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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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24 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

High-Power AlGaAs Quantum-Well Lasers On Si Substrates

AlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.

Kim, Jae-Hoon↗
NASA NTRS1992

Infrared Multiple-Quantum-Well Phototransistor

Proposed npn AlxGa1-xAs phototransistor incorporates multiple-quantum-well (MQW) infrared photodetector. Has n-doped contacts and is embedded between p-doped base region and n-doped collector region of transistor. Photocurrent amplified, and dark current suppressed.

Borenstain, Shmuel I.↗
NASA NTRS1992

Far-Infrared Imaging Radiometer

Inexpensive far-infrared imaging radiometer contains 128 X 128-picture-element array of AlxGa1-xAs quantum-well detectors. Potentially useful in remote sensing from airborne platforms. Industrial applications include rapid thermal imaging of heat-sensitive components. Astronomical applications include imaging of planets and Sun.

Forrest, Kathrine↗
NASA NTRS2003

Evidence for Coordination and Redox Changes of Iron in Shocked Feldspar from Synchrotron MicroXANES

Shock modification of feldspar has been documented and experimentally reproduced in many studies since the recognition of maskelynite in Shergotty. Experimentally shocked feldspar samples have been well studied using chemical and crystallographic techniques. The crystallographic, site-specific characterization of major and minor elements is less well documented. We present early x-ray absorption (XAS) spectral data for a suite of albitite samples that were experimentally shocked at pressures between 17 and 50 Gpa.

Delaney, J. S.↗
NASA NTRS1994

Very Long-Wavelength GaAs/AlxGa1-xAs Infrared Hot Electron Transistor

We have demonstrated a bound to continuum state GaAs/AlxGa1-xAs infrared hot electron transistor which has a peak response at (sub =16.3). This device utilizes a bound-to-continuum quantum well infrared photodetector as a photosensitive emitter and a wide AlxGa1-xAs barrier between the base and the collector as an energy discriminating filter.

infrared hot electron transistor photosensitive em↗