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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Low-loss superconducting resonators fabricated from tantalum films grown at room temperature

The use of α-tantalum in superconducting circuits has enabled a considerable improvement in the coherence time of transmon qubits. The standard approach to grow α-tantalum thin films on silicon involves heating the substrate, which takes several hours per deposition and prevents the integration of this material with wafers containing temperature-sensitive components. We report a detailed experimental study of an alternative growth method of α-tantalum on silicon, which is achieved at room temperature through the use of a niobium seed layer. Despite a substantially higher density of oxygen-rich grain boundaries in the films sputtered at room temperature, resonators made from these films are found to have state-of-the-art quality factors, comparable to resonators fabricated from tantalum grown at high temperature. This finding challenges previous assumptions about correlations between material properties and microwave loss of superconducting thin films, and opens a new avenue for the integration of tantalum into fabrication flows with limited thermal budget.

36 MATERIALS SCIENCE↗
NASA NTRS1975

Addition of oxygen to and distribution of oxides in tantalum alloy T-111 at low concentrations

Oxygen was added at 820 and 990 C at an oxygen pressure of about .0003 torr. The technique permitted predetermined and reproducible oxygen doping of the tantalum alloy (T-111). Based on the temperature dependency of the doping reaction, it was concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the tantalum and tungsten oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and oxygen from other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C but not at 820 C. The vaporization of WO3 has no apparent effect on the doping reaction.

Stecura, S.↗
NASA NTRS1976

Corrosion of oxygen-doped tantalum by lithium

The increase in the penetration of tantalum by liquid lithium with increasing oxygen content of tantalum results from the ability of lithium to extract oxygen from tantalum oxides and/or from regions of high oxygen concentrations, accompanied by the creation of minute channels. At low oxygen concentration, oxides are present primarily at the grain boundaries and the lithium penetration is primarily intergranular. At high oxygen concentration, oxides and/or regions of high oxygen concentration are present both at the grain boundaries and within the grains; lithium penetration is both intergranular and transgranular. For a specific oxygen concentration, the severity of corrosion decreases with increasing temperature because (1) the oxygen solubility increases with temperature, decreasing the number of oxide particles and/or regions of high oxygen concentration, and (2) the diffusivity of oxygen in tantalum increases, allowing more rapid oxygen removal at the tantalum lithium interface.

Stecura, S.↗
NASA NTRS2008

Scintillation Breakdowns in Chip Tantalum Capacitors

Scintillations in solid tantalum capacitors are momentarily local breakdowns terminated by a self-healing or conversion to a high-resistive state of the manganese oxide cathode. This conversion effectively caps the defective area of the tantalum pentoxide dielectric and prevents short-circuit failures. Typically, this type of breakdown has no immediate catastrophic consequences and is often considered as nuisance rather than a failure. Scintillation breakdowns likely do not affect failures of parts under surge current conditions, and so-called "proofing" of tantalum chip capacitors, which is a controllable exposure of the part after soldering to voltages slightly higher than the operating voltage to verify that possible scintillations are self-healed, has been shown to improve the quality of the parts. However, no in-depth studies of the effect of scintillations on reliability of tantalum capacitors have been performed so far. KEMET is using scintillation breakdown testing as a tool for assessing process improvements and to compare quality of different manufacturing lots. Nevertheless, the relationship between failures and scintillation breakdowns is not clear, and this test is not considered as suitable for lot acceptance testing. In this work, scintillation breakdowns in different military-graded and commercial tantalum capacitors were characterized and related to the rated voltages and to life test failures. A model for assessment of times to failure, based on distributions of breakdown voltages, and accelerating factors of life testing are discussed.

Teverovsky, Alexander↗
NASA NTRS2016

Deformation of Cases in High Capacitance Value Wet Tantalum Capacitors under Environmental Stresses

Internal gas pressure in hermetic wet tantalum capacitors is created by air, electrolyte vapor, and gas generated by electrochemical reactions at the electrodes. This pressure increases substantially with temperature and time of operation due to excessive leakage currents. Deformation of the case occurs when the internal pressure exceeds pressure of the environments and can raise significantly when a part operates in space. Contrary to the cylinder case wet tantalum capacitors that have external sealing by welding and internal sealing provided by the Teflon bushing and crimping of the case, no reliable internal sealing exists in the button case capacitors. Single seal design capacitors are used for high capacitance value wet tantalum capacitors manufactured per DLA L&M drawings #04003, 04005, and 10011, and require additional analysis to assure their reliable application in space systems. In this work, leakage currents and case deformation of button case capacitors were measured during different environmental test conditions. Recommendations for derating, screening and qualification testing are given. This work is a continuation of a series of NEPP reports related to quality and reliability of wet tantalum capacitors.

Tantalum Capacitors↗
NASA NTRS2020

Popcorning Failures in Polymer and MnO2 Tantalum Capacitors

Popcorning is a well-known effect in plastic encapsulated microcircuits (PEM) and it occurs in chip tantalum capacitors. The sensitivity of components to the presence of moisture during soldering is characterized by the moisture sensitivity level (MSL); however, contrary to PEMs, there is no standard procedure for establishing MSL for tantalum capacitors.The effect of absorbed moisture on soldering related degradation and failures in tantalum capacitors have not been studied properly yet, and there is no sufficient information regarding the difference in the sensitivity to soldering between polymer and MnO2 capacitors. In this work, 16 types of polymer and 9 types of MnO2 tantalum capacitors with different moisture content have been tested before and after reflow soldering. The level of moisture release during soldering has been estimated and thermo-mechanical analysis used to assess deformation of capacitorsduring soldering simulations. Results show that moisture uptake in similar parts is approximately two times greater in polymer than in MnO2 capacitors. Cracking of the case and degradation of parameters can occur in both types of parts, but MnO2 capacitors are much more likely to fail catastrophically with a short circuit and possible ignition during the first power-on cycle. This type of failure in MnO2 capacitors is lot-related, can occur even at derated voltages and relatively low levels of moisture sorption that corresponds to room conditions. Baking before soldering is an effective measure to prevent failures even in lots susceptible to popcorning damage.

Capacitor↗
DOE OSTI2026

Impact of Annealing on Superconducting Properties of Tantalum Thin Films

The pursuit for higher-coherence superconducting qubits has led to the adoption of new materials and innovative fabrication techniques. Among the commonly used superconducting materials, tantalum-based or tantalum-capped superconducting qubits have demonstrated the longest lifetimes, outperforming niobium devices even in the presence of their native oxides. Given the losses introduced by the surface oxide, one method to further improve performance is to reduce or eliminate the native oxide on tantalum through UHV annealing. In this work, we examine the effect of dissolved oxygen as a function of annealing temperature on the superconducting properties of tantalum thin films. Dissolved oxygen is quantified using atom probe tomography (APT) and secondary ion mass spectrometry (TOF-SIMS) and correlated with electromagnetic transport measurements performed using a Physical Property Measurement System (PPMS). This study observes that annealing decomposes the native oxide and drives oxygen diffusion into the film matrix. Increasing oxygen content decreases the superconducting transition temperature (Tc) and the residual resistivity ratio (RRR). The critical field decreases with the incorporation of oxygen, while the film’s coherence length decreases relatively by 5%. These results, as well as findings from ongoing studies linking fabrication processes to the structural and chemical properties of the superconducting film and Josephson junction, provide insight into effective strategies for improving the performance of superconducting devices.

Shinde, Maithilee [IIT, Chicago; Fermilab]↗
NASA NTRS2006

Performance and Reliability of Solid Tantalum Capacitors at Cryogenic Conditions

Performance of different types of solid tantalum capacitors was evaluated at room and low temperatures, down to 15 K. The effect of temperature on frequency dependencies of capacitance, effective series resistances (ESR), leakage currents, and breakdown voltages has been investigated and analyzed. To assess thermo-mechanical robustness of the parts, several groups of loose capacitors and those soldered on FR4 boards were subjected to multiple (up to 500) temperature cycles between room temperature and 77 K. Experiments and mathematical modeling have shown that degradation in tantalum capacitors at low temperatures is mostly due to increasing resistance of the manganese cathode layer, resulting in substantial decrease of the roll-off frequency. Absorption currents follow a power law, I approximately t(sup -m), with the exponent m varying from 0.8 to 1.1. These currents do not change significantly at cryogenic conditions and the value of the exponent remains the same down to 15 K. Variations of leakage currents with voltage can be described by Pool-Frenkel and Schottky mechanisms of conductivity, with the Schottky mechanism prevailing at cryogenic conditions. Breakdown voltages of tantalum capacitors increase and the probability of scintillations decreases at cryogenic temperatures. However, breakdown voltages measured during surge current testing decrease at liquid nitrogen (LN) compared to room-temperature conditions. Results of temperature cycling suggest that tantalum capacitors are capable of withstanding multiple exposures to cryogenic conditions, but the probability of failures varies for different part types.

Teverovsky, Alexander↗
NASA NTRS2010

Effect of Post-HALT Annealing on Leakage Currents in Solid Tantalum Capacitors

Degradation of leakage currents is often observed during life testing of tantalum capacitors and is sometimes attributed to the field-induced crystallization in amorphous anodic tantalum pentoxide dielectrics. However, degradation of leakage currents and the possibility of annealing of degraded capacitors have not been investigated yet. In this work the effect of annealing after highly accelerated life testing (HALT) on leakage currents in various types of solid tantalum capacitors was analyzed. Variations of leakage currents with time during annealing at temperatures from 125 oC to 180 oC, thermally stimulated depolarization (TSD) currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. Annealing resulted in a gradual decrease of leakage currents and restored their initial values. Repeat HALT after annealing resulted in reproducible degradation of leakage currents. The observed results are explained based on ionic charge instability (drift/diffusion of oxygen vacancies) in the tantalum pentoxide dielectrics using a modified Schottky conduction mechanism.

Teverovsky, Alexander↗
NASA NTRS2012

Effect of Compressive Stresses on Leakage Currents in Microchip Tantalum Capacitors

Microchip tantalum capacitors are manufactured using new technologies that allow for production of small size capacitors (down to EIA case size 0402) with volumetric efficiency much greater than for regular chip capacitors. Due to a small size of the parts and leadless design they might be more sensitive to mechanical stresses that develop after soldering onto printed wiring boards (PWB) compared to standard chip capacitors. In this work, the effect of compressive stresses on leakage currents in capacitors has been investigated in the range of stresses up to 200 MPa. Significant, up to three orders of magnitude, variations of currents were observed after the stress exceeds a certain critical level that varied from 10 MPa to 180 MPa for capacitors used in this study. A stress-induced generation of electron traps in tantalum pentoxide dielectric is suggested to explain reversible variations of leakage currents in tantalum capacitors. Thermo-mechanical characteristics of microchip capacitors have been studied to estimate the level of stresses caused by assembly onto PWB and assess the risk of stress-related degradation and failures. Keywords: tantalum capacitors, leakage current, soldering, reliability, mechanical stress.

Teverovsky, Alexander↗
NASA NTRS2017

Kinetics of Moisture Sorption and Reverse Bias Degradation in Chip Tantalum Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 ºC. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed.

Teverovsky, Alexander↗
NASA NTRS2017

Kinetics of Moisture Sorption and Reverse Bias Degradation in Chip Tantalum Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 C. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed.

Teverovsky, Alexander↗
NASA NTRS2021

Acceleration Factors for Reliability Assessment of Polymer Tantalum Capacitors

Using polymer tantalum capacitors in Hi-Rel systems requires an assessment of the reliability characteristics of the parts. For this assessment, tantalum capacitors are typically subjected to reliability testing at temperatures and voltages exceeding their specified values, and the failure rate (FR) — or the probability of failure during use conditions — is calculated based on voltage and temperature acceleration factors. In this work, various types and lots of polymer tantalum capacitors have been tested at highly accelerated life test (HALT) conditions and the acceleration factors have been determined using different techniques. It has been shown that the behavior of capacitors under HALT conditions can be described based on the time-dependent dielectric breakdown (TDDB) model, which explains the presence of infant mortality (IM) and wear-out failures using the same failure mechanisms and allows for an assessment of the acceleration factors. The difference in acceleration factors obtained using exponential and power models is discussed. Analysis shows that with proper derating, screening, and qualification testing, the reliability of frameless Hi-Rel COTS polymer tantalum capacitors is adequate for space missions.

Alex Eidelman↗
NASA NTRS2021

Acceleration Factors for Reliability Assessment of Polymer Tantalum Capacitors

Using polymer tantalum capacitors in Hi-Rel systems requires an assessment of the reliability characteristics of the parts. For this assessment, tantalum capacitors are typically subjected to reliability testing at temperatures and voltages exceeding their specified values, and the failure rate (FR) — or the probability of failure during use conditions — is calculated based on voltage and temperature acceleration factors. In this work, various types and lots of polymer tantalum capacitors have been tested at highly accelerated life test (HALT) conditions and the acceleration factors have been determined using different techniques. It has been shown that the behavior of capacitors under HALT conditions can be described based on the time-dependent dielectric breakdown (TDDB) model, which explains the presence of infant mortality (IM) and wear-out failures using the same failure mechanisms and allows for an assessment of the acceleration factors. The difference in acceleration factors obtained using exponential and power models is discussed. Analysis shows that with proper derating, screening, and qualification testing, the reliability of frameless Hi-Rel COTS polymer tantalum capacitors is adequate for space missions.

Alex Eidelman↗
NASA NTRS2018

Anomalous Transients in Chip Polymer Tantalum Capacitors

Contrary to MnO2 tantalum capacitors, transient processes in polymer tantalum capacitors after voltage application might result in anomalously high, ampere-level currents when a capacitor might appear as a short circuit for a time that is much greater than a transient time in MnO2 capacitors. In this work, conditions that cause anomalous transients in different types of polymer tantalum capacitors have been analyzed. Related phenomena that included increasing of capacitance and dissipation factors with voltage, parametric surge current test failures without damage to capacitors, and increasing leakage currents at low temperatures are described. It has been shown that anomalous transients increased substantially with applied voltage and with reduction of moisture content in capacitors caused by storage or operation at high temperatures and/or in vacuum. Different types of capacitors exhibited different level of transients and modification of conductive polymers or process of their application might decrease transient leakage currents substantially. For space applications, the risk of failures related to anomalous transients can be mitigated by special testing procedures to select parts with an acceptable level of transients and by voltage derating.

Tantalum Capacitors↗
DOE OSTI2026

Effect of directed energy deposition process parameter on build quality of tantalum

Tantalum is a refractory metal used in a variety of harsh environment applications. Additive manufacturing of tantalum is limited based on its high melting point and affinity for oxygen. Directed Energy Deposition is an additive manufacturing technique with rapid deposition time and compositional flexibility within builds. Additively manufactured tantalum is susceptible to a variety of material and process-based defects. Various lack-of-fusion defects were identified resulting from excessive powder feed rates or insufficient laser power. Oxygen impurities in some samples caused cracking and increased material hardness. Precipitates were identified in the highly oxidized samples which were printed immediately after the build chamber was opened. High-density, low-defect parts were successfully produced. The effects of scan speed, laser power, and powder feed rate on density and defects were analyzed. A processing window was identified for producing high-quality parts which requires adequately high laser power and lower powder feed rate.

DED↗
NASA NTRS2014

Evaluation of Ferrite Chip Beads as Surge Current Limiters in Circuits with Tantalum Capacitors

Limiting resistors are currently required to be connected in series with tantalum capacitors to reduce the risk of surge current failures. However, application of limiting resistors decreases substantially the efficiency of the power supply systems. An ideal surge current limiting device should have a negligible resistance for DC currents and high resistance at frequencies corresponding to transients in tantalum capacitors. This work evaluates the possibility of using chip ferrite beads (FB) as such devices. Twelve types of small size FBs from three manufacturers were used to evaluate their robustness under soldering stresses and at high surge current spikes associated with transients in tantalum capacitors. Results show that FBs are capable to withstand current pulses that are substantially greater than the specified current limits. However, due to a sharp decrease of impedance with current, FBs do not reduce surge currents to the required level that can be achieved with regular resistors.

surge current testing↗
NASA NTRS2015

Random Vibration Testing of Advanced Wet Tantalum Capacitors

Advanced wet tantalum capacitors allow for improved performance of power supply systems along with substantial reduction of size and weight of the systems that is especially beneficial for space electronics. Due to launch-related stresses, acceptance testing of all space systems includes random vibration test (RVT). However, many types of advanced wet tantalum capacitors cannot pass consistently RVT at conditions specified in MIL-PRF-39006, which impedes their use in space projects. This requires a closer look at the existing requirements, modes and mechanisms of failures, specifics of test conditions, and acceptance criteria. In this work, different lots of advanced wet tantalum capacitors from four manufacturers have been tested at step stress random vibration conditions while their currents were monitored before, during, and after the testing. It has been shown that the robustness of the parts and their reliability are mostly due to effective self-healing processes and limited current spiking or minor scintillations caused by RVT do not increase the risk of failures during operation. A simple model for scintillations events has been used to simulate current spiking during RVT and optimize test conditions. The significance of scintillations and possible effects of gas generation have been discussed and test acceptance criteria for limited current spiking have been suggested.

cracking↗