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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Power Electronics Being Developed for Deep Space Cryogenic Applications

Electronic circuits and systems designed for deep space missions need to operate reliably and efficiently in harsh environments that include very low temperatures. Spacecraft that operate in such cold environments carry a large number of heaters so that the ambient temperature for the onboard electronics remains near 20 C. Electronics that can operate at cryogenic temperatures will simplify system design and reduce system size and weight by eliminating the heaters and their associated structures. As a result, system development and launch cost will be reduced. At the NASA Glenn Research Center, an ongoing program is focusing on the development of power electronics geared for deep space low-temperature environments. The research and development efforts include electrical components design, circuit design and construction, and system integration and demonstration at cryogenic temperatures. Investigations are being carried out on circuits and systems that are targeted for use in NASA missions where low temperatures will be encountered: devices such as ceramic and tantalum capacitors, metal film resistors, semiconductor switches, magnetics, and integrated circuits including dc/dc converters, operational amplifiers, voltage references, and motor controllers. Test activities cover a wide range of device and circuit performance under simple as well as complex test conditions, such as multistress and thermal cycling. The effect of low-temperature conditions on the switching characteristics of an advanced silicon-on-insulator field effect transistor is shown. For gate voltages (VGS) below 2.6 V, drain currents at -190 C are lower than drain currents at room temperature (20 C).

Patterson, Richard L.↗
NASA NTRS1995

Applications of Silicon Carbide for High Temperature Electronics and Sensors

Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology.

Silicon Carbide↗
NASA NTRS1980

Nuclear electro-optic power

Tertiary-nuclear power cell utilizes alpha source from which radiated particles strike phosphore which in turn emits photons that are converted to electricity by solar cell. Experiments indicated that device is capable of providing sufficient power for numerous electronic applications where reliability and long life are important.

Singh, J. J.↗
NASA NTRS2002

Comprehensive Evaluation of Power Supplies at Cryogenic Temperatures for Deep Space Applications

The operation of power electronic systems at cryogenic temperatures is anticipated in many future space missions such as planetary exploration and deep space probes. In addition to surviving the space hostile environments, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. DC/DC converters are widely used in space power systems in the areas of power management, conditioning, and control. As part of the on-going Low Temperature Electronics Program at NASA, several commercial-off-the-shelf (COTS) DC/DC converters, with specifications that might fit the requirements of specific future space missions have been selected for investigation at cryogenic temperatures. The converters have been characterized in terms of their performance as a function of temperature in the range of 20 C to - 180 C. These converters ranged in electrical power from 8 W to 13 W, input voltage from 9 V to 72 V and an output voltage of 3.3 V. The experimental set-up and procedures along with the results obtained on the converters' steady state and dynamic characteristics are presented and discussed.

Patterson, Richard L.↗
NASA NTRS2015

CarbAl Heat Transfer Material

The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.

Fink, Richard↗
NASA NTRS2024

Electron Beam Welding of Additively Manufactured Niobium Alloy Heat Pipes

Additively manufactured refractory alloy-liquid metal heat pipes are being developed and tested for thermal management systems within nuclear propulsion and power applications. This study investigated electron beam (EB) welded joints on a laser powder bed fusion printed niobium alloy (C-103) and the impact of multiple joined heat pipe sections on working fluid flow and container leak-tightness. Results showed that EB welded joints connecting multiple heat pipe sections do not impact working fluid wicking behavior and the printed C-103 material and the EB welds joining the tubular sections created a leak-tight container. Interestingly, CT data showed an order of magnitude greater number and volume of porosity indications in the ground mating surface weld compared to the as-printed mating surface weld. The work concluded that AM is a viable manufacturing process for niobium alloy heat pipes and provided valuable insights for future AM heat pipe research and development.

Electron beam welding↗
NASA NTRS1997

Development of Power Electronics for a 0.2kW-Class Ion Thruster

Applications that might benefit from low power ion propulsion systems include Earth-orbit magnetospheric mapping satellite constellations, low Earth-orbit satellites, geosynchronous Earth-orbit satellite north-south stationkeeping, and asteroid orbiters. These spacecraft are likely to have masses on the order of 50 to 500 kg with up to 0.5 kW of electrical power available. A power processing unit for a 0.2 kW-class ion thruster is currently under development for these applications. The first step in this effort is the development and testing of a 0.24 kW beam power supply. The design incorporates a 20 kHz full bridge topology with multiple secondaries connected in series to obtain outputs of up to 1200 V(sub DC). A current-mode control pulse width modulation circuit built using discrete components was selected for this application. An input voltage of 28 +/- 4 V(sub DC) was assumed, since the small spacecraft for which this system is targeted are anticipated to have unregulated low voltage busses. Efficiencies in excess of 91 percent were obtained at maximum output power. The total mass of the breadboard was less than 1.0 kg and the component mass was 0.53 kg. It is anticipated that a complete flight power processor could weigh about 2.0 kg.

Pinero, Luis R.↗
NASA NTRS2001

Silicon Carbide Solar Cells Investigated

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Bailey, Sheila G.↗
NASA NTRS1996

NSTAR Ion Propulsion System Power Electronics

The NASA Solar Electric Propulsion Technology Application Readiness (NSTAR) program, managed by the Jet Propulsion Laboratory (JPL), is currently developing a high performance, simplified ion propulsion system. This propulsion system, which is throttleable from 0.5- to 2.3-kW output power to the thruster, targets primary propulsion applications for planetary and Earth-space missions and has been baselined as the primary propulsion system for the first New Millennium spacecraft. The NASA Lewis Research Center is responsible for the design and delivery of a breadboard power processing unit (PPU) and an engineering model thruster (EMT) for this system and will manage the contract for the delivery of the flight hardware to JPL. The PPU requirements, which dictate a mass of less than 12 kg with an efficiency of 0.9 or greater at a 2.3-kW output, forced a departure from the state-of-the-art ion thruster PPU design. Several innovations--including dual-use topologies, simplified thruster control, and the use of ferrite magnetic materials--were necessary to meet these requirements.

Source record↗
NASA NTRS1997

Low-Temperature Power Electronics Program

Many space and some terrestrial applications would benefit from the availability of low-temperature electronics. Exploration missions to the outer planets, Earth-orbiting and deep-space probes, and communications satellites are examples of space applications which operate in low-temperature environments. Space probes deployed near Pluto must operate in temperatures as low as -229 C. Figure 1 depicts the average temperature of a space probe warmed by the sun for various locations throughout the solar system. Terrestrial applications where components and systems must operate in low-temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation system, and arctic exploration. The development of electrical power systems capable of extremely low-temperature operation represents a key element of some advanced space power systems. The Low-Temperature Power Electronics Program at NASA Lewis Research Center focuses on the design, fabrication, and characterization of low-temperature power systems and the development of supporting technologies for low-temperature operations such as dielectric and insulating materials, power components, optoelectronic components, and packaging and integration of devices, components, and systems.

Patterson, Richard L.↗
NASA NTRS1987

Annual Battery Conference on Applications and Advances, 2nd, California State University, Long Beach, Jan. 14-16, 1986, Proceedings

Various papers on battery applications and advances are presented. The general topics considered include: power systems in biomedical applications, batteries in electronic and computer applications, batteries in transportation and energy systems, space power systems, aircraft power systems, applications in defense systems, battery safety issues, and quality assurance and manufacturing.

Das, R. L.↗
NASA NTRS2008

Electronic Components for use in Extreme Temperature Aerospace Applications

Electrical power management and control systems designed for use in planetary exploration missions and deep space probes require electronics that are capable of efficient and reliable operation under extreme temperature conditions. Space-based infra-red satellites, all-electric ships, jet engines, electromagnetic launchers, magnetic levitation transport systems, and power facilities are also typical examples where the electronics are expected to be exposed to harsh temperatures and to operate under severe thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and, therefore, new parts must be developed or the conventional devices need to be modified. For example, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. At the other end, built-in radiators and coolers render the operation of electronics possible under hot conditions. These thermal measures lead to design complexity, affect development costs, and increase size and weight. Electronics capable of operation at extreme temperatures, thus, will not only tolerate the hostile operational environment, but also make the overall system efficient, more reliable, and less expensive. The Extreme Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electronics suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices, including COTS parts, for potential use under extreme temperatures. These components include semiconductor switching devices, passive devices, DC/DC converters, operational amplifiers, and oscillators. An overview of the program will be presented along with some experimental findings.

Patterson, Richard L.↗
NASA NTRS1979

Description of A 2.3 kW power transformer for space applications

The paper describes the principal features and special testing of a high-frequency high-power low-specific-weight (0.57 kg/kW) 2.3-kW electronic power transformer developed for space applications. The transformer is operated in a series resonant inverter supplying beam power to a 30-cm mercury ion thruster. High efficiency (above 98.5%) is obtained through careful detailed design. A number of unique heat removal techniques are discussed which control the winding temperature using only the available conductive cooling.

Hansen, I.↗
NASA NTRS2004

Development of a Bio-nanobattery for Distributed Power Storage Systems

Currently available power storage systems, such as those used to supply power to microelectronic devices, typically consist of a single centralized canister and a series of wires to supply electrical power to where it is needed in a circuit. As the size of electrical circuits and components become smaller, there exists a need for a distributed power system to reduce Joule heating, wiring, and to allow autonomous operation of the various functions performed by the circuit. Our research is being conducted to develop a bio-nanobattery using ferritins reconstituted with both an iron core (Fe-ferritin) and a cobalt core (Co-ferritin). Both Co-ferritin and Fe-ferritin were synthesized and characterized as candidates for the bio-nanobattery. The reducing capability was determined as well as the half-cell electrical potentials, indicating an electrical output of nearly 0.5 V for the battery cell. Ferritins having other metallic cores are also being investigated, in order to increase the overall electrical output. Two dimensional ferritin arrays were also produced on various substrates, demonstrating the necessary building blocks for the bio-nanobattery. The bio-nanobattery will play a key role in moving to a distributed power storage system for electronic applications.

King, Glen C.↗
NASA NTRS2023

The Impact of Soft Magnetic Materials in Electrified Aircraft Applications

Electrical systems with high power and high power density are integral to many aerospace and energy applications. These systems, enabled by power electronics with wide bandgap semiconductor devices, require management of both efficiency/thermal aspects and electromagnetic interference that are problems specific to high power and high frequency applications, respectively. In addition to advanced active components, these applications also require passive components (inductors, capacitors, conductors) capable of operation under challenging conditions. This work surveys the state of the art of magnetic components and soft magnetic materials used as inductive cores. The wide variety of motor and converter topologies translates to a variety of requirements in the magnetics including mechanical properties, permeabilities, and frequency response. The scaling impact of material properties will be surveyed with respect to component performance and sizing, using both data from experiment and the published literature. Variations on simulations, both in lumped circuits and finite element models, will also be discussed as these are important aspects of the design phase of modern power electronics.

Alex Leary↗
NASA NTRS2020

Body of Knowledge for Gallium Nitride Power Electronics

Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This report serves as a body of knowledge (BOK) in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The document also discusses GaN’s applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified. This BOK focuses mainly on power applications for GaN, but will also briefly mention radio frequency (RF) applications for completeness.

Gallium Nitride Power Electronics↗