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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Structural anisotropy in Sb thin films

Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence on their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb 2 flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (211) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1̄10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection of high-energy electron diffraction patterns, misfit dislocation formation, surface morphology, and transport properties. Our DFT calculations show that the preferential orientation of the rhombohedral Sb (211) plane may originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi 1-x Sb x thin films with similar lattice parameters and an identical crystal structure, as well as functional heterostructures of them with III–V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation.

36 MATERIALS SCIENCE↗
NASA NTRS1992

Generating Far-Infrared Radiation By Two-Wave Mixing

Far-infrared radiation 1 to 6 GHz generated by two-wave mixing in asymmetrically grown GaAs/AlxGa1-xAs multiple-quantum-well devices. Two near-infrared semiconductor diode lasers phase-locked. Outputs amplified, then combined in semiconductor nonlinear multiple-quantum-well planar waveguide. Necessary to optimize design of device with respect to three factors: high degree of confinement of electromagnetic field in nonlinear medium to maximize power density, phase matching to extend length of zone of interaction between laser beams in non-linear medium, and nonlinear susceptibility. Devices used as tunable local oscillators in heterodyne-detection radiometers.

Borenstain, Shmuel↗
DOE OSTI2020

Broad band tunable energy electron beam pulser

An electromagnetic mechanical pulser implements a transverse wave metallic comb stripline TWMCS kicker having inwardly opposing teeth that retards a phase velocity of an RF traveling wave to match the kinetic velocity of a continuous electron beam, causing the beam to oscillate before being chopped into pulses by an aperture. The RF phase velocity is substantially independent of RF frequency and amplitude, thereby enabling independent tuning of the electron pulse widths and repetition rate. The TWMCS further comprises an electron pulse picker (EPP) that applies a pulsed transverse electric field across the TWMCS to deflect electrons out of the beam, allowing only selected electrons and/or groups of electrons to pass through. The EPP pulses can be synchronized with the RF traveling wave and/or with a pumping trigger of a transverse electron microscope (TEM), for example to obtain dynamic TEM images in real time.

42 ENGINEERING↗
NASA NTRSDate not supplied

Tunable Mid-wave Infrared Fabry-Perot Bandpass Filters Using Phase-Change GeSbTe

Tunable mid-wave infrared (MWIR) filters are highly desirable in a wide variety of imaging and sensing, as the MWIR contains numerous spectral signatures. We fabricated spectrally-tunable Fabry-Perot bandpass filters operating across the MWIR by utilizing the phase-change material GeSbTe (GST) as a tunable cavity medium between distributed Bragg reflectors. The induced refractive index modulation of the GST increases the cavity’s optical path length, tuning the passband. Our filters have 300-nm spectral tunability, 60-75% transmission efficiencies, and 50-65 nm narrowband FWHMs (Q-factor 70-90). We demonstrate multispectral thermal imaging and dynamic gas sensing by matching the filter’s passband (~ 4.25μm) to a CO2 vibrational-absorption mode.

Tunable filter↗
NASA NTRS2001

Mid-infrared trace gas detection using continuous-wave difference frequency generation in periodically poled RbTiOAsO4

A tunable mid-infrared continuous-wave (cw) spectroscopic source in the 3.4-4.5 micrometers region is reported, based on difference frequency generation (DFG) in a quasi-phase-matched periodically poled RbTiOAsO4 (PPRTA) crystal. DFG power levels of 10 microW were generated at approximately 4 micrometers in a 20-mm long PPRTA crystal by mixing two cw single-frequency Ti:Al2O3 lasers operating near 713 nm and 871 nm, respectively, using a laser pump power of 300 mW. A quasi-phase-matched infrared wavelength-tuning bandwidth (FWHM) of ~ 12 cm-1 and a temperature tuning rate of 1.02 cm-1/degree C were achieved. Experimental details regarding the feasibility of trace gas detection based on absorption spectroscopy of CO2 in ambient air using this DFG radiation source are also described.

NASA Discipline Life Sciences Technologies↗
DOE OSTI2019

Broad band tunable energy electron beam pulser

An electromagnetic mechanical pulser implements a transverse wave metallic comb stripline TWMCS kicker having inwardly opposing teeth structured to retard a phase velocity of an RF traveling wave propagated therethrough to match the kinetic velocity of a continuous electron beam simultaneously propagated therethrough. The kicker imposes transverse oscillations onto the beam, which is subsequently chopped into pulses by an aperture. The RF phase velocity is substantially independent of RF frequency and amplitude, thereby enabling independent tuning of the electron pulse widths and repetition rate. The exterior surface of the kicker is conductive, thereby avoiding electron charging. In embodiments, various elements of the kicker and/or aperture can be mechanically varied to provide further tuning of the pulsed electron beam. A divergence suppression section can include a mirror TWMCS and/or magnetic quadrupoles. RF can be applied to a down-selecting TWMCS downstream of the aperture to reduce the pulse repetition rate.

Jing, Chunguang↗
DOE OSTI2026

A Systematic Framework for Tuning Open-Source Multifunctional IBR Models To Emulate OEM Black-Box Fault Dynamics

This paper presents a systematic framework to tune a generic IBR EMT model to match with an OEM provided balckbox inverter model based on the fault current responses. The key learnings and findings are summarized as follows: The tunable key parameters include inner control loops and current limiters to align the fault current magnitude, sequence content, and phase trajectories with the OEM models across diverse fault type and locations. The tuned model's fidelity is validated through comparative analysis with an OEM blackbox model, assessing both the fault current response and the responses of multiple relay elements. The results demonstrate the tuned generic model can trigger relay decision logic that is identical or near identical to that of the OEM model, thus generating very good match model for fault studies.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS2008

Wide-Band Microwave Receivers Using Photonic Processing

In wide-band microwave receivers of a type now undergoing development, the incoming microwave signals are electronically preamplified, then frequency-up-converted to optical signals that are processed photonically before being detected. This approach differs from the traditional approach, in which incoming microwave signals are processed by purely electronic means. As used here, wide-band microwave receivers refers especially to receivers capable of reception at any frequency throughout the range from about 90 to about 300 GHz. The advantage expected to be gained by following the up-conversion-and-photonic-processing approach is the ability to overcome the limitations of currently available detectors and tunable local oscillators in the frequency range of interest. In a receiver following this approach (see figure), a preamplified incoming microwave signal is up-converted by the method described in the preceeding article. The frequency up-converter exploits the nonlinearity of the electromagnetic response of a whispering gallery mode (WGM) resonator made of LiNbO3. Up-conversion takes place by three-wave mixing in the resonator. The WGM resonator is designed and fabricated to function simultaneously as an electro-optical modulator and to exhibit resonance at the microwave and optical operating frequencies plus phase matching among the microwave and optical signals circulating in the resonator. The up-conversion is an efficient process, and the efficiency is enhanced by the combination of microwave and optical resonances. The up-converted signal is processed photonically by use of a tunable optical filter or local oscillator, and is then detected. Tunable optical filters can be made to be frequency agile and to exhibit high resonance quality factors (high Q values), thereby making it possible to utilize a variety of signal-processing modalities. Therefore, it is anticipated that when fully developed, receivers of this type will be compact and will be capable of both wide-band and narrowband signal processing. Thus, one compact receiver of this type would afford the functionality that, heretofore, could have been obtained only by use of multiple heterodyne microwave receivers.

Matsko, Andrey↗
DOE OSTI2026

A New Platform for Twistronics: Perovskite Moiré Superlattices Beyond van der Waals

Moiré superlattices have reshaped condensed‐matter physics by enabling twist‐angle engineering of electronic and excitonic states, traditionally in van der Waals (vdW) systems. This Perspective focuses on perovskites as a transformative non‐van der Waals (non‐vdW) platform for twistronics. These materials are distinguished by ionic‐covalent bonding and soft octahedral lattices that support deep moiré potentials (≈100–200 meV), which in turn yield bright, room‐temperature excitons and tunable quantum phenomena. We organize recent advances into two core classes: (i) moiré superlattices constructed from 2D Ruddlesden‐Popper (RP) perovskites via spontaneous or guided twisted stacking; and (ii) moiré architectures in 3D perovskite lamellae, achieved through topotactic 2D RP‐to‐3D conversion and ligand‐induced self‐assembly. Key experimental observations in these systems include twist‐tunable moiré periods, suppressed exciton–exciton annihilation, flat band‐like transport, and ferroelectric vortex lattices in their oxide perovskite counterparts. Here, we outline key bottlenecks, including defects arising during phase conversion, stringent lattice‐matching requirements, and the absence of in situ twist metrology, and highlight opportunities in lattice‐mismatched heterostructures and multifunctional quantum‐optoelectronic devices. Collectively, these advances establish perovskite moiré systems as a critical bridge between fundamental moiré physics and room‐temperature technological applications.

2D Ruddlesden–Popper perovskites↗
NASA NTRSDate not supplied

Modeling Electro-Optic Frequency Comb Generation as a Pump Source for Quantum Communications

The Quantum Communications group at NASA GRC is focused on developing technologies and system architectures to enable future space-based quantum networks. High-repetition rate pulsed pump lasers are needed because the signal on the quantum channel cannot be amplified, hence entanglement generation rates can only be increased through high-rate pumping. Additionally, tunability in center frequency, pulse width, and repetition rate allows for a wider parameter space over which to optimize quantum channel frequency conversion efficiency, joint spectral engineering, and channel synchronization for high-fidelity entanglement swapping –a necessary stepping-stone towards quantum repeater development. One of the most flexible methods for high-repetition rate pulse generation is through spectral shaping–generating a frequency comb from a continuous-wave(CW)laser using electro-optic modulators (EOMs). As a result, this project focuses on analytically modeling and simulating the effects various EOMs such as phase and intensity modulators have on a CW source. Generating a tunable frequency comb as the pump source allows us to conveniently fine-tune the central frequency, repetition rate, and the spectral shape of our source to match the strict optimal parameters for any given entanglement source considered in the future. These models and simulations are to be used for comparison purposes for future experiments as well as for providing the Quantum Communications group a convenient tool to understand the effects of manipulating various parameters have on the outgoing frequency comb.

Electro-optic modulator↗
DOE OSTI2025

Design of Hopfield Networks Based on Superconducting Coupled Oscillators

The global energy shortage has driven the development of many energy-efficient computational platforms beyond Moore's law, among which brain-inspired neuromorphic computing is one of the promising solutions. Associative memory and pattern recognition are important computations solved by brain-inspired Hopfield networks. Classical Hopfield networks store memories via fixed point attractors of their dynamics. In oscillatory Hopfield networks, these attractors are replaced by periodic orbits. Here, we design an oscillatory Hopfield network based on coupled superconducting oscillators. We first employ a mathematical phase reduction approach to map networks of coupled superconducting rapid single flux quantum (RSFQ) ring oscillators to coupled Kuramoto phase-oscillator networks. We use this theory to numerically optimize the hardware's mutual inductances in order to directly match the phase-reduced superconducting oscillators to a model of phase-oscillator-based Hopfield networks. The resulting network can store multiple oscillatory phase-locked memory patterns and recover the patterns based on the initial phase conditions. As different pattern recognition tasks, or learning, require tunable connectivity strengths between the oscillatory nodes, we further employ a coupler circuit that enables tuning the coupling strength between two oscillators by applying an external flux. We demonstrate the functionality of our design through numerical simulations of a small example network with oscillators operating at 86 GHz and recognizing patterns within 10 ns. Our approach enables the learning and retrieval of dynamical memory patterns with a wide range of applications where rhythmic dynamic output is beneficial.

Cheng, Ran↗
DOE OSTI2020

Disorder-Tunable ZnGeP2 for Epitaxial Top Cells on Si

There has been a longstanding search for top cell materials for Si-based tandems. ZnGeP 2 is one material that could fit this need. It is lattice matched to Si and has the potential for tuning its band gap at fixed lattice constant via cation ordering. In this study, we investigate the effects of growth and annealing conditions on the structure of ZnGeP 2 thin films. Films were deposited amorphous and then annealed ex-situ. Using low anneal temperatures or short anneal times, we were able to kinetically trap the disordered phase. We also found composition to play a role in the degree of ordering in our films. Our findings support the hypothesis that ZnGeP 2 could be implemented as a material with tunable properties at fixed lattice constant through cation ordering.

14 SOLAR ENERGY↗
DOE OSTI2019

Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys

InGaN light-emitting diodes (LEDs) are more efficient and cost effective than incandescent and fluorescent lighting, but lattice mismatch limits the thickness of InGaN layers that can be grown on GaN without performance-degrading dislocations. Here, we apply hybrid density functional theory calculations to investigate the thermodynamic stability, lattice parameters, and bandgaps of wurtzite and zincblende quaternary BInGaN alloys. We discover that the wurtzite phase is more stable and can be lattice matched to GaN for BInGaN compositions containing up to ~30% boron. The lattice match with GaN decreases strain and enables thicker active layers that mitigate Auger recombination and increase the efficiency of the LEDs. The bandgap of the alloy remains tunable throughout the visible spectrum. Our results indicate that BInGaN alloys are promising alternatives to InGaN for high-efficiency, high-power LEDs.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Stroboscopic ultrafast imaging using RF strip-lines in a commercial transmission electron microscope

The development of ultrafast electron microscopy (UEM), specifically stroboscopic imaging, has brought the study of structural dynamics to a new level by overcoming the spatial limitations of ultrafast spectroscopy and the temporal restrictions of traditional TEM simultaneously. Combining the concepts governing both techniques has enabled direct visualization of dynamics with spatiotemporal resolutions in the picosecond-nanometer regime. Here, in this study, we push the limits of imaging using a pulsed electron beam via RF induced transverse deflection based on the newly developed 200 keV frequency-tunable strip-line pulser. We demonstrate 0.2 nm spatial resolution at high magnifications and elucidation of Lorentz imaging using the phase-microscopy method. We also present beam coherence measurements and expand our study using the breathing modes of a silicon interdigitated comb under RF excitation which achieves improved temporal synchronization between the electron pulse-train and electric field. A new RF holder has also been developed with impedance matching to the RF signal to minimize transmission power loss to samples and its performance is compared with a conventional sample holder.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Advances in Molecular Beam Epitaxy Growth of Ultra-Wide Bandgap Ga2O3 Based Alloys

Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap semiconductor material that has attracted attention for its potential to outperform existing SiC and GaN based devices operating at high breakdown voltages and high temperature. Isovalent alloying of In and Al in Ga2O3 provides the ability to engineer bandgap energy and strain of the material. Alloying with Al increases the bandgap energy and the theoretically achievable Baliga's figure of merit, a key measure of a material's ultimate performance limits for high power switching devices. Alloying with In introduces compressive strain and can be used to counteract the tensile strain of Al incorporation. The resulting (AlxGa1-x-yIny)2O3 alloy can be lattice-matched to commercially available Ga2O3 wafers and has a tunable bandgap energy greater than that of Ga2O3, 4.76 eV. Such lattice-matched material can be grown arbitrarily thick without the detrimental effects of elastic strain and relaxation, making it suitable for high voltage diodes and transistors. However, efforts to synthesize isovalent alloys are complicated by their tendency to phase separate into corundum Al2O3 or bixbyite In2O3. Literature reports of the quaternary (AlxGa1-x-yIny)2O3 are limited to <1% unintentional indium incorporation in In-catalyzed (AlxGa1-x)2O3. The primary limitation to quaternary growth is the limited incorporation of indium at elevated growth temperatures. This limited incorporation is due to both the volatility of indium oxide and Al and Ga cation exchange reactions which replace indium in In2O3. We report on the development of a novel high-throughput molecular beam epitaxy (MBE) technique to screen the growth conditions for the ternary alloy (InyGa1-y)2O3, and the application of these findings to the first successful synthesis of phase pure monoclinic (AlxGa1-x-yIny)2O3 by MBE. By leveraging the unique sub-oxide chemistry of Ga2O3 and in-situ monitoring of crystal properties by reflection high-energy electron diffraction (RHEED), a cyclical growth and etch-back method is developed and applied to rapidly characterize the (InyGa1-y)2O3 growth space. This cyclical method provides approximately 10x increase in experimental throughput and up to 46x improvement in Ga2O3 substrate utilization. Appropriate growth conditions for monoclinic (InyGa1- y)2O3 are identified by machine learning analysis of RHEED patterns and targeted growths are characterized ex-situ to confirm improved In incorporation. These growth conditions are then combined with established (AlxGa1-x)2O3 growth conditions to grow quaternary (AlxGa1-x-yIny)2O3 with Al mole fractions ranging from 1.4% - 24.4% and In mole fractions ranging from 3.1% to 15.5%. The chemical and optical properties of the alloys are investigated by XRD, XPS, and spectroscopic ellipsometry. A lattice-matched (AlxGa1-x-yIny)2O3 alloy is examined by 4D-STEM and the chemical and physical uniformity of Al and In incorporation are discussed.

alloy↗
DOE OSTI2025

Nonlinear optics in 2D materials: From classical to quantum

Nonlinear optics has long been a cornerstone of modern photonics, enabling a wide array of technologies, from frequency conversion to the generation of ultrafast light pulses. Recent breakthroughs in two-dimensional (2D) materials have opened a frontier in this field, offering new opportunities for both classical and quantum nonlinear optics. These atomically thin materials exhibit strong light–matter interactions and large nonlinear responses, thanks to their tunable lattice symmetries, strong resonance effects, and highly engineerable band structures. In this paper, we explore the potential that 2D materials bring to nonlinear optics, covering topics from classical nonlinear optics to nonlinearities at the few-photon level. We delve into how these materials enable possibilities, such as symmetry control, phase matching, and integration into photonic circuits. The fusion of 2D materials with nonlinear optics provides insights into the fundamental behaviors of elementary excitations—such as electrons, excitons, and photons—in low-dimensional systems and has the potential to transform the landscape of next-generation photonic and quantum technologies.

2D materials↗
DOE OSTI2023

Plasma production and ion heating systems for the Material Plasma Exposure eXperiment

Plasma production and ion heating in the Material Plasma Exposure eXperiment (MPEX), whose design is nearing completion, is accomplished using continuous wave RF power with average power density up to 1.6 MW/m2 at the plasma interface. Plasma is produced using helicon waves coupled through a single helical antenna at 13.56 MHz with power supplied by three 100 kW fixed-frequency RF generators feeding a power combiner network followed by the matching network and launcher. The helicon source can utilize various gasses including hydrogen, deuterium, and helium, with a magnetic field strength in the source region up to 0.2 T, and maximum device |B| of 2.5 T. Power is coupled to ions via ion cyclotron heating at the fundamental resonance using a pair of phased helical antennas operating in the frequency range 4-9 MHz, that launch waves towards the resonance from the antenna region where ω > ωci. ICH power is supplied by a single 500 kW tunable RF transmitter through a 90° power splitter and matching/decoupling network. In the case of both the helicon and ICH systems the antennas are located external to the vacuum, with power transferred through novel water-cooled coaxial vacuum windows consisting of fused quartz outer cylinders and silicon nitride inner cylinders with forced convection water cooling between them. The antenna enclosures are pressurized with dry air to 3 bar absolute for voltage standoff.Several 3-D COMSOL models have been created to simulate the two systems. A model of the helicon region utilizing a cold plasma dielectric tensor with accurate magnetic field and realistic plasma density profiles has been used to calculate the plasma loading/complex antenna input impedance at the launcher feed for various ne and |B| values, for the purpose of estimating power handling. It also incorporates the geometry of all launcher structures relevant to this determination. A still more detailed model of the launcher together with a lossy dielectric plasma surrogate has been used to determine RF electric field values and power losses in the device components.Similar models have been produced to predict the performance and power handling of the ICH launcher. For this device the impedance matrix of the two-element antenna array is calculated using a warm plasma model, necessary to properly determine the wave propagation and absorption.

Goulding, Richard↗
DOE OSTI2025

Tunable 3D Aerosol Jet Printing of Low‐Power Redox‐Gated Transistors with Multicomponent Inks

Printed hybrid electronics (PHE) offer a promising alternative for microelectronics fabrication, addressing some limitations of traditional subtractive manufacturing. Despite the versatility of PHE, particularly in the customization of printing inks, these devices have not yet matched the performance of silicon-based electronics due to challenges in gating mechanisms and operational stability. However, the potential of low-voltage redox-gating to achieve significant carrier modulations in correlated metal oxides remains unexplored in PHE. This study systematically investigates vanadium dioxide (VO 2 ) nanoparticles and redox inks, linking their organization in solution to their morphology, phase state, and properties in solid films and multilayered structures. Using an aerosol jet printer (AJP), a solid-state VO 2 transistor is fabricated, operating at just 0.4 V gating voltage. The printed VO 2 films demonstrate redox-modulated conductivity and consistent transistor behavior. The solid-state redox gating materials also provide long-term stability, with the device maintaining performance over 6000 cycles without degradation. These results highlight the potential of redox gating to enhance the application of functional nanoparticles in printed hybrid microelectronics, especially for flexible, low-voltage, and energy-efficient devices.

36 MATERIALS SCIENCE↗