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Results for “XeF2”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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23 records · Page 2

All sources NASA NTRS DOE OSTI

NASA NTRS1984

XPS study of the Al/SiO2 interface viewed from the SiO2 side

The first nondestructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films is presented. Both X-ray photoelectron spectroscopy (XPS) and electrical measurements of unannealed resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Postmetallization annealing (PMA) at 450 C induces reduction of the SiO2 by the aluminum, resulting in the layer ordering SiO2/Al2O3/Si/Al. The XPS measurement is performed from the SiO2 side after removal of the Si substrate after etching with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal-insulator and other interfaces.

Hecht, M. H.↗

NASA NTRS1985

A novel X-ray photoelectron spectroscopy study of the Al/SiO2 interface

The nondestructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films is reported. Both X-ray phototelectron spectroscopy (XPS) and electrical measurements of unannealed, resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Post metallization annealing at 450 C induces reduction of the SiO2 by the aluminum, at a rate consistent with the bulk reaction rate. The XPS measurement is performed from the SiO2 side after the removal of the Si substrate with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal-insulator and related interfaces.

Hecht, M. H.↗

NASA NTRS2017

Improved Mirror Coatings for Use in the Lyman Ultraviolet to Enhance Astronomical Instrument Capabilities

This paper will describe efforts at developing broadband mirror coatings with high performance that will extend from infrared wavelengths down to the Far-Ultraviolet (FUV) spectral region. These mirror coatings would be realized by passivating the surface of freshly made aluminum coatings with XeF2 gas in order to form a thin AlF3 overcoat that will protect the aluminum from oxidation and, hence, realize the high-reflectance of this material down to its intrinsic cut-off wavelength of 90 nm. Improved reflective coatings for optics, particularly in the FUV region (90-120 nm), could yield dramatically more sensitive instruments and permit more instrument design freedom.

reflectance↗

NASA NTRS2017

Improved Lyman Ultraviolet Astronomy Capabilities through Enhanced Coatings

This paper will describe efforts at developing broadband mirror coatings with high performance that will extend from infrared wavelengths down to the Far-Ultraviolet (FUV) spectral region. These mirror coatings would be realized by passivating the surface of freshly made aluminum coatings with XeF2 gas in order to form a thin AlF$_3$ overcoat that will protect the aluminum from oxidation and, hence, realize the high-reflectance of this material down to its intrinsic cut-off wavelength of 90 nm. Improved reflective coatings for optics, particularly in the FUV region (90-120 nm), could yield dramatically more sensitive instruments and permit more instrument design freedom.

Lyman-Ultraviolet↗

DOE OSTI2025

Nanoscale Editing of Multi and Single Layer Tungsten Disulfide via Gas‐Assisted Focused Electron Beam Induced Etching for Device Prototyping

Focused electron beam induced etching (FEBIE) with XeF 2 (xenon difluoride) precursor is conducted on multi-layer exfoliated WS 2 (tungsten disulfide) and monolayer WS 2 grown by chemical vapor deposition (CVD). The films are characterized by atomic force microscopy (AFM) and Raman and photoluminescence (PL) spectroscopy post-etching. The etch rates/efficiencies are reported as a function of electron beam energy, current, dwell time, and XeF 2 pressure. Bulk film Raman spectra are unchanged post-FEBIE, indicating minimal subsurface damage. Monolayer WS 2 shows a decrease in Raman and PL intensity post-FEBIE, with a dose-to-clear of ≈2 nC µm −2 . The study reveals regimes affected by the various mass transport contributions such as refresh time and the ratio of electrons/XeF 2 . Spontaneous etching was discovered during FEBIE of large patterned areas due to the long frame/refresh times. Density functional theory and ab initio molecular dynamics simulations compares desorption of SF x and WF x molecules from pristine WS 2 basal planes and pore edges, revealing the spontaneous etching is consistent with etching of partially etched monolayers during each frame. Single-line etching width of 21 nm, and patterning flakes into 100 nm wide channels are demonstrated. In conclusion, this work demonstrates the possibility of editing WS 2 flakes into electronic devices of arbitrary dimensions for semiconductor applications.

2D materials↗