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Ultraviolet photometry from the Orbiting Astronomical Observatory. XXVIII - Ultraviolet light curves for Alpha Lupi and BW Vulpeculae

Photometric data from the Wisconsin Experiment Package on OAO-2 have been used to construct light curves at three ultraviolet wavelengths for Alpha Lup and at seven wavelengths for BW Vul. Both stars are well-known variables of the Beta Cephei (Beta Canis Majoris) type. The light curves for Alpha Lup are in good agreement with the radial-velocity period. A temperature variation of 400-500 K is derived. The BW Vul light curves confirm recent ephemerides based on a secularly varying period and show a stillstand near light maximum at some wavelengths. Both stars exhibit increasing light amplitude at the shortest ultraviolet wavelengths. There is little evidence for cycle-to-cycle variations on a time scale of the order of 1 day.

Lesh, J. R.↗

Towards prevention and prediction of infectious diseases with virus sterilization using ultraviolet light and low-temperature plasma and bio-sensing devices for health and hygiene care

Inspired by the ideas of many authors, we provide insight on state-of-the-art potential technologies for the prevention and prediction of infectious diseases before they spread. This review also surveys virus sterilization with ultraviolet light and low temperature plasma technologies. Researchers in the various fields of medicine, materials, electronics, and plasma sciences have addressed increasingly challenging demands and the discussion encompasses the major challenges in societies that are faced with the threat of infectious diseases. In addition, technologies that use nanomaterials are evaluated for infection prevention and hygiene purposes. Advances in biomedical diagnostics for health care in terms of complementary metal-oxide-semiconductor transistors-based devices and telemetry for health monitoring are also reviewed.

60 APPLIED LIFE SCIENCES↗

Novel Ultraviolet-Light-Curable Polyimides

Polyimides have found broad application in fiber-reinforced composites for aerospace components and as thin films for electronics packaging. Typical routes to processing these materials require temperatures above 200 C. As a result, tooling costs for fabricating components from these composites can be quite high. Recent efforts within the Polymers Branch at the NASA Lewis Research Center have been aimed at developing radiationcurable (with light or electron beams) polyimides. Such materials may enable the processing of polymers and composites at or near room temperature, leading to reduced tooling requirements and costs. A new Diels-Alder route to polyimides has been developed that employs ultraviolet light (UV), rather than heat, to effect polymerization. This approach, which can be carried out at room temperature, is based on a well-known photochemical reaction--the photoenolization of o-methylphenyl ketones. Irradiation of o-methylphenyl ketones, such as 1 in the preceding figure, with UV wavelengths above 300 nm produces a photoenol, 2. This photoenol is unstable, but it persists long enough to undergo Diels-Alder reactions with good dienophiles, such as maleimide, 3. By utilizing a diketone, such as 2,5-dibenzoylp-xylene, 5, and a bismalemide, 6, this chemistry has been used to make a number of polyimides, 7.

Meador, Michael A.↗

Synchrotron Vacuum Ultraviolet Light and Soft X-Ray Radiation Effects on Aluminized Teflon FEP Investigated

Since the Hubble Space Telescope (HST) was deployed in low Earth orbit in April 1990, two servicing missions have been conducted to upgrade its scientific capabilities. Minor cracking of second-surface metalized Teflon FEP (DuPont; fluorinated ethylene propylene) surfaces from multilayer insulation (MLI) was first observed upon close examination of samples with high solar exposure retrieved during the first servicing mission, which was conducted 3.6 years after deployment. During the second HST servicing mission, 6.8 years after deployment, astronaut observations and photographic documentation revealed significant cracks in the Teflon FEP layer of the MLI on both the solar- and anti-solar-facing surfaces of the telescope. NASA Goddard Space Flight Center directed the efforts of the Hubble Space Telescope MLI Failure Review Board, whose goals included identifying the low-Earth-orbit environmental constituent(s) responsible for the cracking and embrittling of Teflon FEP which was observed during the second servicing mission. The NASA Lewis Research Center provided significant support to this effort. Because soft x-ray radiation from solar flares had been considered as a possible cause for the degradation of the mechanical properties of Teflon FEP (ref. 1), the effects of soft xray radiation and vacuum ultraviolet light on Teflon FEP were investigated. In this Lewisled effort, samples of Teflon FEP with a 100-nm layer of vapor-deposited aluminum (VDA) on the backside were exposed to synchrotron radiation of various vacuum ultraviolet and soft x-ray wavelengths between 18 nm (69 eV) and 0.65 nm (1900 eV). Synchrotron radiation exposures were conducted using the National Synchrotron Light Source at Brookhaven National Laboratory. Samples of FEP/VDA were exposed with the FEP surface facing the synchrotron beam. Doses and fluences were compared with those estimated for the 20-yr Hubble Space Telescope mission.

Dever, Joyce A.↗

The effects of ultraviolet light on the degradation of organic compounds - A possible explanation for the absence of organic matter on Mars

The analysis of the top layer of the Martian regolith at the two Viking landing sites did not reveal any indigenous organic compounds. However, the existence of such compounds at deeper layers cannot be ruled out. Cosmochemical considerations indicate various potential sources for organic matter on Mars, such as comets and meteorites. The study tested the stability of a sample of the Murchison meteorite and various organic substances which have been detected in carbonaceous chondrites, such as glycine, adenine and naphthalene, to the action of ultraviolet light. The compounds were adsorbed on powdered quartz and on California desert soil and were irradiated in the presence or absence of oxygen. The organic content, before and after irradiation, was measured by carbon elementary analysis, UV-absorption, amino acid analysis or pyrolysis-gas chromatography-mass spectrometry. In the absence of oxygen, adenine and glycine appear to be stable over the given part of irradiation. A definite degradation was noticed in the case of naphtalene and the Murchison meteorite. In the presence of oxygen in amounts comparable to those on Mars all compounds were degraded. The degree of degradation was influenced by the irradiation time, temperature and oxygen content.

Oro, J.↗

Ultraviolet light curves of the dwarf novae U Geminorum and VW Hydri

The optical light curves of many dwarf novae show a prominent hump. This hump is attributed to a hot spot located where the gas stream from the cool secondary star strikes the accretion disk around the white dwarf primary. In the present investigation, the energy distribution of the hot spot is obtained from the amplitude of the hump in different wavelength regions. The color temperature of the hot spot is derived, and the temperature and optical thickness for thermal free-free emission models for the spot is discussed. The nature of the disk is studied by comparing its UV-optical energy distribution with computed accretion disk models. The ultraviolet light curves of two quiescent dwarf novae, U Gem and VW Hyi is derived by combining Astronomical Netherlands Satellite (ANS) photometry from several different epochs.

Wu, C.-C.↗

Vacuum ultraviolet light source utilizing rare gas scintillation amplification sustained by photon positive feedback

A source of light in the vacuum ultraviolet (VUV) spectral region includes a reflective UV-sensitive photocathode supported in spaced parallel relationship with a mesh electrode within a rare gas at low pressure. A high positive potential applied to the mesh electrode creates an electric field which causes drifting of free electrons occurring between the electrodes and producing continuous VUV light output by electric field-driven scintillation amplification sustained by positive photon feedback mediated by photoemission from the photocathode. In one embodiment the lamp emits a narrow-band continuum peaked at 175 nm.

Aprile, Elena↗

Vacuum-ultraviolet light source for enhanced production of metastable krypton and xenon beams

Here, we demonstrate excitation of metastable krypton and xenon beams using a vacuum ultraviolet lamp and directly compare the performance of this method to metastable excitation based on a radio-frequency-driven plasma discharge. In our apparatus, lamp-based metastable excitation outperforms the plasma discharge across a wide range of beam flux values relevant for atom trap trace analysis (ATTA). Moreover, we do not observe significant degradation in lamp performance after over 160 h of operation. We find that lamp-based excitation is particularly advantageous at the smallest and largest beam fluxes tested, demonstrating the utility of this approach both for improving krypton ATTA and for enabling the detection of radioactive xenon isotopes using ATTA. Finally, we demonstrate an additional enhancement to lamp-based metastable excitation efficiency and stability by applying an external magnetic field.

Metastable noble gases↗

Bismuth-oxo Clusters for Next Generation Extreme Ultraviolet Light Photolithography

Photolithography is the primary technique used for the patterning of semiconducting materials for chip manufacturing; however, as requisite pattern dimensions and feature sizes continue to decrease, state-of-the-art lithographic methods now require the use of 13.5 nm extreme ultraviolet (EUV) light. The shift toward these higher energy wavelengths of light has resulted in a need for new single component materials, with high EUV absorption cross sections and high etch resistance. Herein, we report the exploration of Bi 9 O 7 (hfac) 13 as the first bismuth oxo cluster based EUV photoresist. It was determined this material has an exceptional EUV linear absorption coefficient (24 μm –1 ), nearly an order of magnitude larger than commercially available chemically amplified resists (CARs) (∼5 μm –1 ). Additionally, the resist was determined to be highly sensitive to EUV exposure and displayed a dose-to-gel of 10 mJ/cm 2 , undergoing ligand decomposition during exposure and cross-linking during the postexposure bake, which was supported by FTIR and residual gas analysis. In conclusion, this class of bismuth-oxo cluster resists can lead to the development of more efficient, effective and safe EUV resist materials required for next-generation photolithography.

MacKenzie, Harvey K. [Univ. of Victoria, BC (Canad↗

Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters

The effect of inserting a nm-scale layer of Zn(Si,Ge)N2 into an AlGaN quantum well structure designed for light emission in the wavelength range from 255 to 305 nm is investigated here. The enhanced confinement of the hole within the quantum well results in an enhancement of the overlap of the hole and electron wave functions, resulting in an enhancement of the radiative recombination rate. In this theoretical calculation, for emission at a 270 nm wavelength, the enhancement in the wavefunction overlap can reach a factor of 7 when compared to an AlGaN quantum well device specifically engineered for optimal emission at the identical wavelength. Increases of almost an order of magnitude in both the peak spontaneous emission intensity and the radiative recombination rate are predicted. The peak emission wavelength can be tuned from 255 to 305 nm by adjusting the width and/or the composition of the inserted layer. The proposed structures provide a route to higher efficiency ultraviolet practical light emitting diodes and lasers.

Physics↗

Extreme ultraviolet light curves of UZ Fornacis: Evidence for accretion stream absorption and vertical extent of the accretion spot

We report on two pointed observations of UZ For carried out by the imaging photometers aboard the Extreme Ultraviolet Explorer (EUVE), one as part of the EUVE Right Angle Program and one as an off-axis source during a guest observation. Both observations lasted approximately 3 days and covered a total of 72 orbits of the UZ For binary providing multiple coverage of all the orbital phases of UZ For. The resulting high signal-to-noise phase-folded light curve strongly constrains the emission and absorption geometry of UZ For. We have detected a narrow absorption dip that we attribute to the accretion stream at the location of the stagnation region many white dwarf radii away from the accretion spot and have also detected a broad dip caused by absorption much closer to the white dwarf surface. Both absorption effects are variable in time and phase. Based on the timescales of M-star eclipse ingress and egress, the angular spot size is constrained to be less than 5 deg; thus the ratio of spot area to white dwarf surface area is less than or equal to 0.0005. To explain the light curve phase duration given this small angular spot size, the extreme-ultraviolet (EUV) accretion spot must be raised vertically by approximately 5% of the white dwarf radius.

Warren, John K.↗

Shedding far-ultraviolet light on the donor star and evolutionary state of the neutron-star LMXB Swift J1858.6−0814

ABSTRACT The evolution of accreting X-ray binary systems is closely coupled to the properties of their donor stars. Consequently, we can constrain the evolutionary track a system is by establishing the nature of its donor. Here, we present far-ultraviolet (far-UV) spectroscopy of the transient neutron-star low-mass X-ray binary J1858 in different accretion states (low-hard, high-hard, and soft). All of these spectra exhibit anomalous N v, C iv, Si iv, and He ii lines, suggesting that its donor star has undergone CNO processing. We also determine the donor’s effective temperature, Td ≃ 5700 K, and radius, Rd ≃ 1.7 R⊙, based on photometric observations obtained during quiescence. Lastly, we leverage the transient nature of the system to set an upper limit of $\dot{M}_{\rm acc} \lesssim 10^{-8.5}~{\rm M}_{\odot }~\mathrm{ yr}^{-1}$ on the present-day mass-transfer rate. Combining these with the orbital period of the system, Porb = 21.3 h, we search for viable evolution paths. The initial donor masses in the allowed solutions span the range 1 M⊙ ≲ Md,i ≲ 3.5 M⊙. All but the lowest masses in this range are consistent with the strong CNO-processing signature in the UV line ratios. The present-day donor mass in the permitted tracks are 0.5 M⊙ ≲ Md,obs ≲ 1.3 M⊙, higher than suggested by eclipse modelling. Since Porb is close to the so-called bifurcation period, both converging and diverging binary tracks are permitted. If the former is confirmed, J1858 will end its life as an ultracompact system with a substellar donor.

Castro Segura, N. (ORCID:0000000258700443)↗

The rapid transition from star formation to AGN-dominated rest-frame ultraviolet light at z ≃ 4

ABSTRACT With the advent of deep optical-to-near-infrared extragalactic imaging on the degree scale, samples of high-redshift sources are being selected that contain both bright star-forming (SF) galaxies and faint active galactic nuclei (AGN). In this study, we investigate the transition between SF- and AGN-dominated systems at z ≃ 4 in the rest-frame ultraviolet (UV). We find a rapid transition to AGN-dominated sources brightward of MUV ≃ −23.2. The effect is observed in the rest-frame UV morphology and size–luminosity relation, where extended clumpy systems become point-source-dominated, and also in the available spectra for the sample. These results allow us to derive the rest-frame UV luminosity function (LF) for the SF- and AGN-dominated subsamples. We find the SF-dominated LF is best fit with a double power law, with a lensed Schechter function being unable to explain the existence of extremely luminous SF galaxies at MUV ≃ −23.5. If we identify AGN-dominated sources according to a point-source morphology criterion, we recover the relatively flat faint-end slope of the AGN LF determined in previous studies. If we instead separate the LF according to the current spectroscopic AGN fraction, we find a steeper faint-end slope of α = −1.83 ± 0.11. Using a simple model to predict the rest-frame AGN LF from the z = 4 galaxy LF, we find that the increasing impact of host galaxy light on the measured morphology of faint AGN can explain our observations.

Bowler, R. A. A.↗

2,4–dinitroanisole transformation during advanced oxidation with ultraviolet light emitting diodes and hydrogen peroxide

This study investigated the kinetics and reaction mechanisms associated with advanced oxidation of 2,4-dinitroanisole (DNAN) with light emitting diodes (LEDs) in the UV/H2O2 process. The pseudo first-order reaction rate constants for DNAN oxidation depended on the H 2 O 2 /DNAN molar ratio and were between 0.017 and 0.026 min –1 . Hydroxyl radical scavenging was strongly implicated by the experimental results. High mass spectrophotometric chromatograms showed the presence of several by-products, including three with ecotoxicity that is greater than that of DNAN. Transformation pathways were analysed using Density Functional Theory (DFT), which helped to predict the presence of experimentally detected DNAN by-products by considering Mulliken charges. Furthermore, this study is the first to elucidate DNAN transformation mechanisms using both experimental studies and computational chemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

CMOS-fabricated ultraviolet light modulator using low-loss alumina piezo-optomechanical photonics

Ultra-violet (UV) and near-UV wavelengths are necessary for many important optical transitions for quantum technologies and various sensing mechanisms for biological and chemical detection. However, all well-known photonic platforms have excessively high losses in the UV, which has prevented photonic integrated circuits (PICs) being used to address these and other important application spaces. Photonic waveguides using low-loss alumina cores and silicon dioxide cladding have emerged as a promising solution because of alumina’s large optical bandgap and the high quality of films enabled by atomic layer deposition. These properties allow passive, low-loss waveguide operation down to at least 266 nm using multimode widths. However, to the best of our knowledge, active alumina PICs have only been realized using thermo-optic tuning, which precludes switching speeds shorter than approximately 100 microseconds, high circuit densities, and cryogenically compatible operation. Here, we introduce a CMOS-fabricated, piezo-optomechanical PIC platform using alumina waveguides and piezoelectric aluminum nitride strain actuators. The platform allows for sub-microsecond switching times, high circuit densities, and cryogenic operation which is desired in many UV PIC applications. We demonstrate a high-performance, reconfigurable optical filter operating at wavelengths as low as 320 nm. The filter has a 6-nanosecond switching time, a loaded linewidth of 3.3 GHz, tuning rate of 28 V/linewidth, and a hold power of less than 20 nW at one linewidth detuning. This work establishes the foundations for a new class of CMOS-fabricated, rapidly reconfigurable, and low-power UV photonic circuits compatible with wavelengths as low as 225 nm.

Castillo, Zachary A. [Sandia National Laboratories↗