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For technological applications of high T(sub c) superconductors, it will be necessary to overcome the inherent problem of brittleness, to develop materials with high current carrying capacity, and to devise ways of joining superconductors with other materials. These issues will be addressed in the context of superconducting films on metallic wires. These composite systems are expected to produce flexible wires with desirable properties.
Infrared spectroscopic techniques can provide a vital probe of the superconducting energy gap which is one of the most fundamental physical properties of superconductors. Currently, the central questions regarding the optical properties of superconductors are how the energy gap can be measured by infrared techniques and at which frequency the gap exists. An effective infrared spectroscopic method to investigate the superconducting energy gap, Eg, was developed by using the Bomem DA 3.01 Fourier Transformation Spectrophotometer. The reflectivity of a superconducting thin film of YBaCuO deposited on SrTiO3 was measured. A shoulder was observed in the superconducting state reflectance R(sub S) at 480/cm. This gives a value of Eg/kT(sub c) = 7.83, where k is the Boltzmann constant and T(sub c) is the superconducting transition temperature, from which, it is suggested that YBaCuO is a very strong coupling superconductor.
Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of T c =7.2 K. Here, we report the measured in-plane complex surface impedance of boron-doped diamond films in the microwave frequency range using a resonant technique. Experimentally measured inductance values are in good agreement with estimates obtained from the normal state sheet resistance of the material. Additionally, the magnetic penetration depth temperature dependence is consistent with that of a fully gapped s-wave superconductor. Boron-doped diamond films should find application where high kinetic inductance is needed, such as microwave kinetic inductance detectors and quantum impedance devices.
The development of high T sub c superconducting thin films on various microwave substrates is of major interest in space electronic systems. Thin films of YBa2Cu3O(7-Delta) were formed on SrTiO3, MgO, ZrO2 coated Al2O3, and LaAlO3 substrates by multi-layer sequential evaporation and subsequent annealing in oxygen. The technique allows controlled deposition of Cu, BaF2 and Y layers, as well as the ZrO buffer layers, to achieve reproducibility for microwave circuit fabrication. The three layer structure of Cu/BaF2/Y is repeated a minimum of four times. The films were annealed in an ambient of oxygen bubbled through water at temperatures between 850 C and 900 C followed by slow cooling (-2 C/minute) to 450 C, a low temperature anneal, and slow cooling to room temperature. Annealing times ranged from 15 minutes to 5 hrs. at high temperature and 0 to 6 hr. at 450 C. Silver contacts for four probe electrical measurements were formed by evaporation followed with an anneal at 500 C. The films were characterized by resistance-temperature measurements, energy dispersive X-ray spectroscopy, X-ray diffraction, and scanning electron microscopy. Critical transition temperatures ranged from 30 K to 87 K as a function of the substrate, composition of the film, thicknesses of the layers, and annealing conditions. Microwave ring resonator circuits were also patterned on these MgO and LaAlO3 substrates.
A novel approach to the superconducting Hall effect is developed, based on the opposing drift of the thermally excited quasi-particles. These collide quasi-elastically with the hydrodynamics superfluid velocity field circulating for outside the core of a vortex, thereby transferring momentum to the latter. The predicted Hall angle, by BCS theory, is of the order of kBTc divided by the Fermi energy, has sign opposite to that in the normal state because of the backflow, and disappears at low temperature.
Josephson currents interaction with LF surface plasmons in superposed thin dielectric and superconducting metal films, noting I-V characteristics
Ultrathin (5–50 nm) epitaxial superconducting niobium nitride (NbN) films were grown on AlN-buffered c-plane Al 2 O 3 by an industrial scale physical vapor deposition technique at 400°C. Both X-ray diffraction and scanning electron microscopy analysis show high crystallinity of the (111)-oriented NbN films, with a narrow full-width-at-half-maximum of the rocking curve down to 0.030°. The lattice constant decreases with decreasing NbN layer thickness, suggesting lattice strain for films with thicknesses below 20 nm. The superconducting transition temperature, the transition width, the upper critical field, the irreversibility line, and the coherence length are closely correlated to the film thickness. This work realized high quality ultrathin epitaxial NbN films by an industry-scale PVD technology at low substrate temperature, which opens up new opportunities for quantum devices.
Since the discovery of the YBaCuO bulk materials in 1987, Metalorganic Chemical Vapor Deposition (MOCVD) has been proposed for preparing HTSC high T(sub c) films. This technique is now capable of producing high-T(sub c) superconducting thin films comparable in quality to those prepared by any other methods. The MOCVD technique has demonstrated its superior advantage in making large area high quality HTSC thin films and will play a major role in the advance of device applications of HTSC thin films. The organometallic precursors used in the MOCVD preparation of HTSC oxide thin films are most frequently metal beta-diketonates. High T(sub c) superconductors are multi-component oxides which require more than one component source, with each source, containing one kind of precursor. Because the volatility and stability of the precursors are strongly dependent on temperature, system pressure, and carrier gas flow rate, it has been difficult to control the gas phase composition, and hence film stoichiometry. In order circumvent these problems we have built and tested a single source MOCVD reactor in which a specially designed vaporizer was employed. This vaporizer can be used to volatilize a stoichiometric mixture of diketonates of yttrium, barium and copper to produce a mixed vapor in a 1:2:3 ratio respectively of the organometellics. This is accomplished even though the three compounds have significantly different volatilities. We have developed a model which provides insight into the process of vaporizing mixed precursors to produce high quality thin films of Y1Ba2Cu3O7. It shows that under steady state conditions the mixed organometallic vapor must have a stoichiometric ratio of the individual organometallics identical to that in the solid mixture.
The problem of the normal-superconducting phase boundary for films in a parallel magnetic field, discussed in the classical paper by Ginzburg and Landau for temperatures close to the critical, is revisited with the help of the microscopic BCS theory for arbitrary temperatures taking pair-breaking and transport scattering into account. Although confirming experimental findings of the T c enhancement by the magnetic field, we find that the transport scattering pushes the phase transition curve to higher fields and higher temperatures for nearly all practical scattering rates. Still, the T c enhancement disappears in the dirty limit. Here, we also consider intriguing changes, such as reentrant superconductivity, caused to the phase boundary by pair-breaking magnetic ions spread on one of the film faces. These features await experimental verification.
We have developed a new transition-edge sensor material with critical temperature (T-c) in the range 100-200 mK. The new material is a solid solution of two superconducting components, MoxNb1-x, co-sputtered from two high-purity single-component targets (Mo and Nb). The T-c has a minimum (dT(c)/dx = 0) at an intermediate concentration of the components. We have optimized the deposition parameters and composition to provide films with a sharp superconducting transition at ~ 150 mK. We investigated structural features of the films and surface morphology using X-ray diffraction (XRD) and scanning electron microscopy. The XRD measurements indicate that the grown films are polycrystalline, with a preferred orientation along the (110) crystal direction and a clear correlation between superconducting properties and film microstructure.
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The recent observation of superconductivity in Nd 0.8 Sr 0.2 NiO 2 calls for further investigation and optimization of the synthesis of this infinite-layer nickelate structure. Here, we present our current understanding of important aspects of the growth of the parent perovskite compound via pulsed laser deposition on SrTiO 3 (001) substrates and the subsequent topotactic reduction. We find that to achieve single-crystalline, single-phase superconducting Nd 0.8 Sr 0.2 NiO 2 , it is essential that the precursor perovskite Nd 0.8 Sr 0.2 NiO 3 thin film is stabilized with no visible impurity phases; in particular, a Ruddlesden–Popper-type secondary phase is often observed. We have further investigated the evolution of the soft-chemistry topotactic reduction conditions to realize full transformation to the infinite-layer structure with no film decomposition or formation of other phases. We find that capping the nickelate film with a subsequent SrTiO 3 layer provides an epitaxial template to the top region of the nickelate film, much like the substrate. Thus, for currently optimized growth conditions, we can stabilize superconducting single-phase Nd 0.8 Sr 0.2 NiO 2 (001) epitaxial thin films up to ~10 nm.
We report on the values of the microwave conductivity in the normal (sigma(subN)) and superconducting (sigma*=sigma(sub1)-j sigma(sub2)) states of two laser ablated YBa2CU3O7(sigma) thin films at 35 GHz, in the temperature range from 20 to 300 K. The films 0.7 and 0.4 micrometers) were deposited on LaA10(sub3) by laser ablation. The conductivity was obtained from the microwave power transmitted through the films and assuming a two-fluid model. Values of sigma(subN) approximately 2.3 X 10(exp5) S/m at room temperature for both films, and of sigma(sub1) approximately 6.3 X 10(exp5) and 4.6 X 10(exp5) S/m at temperatures around 80 K were obtained for the 0.7 and 0.4 micrometer films respectively. For sigma(sub2) values of 4.9 X 10(exp6) and 5.4 X 10(exp6) S/m were obtained for the 0.7 and 0.4 micrometer films at 80 K. The expected conductor losses and Q-factor of a superconducting ring resonator were calculated using these conductivity values. The theoretical values were then compared with the experimental results obtained for a resonator fabricated from one of these films.
Microwave conductivities of thin films of high-temperature superconductors like YBa(3)Cu(3)O(7-delta) measured by noninvasive, nondestructive microwave-power-transmission method. Measurements yield useful information on superconducting and normal states of films and contribute to evaluation of films for use in microwave devices.
Superconducting phase transition temperature measurements as function of magnetic field in thin film hollow Al and In cylinders
Here we explore tailored labyrinth-like vortex motion in a niobium film placed on top of periodic arrays of T and I -shaped permalloy elements by imaging the vortex distribution in magnetic fields applied perpendicular to the superconducting layer under different in-plane polarizations of the TI structure. At low temperatures, we observe pronounced meandering of vortex motion around the TI elements. Remarkably, vortices can easily penetrate the sample along the TI columns even though the average vortex pinning in the patterned area is larger than in a bare niobium film. Accordingly, at temperatures close to the superconducting transition temperature, T c , the voltagecurrent curves in the patterned area show an earlier departure from the zero-resistivity state at small currents, followed by slower growth with increasing current as compared to the un-patterned film. We present a model based on magnetostatic interactions between magnetic charges at the edges of the polarized TI-elements and single magnetic charges of induced vortices to account for this behavior. We expect that similar magnetic structures imposing labyrinth-like vortex motion could be used for collective entanglement of vortices envisioned in quantum circuit operations.
Abstract Chemical engineering tailors functional materials to meet the demands of physical and chemical properties, accelerating materials discovery and design in a multidisciplinary field. However, stereotyped synthetic paradigms in physical and chemical approaches obstruct the effective integration of multiple advantages of respective materials exploration methods. Solid state reaction is often considered separately with wet chemistry synthesis route, such as film growth using physical vapor deposition and hydrothermal methods. Here, the controlled growth of FeSe thin films by physical deposition techniques followed by the chemical engineering to create heterogenous interface in FeSe films via a solution‐based environment is demonstrated. The two‐step route allows an expanded crystal structure and enhanced superconducting transition temperature from 3.6 to 38 K, providing a new strategy to design functional hybrid materials.
The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response was studied of laser ablated YBa2Cu3O(7-x)/LaAlO3 thin films as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.