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At least 37 records · Page 2

Solar Surfing: Final Report on a Phase I NASA Innovative Advanced Concepts Study

The Sun sustains life on Earth and NASA has made its study one of the four pillars of the Science Mission Directorate. A specific area of study, the coronal heating problem, has been of significant concern for nearly 80years; namely how does the 5800 K surface of the Sun heat the nearby corona to over 1,000,000 K. Differing theories have been proposed to explain this process, but verification by actual measurement would not only resolve this issue, it would provide close-up measurements of the Sun never before obtained. However, this requires the development of a solar shield that can protect a satellite located less than 10,000 km from the Sun's surface. Steps towards that capability are the goal of this NIAC project. The current state-of-the-art in solar shielding is best shown by the upcoming Parker Solar Probe Mission, so the approach taken by that satellite is discussed and used as a starting point; allowing a distance of 9.5 solar radii from the Sun's center to be reached. It is then shown that state-of-the-art solar reflectors do not improve this performance. Next, we review the use of pressed powder as a better solar reflector and show that there is some improvement, but not sufficient to reach the Sun's surface. We spend some time on this architecture because the Parker Solar Probe has a thin scattering layer on its solar shield and it is important to discuss the advantages and disadvantages of this feature.

solar surfing↗

Efficient solar cells by space processing

Thin films of electron beam evaporated silicon were deposited on molybdenum, tantalum, tungsten and molybdenum disilicide under ultrahigh vacuum conditions. Mass spectra from a quadrapole residual gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry. The presence of phosphorus in the silicon was responsible for attaining elevated temperatures with silicide formations. Heteroepitaxial silicon growth was sensitive to the presence of oxygen during deposition, the rate and length of deposition as well as the substrate orientation.

Schmidt, F. A.↗

3-D supersonic combustion experiments with hydrogen in V-trough

Both supersonic blowdown and free jet wind tunnels were used in oil flow visualization and hydrogen gas burning tests of 60- and 90-deg V-shaped trough combustion characteristics. Oil dots showed that mass outflow from the reattachment region at the bottom of the V-trough dominated flow behavior, and occupied the trough's entire length and 10% of its cross-section. Intermingled vortex pairs were also found to superimpose themselves upon the outflow, and hydrogen burning within troughs reduced missile base drag by 25%. The troughs were aligned so that their long dimensions were parallel to the airflow, and the two top edges of the V section were mounted flush with respect to the upstream flat surfaces. Step heights tested ranged from 3.4 mm to 6.25 cm.

Friedberg, R. A.↗

Reaction of cobalt in SO2 atmospheric at elevated temperatures

The reaction rate of cobalt in SO2 argon environments was measured at 650 C, 700 C, 750 C and 800 C. Product scales consist primarily of an interconnected sulfide phase in an oxide matrix. At 700 C to 800 C a thin sulfide layer adjacent to the metal is also observed. At all temperatures, the rapid diffusion of cobalt outward through the interconnected sulfide appears to be important. At 650 C, the reaction rate slows dramatically after five minutes due to a change in the distribution of these sulfides. At 700 C and 750 C the reaction is primarily diffusion controlled values of diffusivity of cobalt (CoS) calculated from this work show favorable agreement with values of diffusivity of cobalt (CoS) calculated from previous sulfidation work. At 800 C, a surface step becomes rate limiting.

Jacobson, N. S.↗

Reaction of cobalt in SO2 atmospheres at elevated temperatures

The reaction rate of cobalt in SO2 argon environments was measured at 650 C, 700 C, 750 C and 800 C. Product scales consist primarily of an interconnected sulfide phase in an oxide matrix. At 700 C to 800 C, a thin sulfide layer adjacent to the metal is also observed. At all temperatures, the rapid diffusion of cobalt outward through the interconnected sulfide appears to be important. At 650 C, the reaction rate slows dramatically after five minutes due to a change in the distribution of these sulfides. At 700 C and 750 C, the reaction is primarily diffusion controlled; values of diffusivity of cobalt (CoS) calculated from this work show favorable agreement with values of diffusivity of cobalt (CoS) calculated from previous sulfidation work. At 800 C, a surface step becomes rate limiting. Previously announced in STAR as N83-35104

Jacobson, N. S.↗

Design of low Reynolds number airfoils. II

Low Reynolds number airfoils were designed for high lift-to-drag ratios. Design considerations of low Re-airfoils are discussed and design examples are presented. It is shown that the performance of advance low Reynolds airfoils critically depends on proper laminar separation and transition control for the minimum profile drag coefficient with minimum turbulator device drag. This transition control close to the laminar separation is possible by enforcing transition on the upper surface either directly by means of spanwise rows of three-dimensional roughness elements, bleed or suction holes, or indirectly by means of destabilizing the upper surface boundary layer by means of backward facing surface steps, two-dimensional or zig-zag tapes or weak boundary layer blowing. Pneumatic turbulators are found to be advantageous because they can be adjusted to different external flow conditions better than mechanical ones.

Pfenninger, W.↗

Combined LAURA-UPS hypersonic solution procedure

A combined solution procedure for hypersonic flowfields around blunted slender bodies was implemented using a thin-layer Navier-Stokes code (LAURA) in the nose region and a parabolized Navier-Stokes code (UPS) on the after body region. Perfect gas, equilibrium air, and non-equilibrium air solutions to sharp cones and a sharp wedge were obtained using UPS alone as a preliminary step. Surface heating rates are presented for two slender bodies with blunted noses, having used LAURA to provide a starting solution to UPS downstream of the sonic line. These are an 8 deg sphere-cone in Mach 5, perfect gas, laminar flow at 0 and 4 deg angles of attack and the Reentry F body at Mach 20, 80,000 ft equilibrium gas conditions for 0 and 0.14 deg angles of attack. The results indicate that this procedure is a timely and accurate method for obtaining aerothermodynamic predictions on slender hypersonic vehicles.

Wood, William A.↗

Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001) SiC Substrates

In this study of 4H-SiC and 6H-SiC epitaxial films we found that film morphology was strongly dependent on the tilt angle of the substrate. Large surface steps (up to 25 nm high) due to step bunching were more prevalent at smaller tilt angles. Also, 4H films were more susceptible than 6H to 3C-SiC inclusions during growth. The lateral growth of steps from screw dislocations in low-tilt-angle substrates demonstrated that step bunching on the atomic scale was anisotropic with respect to growth direction for both 4H-SiC and 6H-SiC. A model explaining this behavior is presented. We observed and directly measured the Burgers vector of a 'super' screw dislocation in a 6H-SiC epilayer.

Powell, J. A.↗

Numerical Simulation of Nanostructure Growth

Nanoscale structures, such as nanowires and carbon nanotubes (CNTs), are often grown in gaseous or plasma environments. Successful growth of these structures is defined by achieving a specified crystallinity or chirality, size or diameter, alignment, etc., which in turn depend on gas mixture ratios. pressure, flow rate, substrate temperature, and other operating conditions. To date, there has not been a rigorous growth model that addresses the specific concerns of crystalline nanowire growth, while demonstrating the correct trends of the processing conditions on growth rates. Most crystal growth models are based on the Burton, Cabrera, and Frank (BCF) method, where adatoms are incorporated into a growing crystal at surface steps or spirals. When the supersaturation of the vapor is high, islands nucleate to form steps, and these steps subsequently spread (grow). The overall bulk growth rate is determined by solving for the evolving motion of the steps. Our approach is to use a phase field model to simulate the growth of finite sized nanowire crystals, linking the free energy equation with the diffusion equation of the adatoms. The phase field method solves for an order parameter that defines the evolving steps in a concentration field. This eliminates the need for explicit front tracking/location, or complicated shadowing routines, both of which can be computationally expensive, particularly in higher dimensions. We will present results demonstrating the effect of process conditions, such as substrate temperature, vapor supersaturation, etc. on the evolving morphologies and overall growth rates of the nanostructures.

Hwang, Helen H.↗

Heat transfer in the turbulent boundary layer with a step change in surface roughness

Measurements of Stanton numbers, velocity profiles, temperature profiles, and turbulence intensity profiles are reported for turbulent flat plate boundary layer flows with a step change in surface roughness. The first 0.9 m length of the test surface is roughened with 1.27 mm diameter hemispheres spaced 2 base diameters apart in a staggered array. The remaining 1.5 m length is smooth. The experiments show that the step change from a rough to a smooth surface has a dramatic effect on the convective heat transfer. In many cases, the Stanton number drops below the smooth-wall correlation immediately downstream of the change in roughness. The Stanton number measurements are compared with predictions using the discrete element method with excellent results.

Taylor, Robert P.↗

Effects of an aft facing step on the surface of a laminar flow glider wing

A motor glider was used to perform a flight test study on the effects of aft facing steps in a laminar boundary layer. This study focuses on two dimensional aft facing steps oriented spanwise to the flow. The size and location of the aft facing steps were varied in order to determine the critical size that will force premature transition. Transition over a step was found to be primarily a function of Reynolds number based on step height. Both of the step height Reynolds numbers for premature and full transition were determined. A hot film anemometry system was used to detect transition.

Sandlin, Doral R.↗

Surface Characterization of 3C-SiC Mesa Heterofilms: Evidence for Growth by Edge/Corner Nucleation Mechanism

This paper presents the first detailed observations of unique surface morphologies of 3C-Sic films grown on 4W6H-SIC mesas by the step-free surface heteroepitaxy technique. The top surfaces of 3C-Sic films were extensively studied by optical microscopy and atomic force microscopy (AFM) as both film thickness (i.e,, growth time) and growth temperature (i.e., terrace nucleation rate) were varied following complete coverage of each 4W6H mesa by an initial 3C-Sic film. Almost all surface steps observed by AFM were 0.25 nm, the height of a single Si-C bilayer. However, strikingly different step patterns were observed, suggesting that radically different processes dominate the nucleation of new 3C-Sic bilayers on top of existing 3C-Sic film surfaces.

Trunek, Andrew J.↗

Methods for growth of relatively large step-free SiC crystal surfaces

A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

Neudeck, Philip G.↗

A Compact Two-Step Laser Time-Of-Flight Mass Spectrometer for In Situ Analysis of Planetary Surfaces

Two-step laser mass spectrometry (L2MS) has proved to be a powerful tool for the analysis of aromatic organics in icy planetary simulants, meteorites, asphaltenes on Earth, and returned cometary particles from the Stardust mission. L2MS employs two lasers to separate the desorption and ionization processes of laser desorption ionization into distinct steps. In the first step, an infrared laser desorbs neutrals from a solid sample surface; in the second step, an ultraviolet laser forms molecular ions within the neutral plume through a resonance-enhanced process to minimize fragment at ion of complex species. We have recently demonstrated that the L2MS technique is compatible with a compact TOF-MS that could form the center piece of a future in situ landed planetary mission emphasizing surface chemistry or astrobiology. The increased sensitivity and selectivity offered by this technique has been demonstrated in analyses of various planetary analog mixtures and meteorite powders, and representative results of these analyses will be presented.

Getty, Stephanie A.↗

Silicon Carbide Growth

Andrew Trunek has focused on supporting the Sic team through the growth of Sic crystals, making observations and conducting research that meets the collective needs and requirements of the team while fulfilling program commitments. Cancellation of the Ultra Efficient Engine Technology (UEET) program has had a significant negative impact on resources and research goals. This report highlights advancements and achievements made with this cooperative agreement over the past year. NASA Glenn Research Center (GRC) continues to make advances in silicon carbide (SiC) research during the past year. Step free surfaces were used as substrates for the deposition of GaN epilayers that yielded very low dislocation densities. Defect free 3C- SiC was successfully nucleated on step free mesas and test diodes were fabricated. Web growth techniques were used to increase the usable surface area of dislocation free SiC by approximately equal to 40%. The greatest advancement has been attained on stepped surfaces of SiC. A metrology standard was developed using high temperature etching techniques titled "Nanometer Step Height Standard". This development culminated in being recognized for a 2004 R&D100 award and the process to produce the steps received a NASA Space Act award.

Source record↗

Flight-measured base pressure coefficients for thick boundary-layer flow over an aft-facing step for Mach numbers from 0.4 to 2.5

A 0.56-inch thick aft-facing step was located 52.1 feet from the leading edge of the left wing of an XB-70 airplane. A boundary-layer rake at a mirror location on the right wing was used to obtain local flow properties. Reynolds numbers were near 10 to the 8th power, resulting in a relatively thick boundary-layer. The momentum thickness ranged from slightly thinner to slightly thicker than the step height. Surface static pressures forward of the step were obtained for Mach numbers near 0.9, 1.5, 2.0, and 2.4. The data were compared with thin boundary-layer results from flight and wind-tunnel experiments and semiempirical relationships. Significant differences were found between the thick and the thin boundary-layer data.

Goecke, S. A.↗