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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from ~680 mV to ~960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

Ringel, S. A.↗
NASA NTRS2005

Synthesis and Optimization of Thermoelectric Properties of Zn(x)Sb3

High-performance thermoelectric materials are studied to investigate their abilities to optimize electrical and minimize thermal conductivities. A stoichiometric range of p-type zinc antimonide compounds was synthesized to analyze the trends in their thermoelectric properties. Zn(x)Sb3 (x=3.80, 3.85, 3.90, 3.95, 4.00, 4.05, 4.10) was reacted at 750 C and annealed at 300 C for 24 hours at each temperature. Electronic transport properties such as Seebeck and Hall Effect were measured to analyze possible trends in the set of compositions. SEM, EDS, and XRD were used to quantify both ingots and hot-pressed samples to confirm that they were single-phase and of the expected stoichiometries. Recent SEM data indicated that Zn(3.90)Sb3 and Zn(4.00)Sb3 samples were actually Zn3Sb2. In hopes of further improving the figure-of-merit (ZT) of the binary system, V, Cr, Mn, Fe, Co, In, and Sn were used to dope (Zn(0.95)M(0.05))(3.95)Sb3.

Doan-Nguyen, Vicky V.↗
NASA NTRSDate not supplied

Al-Cu-Zn-Mg Alloy for Additive Manufacturing by Electron Beam Deposition

The application of fusion-based additive manufacturing (AM) to aircraft structural components is limited by the lack of high-strength aluminum alloys optimized for AM processing. High strength aluminum alloys (such as 7050-T7451) are difficult to process by AM because of their solidification cracking susceptibility and loss of volatile alloying elements such as Zn and Mg. The performance of a proprietary Al-Cu-Zn-Mg alloy wire feedstock was evaluated for AM utilizing electron beam deposition. Deposit microstructure, composition, occurrence of porosity and cracking, and post-heat treatment tensile and fracture toughness were correlated with deposition parameters. Post-heat treatment strength, ductility, and fracture toughness were lower than typical values for wrought 7050-T7451, related to significant losses of Zn and Mg and to porosity. Recommendations are offered for modifications to wire feedstock composition and adjustments to deposition conditions and heat treatment to enable AM of electron beam deposited material that has strength comparable to 7050-T7451 wrought products.

Al-Cu-Zn-Mg alloy, electron beam deposition, mecha↗
NASA NTRS1993

Specific heats and thermodynamic critical fields in Zn-doped YBa2Cu3O(7-x) according to an induced-pairing model

Electronic specific heats and thermodynamic critical fields are calculated in a mean-field version of an induced-pairing model for superconductivity, and compared with results of Loram et al. (1990) on YBa2(Cu(1-y)Zn(y))3O(7-x). This model involves induction of pairing of holes in a wideband by strongly bound electronlike pairs. It is assumed that the planar hole concentration for no Zn addition is close to, but slightly higher than, that for the maximum Tc, and that it increases by 0.015 per planar Cu ion for each increase of y by 0.01. Parameters of the model are taken to be the same as in a previous publication in which energy gaps were discussed, except that an effective hybridization parameter is adjusted for each Zn concentration to give agreement with the observed Tc. Results are presented for y = 0.0, 0.01, and 0.03. The agreement with experiment is good for thermodynamic critical fields, and is fair for specific heats. For specimens with larger y, with relatively low T(c)s, it is argued that the model should be supplemented to include effects of a BCS-type interaction amongst the wideband carriers.

Eagles, D. M.↗
NASA NTRS1998

Microstructural Development of Directionally Solidified Hg(1-x)Zn(x)Se Alloys

Hg(1-x)Zn(x)Se alloys have been studied as an alternative to HgCdTe for the detection of electromagnetic radiation, because the shorter ZnSe and HgSe bonds were predicted to improve lattice stability. Previous studies showed that optical properties were stable with time and that the microhardness was higher than for HgTe based alloys. However, for this material to be commercially viable, compositional variations must be reduced, and the distribution of defects induced by the growth process must be understood. The basic structural properties of bulk materials were characterized, and dislocation etch pit densities were measured to determine whether the addition of Zn to the HgSe lattice reduced the potential for dislocation formation. Hg(0.9)Zn(0.1)Se alloys were directionally solidified using a modified Bridgman-Stockbarger method and in an applied magnetic field. Radial compositional variations were greatly reduced when solidification occurred in an applied magnetic field. The combination of a convex liquid-solid interface shape and a method for reduced wetting produced boules that were a single crystal after reaching full diameter. Observed surface features indicated ampoule wetting could be eliminated using a graphite getter. Microstructural characteristics were greatly improved over HgCdTe alloys, In six boules, a total of only one twin was observed, and no inclusions were found. A method for polishing and producing dislocation etch pits was developed for these alloys, revealing dislocation etch pit densities one to two orders of magnitude less than HgTe based alloys. A kink in the thermal profile during processing of one boule generated more dislocations than did lattice mismatch due to compositional variations. The results of this investigation indicate this alloy has improved microstructural properties and resistance to dislocation formation compared with similar II-VI alloys, and should be further investigated for the detection of electromagnetic radiation.

Cobb, S. D.↗
NASA NTRS2009

Initial Transient in Zn-doped InSb Grown in Microgravity

Three Zn-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS) Alpha. The distribution of the Zn was measured using SIMS. A short diffusion-controlled transient, typical for systems with k greater than 1 was demonstrated. Static pressure of approximately 4000 N/m2 was imposed on the melt, to prevent bubble formation and dewetting. Still, partial de-wetting has occurred in one experiment, and apparently has disturbed the diffusive transport of Zn in the melt.

Ostrogorsky, A G.↗
NASA NTRS2009

Dewetting and Segregation of Zn-Doped InSb in Microgravity Experiments

In directional solidification, dewetting is characterized by the lack of contact between the crystal and the crucible walls, due to the existence of a liquid meniscus at the level of the solid-liquid interface. This creates a gap of a few tens of micrometers between the crystal and the crucible. One of the immediate consequences of this phenomenon is the dramatic improvement of the quality of the crystal. This improvement is partly due to the modification of the solid-liquid interface curvature and partly to the absence of sticking and spurious nucleation at the crystal-crucible interface. Dewetting has been, commonly observed during the growth of semiconductors in crucibles under microgravity conditions where it appears to be very stable: the gap between the crystal and the crucible remains constant along several centimetres of growth. The physical models of the phenomenon are well established and they predict that dewetting should not occur in microgravity, if sufficient static pressure is imposed on the melt, pushing it towards the crucible. We present the results of InSb(Zn) solidification experiments conducted at the International Space Station (ISS) where, in spite of a spring exerting a pressure on the liquid, partial dewetting did occur. This surprising result is discussed in terms of force exerted .by the spring on the liquid and of possibility that the spring did not work properly. Furthermore, it appears that the segregation of the Zn was not affected by the occurrence of the dewetting. The data suggest that there was no significant interference of convection with segregation of Zn in InSb.

Ostrogorsky, A. G.↗
NASA NTRS2024

Evaluation of an Al-Cu-Zn-Mg Alloy for Wire-Fed Additive Manufacturing

A collaborative research study was conducted to evaluate an experimental Al-Cu-Zn-Mg alloy, designated Al C380H, developed by Arconic Corporation for wire-fed additive manufacturing (AM) techniques such as NASA’s electron beam freeform fabrication (EBF 3 ) process and the wire arc additive manufacturing (WAAM) process. The goal of the study was to determine, based upon metallurgical properties, whether additively manufactured Al C380H represented a viable alternative for applications currently using wrought 7xxx series aluminum. Al 2319 and Al 7075 were also deposited as AM-compatible and non-AM-compatible baselines, respectively. Evaluation was based on tensile, fracture, and corrosion properties. The strength and ductility of Al C380H-T6 materials produced by EBF3 and WAAM were sufficiently lower than typical values for Al 7050-T7 to indicate that additively manufactured Al C380H is not a viable replacement for current parts fabricated with Al 7050, due largely to the significant losses in Zn and Mg and development of porosity during deposition. EBF 3 parameters that reduced porosity, such as increasing electron beam current, higher raster frequency, sharper beam focus, and slower travel speed, augmented de-alloying of fugitive solute. Further enhancement of Zn and Mg content in Al C380H feedstock wire combined with adjustments to deposition conditions to minimize porosity may enable production of Al C380H parts by EBF 3 or WAAM that are viable replacements for current Al 7050 wrought products.

electron beam freeform fabrication (EBF3)↗
NASA NTRS1973

Geochemistry of primordial Pb, Bi, and Zn in Apollo 15 samples

Primordial Pb as Pb-204 is present in Apollo 15 samples in concentrations ranging from less than 0.2 ppb in basalts to 6 ppb in soils. An acid soluble, pH-5-6, readily volatile component of this Pb is present, possibly as PbBr2; the remainder is correlated with the metal content of the sample. Leachable Bi and Pb-204 are correlated; residual Bi is probably present in a phosphate, possibly apatite. Zn is also highly leachable; residual Zn and Pb-204 are correlated.

Allen, R. O., Jr.↗
NASA NTRS1974

Photoluminescence of Zn-implanted GaN

The photoluminescence spectrum of Zn-implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range from 1 x 10 to the 18th to 20 x 10 to the 18th Zn/cu cm.

Pankove, J. I.↗
NASA NTRS1977

Zn diffusion in Al/0.7/Ga/0.3/As compared with that in GaAs

Zinc was diffused into 4 times 10 to the 17th per cu cm n-type Al(0.7)Ga(0.3)As grown by liquid-phase epitaxy and also into n-type 2 times 10 to the 17th per cu cm doped GaAs slices at 600, 650, and 750 C. The Zn diffusion coefficient in the Al(0.7)Ga(0.3)As was about one order of magnitude larger than in GaAs. The significance of this fact is that diffusion of Zn through a 0.5 micron Al(0.7)Ga(0.3)As layer appears to be possible with adequate control of the junction depth in the underlying GaAs.

Flat, A.↗
NASA NTRS1986

Differential electron scattering cross sections for the first optically forbidden and resonance transitions in Mg II, Zn II and Cd II

Differential electron scattering cross sections have been measured for dipole-forbidden and resonance transitions in Mg II, Zn II and Cd II in the angular range theta = 4-17 deg at 50 eV. These provide the first recorded angular distributions for an optically forbidden transition. It is found that while the cross section for excitation of the 4s (2)S-3d(9)4s(2) (2)D transition in Zn II is small, those for the 3s (2)S-3d (2)D, 4s (2)S (unresolved lines) in Mg II, and the 5s (2)S-4d(9)5s(2) D in Cd II are comparable in magnitude with the cross sections for resonance excitation. In addition, for Cd II it is found that the allowed and forbidden transitions have very similar angular distributions, and it is proposed that excitation to the 2D state may be dominated by a virtual 'double-dipole' transition via the 2P state. Also, the total excitation cross section of the resonance 2P state in Cd II is a factor of four higher than that predicted by the Gaunt factor approximation, suggesting that the accepted value for the oscillator strength may be too low.

Williams, I. D.↗
NASA NTRS1988

Effects of crucible wetting during solidification of immiscible Pb-Zn

Many industrial uses for liquid phase miscibility gap alloys are proposed. However, the commercial production of these alloys into useful ingots with a reasonable amount of homogeneity is arduous because of their immiscibility in the liquid state. In the low-g environment of space gravitational settling forces are abated, thus solidification of an immiscible alloys with a uniform distribution of phases becomes feasible. Elimination of gravitational settling and coalescence processes in low-g also makes possible the study of other separation and coarsening mechanisms. Even with gravitational separation forces reduced, many low-g experiments have resulted in severely segregated structures. The segregation in many cases was due to preferential wetting of the crucible by one of the immiscible liquids. The objective was to analyze the wetting behavior of Pb-Zn alloys on various crucible materials in an effort to identify a crucible in which the fluid flow induced by preferential wetting is minimized. It is proposed that by choosing the crucible for a particular alloy so that the difference in surface energy between the solid and two liqud phases is minimized, the effects of preferential wetting can be diminished and possibly avoided. Qualitative experiments were conducted and have shown the competitive wetting behavior of the immiscible Pb-Zn system and 13 different crucible materials.

Degroh, Henry C., III↗
NASA NTRS1989

Effects of crucible wetting during solidification of immiscible Pb-Zn alloys

Many industrial uses for liquid phase miscibility gap alloys are proposed. However, the commercial production of these alloys into useful ingots with a reasonable amount of homogeneity is arduous because of their immiscibility in the liquid state. In the low-g environment of space gravitational settling forces are abated, thus solidification of an immiscible alloy with a uniform distribution of phases becomes feasible. Elimination of gravitational settling and coalescence processes in low-g also makes possible the study of other separation and coarsening mechanisms. Even with gravitational separation forces reduced, many low-g experiments have resulted in severely segregated structures. The segregation in many cases was due to preferential wetting of the crucible by one of the immiscible liquids. The objective was to analyze the wetting behavior of Pb-Zn alloys on various crucible materials in an effort to identify a crucible in which the fluid flow induced by preferential wetting is minimized. It is proposed that by choosing the crucible for a particular alloy so that the difference in surface energy between the solid and two liquid phases is minimized, the effects of preferential wetting can be diminished and possibly avoided. Qualitative experiments were conducted and have shown the competitive wetting behavior of the immiscible Pb-Zn system and 13 different crucible materials.

De Groh, H. C., III↗
NASA NTRS1989

Purification, growth, and characterization of Zn(x)Cd(1-x)Se crystals

The purification of starting materials which were used in the growth of Zn(x)Cd(1-x)Se (x = 0.2) single crystals using the traveling solution method (TSM) is reported. Up to 13 cm long single crystals and as grown resistivities of 6 x 10(exp 12) ohm/cm could be achieved. Infrared and Raman spectra of Zn(0.2)Cd(0.8)Se are also presented and discussed.

Silberman, E.↗
NASA NTRS1993

Radiative lifetimes, branching rations, and absolute transition probabilities in Cr II and Zn II

New absolute atomic transition probability measurements are reported for 12 transitions in Cr II and two transitions in Zn II. These transition probabilities are determined by combining branching ratios measured by classical techniques and radiative lifetimes measured by time-resolved laser-induced fluorescence. The measurements are compared with branching fractions, radiative lifetimes, and transition probabilities in the literature. The 206 nm resonance multiplets in Cr II and Zn II are included in this work. These multiplets are very useful in determining the distribution of the elements in the gas versus grain phases in the interstellar medium.

Bergeson, S. D.↗
NASA NTRS1993

Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

Burshtein, Z.↗
NASA NTRS1993

Excitation cross sections for the ns 2S yields np 2P resonance transitions in Mg(+) (n = 3) and Zn(+) (n = 4) using electron-energy-loss and merged-beams methods

Electron-excitation cross sections are reported for the 3s 2S yields 3p 2P(h, k) resonance transition in Mg(+) at energies from threshold (4.43 eV) to approximately 9 times threshold (40.0 eV). The electron-energy-loss merged-beams technique used in these measurements is described in detail. In addition, the method of separating contributions of the elastically scattered (Coulomb) and the inelastically scattered electrons in the present Mg(+) case and previously reported Zn(+) results is described. Comparisons in the experimental energy range are made for Mg(+) with the two five-state close-coupling theoretical calculations carried out herein, and with other published close-coupling, distorted-wave, and semiempirical calculations. The present Mg(+) cross sections and Zn(+) cross sections from earlier measurements are tabulated.

Smith, Steven J.↗