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All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Defining Well Clear Separation for Unmanned Aircraft Systems Operating with Noncooperative Aircraft

Detect-and-Avoid (DAA) systems are essential to the safe operations of Unmanned Aircraft Systems, and have the objectives of mitigating collisions with and remaining Well Clear of manned aircraft. This paper analyzes four candidate DAA Well Clear definitions for non-cooperative aircraft using mitigated performance metrics of DAA systems. These DAA Well Clear definitions were proposed in previous work based on their unmitigated collision risk and maneuver initiation range. In this work they are evaluated using safety and operational suitability metrics computed from a large number of representative encounters. Results suggest that although the four candidate DAA Well Clear definitions provide comparable safety, the alerting characteristics give preference for the DAA Well Clear definition without a temporal parameter.

Well Clear↗
NASA NTRS1988

Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition

The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/sq cm, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width. When corrected for lateral diffusion effects and the measured minority carrier lifetime, the saturation data suggest that saturation intensities as low as 2.3 W/sq cm can be achieved in this system. The first measurements of the dependence of the exciton area and the magnitude of the excitonic absorption on well width are prsented. The growth of MQW structures on transparent GaP substrates is demonstrated and the electroabsorption properties of these structures are reviewed.

Lee, Hsing-Chung↗
NASA NTRS1989

Advantages of an indirect semiconductor quantum well system for infrared detection

The infrared intersubband absorption process in quantum well systems with anisotropic bulk effective masses, which usually occurs in indirect semiconductors was analyzed. It is found that the anisotropic effective mass can be utilized to provide allowed intersubband transitions at normal incidence to the quantum well growth direction. This transition is known to be forbidden for cases of isotropic effective mass. This property can be exploited for infrared sensor application of quantum well structures by allowing direct illumination of large surface areas without using special waveguide structures. The 10-micron intersubband absorption in quantum wells made of the silicon-based system Si/Si(1-x)Ge(x) was calculated. It is found that it is readily possible to achieve an absorption constant of the order of 10,000/cm in these Si quantum wells with current doping technology.

Yang, Chan-Lon↗
NASA NTRS1990

Photovoltaic driven multiple quantum well optical modulator

Multiple quantum well (MQW) structures (12) are utilized to provide real-time, reliable, high-performance, optically-addressed spatial-light modulators (SLM) (10). The optically-addressed SLM comprises a vertical stack of quantum well layers (12a) within the penetration depth of an optical write signal 18, a plurality of space charge barriers (12b) having predetermined tunneling times by control of doping and thickness. The material comprising the quantum well layers has a lower bandgap than that of the space charge barrier layers. The write signal modulates a read signal (20). The modulation sensitivity of the device is high and no external voltage source is required. In a preferred embodiment, the SLM having interleaved doped semiconductor layers for driving the MQW photovoltaically is characterized by the use of a shift analogous to the Moss-Burnstein shift caused by the filling of two-dimensional states in the multiple quantum wells, thus allowing high modulation sensitivity in very narrow wells. Arrays (30) may be formed with a plurality of the modulators.

Maserjian, Joseph↗
NASA NTRS2014

A Family of Well-Clear Boundary Models for the Integration of UAS in the NAS

The FAA-sponsored Sense and Avoid Workshop for Unmanned Aircraft Systems (UAS) defines the concept of sense and avoid for remote pilots as "the capability of a UAS to remain well clear from and avoid collisions with other airborne traffic." Hence, a rigorous definition of well clear is fundamental to any separation assurance concept for the integration of UAS into civil airspace. This paper presents a family of well-clear boundary models based on the TCAS II Resolution Advisory logic. For these models, algorithms that predict well-clear violations along aircraft current trajectories are provided. These algorithms are analogous to conflict detection algorithms but instead of predicting loss of separation, they predict whether well-clear violations will occur during a given lookahead time interval. Analytical techniques are used to study the properties and relationships satisfied by the models.

Munoz, Cesar A.↗
NASA NTRS2016

Well Abandonment at Various Sites, John F. Kennedy Space Center, Florida

Between January 29 and March 9, 2016, a total of 23 monitoring wells were properly abandoned-in-place at five KSC sites (OPF-1&2, OPF-3, RDG, SRB, and HSB). The total abandonment encompassed 489.06 linear feet. The wells abandoned were constructed of PVC with diameters ranging from 1-inch to 2-inches. The shallowest well abandoned was measured to be 11.6 ft bls (OPF) and the deepest well abandoned was documented to be 51.45 feet bls (HSB). All aboveground completions were removed and each area was re-graded and/or grouted to surface to match existing surroundings. All materials (concrete pads, well casings, etc.) were disposed of accordingly.

MW↗
NASA NTRS2018

Simulated Water Well Performance on Mars

Final document is attached. This paper describes improvements in our understanding of the nature and location of massive ice sheets on the surface of Mars as well as refinements made to a technical approach for extracting significant quantities of water from these ice sheets using a technique known as a Rodriguez Well. Recently published discoveries on Mars have reinforced the evidence for the existence and structure of these massive buried ice sheets. Using this improved understanding of the feedstock material, this paper describes estimates made regarding basic characteristics – mass, power, configuration, etc. – of a system that can access and extract water from these ice sheets. This paper then summarizes the basic operation of a Rodriguez Well and describes a computer simulation used to estimate the performance characteristics of this type of well. This simulation was built and used to predict the performance of similar wells operated in the Earth's Arctic and Antarctic regions. However, physical parameters (e.g., specific heat and gas constant for air, heat transfer between water and air and between ice and air, etc.) used in the simulation represent a terrestrial environment and must be adjusted for a Martian environment. A pair of experiments designed to determine the appropriate value for these parameters under Martian conditions are described. Until results from these experiments are available, published results from other sources are used in the simulation to gain an understanding of the effect that could be seen. These provisional results are discussed.

Hoffman, Stephen↗
NASA NTRS2018

Simulated Water Well Performance on Mars

This paper describes improvements in our understanding of the nature and location of massive ice sheets on the surface of Mars as well as refinements made to a technical approach for extracting significant quantities of water from these ice sheets using a technique known as a Rodriguez Well. Recently published discoveries on Mars have reinforced the evidence for the existence and structure of these massive buried ice sheets. Using this improved understanding of the feedstock material, this paper describes estimates made regarding basic characteristics - mass, power, configuration, etc. - of a system that can access and extract water from these ice sheets. This paper then summarizes the basic operation of a Rodriguez Well and describes a computer simulation used to estimate the performance characteristics of this type of well. This simulation was built and used to predict the performance of similar wells operated in the Earth's Arctic and Antarctic regions. However, physical parameters (e.g., specific heat and gas constant for air, heat transfer between water and air and between ice and air, etc.) used in the simulation represent a terrestrial environment and must be adjusted for a Martian environment. A pair of experiments designed to determine the appropriate values for these parameters under Martian conditions is described. Until results from these experiments are available, published results from other sources are used in the simulation to gain an understanding of the effect that could be seen. These provisional results are discussed.

Hoffman, Stephen J.↗
NASA NTRS2019

Defining Well Clear Separation for Unmanned Aircraft Systems Operating with Non-Cooperative Aircraft

Detect-and-Avoid (DAA) systems are essential to the safe operations of Unmanned Aircraft Systems, and have the objectives of mitigating collisions with and remaining Well Clear of manned aircraft. This paper analyzes four candidate DAA Well Clear definitions for non-cooperative aircraft using mitigated performance metrics of DAA systems. These DAA Well Clear definitions were proposed in previous work based on their unmitigated collision risk and maneuver initiation range. In this work they are evaluated using safety and operational suitability metrics computed from a large number of representative encounters. Results suggest that although the four candidate DAA Well Clear definitions provide comparable safety, the alerting characteristics give preference for the DAA Well Clear definition without a temporal parameter.

Chen, Christine C.↗
NASA NTRS1986

Impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures

Impact ionization across the band-edge discontinuity of quantum-well heterostructures is studied theoretically. A heterolayer structure of alternating Al(x)Ga(1-x)As and GaAs layers is considered where the GaAs layers are heavily doped with donors. Thus a large number of electrons is confined to the quantum-well region. Incident electrons are heated up by applied electric fields and collide with the electrons confined in the well regions. Both the ionization rate as a function of the incident energy, and average ionization rates are computed. Device applications of such multiple quantum-well structures and the possibility of a complete analog to the conventional photomultiplier are discussed.

Chuang, S. L.↗
NASA NTRS1987

Theory of resonant tunneling in a variably spaced multiquantum well structure - An Airy function approach

A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an exact solution of the Schroedinger equation under the application of a constant electric field. By use of the transfer matrix approach, the transmissivity of the structure is determined as a function of the incident electron energy. The approach presented herein is easily extended to many layer structures where it is more accurate than other existing transfer matrix or Wentzel-Kramers-Brillouin (WKB) models. The transmission resonances are compared to the bound-state energies calculated for a finite square well under bias using either an asymmetric square-well model or the exact solution of an infinite square well under the application of an electric field. The results show good agreement with other existing models as well as with the bound-state energies. The calculations were then applied to a new superlattice structure, the variably spaced superlattice energy filter, which is designed such that under bias the spatial quantization levels fully align. Based on these calculations, a new class of resonant tunneling superlattice devices can be designed.

Brennan, K. F.↗
NASA NTRS1987

Anisotropic transport in modulation-doped quantum-well structures

Anisotropic electron transport has been observed in GaAs modulation-doped quantum wells grown by molecular-beam epitaxy on a thick (001) Al(0.3)Ga(0.7)As buffer grown at 620 C. Thicker quantum wells (150, 200, and 300 A) show progressively less anisotropy, which vanishes for a 300-A quantum well. The degree of anisotropy is also reduced or eliminated by suspending growth of the Al(0.3)Ga(0.7)As for a period of 300 s prior to growing the GaAs quantum well. Growing the Al(0.3)Ga(0.7)As buffer at higher temperatures (680 C) also reduces the degree of anisotropy. Higher two-dimensional electron gas sheet densities result in less anisotropy.The anisotropy is eliminated by replacing the thick Al(0.3)Ga(0.7)As buffer with a periodic multilayer structure comprising 15 A of GaAs and 200 A of Al(0.3)Ga(0.7)As. The degree of anisotropy is related to the thickness and growth parameters of the Al(0.3)Ga(0.7)As layer grown just prior to the growth of the GaAs.

Radulescu, D. C.↗
NASA NTRS1990

Tunable-Quantum-Well Infrared Detector

Proposed detector of infrared photons based on photon-assisted, resonant quantum-mechanical tunneling between adjacent energy wells in its semiconductor structure. Wavelength adjusted by changing applied voltage. Device contains alternating layers of different seminconductors which form double-quantum-well electron-energy structure. Tunable-quantum-well detectors made on single chip constitutes line imager. Many such devices stacked to form two-dimensional imaging device. Signal-processing circuitry integrated into chip at its lower end. Potential barriers and wells produced by alternating layers of different semiconductor materials. Steepness of slope proportional to applied electric field. Electric field and thicknesses and heights of barriers selected to favor photon-assisted, resonant quantum-mechanical tunneling at chosen photon frequency.

Maserjian, Joseph↗
NASA NTRS1990

Quantum Well Infrared Photodetectors (QWIP)

There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.

Levine, B. F.↗
NASA NTRS1990

AlSb/InAs/AlSb quantum wells

Researchers studied the InAs/AlSb system recently, obtaining 12nm wide quantum wells with room temperature mobilities up to 28,000 cm(exp 2)/V center dot S and low-temperature mobilities up to 325,000 cm(exp 2)/V center dot S, both at high electron sheet concentrations in the 10(exp 12)/cm(exp 2) range (corresponding to volume concentrations in the 10(exp 18)/cm(exp 2) range). These wells were not intentionally doped; the combination of high carrier concentrations and high mobilities suggest that the electrons are due to not-intentional modulation doping by an unknown donor in the AlSb barriers, presumably a stoichiometric defect, like an antisite donor. Inasmuch as not intentionally doped bulk AlSb is semi-insulating, the donor must be a deep one, being ionized only by draining into the even deeper InAs quantum well. The excellent transport properties are confirmed by other observations, like excellent quantum Hall effect data, and the successful use of the quantum wells as superconductive weak links between Nb electrodes, with unprecendentedly high critical current densities. The system is promising for future field effect transistors (FETs), but many processing problems must first be solved. Although the researchers have achieved FETs, the results so far have not been competitive with GaAs FETs.

Kroemer, Herbert↗
NASA NTRS1992

Application of Nuclear Well Logging Techniques to Lunar Resource Assessment

The use of neutron and gamma ray measurements for the analysis of material composition has become well established in the last 40 years. Schlumberger has pioneered the use of this technology for logging wells drilled to produce oil and gas, and for this purpose has developed neutron generators that allow measurements to be made in deep (5000 m) boreholes under adverse conditions. We also make ruggedized neutron and gamma ray detector packages that can be used to make reliable measurements on the drill collar of a rotating drill string while the well is being drilled, where the conditions are severe. Modern nuclear methods used in logging measure rock formation parameters like bulk density and porosity, fluid composition, and element abundances by weight including hydrogen concentration. The measurements are made with high precision and accuracy. These devices (well logging sondes) share many of the design criteria required for remote sensing in space; they must be small, light, rugged, and able to perform reliably under adverse conditions. We see a role for the adaptation of this technology to lunar or planetary resource assessment missions.

Albats, P.↗
NASA NTRS1993

Photoluminescence from narrow InAs-AlSb quantum wells

We report on photoluminescence spectra from narrow InAs-AlSb quantum wells. Strong, clearly resolved peaks for well widths from 2 to 8 monolayers were observed. Transmission electron micrographs show direct evidence for the structural quality of the quantum well structures. The transition energies of the narrowest wells suggest a strong influence of the AlSb X-barrier on the electronic states in the conduction band.

Brar, Berinder↗
NASA NTRS1994

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Hunt, W. D.↗