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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Thin-film chemical sensors based on electron tunneling

The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

Khanna, S. K.↗
NASA NTRS1989

Improved Si:As BIBIB (Back-Illuminated Blocked-Impurity-Band) hybrid arrays

Results of a program to increase the short wavelength (less than 10 microns) detective quantum efficiency, eta/beta, of Si:As Impurity Band Conduction arrays are presented. The arrays are epitaxially grown Back-Illuminated Blocked (BIB) Impurity-Band (BIBIB) 10x50 detectors bonded to switched-FET multiplexers. It is shown that the 4.7 microns detective quantum efficiency increases proportionately with the thickness of the infrared active layer. A BIB array with a thick active layer, designed for low dark current, exhibits eta/beta = 7 to 9 percent at 4.7 microns for applied bias voltages between 3 and 5 V. The product of quantum efficiency and photoelectric gain, etaG, increases from 0.3 to 2.5 as the voltage increases from 3 to 5 V. Over this voltage range, the dark current increases from 8 to 120 e(-)s(-1) at a device temperature of 4.2 K and is under 70 e(-)s(-1) for all voltages at 2 K. Because of device gain, the effective dark current (equivalent photon rate) is less than 3 e(-)s(-1) under all operating conditions. The effective read noise (equivalent photon noise) is found to be less than 12 electrons under all operating conditions and for integration times between 0.05 and 100 seconds.

Herter, T.↗
NASA NTRS1992

Microwave properties of peeled HEMT devices sapphire substrates

The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.

Young, Paul G.↗
NASA NTRS2019

Developing a soil inversion model framework for regional permafrost monitoring

Currently, the community lacks capabilities to assess and monitor landscape scale permafrost active layer dynamics over large extents. To address this need, we developed a concept of a remote sensing based Soil Inversion Model for regional Permafrost (SIM-P) monitoring. The current SIM-P framework includes a satellite-based soil process model and a soil dielectric model. We are also working on incorporating a radar scattering model for Arctic tundra into the SIM-P framework. A unified soil parameterization scheme was developed to harmonize key soil thermal, hydraulic and dielectric parameters in the soil process and radar models that can be used in the joint soil-radar inversion framework. The soil parameter retrievals of the SIM-P framework include soil organic content (SOC) and active layer thickness (ALT). Initial tests of SIM-P using in-situ soil permittivity observations showed reasonable accuracy in predicting site-level SOC and soil temperature profiles at an Alaska tundra site and ALT in Arctic Alaska. SIM-P will be further tested using airborne P- and L-band radar data collected during NASA’s Arctic Boreal Vulnerability Experiment (ABoVE) to evaluate the sensitivity of longwave radar to active layer properties.

Miller, Charles E.↗
NASA NTRS1989

Long wavelength semiconductor lasers development for infrared heterodyne applications

PbSnTe single crystals were grown in a new 3 zone furnace. Molecular beam epitaxy (MBE) growth parameters have been established, including beam flux vs. temperature, and growth rates and dopant vs. PbTe flux ratios for the various effusion sources involved. Lattice matching studies were conducted and doping studies were completed. Broad area Pb(1-x)Sn(x)Te double heterostructure lasers were fabricated with active layer compositions up to x equals 0.04 at percent Sn in the active layers. Electrical and optical test data are presented.

Feit, Zeev↗
NASA NTRS2004

Retinal Light Processing Using Carbon Nanotubes

Method and system for processing light signals received by the eye of a human or other animal, where the eye may be compromised or non-functioning. Incident light is received at first and second pixels in a photodetector array and provides a pixel electrical signal representing the received light. Each of an array of carbon nanotube (CNT) towers is connected to a pixel, has a first tower end penetrating a retinal active layer of the animal and has a second tower end positioned to receive to receive and transport the pixel electrical signal to the retinal active layer. The CNT tower may be coated with a biologically active substance or chemically modified to promote neurite connections with the tower. The photoreceptor array can be provide with a signal altering mechanism that alters at least one of light intensity and wavelength intensity sensed by a first pixel relative to a second pixel, to correct for one or more selected eye problems.

David J Loftus↗
NASA NTRS1979

Theoretical performance of multi-layer grid patterns for solar cells

Multilayer grid patterns consist of fine closely spaced grid lines overlaid by coarser patterns of wider and thicker grid lines to collect the current from the finer grids with low series voltage drop and low active-layer sheet losses. An analytical approach leads to closed form solutions with simple relationships between the power losses in the active layer, in the grid and shadowing losses for optimum design proportions. The results show that multilayer grids, with line thickness equal to line width, greatly reduce losses in cell efficiency under concentration conditions of high current collection. (AlGa)As-pn GaAs cells of areas 1-25 sq cm and sheet resistance 40 ohms/square are considered. Also the performance of a n/p GaAs cell of dimensions 10 x 10 cm is studied. With optimized grid patterns high efficiencies are predicted for large area cells.

Flat, A.↗
NASA NTRS1983

GaInAs-AlInAs heterostructures for optical devices grown by MBE

The band gap of Ga(0.47)In(0.53)As corresponds to an emission wavelength of about 1.65 microns. Lasers have been produced with Al(0.48)In(0.52)As as cladding layers operating at room temperature. The peak emission of Ga(0.47)In(0.53)As can be continuously varied from 1.65 to 1.2 microns by the use of the multiquantum well structures. This range of wavelengths covers the minimum loss and dispersion in optical fibers and will be applicable to integrated optics. Double heterostructure broad area lasers have been fabricated using AlInAs as cladding layers to the GaInAs active layer. Room temperature threshold current densities of 4.3 kA/sq cm have been obtained for lasers with a 4500 A active region. The first data on GaInAs/AlInAs quantum well emitters will be presented. Photoluminescence of 4 K from quantum well layers of 100, 150, and 180 A with 150 A AlInAs barrier layers produced emission at 1.27, 1.35, and 1.41 microns, respectively. Ga(0.47)In(0.52)As quantum well LEDs have also been produced which emit at 1.34 microns.

Welch, D. F.↗
NASA NTRS1987

The variably spaced superlattice electroluminescent display - A new high efficiency electroluminescence scheme

A new, highly efficient dc electroluminescent display is presented. A variably spaced superlattice scheme is suggested herein which can produce high-energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias an order of magnitude less than the best dc electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer stack under bias and emerge into the active layer at an energy equal to the conduction-band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Brennan, K. F.↗
NASA NTRS1986

Theoretical and material studies on thin-film electroluminescent devices

A highly efficient DC electroluminescent display is presented. A variably spaced superlattice structure is used to produce high energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias on order of magnitude less than the best DC electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer ZnSe/CaSrF2 stack under bias and emerge into the active layer at an energy equal to the conduction band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Summers, C. J.↗
NASA NTRS1986

An investigation of the feasibility of active boundary layer thickening for aircraft drag reduction

The feasibility of using a forward mounted windmilling propeller to extract momentum from the flow around an axisymmetric body to reduce total drag has been studied. Numerical calculations indicate that a net drag reduction is possible when the energy extracted is returned to an aft mounted pusher propeller. However, net drag reduction requires very high device efficiencies. Results of an experimental program to study the coupling between a propeller wake and a turbulent boundary layer are also reported. The experiments showed that a complex coupling exists and simple modes for the flow field are not sufficiently accurate to predict total drag.

Ash, R. L.↗
NASA NTRS2015

Effects of Mesoscale Eddies in the Active Mixed Layer: Test of the Parametrisation in Eddy Resolving Simulations

In eddy resolving simulations, we test a mixed layer mesoscale parametrisation, developed recently by Canuto and Dubovikov [Ocean Model., 2011, 39, 200-207]. With no adjustable parameters, the parametrisation yields the horizontal and vertical mesoscale fluxes in terms of coarse-resolution fields and eddy kinetic energy (EKE). We compare terms of the parametrisation diagnosed from coarse-grained fields with the eddy mesoscale fluxes diagnosed directly from the high resolution model. An expression for the EKE in terms of mean fields has also been found to get a closed parametrisation in terms of the mean fields only. In 40 numerical experiments we simulated two types of flows: idealised flows driven by baroclinic instabilities only, and more realistic flows, driven by wind and surface fluxes as well as by inflow-outflow. The diagnosed quasi-instantaneous horizontal and vertical mesoscale buoyancy fluxes (averaged over 1-2 degrees and 10 days) demonstrate a strong scatter typical for turbulent flows, however, the fluxes are positively correlated with the parametrisation with higher (0.5-0.74) correlations at the experiments with larger baroclinic radius Rossby. After being averaged over 3-4 months, diffusivities diagnosed from the eddy resolving simulations are consistent with the parametrisation for a broad range of parameters. Diagnosed vertical mesoscale fluxes restratify mixed layer and are in a good agreement with the parametrisation unless vertical turbulent mixing in the upper layer becomes strong enough in comparison with mesoscale advection. In the latter case, numerical simulations demonstrate that the deviation of the fluxes from the parametrisation is controlled by dimensionless parameter estimating the ratio of vertical turbulent mixing term to mesoscale advection. An analysis using a modified omega-equation reveals that the effects of the vertical mixing of vorticity is responsible for the two-three fold amplification of vertical mesoscale flux. Possible physical mechanisms, responsible for the amplification of vertical mesoscale flux are discussed.

simulation↗
NASA NTRS1983

Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

Wang, Y. C.↗
NASA NTRS2016

Drilling Subsurface Ice at the Haughton Crater Analog Site

Over a decade of evolutionary development of integrated automated drilling and sample handling at the terrestrial polar Mars analog site at Haughton Crater has made it possible to propose missions that could sample 1-2m into rocks and ice on Mars. The eventual search for biomarkers and signs of past or extant life in Mars polar regions will require sample acquisition there below the desiccated and irradiated surface. Drilling and drill tests at the Haughton Crater site since 1998 have also shown a retreat downward of the active-layer boundary in annual measurements.

subsurface↗
NASA NTRS1989

Numerical investigation of the control of the secondary instability process in boundary layers

A numerical model has been developed for investigating boundary layer transition control for a flat plate boundary layer. Active control of a periodically forced boundary layer in an incompressible fluid is studied using surface heating techniques. The spatially evolving boundary layer is simulated. The Navier-Stokes and energy equations are integrated using a fully implicit finite difference/spectral method. Temperature perturbations are introduced locally along finite heater strips to directly attenuate the instability waves in the flow. A feedback control loop is employed in which a downstream sensor is used to monitor wall shear stress fluctuations. Active control of small amplitude two-dimensional and three-dimensional disturbances is numerically simulated. With proper phase control, in-phase reinforcement and out-of-phase attenuation are demonstrated. A receptivity study of the localized temperature perturbations is made. It is shown that narrow heater strips are more receptive in that they maximize the amplitude level of the disturbances in the flow. Active control of the early stages of the fundamental breakdown process is also numerically simulated. Control is achieved with either two-dimensional or three-dimensional control inputs.

Kral, L. D.↗
NASA NTRS1988

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

Source record↗
NASA NTRS1990

128 layer HYMOSS module fabrication issues

The fabrication of the first Z-technology module with 128 active layers of readout electronic circuitry is being pursued. Several issues which will be investigated regarding the 128-layer module build, such as photolithographic processing at the edge of the module (edge effects) and module buttability, are discussed in this paper. Other topics which are covered apply to future applications of fully populated HYMOSS modules. These topics include possible reductions of thermal mass for quick cool-down time applications and improvements of end-to-end yield for low-cost applications.

Ludwig, David E.↗