Buried Layer Low Gain Avalanche Diodes
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Apresyan, Artur↗
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Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch
One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al 2 O 3 /Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.
42 ENGINEERING↗
GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment
Traditional mesa terminations require precise angle design to reduce the electric field at the edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a premature breakdown. This work proposes the use of easy-to-implement hydrogen plasma treatment to solve the premature breakdown caused by mesa and demonstrates the avalanche capability in GaN-on-GaN p-i-n diodes. The breakdown electric field when the avalanche occurred was ∼2.3 MV/cm at room temperature for a GaN drift layer with a doping concentration of ∼7 × 1015 cm−3, which is consistent with the theoretical value. The temperature coefficient of the avalanche breakdown voltage of the devices was 4.64–4.85 × 10−4 K−1. This work shows a simple and effective approach to achieve avalanche capability in vertical GaN power devices, which can serve as an important reference for the future development of efficient and robust GaN power electronics.
Fu, Kai (ORCID:0000000294057512)↗
X-ray spectroscopy with silicon pin and avalanche photo diodes
Results of an evaluation of silicon P-Intrinsic-N (PIN) photodiodes and Avalanche Photodiodes (APD) for the direct detection of soft x rays from 1 to 20 keV and for the detection of scintillation light output from CsI(TI) for higher x ray energies (30 to 1000 keV) are presented. About one keV resolution was achieved at room temperature for both the PIN and APD detectors for soft x rays (1 to 20 keV). Commercially available, low power (18 mV), low noise, hybrid preamplifiers, were used. These photodiodes were also coupled to CsI(TI) scintillator and obtained about 6 resolution at 662 keV. The photodiode frequency response matches well with the emission spectrum of the CsI(TI) scintillator providing good spectral resolution and a higher signal than NaI(TI) when viewed by conventional photomultipliers. A PIN-CsI(TI) combination provides a low energy threshold of around 60 keV while for the APD-CsI(TI) it is 15 keV.
Desai, U. D.↗
Simple cryogenic temperature regulator - The Zener diode
For obtaining optimum performance from cooled infrared detectors used in astronomy, it is often necessary to operate the preamplifier transistor (usually a JFET) at a higher temperature than that provided by the cryogen. Various means of elevating the temperature of the FET above the temperature of its environment are considered. A description is presented of a method which uses a 10 V Zener diode (actually an avalanche diode) as a self-stabilizing heater element. The diode is mounted in good thermal contact with the FET, and both are isolated from the work surface by a link of poor conductivity. The diode is driven by a stable, constant voltage power supply.
Storey, J. W. V.↗
Small-signal model with frequency-independent elements for the avalanche region of a microwave negative-resistance diode
Microwave negative resistance diode avalanche region, deriving four element incremental signal model
Peterson, D. F.↗
Metasurface-Coupled Avalanche Photo Diode
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36 MATERIALS SCIENCE↗
AC-LGADs Fermilab front-end electronics characterization
Here, we characterized the front-end electronics used to process high-frequency signals from low-gain avalanche diodes (LGADs) at the Fermilab Test Beam Facility. LGADs are silicon detectors employed for charged particle tracking, offering exceptional spatial and temporal resolution. The purpose of this characterization was to understand how the time resolution is influenced by the front-end electronics. To achieve this, we developed a setup capable of generating input signals with varying amplitudes. The output results demonstrated that signal processing by the front-end electronics plays a crucial role in enhancing time resolution. We showed that the time resolution achieved by the FEE board is better than 2 p s at the 1 σ level.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
The blocking probability of Geiger-mode avalanche photo-diodes
When a photo is detected by a Geiger-mode avalanche photo-diode (GMAPD), the detector is rendered inactive, or blocked, for a certain period of time. In this paper we derive the blocking probability for a GMAPD whose input is either an unmodulated, Benoulli modulated or pulse-position-modulated Poisson process.
optical reflector↗
How to squeeze high quantum efficiency and high time resolution out of a SPAD
We address the issue whether Single-Photon Avalanche Diodes (SPADs) can be suitably designed to achieve a trade-off between quantum efficiency and time resolution performance. We briefly recall the physical mechanisms setting the time resolution of avalanche photodiodes operated in single-photon counting, and we give some criteria for the design of SPADs with a quantum efficiency better than l0 percent at 1064 nm together with a time resolution below 50 ps rms.
Lacaita, A.↗
Gain characterization of LGAD sensors with beta particles and 28-MeV protons
Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are silicon-based and feature an intrinsic gain due to a p + -doped layer that allows the production of a controlled avalanche of carriers, with multiplication on the order of 10–100. This technology can provide time resolution on the order of 20–30 ps, and variants of this technology can provide precision tracking too. The characterization of LGAD performance has so far primarily been focused on the interaction of minimum ionizing particles for high energy and nuclear physics applications. This article expands the study of LGAD performance to highly-ionizing particles, such as 28-MeV protons, which are relevant for several future scientific applications, e.g. in biology and medical physics, among others. These studies were performed with a beam of 28-MeV protons from a tandem Van de Graaff accelerator at Brookhaven National Laboratory and beta particles from a ^90Sr source; these were used to characterize the response and the gain of an LGAD as a function of bias voltage and collected charge. Here, the experimental results are also compared to TCAD simulations.
47 OTHER INSTRUMENTATION↗
InGaAsP Avalanche Photodetectors for Non-Gated 1.06 micrometer Photon-Counting Receivers
The efficient detection of single photons at 1.06 micron is of considerable interest for lidar/ladar systems designed for remote sensing an d ranging as well as for free-space optical transmission in photon-st arved applications. However, silicon-based single photon avalanche diodes (SPADs) used at shorter wavelengths have very low single photon d etection efficiency (approximately 1 - 2%) at 1.06 micron, and InP/In GaAs SPADs designed for telecommunications wavelengths near 1.5 micro n exhibit high dark count rates that generally inhibit non-gated (free-running) operation. To bridge this "single photon detection gap" for wavelengths just beyond 1 micron, we have developed high performance , large area (80 - 200 micron diameter) InP-based InGaAsP quaternary absorber SPADs optimized for operation at 1.06 micron and based on a highly reliable planar geometry avalanche photodiode structure. We wil l show that dark count rates are sufficiently low to allow for non-ga ted operation while achieving detection efficiencies far surpassing t hose found for Si SPADs. At a detection efficiency of 10%, 80 micron diameter devices exhibit dark count rates below 1000 Hz and count rate s of at least 3 MHz when operated at -40 C. Significantly higher dete ction efficiencies (30 - 50%) are achievable with acceptable tradeoff s in dark count rate. In this paper, we will also discuss performance modeling for these devices and compare their behavior with longer wav elength InP-based InGaAs ternary absorber SPADs fabricated on a relat ed device design platform.
Itzler, Mark A.↗
LGAD-Based Silicon Sensors for 4D Detectors
Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun.
spatial resolution↗
Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the n+ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the n+ doping profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between 2.5μm for 70–100 pad-pitch geometry and 17μm with 200–500 matrices, a factor of 10 better than what is achievable in binary read-out (bin size/12). Beam test data show a temporal resolution of ~40ps for 200 μm pitch devices, in line with the best performances of LGAD sensors at the same gain.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Advanced silicon tracking detector developments for the future Electron-Ion Collider
The proposed Electron-Ion Collider (EIC) will operate high-luminosity high-energy electron+proton and electron+nucleus collisions at the collision energies from 20 GeV to 141 GeV to solve several fundamental questions in the high energy and nuclear physics fields. Its instantaneous luminosity can reach 10 33-34 cm -2 s -1 and the bunching crossing rate is around 10 ns. The EIC project has received CD1 approval from the US DOE in 2021 and moves toward the machine design and preparation for construction. To realize various particle measurements with high precision at the future EIC, a low material-budget and high-granularity silicon vertex and tracking detector with fine spatial and momentum resolutions and nearly 4π solid angle coverage is desired. The Monolithic Active Pixel Sensor (MAPS) and AC Coupled Low Gain Avalanche Diode (AC-LGAD) technologies stand out of several advanced technology options for the EIC silicon vertex and tracking detector subsystems. The MAPS technology has advanced features of low material budget, low power consumption, good radiation resistance and fine spatial resolution. The AC-LGAD technology can achieve fast timing resolution. Latest studies and progress of the EIC silicon vertex and tracking detector conceptual design, performance validations in simulation and ongoing MAPS and AC-LGAD R&D will be shown. Furthermore, schedule and plan of the EIC project detector development will be discussed as well.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Multifrequency-resolved Hanbury Brown–Twiss effect
The Hanbury Brown–Twiss (HBT) effect holds a pivotal place in intensity interferometry and gave a seminal contribution to the development of quantum optics. To observe such an effect, both good spectral and timing resolutions are necessary. Most often, the HBT effect is observed for a single frequency at a time due to its limitations in dealing with multifrequencies simultaneously, halting and limiting some applications. Here, we report a fast and data-driven spectrometer built with a one-dimensional array of single-photon-sensitive avalanche diodes. We report observing the HBT effect for multiple frequencies at the same time. In particular, we observe the HBT effect for up to five lines of the Ne spectrum, but this can be improved upon to include more lines. Our work represents a major step in making spectral binning and multifrequency HBT more widely available. The technology we present can benefit both classical and quantum applications.
79 ASTRONOMY AND ASTROPHYSICS↗
Characterization of the DUNE photodetectors and study of the event burst phenomenon
The Deep Underground Neutrino Experiment (DUNE) is an upcoming neutrino physics experiment that will answer some of the most compelling questions in particle physics and cosmology. The DUNE far detectors employ silicon photomultipliers (SiPMs) to detect light produced by charged particles interacting in a large liquid argon time projection chamber (LArTPC). The SiPMs are photosensors consisting of an array of single-photon avalanche diodes (SPAD) operating in Geiger mode. Their high sensitivity and dynamic range, as well as the possibility to fill large surfaces with high-granularity sensors, makes them an ideal choice for DUNE. An international consortium of research groups is currently engaged in a systematic comparison of the performances of the SiPM models that have been custom developed for DUNE by two manufacturers. Such detailed studies, which include gain measurements and a structure study of the dark count rate at 77 K, are meant to determine the best choice of the photodetection system for DUNE, as well as characterize the response of the chosen detectors for the DUNE simulation. Moreover, an investigation of a newly observed phenomenon, in which quick bursts of tens of events at close range are collected in individual SiPMs, is being carried out, which potentially impacts the design of future models and their implementation in particle physics experiments.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Single electron in a storage ring: a probe into the fundamental properties of synchrotron radiation and a powerful diagnostic tool
An experimental study of undulator radiation generated by a single electron was carried out at the Integrable Optics Test Accelerator (IOTA) storage ring at Fermilab. Photons were detected with a single-photon avalanche diode (SPAD) at an average rate of 20 kHz, corresponding to one detection every few hundred revolutions. Events were continuously recorded by a picosecond event timer for as long as 5 minutes at a time. The collected data were used to directly test the predictions of classical Poisson photostatistics. The study was motivated in part by a previous observation of sub-Poissonian statistics in a similar experiment with synchrotron radiation. In addition, we show that the time series of recorded events can be used to study the synchrotron motion of a single electron, yielding dynamical parameters such as the phase jitter of the radiofrequency cavity and the dependence of the synchrotron period on amplitude. Research plans for further experiments are also discussed.
47 OTHER INSTRUMENTATION↗