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DOE OSTI2020

Materials Data on Ta2Bi2O9 by Materials Project

Bi2Ta2O9 crystallizes in the triclinic P-1 space group. The structure is two-dimensional and consists of one BiO2 sheet oriented in the (0, 0, 1) direction and one Ta2O5 sheet oriented in the (0, 0, 1) direction. In the BiO2 sheet, Bi4+ is bonded in a 8-coordinate geometry to eight O2- atoms. There are a spread of Bi–O bond distances ranging from 2.30–2.87 Å. There are two inequivalent O2- sites. In the first O2- site, O2- is bonded in a 4-coordinate geometry to four equivalent Bi4+ atoms. In the second O2- site, O2- is bonded to four equivalent Bi4+ atoms to form a mixture of edge and corner-sharing OBi4 tetrahedra. In the Ta2O5 sheet, Ta5+ is bonded to five O2- atoms to form distorted corner-sharing TaO5 trigonal bipyramids. There is one shorter (1.90 Å) and four longer (1.94 Å) Ta–O bond length. There are two inequivalent O2- sites. In the first O2- site, O2- is bonded in a linear geometry to two equivalent Ta5+ atoms. In the second O2- site, O2- is bonded in a bent 150 degrees geometry to two equivalent Ta5+ atoms.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Photonic near infrared heater

A multilayer photonic stack comprising a lower plurality of alternating layers comprising at least A and B and an upper plurality of alternating layers comprising at least C and D, layer A comprises at least one of Al, Au, W, Ag, Ni, Ti, Pt, and Cr, layer B comprises at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO), and layers C and D comprise at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO).

Prasher, Ravi Shankar↗

DOE OSTI2025

Comparison of Nb and Ta Pentoxide Loss Tangents for Superconducting Quantum Devices

Superconducting transmon qubits are commonly made with thin-film Nb wiring, but recent studies have shown increased performance with Ta wiring. In this work, we compare the resonator-induced single photon, millikelvin dielectric loss for pentoxides of Nb (Nb2O5) and Ta (Ta2O5) in order to further understand limiting losses in qubits. Nb and Ta pentoxides of three thicknesses are deposited via pulsed laser deposition onto identical coplanar waveguide resonators. The two-level system (TLS) loss in Nb2O5 is determined to be about 30% higher than that of Ta2O5. This work indicates that qubits with Nb wiring are affected by higher loss arising from the native pentoxide itself, likely in addition to the presence of suboxides, which are largely absent in Ta.

Goronzy, D. P. [Northwestern U.]↗

DOE OSTI2023

Targeting Oxide Concentration in Tantalum Oxide-Fluoride Anions

The design of both molecular and non-molecular solid materials with specific properties fundamentally relies on the controlled synthesis of crystals with desired functional groups, bonding motifs, polarity, chirality, and more. To this end, fluoride and oxide-fluoride anions have been utilized as basic building units (BBUs) in the synthesis of noncentrosymmetric racemic materials for their ability to create polar axes that facilitate the breaking of an inversion center as demonstrated in a series of compounds with [MF6]2- anions (M = Ti, Zr, Hf). Targeting an analog with a [TaOF5]2- anion, the phase space of (CuO, Ta2O5)/bpy/HF(aq)/H2O (bpy = 2,2′-bipyridine) was investigated and three new compounds with Cu-bpy cations and Ta-fluoride or Ta-oxyfluoride anions were synthesized: [Cu(bpy)2][TaF6], [Cu(bpy)2][Ta2OF10], and [Cu(bpy)F(H2O)2]2[TaF7]∙H2O with the anions [TaF6]-, [Ta2OF10]2-, and [TaF7]2-, respectively. The formation of these anions was found to be a product of both the concentration of hydrofluoric acid in solution and the ratio of metal-oxide starting materials to ligand. This work contributes to the understanding of mixed anion formation in the solid state.

Kamp, Kendall R.↗

DOE OSTI2024

Trace Element Control in Master Alloys and Impact of Feedstock Purity on a Ta-containing Steel during Electroslag Remelting

Advanced materials design often leads to new complex compositions that can bring challenges to manufacturing processes. Melt processing of a novel alloy with a tight chemistry range revealed a 25% Ta loss after manufacturing. Vacuum induction melting (VIM) and electroslag remelting (ESR) were performed using industry practices at a laboratory scale and the loss occurred from the VIM electrode to the ESR ingot. Several tools were used for characterization, including combustion analysis, scanning electron microscopy, and electron probe microanalysis for observation of the precipitate and inclusion phases. Additionally, computational modeling of the ESR process was performed to predict macrosegregation and inclusion travel. It was found that a significant amount of Ta2O5 inclusions formed during VIM and were transferred to the slag during ESR. This led to a 95% decrease in density of inclusions explaining to Ta loss. Pathways to better control advanced alloy chemistries during melt processing will be discussed.

Detrois, Martin↗

DOE OSTI2025

Chemical Analysis of Tantalum Thin Films compared to Niobium Thin Films using SIMS and XPS

Superconducting qubits are a leading platform for quantum computation. These circuits are typically made from superconducting materials like aluminum or niobium. However, the amorphous niobium oxide and aluminum oxide on the surface of these circuits introduce considerable RF loss due to the presence of two-level systems (TLS), which limits the maximum coherence times T1 to ~100 μs. Capping the niobium qubits with a tantalum layer leads to a 3- 5x improvement [Bal et al., 2024]. But even in this case, tantalum forms an amorphous surface oxide that introduces loss. In an effort to devise strategies to eliminate the presence of this oxide, we present a comprehensive study on the nature of Ta oxide using x-ray photoemission spectroscopy (XPS) and secondary ion mass spectrometry (ToF-SIMS) as a function of heat treatment. The thin films were annealed in ultra-high vacuum conditions and analyzed in situ to characterize the composition and evolution of the native tantalum oxide layer and oxide-metal interface. Our analysis reveals two critical differences between tantalum and niobium oxides: Nb2O5 completely dissolves at 400°C, while Ta2O5 persists even at 800°C. Additionally, tantalum oxide contains only a single suboxide (TaO), in contrast to niobium's two suboxides (NbO and NbO2). The suboxide of tantalum contributes minimally to the total oxide content and shows a relative increase with temperature. Understanding the oxide’s behavior will open new pathways for optimizing coherence times in tantalum qubits.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2022

Synthesis and Ultrahigh Pressure Compression of High-Entropy Boride (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 to 220 GPa

The high-entropy boride (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 material was synthesized under high-pressures and high-temperatures in a large-volume Paris-Edinburgh (PE) press from a ball-milled powder mix of HfO2, MoO3, Nb2O5, Ta2O5, ZrO2, carbon black, and boron carbide. The transformation process was monitored in situ by energy-dispersive x-ray diffraction with conversion starting at 1100 °C and completed by 2000 °C with the formation of a single hexagonal AlB2-type phase. The synthesized sample was recovered, powdered, and mixed with platinum pressure marker and studied under high pressure by angle-dispersive x-ray diffraction in a diamond anvil cell. The hexagonal AlB2-type phase of (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 was found to be stable up to the highest pressure of 220 GPa reached in this study (volume compression V/V0 = 0.70). The third order Birch-Murnaghan equation of state fit to the high-pressure data up to 220 GPa results in an ambient pressure unit cell volume V0=28.16±0.04 Å3, bulk modulusKo = 407 ± 6 GPa, pressure derivative of bulk-modulus K0′ = 2.73 ± 0.045 GPa. Our study indicates that this high-entropy boride (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 material is stable to ultrahigh pressures and temperatures and exhibit high bulk modulus similar to other incompressible transition metal borides like ReB2 and Os2B3.

36 MATERIALS SCIENCE↗

NASA NTRS1975

Application of the MOS-C-V technique to determine impurity concentrations and surface parameters on the diffused face of silicon solar cells

The feasibility of using the MOS C-V technique to obtain information regarding impurity and surface state concentrations on the diffused face of silicon solar cells with Ta2O5 coatings is studied. Results indicate that the MOS C-V technique yields useful information concerning surface parameters which contribute to the high, efficiency limiting, surface recombination velocities on the n+ surface of silicon solar cells.

Weinberg, I.↗

NASA NTRS1975

Application of the MOS C-V technique to determine impurity concentrations and surface parameters on the diffused face of silicon solar cells

An experimental and theoretical investigation of the feasibility of using the MOS C-V (capacitance-voltage) technique to determine impurity and surface state concentrations on the diffused face of Si solar cells with Ta2O5 coatings. Impurity concentration 10 A from the diffused surface is found to be 2.9 times 10 to the 20th power per cu cm. Charge density in surface and oxide states is 2.1 times 10 to the 13th power per sq cm. These data agree with theoretical predictions.-

Weinberg, I.↗

NASA NTRS1975

Practical anti-reflection coating for metal semiconductor solar cells

The metal-semiconductor solar cell is a possible candidate for converting solar to electrical energy for terrestrial application. A method is given for obtaining optical parameters of practical antireflection coatings for the metal-semiconductor solar cell. This method utilizes the measured refractive index obtained from ellipsometry since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculation of optical parameters for Ta2O5 antireflection coatings on Au-GaAs and Au-GaAs(0.78)P(0.22) solar cells are presented for comparison.

Yeh, Y.-C. M.↗

NASA NTRS1976

Practical antireflection coatings for metal-semiconductor solar cells

The metal-semiconductor solar cell is a potential candidate for converting solar energy to electrical energy for space and terrestrial application. In this paper, a method for obtaining parameters of practical antireflection (AR) coatings for the metal-semiconductor solar cells is given. This method utilizes the measured equivalent index of refraction obtained from ellipsometry, since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculations of optical parameters for Ta2O5 AR coatings on Au-GaAs and Au-GaAs(0.78)P(0.22) solar cells are presented for comparison.

Yeh, Y. C. M.↗

NASA NTRS1977

Mechanism of beneficial effect of tantalum in hot corrosion of nickel-base superalloys

X-ray diffraction and electron microprobe analyses were used to examine a prominent NaTaO3 pattern formed in a number of nickel-base superalloys. It is found that a beneficial effect of tantalum with respect to hot corrosion attack arises from the ability of Ta2O5 to tie up Na2O and prevent the formation of a molten Na2MoO4 phase.

Fryburg, G. C.↗

NASA NTRS1978

Evaluation of glass resin coatings for solar cell applications

Using a variety of non-vacuum deposition techniques coatings were implemented on silicon solar cells and arrays of cells interconnected on Kapton substrates. The coatings provide both antireflection optical matching and environmental protection. Reflectance minima near 2% was achieved at a single wavelength in the visible. Reflectance averaging below 5% across the useful collection range was demonstrated. The coatings and methods of deposition were: (1) Ta2O5 spun, dipped or sprayed; (2) Ta2O5.SiO2 spun, dipped or sprayed; (3) GR908 (SiO2) spun, dipped, or sprayed. Total coating thickness were in the range of 18 microns to 25 microns. The coatings and processes are compatible with single cells or cells mounted on Kapton substrates.

Field, M. B.↗

NASA NTRS1977

Phase equilibria and crystal chemistry of rubidium niobates and rubidium tantalates

The phase equilibria relations and crystal chemistry of portions of the Rb2O-Nb2O5 and Rb2O-Ta2O5 systems were investigated for structures potentially useful as ionic conductors. A hexagonal tungsten bronze-type (HTB) structure was found in both systems as well as three hexagonal phases with mixed HTB-pyrochlore type structures. Ion exchange experiments between various alkali ions are described for several phases. Unit cell dimensions and X-ray diffraction powder patterns are reported.

Minor, D. B.↗

NASA NTRS1981

On the cause of the flat spot phenomenon observed in silicon solar cells at low temperatures and low intensities

The results of an effort to determine the mechanisms involved in the flat spot (FS) effect are given. It is suggested that the FS effect is due to a resistive metal-semiconductor-like (MSL) interface in parallel with the cell PN junction. Regions responsible for the FS effect lie under the front surface metallization in these cells, where the PN junction has been destroyed and replaced with a metal silicide-semiconductor interface. Such structural changes, which appear to be due to the thermally activated dissolution of the silicon, have been induced in cells as a result of isochronal heat treatments at temperatures between 450 C and 560 C. It has been found that a 650 A layer of Ta2O5 evaporated over the metallization is sufficient to prevent the underlying silicon from pitting during the subsequent heat treatment, although pitting at the metal silicon ambient interface could still be observed.

Weizer, V. G.↗

NASA NTRS1985

Oxidation Behavior of Glassy Alloys

The oxidation behavior of high temperature glassy alloys produced by rapid solidification processing is investigated and the effects of processing and composition on oxidation behavior is studied. Glassy Ta-44.5at%Ir, Ta-40at%Ir-10at%B and Nb-45at%Ir oxidized rapidly at 700 to 800 C at an oxygen partial pressure of .001 atm. The alloys were embrittled during the oxidation process. No apparent oxidation or embrittlement of the Ta-Ir alloy occurred after oxidation for 4h at 500 C at an oxygen partial pressure of .001 atm. Embrittlement occurred, however, after 100h of exposure under the latter conditions. Alloy embrittlement is associated with the partial or full conversion of the metallic glass to a mixture of crystalline beta-Ta2O5 and metallic iridium. Hot compaction of glassy alloys of this type must be limited to relatively low temperatures (approx. 500 C) and short times at the low temperatures unless extremely low oxygen partial pressures can be achieved during the compaction process.

Yurek, G.↗

NASA NTRS1987

A sputtering derived atomic oxygen source for studying fast atom reactions

A technique for the generation of fast atomic oxygen was developed. These atoms are created by ion beam sputtering from metal oxide surfaces. Mass resolved ion beams at energies up to 60 KeV are produced for this purpose using a 150 cm isotope separator. Studies have shown that particles sputtered with 40 KeV Ar(+) on Ta2O5 were dominantly neutral and exclusively atomic. The atomic oxygen also resided exclusively in its 3P ground state. The translational energy distribution for these atoms peaked at ca 7 eV (the metal-oxygen bond energy). Additional measurements on V2O5 yielded a bimodal distribution with the lower energy peak at ca 5 eV coinciding reasonably well with the metal-oxygen bond energy. The 7 eV source was used to investigate fast oxygen atom reactions with the 2-butene stereoisomers. Relative excitation functions for H-abstraction and pi-bond reaction were measured with trans-2-butene. The abstraction channel, although of minor relative importance at thermal energy, becomes comparable to the addition channel at 0.9 eV and dominates the high-energy regime. Structural effects on the specific channels were also found to be important at high energy.

Ferrieri, Richard A.↗

NASA NTRS1989

Metal-silicon reaction rates - The effects of capping

Evidence is presented showing that the presence of the commonly used anti-reflection coating material Ta2O5 on the free surface of contact metallization can either suppress or enhance, depending on the system, the interaction that takes place at elevated temperatures between the metallization and the underlying Si. The cap layer is shown to suppress both the generation and annihilation of vacancies at the free surface of the metal which are necessary to support metal-Si interactons. Evidence is also presented indicating that the mechanical condition of the free metal surface has a significant effect on the metal-silicon reaction rate.

Weizer, Victor G.↗