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The emission properties of lanthanum hexaboride in an atmosphere of nitrogen were investigated. The emitter was not poisoned by adsorbed nitrogen. This result should have application to magnetohydrodynamic devices in which electron flow from channel walls is required.
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Devices called solid-state ferroelectric- based sources (SSFBSs) are under development as sources of electrons, ions, ultraviolet light, and x-rays for diverse applications in characterization and processing of materials. Whereas heretofore it has been necessary to use a different device to generate each of the aforementioned species of charged particles or radiation, a single SSFBS can be configured and operated to selectively generate any of the species as needed using a single source. Relative to comparable prior sources based, variously, on field emission, thermionic emission, and gaseous discharge plasmas, SSFBSs demand less power, and are compact and lightweight. An SSFBS exploits the unique physical characteristics of a ferroelectric material in the presence of a high-frequency pulsed electric field. The basic building block of an SSFBS is a ferroelectric cathode -- a ferroelectric wafer with a solid electrode covering its rear face and a grid electrode on its front face (see figure). The application of a voltage pulse -- typically having amplitude of several kilovolts and duration of several nanoseconds -- causes dense surface plasma to form near the grid wires on the front surface.
We present a unified thermionic emission (TE) and thermionic-field emission (TFE) model for the ideal reverse-bias leakage current in Schottky junctions. The unified TE–TFE analytical model advances upon previous analytical TFE models by Murphy–Good and Padovani–Stratton, which are the two most widely adopted models by the community, in two major aspects: (i) the applicability of the TFE expression therein is extended to near-zero surface electric fields by an error-function correction, allowing for the calculation of the total current by a nontrivial sum of TE (over-the-barrier current) and TFE (below-the-barrier current) contributions; therefore, an accurate description of the TE-to-TFE transition region is captured analytically for the first time; (ii) image-force lowering is considered with much-simpler correction terms. Comparisons with the reference numerical model show that the unified TE–TFE model has excellent accuracy, as well as a 10 000× reduction in computation time. The unified model is further tested against experimental data from Schottky barrier diodes based on Si, 4H-SiC, GaN, and β-Ga 2 O 3 , revealing accurate extractions of barrier heights and correct descriptions of the ideal reverse leakage characteristics. With the extended applicable range, improved accuracy, and computational efficiency, the unified TE–TFE model is highly valuable for the design and analysis of devices based on Schottky junctions, as well as for potential integration in technology computer-aided design (TCAD) tools.
In situ monitoring is required to improve the understanding and increase the reliability of additive manufacturing methods such as laser powder bed fusion (LPBF). Current diagnostic methods for LPBF capture optical images, X-ray radiographs, or measure the emission of thermal or acoustic signals from the component. Herein, a methodology based on the thermal emission of electrons - thermionic emission - from the metal surface during LPBF is proposed which can resolve laser-material interaction dynamics. The high sensitivity of thermionic emission to surface temperature and surface morphology is revealed to enable precise determination of the transition between conduction and keyhole mode melting regimes. Increases in thermionic emission are correlated to laser scanning conditions that give rise to pore formation and regions where surface defects are pronounced. The information presented here is a critical step in furthering our understanding and validation of laser-based metal additive manufacturing.
The temperature dependence of the gate current versus the gate voltage in complementary heterojunction field-effect transistors (CHFET's) is examined. An analysis indicates that the gate conduction is due to a combination of thermionic emission, thermionic-field emission, and conduction through a temperature-activated resistance. The thermionic-field emission is consistent with tunneling through the AlGaAs insulator. The activation energy of the resistance is consistent with the ionization energy associated with the DX center in the AlGaAs. Methods reducing the gate current are discussed.
Ultrawide bandgap β-(AlxGa1−x)2O3 vertical Schottky barrier diodes on (010) β-Ga2O3 substrates are demonstrated. The β-(AlxGa1−x)2O3 epilayer has an Al composition of 21% and a nominal Si doping of 2 × 1017 cm−3 grown by molecular beam epitaxy. Pt/Ti/Au has been employed as the top Schottky contact, whereas Ti/Au has been utilized as the bottom Ohmic contact. The fabricated devices show excellent rectification with a high on/off ratio of ∼109, a turn-on voltage of 1.5 V, and an on-resistance of 3.4 mΩ cm2. Temperature-dependent forward current-voltage characteristics show effective Schottky barrier height varied from 0.91 to 1.18 eV while the ideality factor from 1.8 to 1.1 with increasing temperatures, which is ascribed to the inhomogeneity of the metal/semiconductor interface. The Schottky barrier height was considered a Gaussian distribution of potential, where the extracted mean barrier height and a standard deviation at zero bias were 1.81 and 0.18 eV, respectively. A comprehensive analysis of the device leakage was performed to identify possible leakage mechanisms by studying temperature-dependent reverse current-voltage characteristics. At reverse bias, due to the large Schottky barrier height, the contributions from thermionic emission and thermionic field emission are negligible. By fitting reverse leakage currents at different temperatures, it was identified that Poole–Frenkel emission and trap-assisted tunneling are the main leakage mechanisms at high- and low-temperature regimes, respectively. Electrons can tunnel through the Schottky barrier assisted by traps at low temperatures, while they can escape these traps at high temperatures and be transported under high electric fields. This work can serve as an important reference for the future development of ultrawide bandgap β-(AlxGa1−x)2O3 power electronics, RF electronics, and ultraviolet photonics.
Thermionic emission of electrons from a body entering a planetary atmosphere or traveling near a star, calculating electric potential and electron density distribution at the surface
Infrared image sensors based on high density rectangular planar arrays of nano tunnel junctions have been proposed. These sensors would differ fundamentally from prior infrared sensors based, variously, on bolometry or conventional semiconductor photodetection. Infrared image sensors based on conventional semiconductor photodetection must typically be cooled to cryogenic temperatures to reduce noise to acceptably low levels. Some bolometer-type infrared sensors can be operated at room temperature, but they exhibit low detectivities and long response times, which limit their utility. The proposed infrared image sensors could be operated at room temperature without incurring excessive noise, and would exhibit high detectivities and short response times. Other advantages would include low power demand, high resolution, and tailorability of spectral response. Neither bolometers nor conventional semiconductor photodetectors, the basic detector units as proposed would partly resemble rectennas. Nanometer-scale tunnel junctions would be created by crossing of nanowires with quantum-mechanical-barrier layers in the form of thin layers of electrically insulating material between them (see figure). A microscopic dipole antenna sized and shaped to respond maximally in the infrared wavelength range that one seeks to detect would be formed integrally with the nanowires at each junction. An incident signal in that wavelength range would become coupled into the antenna and, through the antenna, to the junction. At the junction, the flow of electrons between the crossing wires would be dominated by quantum-mechanical tunneling rather than thermionic emission. Relative to thermionic emission, quantum mechanical tunneling is a fast process.
Anisotropy of electronic metal work functions for zero and high electric fields perpendicular to surface measured by field emission and thermionic techniques
Perovskite SrVO 3 has recently been proposed as a novel electron emission cathode material. Density functional theory (DFT) calculations suggest multiple low work function surfaces, and recent experimental efforts have consistently demonstrated effective work functions of ~2.7 eV for polycrystalline samples, both results suggesting, but not directly confirming, that some fraction of even lower work function surface is present. In this work, thermionic electron emission microscopy (ThEEM) and high-field ultraviolet photoemission spectroscopy (UPS) are used to study the local work function distribution and measure the work function of a partially oriented- (110)-SrVO 3 perovskite oxide cathode surface. Our results show direct evidence of low work function patches of about 2.0 eV on the cathode surface, with a corresponding onset of observable thermionic emission at 750 °C. We hypothesize that, in our ThEEM and UPS experiments, the high applied electric field suppresses the patch field effect, enabling the direct measurement of local work functions. This measured work function of 2.0 eV is comparable to the previous DFT-calculated work function values of the SrVO-terminated (110) SrVO 3 surface (2.3 eV) and SrO-terminated (100) surface (1.9 eV). The measured 2.0 eV value is also much lower than the work function for the (001) LaB 6 single crystal cathode (~2.7 eV) and comparable to the effective work function of B-type dispenser cathodes (~2.1 eV). If SrVO 3 thermionic emitters can be engineered to access domains of this low 2.0 eV work function, they have the potential to significantly improve thermionic emitter-based technologies.
Achieving a low mean transverse energy or temperature of electrons emitted from the photocathode-based electron sources is critical to the development of next-generation and compact x-ray free electron lasers and ultrafast electron diffraction, spectroscopy, and microscopy experiments. In this Letter, we demonstrate a record low mean transverse energy of 5 meV from the cryo-cooled (100) surface of copper using near-threshold photoemission. Further, we also show that the electron energy spread obtained from such a surface is less than 11.5 meV, making it the smallest energy spread electron source known to date: more than an order of magnitude smaller than any existing photoemission, field emission, or thermionic emission based electron source. Overall, our measurements also shed light on the physics of electron emission and show how the energy spread at few meV scale energies is limited by both the temperature and the vacuum density of states.
Device generates argon, krypton, or xenon plasma via thermionic emission and electrical discharge within hollow cathode and ejects plasma into surrounding vacuum. Goes from cold start up to full operation in less than 5 s after initial application of power. Exposed to moist air between operations without significant degradation of starting and running characteristics. Plasma generated by electrical discharge in cathode barrel sustained and aided by thermionic emission from emitter tube. Emitter tube does not depend on rare-earth oxides, making it vulnerable to contamination by exposure to atmosphere. Device modified for use as source of plasma in laboratory experiments or industrial processes.
Hollow cathodes with barium calcium aluminate impregnated tungsten emitters for thermionic emission are widely used in electric propulsion. These high current, low power cathodes are employed in ion thrusters, Hall thrusters, and on the International Space Station in plasma contactors. The requirements on hollow cathode life are growing more stringent with the increasing use of electric propulsion technology. The life limiting mechanism that determines the entitlement lifetime of a barium impregnated thermionic emission cathode is the evolution and transport of barium away from the emitter surface. A model is being developed to study the process of barium transport and loss from the emitter insert in hollow cathodes. The model accounts for the production of barium through analysis of the relevant impregnate chemistry. Transport of barium through the approximately static gas is also being treated. Finally, the effect of temperature gradients within the cathode are considered.
We report a lowering of work function for lanthanum hexaboride (LaB 6 ) by monolayer hexagonal boron nitride (hBN) coating. Photoemission electron microcopy (PEEM) and thermionic emission electron microscopy (TEEM) both revealed that the hBN coated region of a LaB 6 (100) single crystal has a lower work function compared to the bare (i.e., non-coated) and graphene coated regions. A broad and uniform brighter image of the hBN coated region in PEEM was quantitatively supported by a 0.4 eV decrease in the work function in photoelectron spectra compared to the bare region. TEEM results were consistent in that the hBN coated region exhibited thermionic emission at 905 °C, whereas the bare and graphene coated regions did not. A larger decrease in the work function for hBN coated LaB 6 (100) compared to graphene coated LaB 6 (100) was qualitatively supported by our density functional theory calculations. Adding an oxide layer in the calculations improved consistency between the calculation and experimental results. We followed up our calculations with synchrotron-radiation x-ray photoelectron spectroscopy and confirmed the presence of an oxide layer on our LaB 6 .
Thermionic emission is the process in which materials at sufficiently high temperature spontaneously emit electrons. This process occurs when electrons in a material gain sufficient thermal energy from heating to overcome the material's potential barrier, referred to as the work function. For most bulk materials very high temperatures (greater than 1500 K) are needed to produce appreciable emission. Carbon‐based nanomaterials have shown significant promise as emission materials because of their low work functions, nanoscale geometry, and negative electron affinity. One method of producing these materials is through the process known as microhollow cathode PECVD. In a microhollow cathode plasma, high energy electrons oscillate at very high energies through the Pendel effect. These high energy electrons create numerous radical species and the technique has been shown to be an effective method of growing carbon based nanomaterials. In this work, we explore the thermionic emission properties of carbon based nanomaterials produced by microhollow cathode PECVD under a variety of synthesis conditions. Initial studies demonstrate measureable current at low temperatures (approximately 800 K) and work functions (approximately 3.3 eV) for these materials.
Electron transpiration cooling for the leading edges (LE) of hypersonic aircraft utilizes thermionic emission; however, space-charge effects limit the electron emission rate, potentially diminishing the efficiency of this cooling mechanism. We develop a variational weak form of the Poisson equation that describes the sheath potential and then numerically solve it using the finite element method. This formulation has two main benefits: (1) the space-charge limit condition can be incorporated as a constraint and (2) it allows for the analysis of three-dimensional geometries with complex boundary conditions. We demonstrate that the current emitted from the surface of an LE is generally a small fraction of the Child–Langmuir limit due to space charge. We then propose several methods to enhance the emitted current from the surface and to boost the cooling effect of thermionic emission. These include increasing the plasma density, applying a negative surface potential, and using fringe fields under suitable geometric conditions. For a LaB6 emitting LE, the total emitted current is shown to be minimal and independent of the temperature of a surface with floating potential. However, when a negative potential is applied and the surface is heated, the emitted current follows the Richardson–Dushman relationship up to a critical temperature, beyond which it remains constant. At an applied surface potential of −5 V, the critical temperature is around 1700 K.
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