is applied to understand hydraulic fracturing experiments using Green River shale found in the literature. The finite element numerical model incorporates a rate-dependent phase-field fracture model developed separately to describe fracture initiation and growth. We investigate the impact of various material and fluid properties on the resulting fractures. Most importantly, we study the effect of fluid properties and boundary conditions on the breakdown pressure, including the direction of the resulting fracture plane. Model results predict that (1) sc-CO 2 injection in the laboratory may result in greater breakdown pressure than that of water under no-flow boundary conditions because lower viscosity sc-CO 2 may result in pressure build up at the core boundary that opposes fracture initiation and (2) lower viscosity sc-CO 2 also produces fast-propagating fractures that are less influenced by the bedding plane on their resulting fracture topology. Here our model offers a straightforward explanation and reconciliation of existing experimental observations, as well as a means to extrapolate to new conditions. Exploration of field-scale conditions suggests less pronounced or no elevation in breakdown pressure when sc-CO 2 is injected because the pressure build up effect at the system boundary is significantly less or absent at field length scales.

42 ENGINEERING↗
DOE OSTI2025

How non-ohmic contact-layer diodes in perovskite pinholes affect abrupt low-voltage reverse-bias breakdown and destruction of solar cells

Perovskite solar cells (PSCs) rapidly degrade under reverse bias, a condition that may occur during partial shading. Here, in this study, we use electrical measurements, electron microscopy, and optical and thermal imaging to investigate abrupt breakdown and hotspotting under low reverse potentials (<|-2| V). We show that microscopic pinholes in the perovskite layer cause rapid, destructive breakdown under reverse bias despite minimally reducing power conversion efficiencies. Measurements on miniature (200-micrometer diameter) PSCs and perovskite-free transport-layer diodes indicate that abrupt, low-voltage breakdown occurs in nanoscale to micrometer-scale defects and that metal migration and filamentation are unlikely causes. Reverse-bias stability substantially improves when pinholes in the perovskite and transport layers are eliminated. Atomic layer deposition of tin oxide prevents abrupt breakdown by ensuring physical separation between electrodes-not by blocking metal ion migration. Perovskite researchers should adopt cleaner, more uniform deposition techniques to enable robust PSCs for further research and commercial applications.

14 SOLAR ENERGY↗
DOE OSTI2020

Timescales and Processes of Methane Hydrate Formation and Breakdown, With Application to Geologic Systems

Abstract Gas hydrate is an ice‐like form of water and low molecular weight gas stable at temperatures of roughly −10°C to 25°C and pressures of ~3 to 30 MPa in geologic systems. Natural gas hydrates sequester an estimated one sixth of Earth's methane and are found primarily in deepwater marine sediments on continental margins, but also in permafrost areas and under continental ice sheets. When gas hydrate is removed from its stability field, its breakdown has implications for the global carbon cycle, ocean chemistry, marine geohazards, and interactions between the geosphere and the ocean‐atmosphere system. Gas hydrate breakdown can also be artificially driven as a component of studies assessing the resource potential of these deposits. Furthermore, geologic processes and perturbations to the ocean‐atmosphere system (e.g., warming temperatures) can cause not only dissociation, but also more widespread dissolution of hydrate or even formation of new hydrate in reservoirs. Linkages between gas hydrate and disparate aspects of Earth's near‐surface physical, chemical, and biological systems render an assessment of the rates and processes affecting the persistence of gas hydrate an appropriate Centennial Grand Challenge. This paper reviews the thermodynamic controls on methane hydrate stability and then describes the relative importance of kinetic, mass transfer, and heat transfer processes in the formation and breakdown (dissociation and dissolution) of gas hydrate. Results from numerical modeling, laboratory, and some field studies are used to summarize the rates of hydrate formation and breakdown, followed by an extensive treatment of hydrate dynamics in marine and cryospheric gas hydrate systems.

58 GEOSCIENCES↗
DOE OSTI2020

Cherenkov-type three-dimensional breakdown behavior of the Bloch-point domain wall motion in the cylindrical nanowire

A three-dimensional breakdown behavior of the magnetic Bloch-point domain wall (BP-DW) propagation was investigated in a ferromagnetic nanowire with the variation of the external magnetic field by means of micromagnetic simulation. As magnetic field strength increases up to a threshold value, the BP-DW velocity approaches a critical phase velocity of the spontaneously emitting spin wave (SW), where a Cherenkov-type DW breakdown phenomenon is observed originating from an interaction between the spontaneously emitting SW and the BP-DW. It is found that the velocity of the BP-DW approaches a maximum value (~2000 m/s) due to the intrinsic reversal time of a BP spin texture. This suggests that although cylindrical ferromagnetic nanowires might be free from the two-dimensional Walker breakdown phenomenon, there exists a Cherenkov-type three-dimensional breakdown behavior.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Breakdown characteristics of deep-ultraviolet Al 0.6 Ga 0.4 N p-i-n avalanche photodiodes

A top-illuminated deep-ultraviolet Al 0.6 Ga 0.4 N p-i-n avalanche photodiode (APD) structure was designed and grown by metalorganic chemical vapor deposition on an AlN bulk substrate and on two different quality AlN/sapphire templates, and APDs were fabricated and tested. The APD devices with a circular diameter of 20 μm have demonstrated a distinctive reverse-bias breakdown behavior. The reverse breakdown voltage of the APDs is approximately -140 V, which corresponds to a breakdown electric field of 6–6.2 MV/cm for the Al 0.6 Ga 0.4 N material as estimated by Silvaco TCAD simulation. The APDs grown on the AlN bulk substrate show the lowest leakage current density of < 1 × 10 -8 A/cm 2 (at low reverse bias) compared to that of the devices grown on the AlN templates. From the photocurrent measurement, a maximum gain (current limited) of 1.2 × 10 4 is calculated. The average temperature coefficients of the breakdown voltage are negative for APD devices fabricated from both the AlN bulk substrate and the AlN templates, but these data show that the coefficient is the least negative for the APD devices grown on the low-dislocation-density AlN bulk substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗