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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

First evaluation of the tracking performance of the ARCADIA Fully Depleted MAPS with 120 GeV proton beam

This work presents test beam characterization of the ARCADIA Main Demonstrator 3, a 200 $μ$m thick Fully Depleted MAPS developed using a custom LFoundry 110 nm CIS process on a high-resistivity substrate. Measurements using a 120 GeV proton beam demonstrate a detection efficiency exceeding 99% and a spatial resolution down to 3.8 $μ$m. The study evaluates cluster size, spatial resolution, and efficiency as a function of the threshold, front-end currents, and backside bias voltage.

Rignanese, M. [Padua U.; INFN, Padua]↗
DOE OSTI2026

Empirical scaling of the L–H threshold power for metal wall tokamaks using a multi-device database

The empirical scaling for the H-mode power threshold in tokamaks has been revisited using a database with threshold data from machines with a metallic first wall as part of International Tokamak Physics Activity (ITPA) task TC-26. The database contains discharges from ASDEX Upgrade (AUG) (W), JET (Be/W) and Alcator C-Mod (Mo). This was motivated by reports that in like-for-like discharges the power threshold was reduced by approximately 30% after the change from carbon based to metallic first wall materials on AUG (Ryter et al 2013 Nucl. Fusion 53 113003) and JET (Maggi et al 2014 Nucl. Fusion 54 023007). The database contains L–H transition data for all hydrogen isotopes and mixtures, including T and DT from the recent JET campaigns. Compared to the ITPA 2008 scaling (Martin et al 2008 J. Phys.: Conf. Ser. 123 012033), the metal wall scaling has a smaller magnetic field exponent but a larger density exponent. We present an additional parameter to capture the strong dependence of the L–H power threshold (approx. factor 2) on the magnetic configuration in the divertor on JET. The scaling recovers the approximate inverse isotope mass scaling of the threshold power. Alternative scalings involving the plasma current and poloidal magnetic field are explored. Despite the reduction in threshold observed earlier, the scalings based on the metal wall database do not necessarily extrapolate to a lower threshold for ITER compared to the ITPA 2008 scaling, especially at high density. The divertor configuration effect induces the largest uncertainty in the extrapolation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Key metrics of progress in the NIF ignition implosions and future challenges on the path to higher yields

Successful demonstration of an implosion that meets the physics metrics for ignition on the National Ignition Facility (NIF) in August 2021 and demonstration of target energy gain G > 1 in December 2022 represented the culmination of more than a decade of research on the NIF. An in-depth analysis of the key ignition metrics achieved on the NIF over the past decade shows sustained progress toward identifying and mitigating degradation effects. Ignition implosions on the NIF have progressed from early experiments whose compressed fuel conditions were degraded by a factor of 10–20 below the ignition threshold with yields of only 1%–2% of the laser energy, to current experiments that significantly exceed the ignition threshold and in the best experiments achieve yields greater than twice the laser energy. It is very likely that NIF can get more than 20 MJ of yield and possibly 50–70 MJ yields when fully optimized at an ultraviolet laser energy of 2.6 MJ following the completion of the NIF Extended Yield Capability Project. Achieving these higher yields will also require improvements to capsules at larger size and possibly with alternate materials, as well as an improved understanding of hohlraum and capsule physics. Now that NIF has achieved ignition, the design of a Next Generation High Energy Density Facility that could achieve the National Nuclear Security Administration long-term goal of substantially higher yields than the NIF can proceed with a more confident physics base. We evaluate these opportunities including possible applications for inertial fusion energy and likely challenges to achieving this level of performance over the next decade.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Simulation study for particle identification with the dRICH of the ePIC experiment at the EIC

The dual-radiator Imaging Cherenkov detector (dRICH), employing an aerogel and a gas radiator, is a key component of the forward particle identification system for the ePIC experiment at the Electron-Ion Collider (EIC). This study evaluates the dRICH performance using Geant4 simulations in the context of the global ePIC simulation stack, focusing on the optimization of the aerogel radiator and the impact of sensor noise. We compare two aerogel configurations: the initial design (n = 1.019) and the current default (n = 1.026). The latter, characterized by improved optical properties and a higher refractive index, demonstrates enhanced π/K separation at high momenta, effectively extending the operational overlap with the C 2 F 6 gas radiator (n = 1.00076 at 25 °C, as implemented in the simulation software). Additionally, the study investigates the impact of Silicon Photomultiplier (SiPM) dark noise, showing that a 300 kHz noise rate per 3mm x 3mm channel leads to a moderate reduction (approximately 1.5 GeV/c) in the 3σ separation threshold. These results validate the current dRICH design and quantify the purity levels achievable for both radiators under expected experimental conditions.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2026

Small-Signal Stability of Grid-Forming Converters Under Fault Conditions

Threshold virtual impedance (TVI)-based current limiting for grid-forming converters (GFMs) has gained great interest due to its ability to maintain voltage source behaviour during faults. However, sequence component extraction (SCE) and negative-sequence control (NSC) are often overlooked in small-signal stability assessments during faults. This paper develops small-signal sequence impedance models for GFMs under four well-known SCE methods based on TVI current limiting control during symmetrical fault conditions. Using the developed impedance models, the impacts of SCE and NSC, and the voltage and current control loop bandwidths, on system stability during faults are investigated. Additionally, since negative-sequence TVI (TVI-) is typically added along with its positive-sequence counterpart, which is often inductive, inductive and resistive TVI- are examined. The findings suggest that a higher voltage or current control loop bandwidth has a negative impact on system stability, while SCE and NSC largely reduce the stable range for voltage and current control loop bandwidth during faults, and that the severity of such impacts is determined by the particular SCE method. Furthermore, it is observed that inductive TVI- significantly degrades system stability, while resistive TVI- can enhance stability when suitable SCE methods are appropriately selected and designed. Matlab/Simulink electromagnetic transient simulations validate these analytical results.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

Nonlinear electrical transport near the metal–insulator transition in V 4 O 7 thin films

Nonlinear electrical transport associated with correlated electronic states has been widely investigated in transition-metal oxides near metal–insulator transitions. Here, in this study, we investigate nonlinear transport and threshold switching in sputter-deposited V 4 O 7 thin films grown on fused silica substrates. Temperature-dependent transport measurements show a metal–insulator transition near 240 K with negligible thermal hysteresis, defining the temperature scale that governs the nonlinear electrical response. Current–voltage measurements reveal reproducible bipolar threshold switching over a broad temperature range, with the threshold voltage decreasing systematically as the transition temperature is approached. Electrothermal finite-element simulations reproduce the measured switching characteristics and show that switching occurs when localized Joule heating drives a confined region of the device toward the transition temperature. The simulated peak local temperature at threshold lies close to the intrinsic metal–insulator transition temperature of V 4 O 7 , establishing that the nonlinear electrical response originates from electrothermal feedback acting on the strongly temperature-dependent conductivity near the transition. These results identify V 4 O 7 thin films as a model correlated-oxide system in which volatile threshold switching emerges from proximity to an extended metal–insulator transition.

25 ENERGY STORAGE↗
DOE OSTI2026

Spray-Coated Silver as Backside Metal for III–V Photovoltaic Devices on GaAs and Ge Substrates

The accelerated increase in demand for III-V space photovoltaics on GaAs and Ge substrates, as well as growing interests in terrestrial applications, motivate the development of cost-effective, high-throughput processing routes of these materials. Here, in this study, we assess spray-coated silver (Ag) back contact metallization as a substitute for electron-beam-evaporated metals currently used in industry. We find that the spray-coated Ag films are dense and continuous. By means of quantum efficiency, dark current-voltage, and illuminated current-voltage characterizations, we show that spray-coated GaAs and Ge solar cells perform similarly to baseline devices with electroplated Au, including under high current densities. We estimate that the thresholds for specific contact resistance below which back contacts do not significantly contribute to resistive loss are 2.1 x 10 -1 Ω•cm 2 for GaAs and 4.7 x 10 -2 Ω•cm 2 for Ge. We experimentally confirm that our spray-coated samples meet these requirements. Peel tests show that the adhesion of plain spray-coated Ag films to the back of p-type Ge substrates used in III-V solar cells is currently insufficient, whereas adhesion to p-type GaAs substrates is outstanding and requires no further optimization.

14 SOLAR ENERGY↗
DOE OSTI2025

Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with V th < -6 V and High on-Current

In this work, a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) is demonstrated that operates in an Accumulation Channel rather than a Transfer Doping regime. The FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated Al 2 O 3 is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for the formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of Al 2 O 3 . Completed devices with gate/channel length of 1 µm demonstrate record threshold voltage < -6 V with on-current > 80 mA mm -1 . Carrier density and mobility figures extracted by CV analysis indicate a high 2D charge density of ≈ 2 × 10 12 cm -2 and increased hole mobility of 110 cm 2 V -1 s -1 in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a powerful new strategy to greatly improve carrier mobility and enable enhanced high power and high frequency diamond transistor performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Climatic and Socioeconomic Drivers of Water Use and Their Spatio‐Temporal Patterns for Small and Mid‐Sized Cities in the Contiguous United States

This study explores the drivers of urban water use and their spatial-temporal patterns in 142 small and mid-sized cities across the Contiguous United States (CONUS) by analyzing the data directly collected from these cities and using advanced machine learning techniques. We identify five distinguished clusters across CONUS, each showing unique trends of the impact of drivers on water use. We find that socioeconomic factors significantly influence water use in eastern and southwestern cities, while climatic variables such as precipitation and temperature range dominate in central and northwestern regions. Temporal analysis reveals the impacts of major socioeconomic and climatic disruptions on urban water use in the period 2011–2021, including the COVID lockdown, the rapid growth of data centers, and the drought of 2012. In addition, our analysis suggests that economic growth in small and mid-sized US cities continues to be accompanied by rising water use, contrasting with the opposite trend observed in large cities in prior studies. This implies that as smaller cities develop, their water use may increase above current levels until incomes reach a higher threshold, highlighting the need to improve water use efficiency. This study also presents useful insights for developing effective water demand management strategies in response to climatic variability and socioeconomic growth in small and mid-sized cities.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2024

Tearing Stable Stationary ITER Baseline Operation in DIII-D

We present a tearing stable, stationary and reproducible operating solution for DIII-D plasmas characterized by the ITER Baseline Scenario normalized parameter set and shape. In these plasmas low differential rotation (Δf1,2) between the core and edge is identified as the single root cause of the onset of the primary limiting instability, the 2,1 Neoclassical Tearing Mode (NTM), while a group of other examined parameters have a much weaker impact on the stability. Explanation is offered by drift kinetic simulations, which show a six-fold reduction in the NTM onset threshold due to diminished stabilizing ion polarization currents when the seed island drift frequency ceases in the local plasma frame. Based on the experimental observation and the explanation provided by the theory, a new method is developed to sustain Δf1,2 by modifying the edge neoclassical potential through neutral gas fueling. This method enables stationary ITER baseline operation free of disruptive 2,1 tearing modes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

The CMS Phase-2 Fast Beam Condition Monitor prototype test with beam

The Fast Beam Condition Monitor (FBCM) is a standalone luminometer for the High Luminosity LHC (HL-LHC) program of the CMS Experiment at CERN. The detector is under development and features a new, radiation-hard, front-end application-specific integrated circuit (ASIC) designed for beam monitoring applications. The achieved timing resolution of a few nanoseconds enables the measurement of both the luminosity and the beam-induced background. The ASIC, called FBCM23, features six channels with adjustable shaping times, enabling in-field fine-tuning. Each ASIC channel outputs a single binary asynchronous signal encoding time-of-arrival and time-over-threshold information. The FBCM is based on silicon-pad sensors, with two sensor designs presently being considered. This paper presents the results of tests of the FBCM detector prototype using both types of silicon sensors with hadron, muon, and electron beams. Irradiated FBCM23 ASICs and silicon-pad sensors were also tested to simulate the expected conditions near the end of the detector's lifetime in the HL-LHC radiation environment. Based on test results, direct bonding between the sensor and ASIC was chosen, and an optimal bias voltage and ASIC threshold for FBCM operation were proposed. The current design of the front-end test board was validated following the beam test and is now being used for the first front-end module, which is expected to be produced in summer 2025. These results represent a major step forward in validating the FBCM concept, first version of the firmware and establishing a reliable design path for the final detector.

Beam-line instrumentation (beam position and profi↗
DOE OSTI2025

Detecting Short Circuits: Post Accident Electric Vehicle Battery Safety Check

Fast and accurate detection of soft short circuits (SCs) in the battery packs of damaged electric vehicles is needed by first responders and mechanics to mitigate the potential risk from battery fires that may occur hours, days, or weeks after an accident. Here, this paper presents an SC-detection algorithm for potentially damaged lithium-ion batteries that works quickly and without a priori knowledge of the battery-pack chemistry, capacity, state of charge, or state of health. The proposed universal SC-detection algorithm is designed to be implemented on an inexpensive handheld device that can connect to and monitor the voltages of all cells in a pack. Transient filtering and linear-quadratic state observation provide estimates of normalized SC current for every cell in the pack. Cells with SC-current estimates outside a sigma-based threshold are detected. Simulations, experiments, and electric vehicle (EV) crash data are used to verify the speed, sensitivity, and accuracy of the method, demonstrating 96% accurate detection of 0.0027 C SCs in under 1 h for 5S cell groups in the lab and no false positives for crashed Volkswagen, Chevrolet, and Tesla vehicles without SCs.

25 - ENERGY STORAGE↗
DOE OSTI2025

Thermal stress in degraded forests in the Brazilian Amazon Arc of Deforestation

Understanding thermal stress in tropical forests has taken on new urgency in light of accelerating climate change and expansion of deforestation and forest degradation. Degraded tropical forests in particular may be approaching critical temperature thresholds even more rapidly than intact forests, with implications for tree survival and ecosystem recovery. We investigate thermal stress in degraded tropical forests within the Brazilian Amazon Arc of Deforestation. Using land surface temperature data from the ECOsystem Spaceborne Thermal Radiometer Experiment on the international Space Station (ECOSTRESS), we compared canopy temperatures of intact, selectively logged, and burned forests in Feliz Natal, Mato Grosso, Brazil. Upper canopy temperatures in previously burned forests were 4.1% higher (mean = 36.5 °C) and 50.9% more variable compared to intact and logged forests, which showed remarkably similar temperature distributions (means of 34.9 °C and 35.1 °C, respectively). Modeled leaf temperature distributions based on canopy temperature measurements from one of the warmest days in a 2 year dry season record indicated that 87% of leaves in the warmest burned forest patches exceeded the temperature threshold where respiration surpasses photosynthesis, compared to approximately 72%–74% in intact and logged forests, respectively, in the same time period. After controlling for environmental factors, burned forests were predicted to be 2.6 °C warmer on average [1.39 °C–3.96 °C, 95% credible interval] than intact forests across a 5–40 m canopy height range. Burned forests showed modest thermal recovery over time, with temperatures decreasing by approximately 1.2 °C over a 30 year recovery period. In contrast, logged forests showed minimal thermal differences from intact forests (−0.353 on average, [−1.125–0.274, 95% credible interval]) and negligible change (0.15 °C) over the same timeframe. While the absolute probabilities of exceeding damaging thermal thresholds remain low across all forest types under current climate conditions, the probability of leaves exceeding temperatures that cause permanent leaf damage was ten times higher in burned forests, with implications for the future of burned forest regeneration in water-limited regions of the Amazon basin. In particular, the combination of higher mean temperatures, greater temperature variability, and more frequent exposure to damaging thermal thresholds implies that burned tropical forests will experience substantially higher mortality rates and slower biomass recovery compared to intact and selectively logged forests, especially in water-limited regions where trees cannot rely on evaporative cooling to moderate canopy temperatures.

Brazilian Amazon Arc of Deforestation↗
DOE OSTI2025

Mechanical Property Assessment of Unirradiated Cladding After Exposure to Time at Temperature

Light water reactors in the United States are operated within inherent safety limits designed to account for anticipated operational occurrences (AOOs). Unlike more severe reactor transients, these events permit the potential reuse of reactor cladding, highlighting the nuanced role of thresholds in influencing reactor efficiency compared to design-basis or beyond-design-basis transient conditions. The threshold designated for AOO peak cladding and fuel temperatures are currently grounded around thermal hydraulic limits such as surpassing the critical heat flux (CHF), rather than in fuel-cladding material performance. This CHF criterion therefore represents a conservative approach to AOO transients during the reactor lifetime. Extending this threshold to higher temperatures than CHF can result in additional operation efficiency gains. Here, a material performance-based approach is assessed to better understand the physical material limits of short time scale exposures to elevated temperatures. This approach, termed time at temperature (t@T), references fuel cladding microstructural and mechanical response to rapid temperature transients in absence of radiation damage. The results of this work are expected to help identify margin for the United States reactor fleet, which could be utilized to increase operational efficiencies through decreased reactor outages.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated structures remain unexplored. Heterostructure field‐effect transistors are fabricated using GeSn/SiGeSn quantum wells and electronic transport properties of 2D holes are characterized. At 2 K, heterostructure field‐effect transistors with well/barrier compositions of Ge 0.945 Sn 0.055 /Si 0.03 Ge 0.93 Sn 0.04 and Ge 0.9 Sn 0.1 /Si 0.017 Ge 0.927 Sn 0.056 , show peak mobilities of 9000 and 19 000 cm 2 /Vs, respectively, the latter setting a record for the highest mobility reported for GeSn quantum wells with a Sn concentration around 6 % or greater. Remarkably, at low carrier densities, devices with a SiGeSn barrier exhibit mobilities several times higher than previously reported for GeSn quantum wells with a Ge barrier. This higher mobility contrasts with the expectation that alloy scattering from the barrier would reduce carrier mobility. Two mechanisms based on atom probe tomography data analyses are proposed: i) unintentionally improved SiGeSn/GeSn interface and/or ii) reduced alloy scattering from short‐range order. Significant current–voltage hysteresis is observed, with the effective threshold gate voltage shifting by more than 5 V, attributed to non‐equilibrium trapped charge at various interfaces within the SiGeSn heterostructure.

GeSn↗
DOE OSTI2025

Radiation Response of Ga 2 O 3 MOSFETs Probed via Focused Particle Beams

Gallium Oxide (Ga 2 O 3 ), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. In conclusion, this research enhances the understanding of Ga2O3 MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.

MOSFET↗
DOE OSTI2025

On Rate-Limiting Mechanisms in NMC Cathodes: The Interplay of Low and High Current Constraints

In this study, we investigate the rate performance limits in LiNi 0.6 Mn 0.2 Co 0.2 O 2 cathodes for lithium-ion batteries, focusing on how cathode thickness, porosity, and threshold voltage impact discharge capacity. By conducting galvanostatic discharge experiments across a wide range of current densities using cathodes of varying thicknesses and porosities, we identify two distinct rate-limiting mechanisms: ionic liquid-diffusion and Ohmic/charge-transfer limitations. Our findings show that thick, dense cathodes are primarily limited by lithium diffusion in the electrolyte, while thinner and more porous cathodes are dominated by Ohmic/charge-transfer limitations, particularly at higher lower cutoff voltages. Crucially, these results allow us to identify the rate-limiting mechanisms in different cathode configurations, offering clear insights into how cathode design can be optimized for improved performance. Understanding these mechanisms is essential for designing next-generation batteries with enhanced rate performance, which is critical for applications such as electric vehicles and renewable energy storage systems.

Brischetto, Martin (ORCID:0000000339865813)↗
DOE OSTI2025

Impact of 12-nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

Here, this article presents a comparative analysis of total ionizing dose (TID) response in GlobalFoundries’ (GF) 12 low-power (LP) and 12LP+12-nm bulk fin field effect transistor (FinFET) technologies using 10-keV X-rays. Our findings show that 12LP+ n-type transistors demonstrate higher sensitivity to TID degradation of the off-state leakage drain current compared to 12LP. Data indicate that for both 12LP and 12LP+, transistors with higher threshold voltages (VTs) exhibit lower off-state drain-source leakage postirradiation compared to transistors with lower VTs. Data consistently show that transistors with fewer fins per transistor show superior TID tolerance, in both 12LP and 12LP+ technologies. Lower VT transistors in both technologies display similar preirradiation leakage currents. On the other hand, higher VT transistors in 12LP+ show lower preirradiation leakage currents than those in 12LP, highlighting that the front-end-of-line of 12LP+ technology has been modified compared to 12LP. p-type devices in 12LP+ presented negligible degradation. Larger TID sensitivity in 12LP+ might be attributed to the implementation of dual-metal gate work functions, reduced halo doping, deeper source/drain (S/D) doping profiles, and/or 12LP+ having narrower fins compared to 12LP.

Dual-metal gate work functions↗