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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Deposition and characterization of ZnS/Si heterojunctions produced by vacuum evaporation

Isotype heterojunctions of ZnS (lattice constant 5.41 A) were grown on silicon (lattice constant 5.43 A) p-n junctions to form a minority-carrier mirror. The deposition process was vacuum evaporation from a ZnS powder source onto a heated (450 C) substrate. Both planar (100) and textured (111) surfaces were used. A reduction of the minority-carrier recombination at the surface was seen from increased short-wavelength quantum response and increased illuminated open-circuit voltage. The minority-carrier diffusion length was not degraded by the process.

Landis, Geoffrey A.↗
NASA NTRS1993

Electroluminescent Displays Made With Alternative Dopants

Metals and metal fluorides deposited in ZnS to form color phosphors. Single-layer, thin-film electroluminescent display device contains ZnS host layer doped to form green, red, and blue phosphors. Luminescence in chosen colors at chosen intersections between rows and columns produced by application of voltages to appropriate row-and-column pairs of conductors.

Robertson, James B.↗
NASA NTRS1995

Design of a Three-Layer Antireflection Coating for High Efficiency Indium Phosphide Solar Cells Using a Chemical Oxide as First Layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.

Moulot, Jacques↗
NASA NTRS1997

Optical Characterization and 2,525 micron Lasing of Cr(2+):Cd(0.85)Mn(0.15)Te

Transition metal doped solids are of significant current interest for the development of tunable solid-state lasers for the near and mid-infrared (1-4 pm) spectral region. Applications of these lasers include basic research in atomic, molecular, and solid-state physics, optical communication, medicine, and environmental studies of the atmosphere. In transition metal based laser materials, absorption and emission of light arises from electronic transitions between crystal field split energy levels of 3d transition metal ions. The optical spectra generally exhibit broad bands due to the strong interaction between dopant and host (electron-phonon coupling). Broad emission bands offer the prospect of tunable laser activity over a wide wavelength range, e.g. the tuning range of Ti:Sapphire extends from 700-1100 run. The only current transition metal laser operating in the mid-infrared wavelength region (1.8-2.4 micro-m) is CO(2+):MgF2, but its performance is severely limited due to strong nonradiative decay at room temperature. Based on lifetime data, the quantum efficiency is estimated to be less than 3 deg/0 11,21. In general, the probability for non-radiative decay via multi-phonon relaxation increases with decreasing energy gap between ground and excited state. Therefore, efficient transition metal lasers beyond -1.6 micro-m are rare. Recently, tunable laser activity around 2.3 micro-m was observed from Cr doped ZnS and ZnSe. The new lasing center in these materials was identified as Cr(2+) occupying the tetrahedral Zn site. Tetrahedrally coordinated optical centers are rather unusual among transition metal lasers. Their potential usefulness, however, has been demonstrated by the recent development of near infrared laser materials such as Cr:forsterite and Cr:YAG, which are based on tetrahedrally coordinated Cr(4+) ions. According to the Laporte selection rule, electric-dipole transition within the optically active 3d-electron shells are parity forbidden. However, a static acentric electric crystal field or the coupling of asymmetric phonons can force electric-dipole transitions by the admixture of wave functions with opposite parity. Tetrahedral sites lack inversion symmetry which provides the odd-parity field necessary to relax the parity selection rule. Therefore, high absorption and emission cross sections are observed. An enhanced radiative emission rate is also expected to reduce the detrimental effect of non-radiative decay. Motivated by the initial results on Cr doped ZnS and ZnSe, we have started a comprehensive effort to study Cr(2+) doped II-VI semiconductors for solid-state laser applications. In this paper we present the optical properties and the demonstration of mid-infrared lasing from Cr doped Cd(0.85)Mn(0.15)Te.

Davis, V. R.↗
NASA NTRS2002

Origin of the Large Bandgap Bowing in Highly Mismatched Semiconductor Alloys

We use a combination of optical and soft x-ray fluorescence techniques to investigate the composition dependence of the band edge energies in ZnSe(1-x)Te(x) and ZnS(1-x)Te(x) alloys. The results reveal entirely different origins of the large bandgap bowing for alloys with small and large Te content. On the Te-rich side, the reduction of the bandgap is well explained by the band anticrossing interaction between the Se or S localized states and the ZnTe conduction band states. On the Se or S-rich side, an interaction between the localized Te states and the degenerate GAMMA valence bands of ZnSe or ZnS is responsible for the bandgap reduction and the rapid increase of the spin-orbit splitting with increasing Te concentration. Results of soft x-ray fluorescence experiments provide direct evidence for the valence band anticrossing interaction. The bandgap bowing over the entire composition range is accounted for by a linear interpolation between the conduction band anticrossing and valence band anticrossing models.

Wu, J.↗
NASA NTRS2013

Constraints on the Neutron Star and Inner Accretion Flow in Serpens X-1 Using Nustar

We report on an observation of the neutron star low-mass X-ray binary Serpens X-1, made with NuSTAR. The extraordinary sensitivity afforded by NuSTAR facilitated the detection of a clear, robust, relativistic Fe K emission line from the inner disk. A relativistic profile is required over a single Gaussian line from any charge state of Fe at the 5 sigma level of confidence, and any two Gaussians of equal width at the same confidence. The Compton back-scattering "hump" peaking in the 10-20 keV band is detected for the first time in a neutron star X-ray binary. Fits with relativistically blurred disk reflection models suggest that the disk likely extends close to the innermost stable circular orbit (ISCO) or stellar surface. The best-fit blurred reflection models constrain the gravitational redshift from the stellar surface to be ZnS (is) greater than 0.16. The data are broadly compatible with the disk extending to the ISCO; in that case,ZnS(is) greater than 0.22 and RNS (is) less than12.6 km (assuming MnS = 1.4 solar mass and a = 0, where a = cJ/GM2). If the star is as large or larger than its ISCO, or if the effective reflecting disk leaks across the ISCO to the surface, the redshift constraints become measurements. We discuss our results in the context of efforts to measure fundamental properties of neutron stars, and models for accretion onto compact objects.

accretion↗
NASA NTRS2017

Validation Testing of a Peridynamic Impact Damage Model Using NASA's Micro-Particle Gun

Through a collaborative effort between the Virginia Commonwealth University and Raytheon, a peridynamic model for sand impact damage has been developed1-3. Model development has focused on simulating impacts of sand particles on ZnS traveling at velocities consistent with aircraft take-off and landing speeds. The model reproduces common features of impact damage including pit and radial cracks, and, under some conditions, lateral cracks. This study focuses on a preliminary validation exercise in which simulation results from the peridynamic model are compared to a limited experimental data set generated by NASA's recently developed micro-particle gun (MPG). The MPG facility measures the dimensions and incoming and rebound velocities of the impact particles. It also links each particle to a specific impact site and its associated damage. In this validation exercise parameters of the peridynamic model are adjusted to fit the experimentally observed pit diameter, average length of radial cracks and rebound velocities for 4 impacts of 300 μm glass beads on ZnS. Results indicate that a reasonable fit of these impact characteristics can be obtained by suitable adjustment of the peridynamic input parameters, demonstrating that the MPG can be used effectively as a validation tool for impact modeling and that the peridynamic sand impact model described herein possesses not only a qualitative but also a quantitative ability to simulate sand impact events.

Baber, Forrest E.↗
NASA NTRS1974

Drift in interference filters. I

Studies of narrow-band interference filters have shown that two mechanisms exist that cause drift to shorter wavelengths. One is dependent on the thermal history of the filter, and the other depends on the radiation history. The present paper presents experimental results on thermal effects; and it is shown that by a proper bake cycle, ZnS-cryolite filters are stable for years if stored at less than 38 C.

Title, A. M.↗
NASA NTRS1975

Direct solar energy conversion for large scale terrestrial use

Various techniques to increase the open circuit voltage are being explored. It had been previously observed that cells made on CdS deposited from a single source gave a consistently higher V sub oc. Further tests have now shown that this effect may in fact relate to differences in source and substrate temperatures. The resulting differences in CdS structure and crystallinity are being documented. Deposits of mixed CdS and ZnS are being produced and will be initially made into cells using the conventional barriering technique. Analysis of I-V characteristics at temperatures between 25 and 110 C is being perfected to provide nondestructive analysis of the Cu2S. Changes due to vacuum heat treatments and exposure to oxygen are also being monitored by the same technique. Detailed spectral response measurements are being made.

Boeer, K. W.↗
NASA NTRS1979

Phase transitions in Group III-V and II-VI semiconductors at high pressure

The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

Yu, S. C.↗
NASA NTRS1979

A split sphere 60,000 ton press

A split sphere press which can have a total force of 60,000 tons applied to its exterior by a 0.55 GPa hydrostatic pressure vessel is described. The inner anvils are made of tungsten carbide and show considerable plastic deformation under load. Much greater pressures, in the 100 GPa range, are possible if diamond tipped anvils are used. Because of the uniformly loaded multi-anvil arrangement, the diamond tips can be maintained under a high degree of compressive load and therefore prevent fracture which may occur in a conventional opposed anvil arrangement. Press operation on CdS, ZnSe, ZnS, GaP, and BP samples is described, and their resistance versus external pressure on the sphere are plotted.

Wanagel, J.↗
NASA NTRS1979

Scanning Auger Microprobe and atomic absorption studies of lunar volcanic volatiles

Results on lunar volatile transport processes have been obtained by studying green and brown glass droplets, orange and black core tube samples and the surface sample 74241 with the Scanning Auger Microprobe (SAM) and by Flameless Atomic Absorption Analysis (FLAA). SAM analyses show that the most dominant volatiles in the top few atomic layers of droplets are Zn and S, confirming that the surface Zn and S are good indicators of pyroclastic origin, and they are not entirely present as ZnS. In addition, FLAA thermal release profiles show that almost all the Zn and Cd are on grain surfaces, indicating that Zn and Cd were completely outgassed from lava fountain products during the volcanic eruption, were recondensed during or after the eruptions, and are thus present as surface coating.

Cirlin, E. H.↗
NASA NTRS1981

Far infrared filters for the Galileo-Jupiter and other missions

Progress in the development of FIR multilayer interference filters for the net flux radiometer and photopolarizing radiometer to be carried on board the Galileo mission to Jupiter is reported. The multilayer interference technique has been extended to the region above 40 microns by the use of PbTe/II-VI materials in hard-coated combination, with the thickest layers composed of CdSe QWOT at 74 microns and PbTe QWOT. Improvements have also been obtained in filters below 20 microns on the basis of the Chebyshev stack design. A composite filter cutting on steeply at 40 microns has been designed which employs a thin crystal quartz substrate, shorter wavelength absorption in ZnS and As2S3 thin films, and supplementary multilayer interference. Finally, absorptive filters have been developed based on II-VI compounds in multilayer combination with KRS-5 (or 6) on a KRS-5 (or 6) substrate

Seeley, J. S.↗
NASA NTRS1985

Diamondlike carbon protective coatings for IR materials

Diamondlike carbon (DLC) films have the potential to protect optical windows in applications where it is important to maintain the integrity of the specular transmittance of these films on ZnS and ZnSe infrared transmitting windows. The films must be adherent and durable such that they protect the windows from rain and particle erosion as well as chemical attack. In order to optimize the performance of these films, 0.1 micro m thick diamondlike carbon films were deposited on fused silica and silicon wafers, using three different methods of ion beam deposition. One method was sputter deposition from a carbon target using an 8 cm ion source. The merits of hydrogen addition were experimentally evaluated in conjunction with this method. The second method used a 30 cm hollow cathode ion source with hydrocarbon/Argon gases to deposit diamondlike carbon films from the primary beam at 90 to 250 eV. The third method used a dual beam system employing a hydrocarbon/Argon 30 cm ion source and an 8 cm ion source. Films were evaluated for adherence, intrinsic stress, infrared transmittance between 2.5 and 50 micro m, and protection from particle erosion. An erosion test using a sandblaster was used to give quantitative values of the protection afforded to the fused silica by the diamondlike carbon films. The fused silica surfaces protected by diamondlike carbon films were exposed to 100 micro m diameter SiO particles at 60 mi/hr (26.8/sec) in the sandblaster.

Mirtich, M. J.↗
NASA NTRS1986

Development of high-efficiency solar cells on silicon web

Achievement of higher efficiency cells by directing efforts toward identifying carrier loss mechanisms; design of cell structures; and development of processing techniques are described. Use of techniques such as deep-level transient spectroscopy (DLTS), laser-beam-induced current (LBIC), and transmission electron microscopy (TEM) indicated that dislocations in web material rather than twin planes were primarily responsible for limiting diffusion lengths in the web. Lifetimes and cell efficiencies can be improved from 19 to 120 microns, and 8 to 10.3% (no AR), respectively, by implanting hydrogen at 1500 eV and a beam current density of 2.0 mA/sq cm. Some of the processing improvements included use of a double-layer AR coating (ZnS and MgF2) and an addition of an aluminum back surface reflectors. Cells of more than 16% efficiency were achieved.

Meier, D. L.↗
NASA NTRS1986

High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

Daud, Taher↗