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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Compositional redistribution during casting of Hg(0.8)Cd(0.2)Te alloys

A series of Hg(0.8)Cd(0.2)Te ingots was cast both vertically and horizontally under well-defined thermal conditions by using a two-zone furnace with isothermal heat-pipe liners. The main objective of the experiments was to establish correlations between casting parameters and compositional redistribution and to develop ground-based data for a proposed flight experiment of casting of Hg(1-x)Cd(x)Te alloys under reduced gravity conditions. The compositional variations along the axial and radial directions were determined by precision density measurements, infrared transmission spectra, and X-ray energy dispersion spectrometry. Comparison between the experimental results and a numerical simulation of the solidification process of Hg(0.8)Cd(0.2)Te is described.

Su, Ching-Hua↗
NASA NTRS1993

Fabrication of Si-As-Te ternary amorphous semiconductor in the microgravity environment (M-13)

Ternary chalcogenide Si-As-Te system is an interesting semiconductor from the aspect of both basic physics and technological applications. Since a Si-As-Te system consists of a IV-III-II hedral bonding network, it has a very large glass forming region with a wide physical constant controllability. For example, its energy gap can be controlled in a range from 0.6 eV to 2.5 eV, which corresponds to the classical semiconductor Ge (0.66 eV), Si (1.10 eV), GaAs (1.43 eV), and GaP (2.25 eV). This fact indicates that it would be a suitable system to investigate the compositional dependence of the atomic and electronic properties in the random network of solids. In spite of these significant advantages in the Si-As-Te amorphous system, a big barrier impending the wide utilization of this material is the huge difficulty encountered in the material preparation which results from large differences in the weight density, melting point, and vapor pressure of individual elements used for the alloying composition. The objective of the FMPT/M13 experiment is to fabricate homogeneous multi-component amorphous semiconductors in the microgravity environment of space, and to make a series of comparative characterizations of the amorphous structures and their basic physical constants on the materials prepared both in space and in normal terrestrial gravity.

Hamakawa, Yoshihiro↗
NASA NTRS1998

Directional Solidification and Characterization of Hg(0.89) Mn(0.11)Te

Two boules of Hg(0.89)Mn(0.11)Te(MMT) were solidified using the vertical Bridgman-Stockbarger method. Translation rates of 0.09 and 0. 18 microns/s were used. The influence of growth rate on axial compositional homogeneity in the MMT boules was evaluated experimentally by conducting precision density measurements on radial slices taken from each boule. In addition, Plane Front Solidification theory and segregation coefficient (k) data for the Hg(1-x)Mn(x)Te system were used to fit theoretical composition profiles to the measured MMT axial composition profiles. The strong correlation between the measured and calculated MMT axial composition profiles indicates diffusion dominated axial solute redistribution in the boules under the applied growth conditions. The analysis of the MMT axial composition profiles by Plane Front Solidification theory allowed the calculation of the effective diffusion coefficient (D(eff) = 3.5 x l0(exp -5) sq cm/s). The k-values for the Hg(1-x)Mn(x)Te system and the D(sub eff) - value were then used to verify that both boules were solidified under conditions which did not exceed the Constitutional Supercooling Criteria under ideal conditions. Finally, a preliminary examination of the radial compositional variation in each MMT was made using Fourier Transform Infra-Red Spectroscopy (FTIR). The radial homogeneity in the MMT boules was found to be comparable for both translation rates.

Price, M. W.↗
NASA NTRS1999

Determination of the Solid/Liquid Interface Shape and Resultant Radial Homogeneity in Directionally Solidified Hg(0.89)Mn(0.11)Te

Directional solidification and interrupted directional solidification experiments were used to determine tile shape of the solid/liquid interface and the resultant radial homogeneity in Hg(0.89)Mg(0.11)Te. For directionally solidified samples solidified at a rate of 0.09 microns/sec in a thermal gradient of 83 C/cm, a maximum of 0.006 molar percent MnTe radial variation across the Hg0.89)Mn(0.11)Te boules at specific locations was determined using an FTIR technique. This FTIR evaluation of the radial homogeneity also indicated an asymmetrical, convex interface shape during solidification. The asymmetrical, convex shape of the growth interface was confirmed by interrupted directional solidification experiments. These were performed under the same growth conditions as the normally completed directional solidification experiments except that the samples were quenched before the final growth transient was reached. In these experiments, etching and scanning X-ray fluorescence were used to reveal the shape of the solid/liquid interface. Microprobe analysis of composition gradients across the interface was used to confirm the authors' previous work in evaluating the segregation coefficient of Hg(0.89)Mn(0.11)Te alloy. Microprobe analysis of the interface region of the interrupted growth sample revealed a dendritic structure containing secondary and tertiary dendritic arms.

Price, M. W.↗
NASA NTRS2000

BOREAS TE-5 CO2 Concentration and Stable Isotope Composition

The BOREAS TE-5 team collected measurements in the NSA and SSA on gas exchange, gas composition, and tree growth. This data set contains measurements of the concentration and stable carbon (C-13/C-12 and oxygen (O-18/O-16) isotope ratios of atmospheric CO2 in air samples collected at different heights within forest canopies. The data were collected to determine the influence of photosynthesis and respiration by the forest ecosystems on the concentration and stable isotope ratio of atmospheric CO2 These measurements were collected at the SSA during each 1994 IFC at OJP, OBS, and OA sites. Measurements were also collected at the NSA during each 1994 IFC at the OJP, T6R5S TE UBS, and T2Q6A TE OA sites. The stable isotope ratios are expressed using standard delta notation and in units of per mil. The isotope ratios are expressed relative to the international standard, PDB, for both carbon and oxygen samples. The data are stored in tabular ASCII files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Activity Archive Center (DAAC).

Hall, Forrest G.↗
NASA NTRS2000

BOREAS TE-7 Dendrology Data

The BOREAS TE-7 team collected data sets in support of its efforts to characterize and interpret information on the sapflow and dendrology of boreal vegetation. This data set contains dendrology measurements, consisting of tree ring width and density taken at several points within each ring,.Measurements were taken near the TE towers at the OJP and OBS sites in NSA. In the SSA, measurements were taken near the TE towers at the MIX, OBS, and OJP sites; at the AIM- 1 3 and BMH-9 sites; and near the TF-YJP site. All data were collected during the summer of 1994. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Active Archive Center (DAAC).

Hall, Forrest G.↗
NASA NTRS2004

Density, Electrical Conductivity and Viscosity of Hg(sub 0.8)Cd(sub 0.2)Te Melt

The density, viscosity, and electrical conductivity of Hg(sub 0.8)Cd(sub 0.2)Te melt were measures as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(sub 0.8)Cd(sub 0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(sub 0.8)Cd(sub 0.2)Te melt as the temperature was decreased to below 1090 K.

Li, C.↗
NASA NTRS2004

Density, Electrical Conductivity and Viscosity of Hg(0.8)Cd(0.2)Te Melt

The density, viscosity, and electrical conductivity of Hg(0.8)Cd(0.2)Te melt were measured as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(0.8)Cd(0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(0.8)Cd(0.2)Te melt as the temperature was decreased to below 1090 K

Li, C.↗
NASA NTRS2004

Thermophysical Properties and Structural Transition of Hg(0.8)Cd(0.2)Te Melt

Thermophysical properties, namely, density, viscosity, and electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt were measured as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were simultaneously determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(sub 0.8)Cd(0.2)Te melt as the temperature was decreased from 1090 K to the liquidus temperature.

Li, C.↗
NASA NTRS1981

Defect chemistry and characterization of (Hg, Cd)Te

Single crystal samples of phosphorus doped Hg sub 0.8 Cd sub 0.2 Te were anneald at temperatures varying from 450 C to 600 C in various Hg atmospheres. The samples were quenched to room temperature from the annealing temperatures. Hall effect and mobility measurements were performed at 77 K on all these samples. The results indicate the crystals to be p type for a total phosphorus concentration of 10 to the 19th power/cu cm in all the samples. The hole concentration at 77 K increases with increasing Hg pressures at 450 C and 500 C contrary to the observation in undoped crystals. Also, at low Hg pressures the concentration of holes in the phosphorus doped crystals is lower than in the undoped crystals. The hole concentration in all the samples is lower than the intrinsic carrier concentration at the annealing temperatures. The hole mobility in the doped crystals is similar to that in the undoped crystals. A defect model according to which phosphorus behaves as a single acceptor interstitially, occupying Te lattice sites while it acts as a single donor occupying Hg lattice sites was established. Equilibrum constants established for the incorporation of all the phosphorus species explain the experimental results

Vydyanath, H. R.↗
NASA NTRS1982

Defect chemistry and characterization of Hg sub 1x Cd sub x Te

Single crystal samples of undoped and doped Hg sub 1-x Cd sub x Te were annealed at varying temperatures and partial pressures of Hg. Hall effect and mobility measurements were carried out on these samples after quenching to room temperature. Based on the variation of the carrier concentration and the carrier mobility as a function of the partial pressure of Hg temperature, and dopant concentration, defect models were established for the doped and the undoped crystals. These models indicate that the native acceptor defects in both Hg0.8Cd0.2Te and Hg0.6Cd0.4Te doubly ionized and the native donor defects are negligible in concentration, implying that p to n conversion in these alloys occurs due only to residual donors. Incorporation mechanism of copper, indium, iodine, and phosphorus were investigated. A large concentration of indium is found to be paired with the native acceptor defects. Results on crystals doped with phosphorus indicate that phosphorus behaves amphoterically, acting as a donor on Hg lattice sites and as an acceptor intersitially on Te lattice sites. A majority of the phosphorus is found to be present as neutral species formed from the pairing reaction between phosphorus on Hg lattice sites and phosphorus in interstitial sites. Equilibrium constants for the intrinsic excitation reaction, as well as for the incorporation of the different dopants and the native acceptor defects were established.

Vydyanath, H. R.↗
NASA NTRS1983

Density of liquid Hg(1-x)Cd(x)Te

Negative thermal expansion has been established in liquid Hg(1-x)Cd(x)Te for x less than 0.2 employing a pycnometric method. Pure HgTe increases in density from its melting point at 670 C to a maximum value at 750 C, where normal thermal expansion progressively resumes. The dependence of density on temperature for liquid Hg(1-x)Cd(x)Te arises almost exclusively from the HgTe portion of the melt, while CdTe acts as a diluent. The temperature corresponding to the maximum density changes slightly with composition, increasing by about 5 C for x = 0.1.

Chandra, D.↗
NASA NTRS1983

Liquidus temperatures of Hg-rich Hg-Cd-Te alloys

Measurements are made of the liquidus temperatures for ten (Hg/1-x/Cd)Te/1-y/ compositions in which x ranges from 0.091 to 0.401 and y ranges from 0.544 to 0.952. It is found that for metal-rich melts with the same x value, the liquidus temperature increases with y when y is in the range 0.5-0.7. This behavior is explained by the higher degree of association between Cd and Te than between Hg and Te in the melts. It is noted that recent calculated values of the liquidus isotherms by Tung et al. (1982) are in fair to good agreement with the experimental results obtained here.

Szofran, F. R.↗
NASA NTRS1984

Theory of high-harmonic rectangular gyrotron for TE(mn) modes

In this paper, the linearized relativistic Vlasov equation is solved and a dispersion relation is calculated for the interaction between a relativistic electron beam and the electromagnetic fields of a rectangular waveguide supporting TE(mn) modes. The dispersion relation is simplified to the special case of a frame of reference moving with the electrons and the resulting coupling coefficient epsilon(mn)super l is calculated for various TE(mn) modes. The dependence of epsilon(mn)super l on the parity of the harmonic number l and various mn modes of the waveguide are discussed.

Ferendeci, A. M.↗
NASA NTRS1983

Development of ion-implantation confined, shallow mesa stripe (Pn,Sn)Te/Pb(Te,Se) DH laser diodes

Preliminary results of a program to develop ion implantation confined, shallow mesa stripe (Pb,Sn)Te laser diodes are presented. The practicality of using a shallow mesa stripe to produce single mode laser output and to increase the single mode tuning range are demonstrated. The first results of p-type ion implantation in the lead-tin salts are also reported. It is shown that sodium and lithium both can be used to convert n-type Pb(Te,Se) to p-type. The implant and anneal procedures are described, and electrical characteristics of Li-implanted layers are presented.

Fonstad, C. G.↗
NASA NTRS1984

Solar cycle effects upon the relationship of Ne and Te in the F-region

Data from the Atmospheric Explorer-C recorded during the rise in solar activity from 1975 to 1978, and Dynamic Explorer-2 data recorded at solar maximum are used to examine how the relation between electron temperature and density in the F-region of the ionosphere is altered by solar activity. It is found that the solar maximum temperature Te is a factor of two larger than the solar minimum Te for the same values of electron density. Temperature does not necessarily increase in response to solar activity because electron density increases enough to approximately cancel the effect of higher solar extreme ultraviolet heating. The effect of solar activity is accounted for by a simple function of the F (10.7 cm) index which multiplies the solar minimum equation from a previous study (Brace and Theis, 1978).

Brace, L. H.↗
NASA NTRS1987

Investigation of temperature and concentration oscillations in the directional solidification of Pb-Sn-Te

Directional solidification of the pseudobinary compound semiconductor material Pb sub 1-x Sn sub x Te by the Bridgman crystal growth process will be studied. Natural convection in the molten sample will be visualized with a novel electrochemical cell technique that employs the solid electrolyte material yttria-stabilized zirconia. Mass transfer by both diffusion and convection will be measured by detecting the motion of oxygen tracer in the liquid. Additional applications for electrochemical cells in semiconductor crystal growth are suggested. Unsteady convection in the melt will also be detected by the appearance of temperature oscillations. The purpose of this study is to experimentally characterize the overstable conditions for a Pb sub 1-x Sn sub x Te melt in the vertical Bridgman crystal growth technique and use a linear analysis to predict the onset of convection for this system.

Anderson, T. J.↗
NASA NTRS1986

The heat of formation of Mercury vacancies in Hg(0.8)Cd(0.2)Te

A modified mass loss measurement technique has been employed for the first time for the direct in situ determination of vacancy concentrations in Hg(0.8)Cd(0.2)Te at elevated temperatures. This technique can also be used to establish the pressure-temperature phase diagram for this type of system. The derived mean value for the heat of formation of mercury vacancies in the above alloy is 0.43 eV. Theoretical considerations concerning the vacancy formation in HgTe and in Hg(0.8)Cd(0.2)Te are in qualitative agreement with the experimental value.

Wiedemeier, H.↗