Vertical Bloch Line Storage Technology
Vertical Bloch Line storage is an emerging technology which has the potential for offering a number of desired data storage attributes in a single chip.
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Vertical Bloch Line storage is an emerging technology which has the potential for offering a number of desired data storage attributes in a single chip.
An algorithm has been developed that solves the semiconductor Maxwell-Bloch equations, without making the standard slowly-varying envelope (SVEA) and rotating-wave (RWA) approximations. It is applied to study the propagation of ultrashort pulses in semiconductor materials. The results include many-body effects due to the Coulomb interaction among the charge carriers as well as the nonlinear effects resulting from spectral hole-burning.
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VBL technology potentially offers a variety of desirable data storage technology attributes for a variety of applications.
An approach for studying atom-radiation interaction has been developed, associating quantum operators with stochastic variables governed by discrete Heisenberg equations. This framework models general multilevel atomic systems using the paraxial approximation in both single- and multipass configurations. Simulation results for x-ray laser oscillators with parameters of interest are presented. Finally, the stochastic model is efficient to solve, as the required computational resources scale linearly with the number of emitters, and it may be applicable to various other quantum systems.
LF creep characteristics in Block-wall Permalloy films, using high resolution Bitter pattern technique
The phenomenon of wall contraction characterized by a peak in the velocity field relationship and a region of negative differential mobility is observed. Uniaxial magnetic thin films of various compositions and magnetic properties are studied in careful interrupted pulse experiments. The observed results agree quite well with the theory for bulk samples.
The phenomenon of wall contraction characterized by a peak in the velocity-field relationship and a region of negative differential mobility is observed in uniaxial magnetic thin films of various magnetic properties by careful interrupted-pulse experiments. The observed results agree quite well with the theory for bulk samples when the extensive flux closure of thin film walls is accounted for by a suitable empirical scaling factor.
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Bias field stability ranges were measured and numerically simulated for magnetic domains ingarnets stabilized by partially grooved rectangular and ring grooves. Simulation results agreefavorably with experimental results when finite slope effects of the groove walls are included. Asbias fields increase, rectangular and ring domains both destabilize through stripe head recession. Asbias fields decrease, destabilization in rectangular domains occurs by runout, while destabilization inring domains occurs by midstripe domain buckling. While ring domains are stable at lower biasfields than rectangular domains, bias field stability ranges are approximately equal. Hence, for thesame partial grooving depth, rectangular domains are preferred because they offer higher storagedensity potential in Vertical Block Line (VBL) storage arrays as long as bit propagation margins atstripe ends are sufficient.
No storage technology is known to exist today which simultaneously offers high-storage density, nonvolatility, and a solid-state form factor. For example, common random access memories are solid-state, but are volatile and typically offer modest density. Alternatively, mainstream magnetic disk and magnetic tape systems offer high storage density and nonvolatility, but are fundamentally not solid-state. A number of applications exist which would be suited well with high performance solid- state technology. NASA, for example, is beginning baseline solid-state recorders for upcoming space missions, such as the Cassini mission to Saturn.
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Overview/ Technology description review: Functional goals. Performance ranges. VBL operability review.
Field-free spin-orbit torque-driven domain wall motion in magnetic thin films with perpendicular magnetic anisotropy (PMA) requires the domain walls to have Néel character. Conventionally, Néel domain walls are stabilized by the Dzyaloshinskii-Moriya interaction (DMI) in ultrathin films. Here, in a europium iron garnet thin film with PMA and an additional uniaxial in-plane anisotropy, we demonstrate two bistable Néel domain wall states in the absence of DMI, and the capability to toggle the wall states with an in-plane field pulse and consequently their directions of motion under a current pulse. We present a phase diagram for the bistable Néel domain wall states as a function of in-plane field pulse width and amplitude. By fitting the experimental data to an analytical model of Néel wall reversal through the nucleation and propagation of Bloch lines, we extract the length of the initial reversed domain wall segment and Bloch line nucleation energy barrier. Current-driven motion of in-plane anisotropy stabilized Néel walls is qualitatively different from that of DMI-stabilized ones owing to the different symmetry of the effective fields that stabilize the Néel configuration. Furthermore, we present a proof of principle demonstration for 2-bit random number generation based on the stochastic reversal of domain wall chirality. These results provide critical insight into the topological energy barrier of Bloch lines and identify paths towards domain wall-based memory and computing devices.
Corrections to the Z-squared dependence of ion chamber and Cherenkov response due to the Mott cross section are calculated for the HEAO-3 Heavy Cosmic Ray Experiment. The effect of the production and escape of high energy secondary electrons on detector response is accounted for by numerical calculations. These secondary electron effects are shown to influence the size of the non Z-squared effects and thus affect the charge assignments and detector resolution. The Bloch and relativistic Bloch corrections are not included in the results presented here but may be combined with the Mott corrections when the Bloch corrections are properly evaluated.
Magnetic skyrmions are topologically protected quasi-particles with a well-defined chirality. Control over their chirality is proposed as an additional feature for encoding data bits or as qubits in quantum computing due to their high efficiency and stability against achiral magnetic textures. Here it is shown that an in-plane magnetic field can be utilized to reshape the energy barriers between different skyrmionic bubbles (e.g., Bloch type, type-II) enabling spontaneous chirality fluctuations with a frequency that increases with the strength of the in-plane field. The insulating van der Waals ferromagnet CrBr3 is used as an archetypal system for low damping, reduced energy dissipation and a high number of magnetic phases to capture the chirality dynamics in real time through cryo-Lorentz transmission electron microscopy. It is observed that the interplay between the intrinsic Dzyaloshinskii–Moriya interaction and out-of-plane field biased the chirality dynamics, favoring one handedness over the other. A remarkable consequence of the spontaneous chirality switching mechanism is that it induces a freezing (or crystallization) process in the skyrmion lattice. As the bubbles fluctuate between Bloch and type-II they elongate and shrink parallel to the in-plane field. Subsequently, the overall lattice crystallizes along the in-plane field direction, inducing a phase transition from a disordered liquid state to a hexatic phase where skyrmions are highly ordered resembling that of a solid. The results indicate chirality as an active element in the creation of topologically protected skyrmion crystals unveiling pathways toward chiral spintronic device platforms with tunable embedded configuration.
Abstract Exceptional points (EPs)—singularities in the parameter space of non-Hermitian systems where two nearby eigenmodes coalesce—feature unique properties with applications such as sensitivity enhancement and chiral emission. Existing realizations of EP lasers operate with static populations in the gain medium. By analyzing the full-wave Maxwell–Bloch equations, here we show that in a laser operating sufficiently close to an EP, the nonlinear gain will spontaneously induce a multi-spectral multi-modal instability above a pump threshold, which initiates an oscillating population inversion and generates a frequency comb. The efficiency of comb generation is enhanced by both the spectral degeneracy and the spatial coalescence of modes near an EP. Such an “EP comb” has a widely tunable repetition rate, self-starts without external modulators or a continuous-wave pump, and can be realized with an ultra-compact footprint. We develop an exact solution of the Maxwell–Bloch equations with an oscillating inversion, describing all spatiotemporal properties of the EP comb as a limit cycle. We numerically illustrate this phenomenon in a 5-μm-long gain-loss coupled AlGaAs cavity and adjust the EP comb repetition rate from 20 to 27 GHz. This work provides a rigorous spatiotemporal description of the rich laser behaviors that arise from the interplay between the non-Hermiticity, nonlinearity, and dynamics of a gain medium.
Rod-shaped Fe5C2 and core/shell Fe5C2/SiO2 nanocrystals were synthesized via a solution-based chemical method. Structural analysis confirmed the monoclinic phase of Fe5C2 with space group C2/c. Zero-field-cooling (ZFC) and field-cooling (FC) magnetization curves revealed distinct magnetic behaviors: uncoated Fe5C2 exhibited a low-temperature FC plateau indicative of strong dipolar interactions, while Fe5C2/SiO2 showed a monotonic increase in FC magnetization, suggesting reduced dipolar interactions due to SiO2 surface passivation. Isothermal remanent magnetization (IRM) and DC demagnetization (DCD) measurements supported this trend, with δM plots confirming weaker dipolar interactions in the coated sample. Bloch’s law fitting of temperature-dependent saturation magnetization showed a smaller Bloch’s constant for pure Fe5C2 and a larger value for Fe5C2/SiO2, reflecting enhanced surface disorder and reduced exchange coupling in the latter. Notably, Fe5C2/SiO2 demonstrated increased coercivity, attributed to decreased dipolar interaction and elevated surface anisotropy. Kneller’s law fitting yielded higher blocking temperatures for Fe5C2 (476 K) than Fe5C2/SiO2 (456 K), highlighting the impact of dipolar interactions on magnetic relaxation. These findings illustrate how SiO2 coatings effectively modulate dipolar interactions and enhance coercivity in Fe5C2 nanocrystals.