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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Atomic Structural Features of Stacking Faults and Domain Connections in the Li- and Mn-Rich Cathode

Li- and Mn-rich layered oxides (LMRs), a class of earth-abundant materials for rechargeable Li-ion battery cathodes, crystallize into layered structures of two different symmetries: C2/m represented by Li 2 MnO 3 and R$\overline{3}$m represented by LiMn 0.5 Ni 0.5 O 2 . Fundamental questions about how the C2/m and R$\overline{3}$m domains spatially correlate within the same oxide grain and how the C2/m stacking faults arrange themselves when this happens still remain. Here, by using integrated differential phase contrast imaging in scanning transmission electron microscopy (STEM-iDPC), we probe the structural and compositional details of a prototypical, cobalt-free LMR material, 0.3Li 2 MnO 3 •0.7LiMn 0.5 Ni 0.5 O 2 (Li 1.13 Mn 0.57 Ni 0.3 O 2 ). The connection between the C2/m and R$\overline{3}$m domains is found to be abrupt, facilitated by the small lattice mismatch between the two structures. Stacking faults in the C2/m domains feature atomic plane shifting that accommodates stacking sequence changes, which explains why the stacking faults form in a random manner. Furthermore, a local disordering mechanism was identified to correlate with the C2/m stacking faults. Chemically, it is found that Ni coexists with Mn at the transition metal sites within the nominal Li 2 MnO 3 domain. As a result, this study demonstrates that STEM-iDPC is a very useful tool for capturing all the elements in a single image, revealing atomic details on domain connections and stacking faults in the LMRs.

Li-rich and Mn-rich oxides↗
DOE OSTI2022

Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires

While traditional ferroelectrics are based on polar crystals in bulk or thin film form, two-dimensional and layered materials can support mechanisms for symmetry breaking between centrosymmetric building blocks, e.g., by creating low-symmetry interfaces in van der Waals stacks. Here, we introduce an approach toward symmetry breaking in van der Waals crystals that relies on the spontaneous incorporation of stacking faults in a nonpolar bulk layer sequence. The concept is realized in nanowires consisting of Se-rich group IV monochalcogenide (GeSe 1–x S x ) alloys, obtained by vapor–liquid–solid growth. The single crystalline wires adopt a layered structure in which the nonpolar A-B bulk stacking along the nanowire axis is interrupted by single-layer stacking faults with local A-A' stacking. Density functional theory explains this behavior by a reduced stacking fault formation energy in GeSe (or Se-rich GeSe 1–x S x alloys). Computations demonstrate that, similar to monochalcogenide monolayers, the inserted A-layers should show a spontaneous electric polarization with a switching barrier consistent with a Curie temperature above room temperature. Second-harmonic generation signals are consistent with a variable density of stacking faults along the wires. Here, our results point to possible routes for designing ferroelectrics via the layer stacking in van der Waals crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Stacking Faults and Topological Properties in MnBi 2 Te 4 : Reconciling Gapped and Gapless States

Despite theoretical predictions of a gapped surface state for the magnetic topological insulator MnBi 2 Te 4 (MBT), there has been a series of experimental evidence pointing toward gapless states. Here, we theoretically explore how stacking faults could influence the topological characteristics of MBT. We envisage a scenario that a stacking fault exists at the surface of MBT, causing the uppermost layer to deviate from the ground state and its interlayer separation to be expanded. This stacking fault with modulated interlayer couplings hosts a nearly gapless state within the topmost layer due to charge redistribution as the outermost layer recedes. Furthermore, we find evidence of spin-momentum locking and preservation of weak band inversion in the gapless surface state, suggesting the nontrivial topological surface states in the presence of the stacking fault. In conclusion, our findings provide a plausible elucidation to the long-standing conundrum of reconciling the observation of gapped and gapless states on MBT surfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Machine-learning-aided density functional theory calculations of stacking fault energies in steel

A combined large-scale first principles approach with machine learning and materials informatics is proposed to quickly sweep the chemistry-composition space of advanced high strength steels (AHSS). AHSS are composed of iron and key alloying elements such as aluminum and manganese. A systematic exploration of the distribution of aluminum and manganese atoms in iron is used to investigate low stacking fault energies configurations using first principles calculations. To overcome the computational cost of exploring the composition space, this process is sped up using an automated machine learning tool: DeepHyper. Here our results predict that it is energetically favorable for Al to stay away from a stacking fault, but Mn atoms do not affect the stacking fault energy and can stay in the vicinity of the fault. The distribution of Al and Mn atoms in systems containing stacking faults and the effects of their interactions on the equilibrium distribution are systematically analyzed.

36 MATERIALS SCIENCE↗
NASA NTRS1982

The determination of the stacking fault energy in copper-nickel alloys

Methods for determining the stacking fault energies of a series of nickel-copper alloys to gain an insight into the embrittling effect of hydrogen are evaluated. Plans for employing weak beam dark field electron microscopy to determine stacking fault energies are outlined.

Leighly, H. P., Jr.↗
DOE OSTI2021

Towards stacking fault energy engineering in FCC high entropy alloys

Stacking Fault Energy (SFE) is an intrinsic alloy property that governs much of the plastic deformation mechanisms observed in fcc alloys. While SFE has been recognized for many years as a key intrinsic mechanical property, its inference via experimental observations or prediction using, for example, computationally intensive first-principles methods is challenging. This difficulty precludes the explicit use of SFE as an alloy design parameter. In this work, we combine DFT calculations (with necessary configurational averaging), machine-learning (ML) and physics-based models to predict the SFE in the fcc CoCrFeMnNiV-Al high-entropy alloy space. The best-performing ML model is capable of accurately predicting the SFE of arbitrary compositions within this 7-element system. Finally, this efficient model along with a recently developed model to estimate intrinsic strength of fcc HEAs is used to explore the strength–SFE Pareto front, predicting new-candidate alloys with particularly interesting mechanical behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Stacking Faults Originating from Star-Defects in 4H-SiC

Intense efforts are currently in progress to study various sources of basal plane dislocations (BPDs) in SiC epitaxial layers. BPDs can generate Shockley-type stacking faults (SSFs) in SiC epitaxial layers, which have been shown to be associated with the degradation of power devices. This study shows that the star-shaped defect can be a source of several BPDs in the epitaxial layer. We investigate the complex microstructure of the star defect, the generation of BPDs, and expansion of SSFs using various complementary microscopy and optical techniques. We show direct evidence that star-defects can be a nucleation point of single-SSFs that can expand at the core of the defect. Newly found secondary dislocation arrays extending over a few centimeters away are found to be emanating from the primary arms of the star defect. The presence of such dislocation walls and the expansion of single-SSFs will affect the yield of numerous die on a wafer. Further understanding of the formation mechanism of stacking faults generated from star-defects as provided in this study helps understand their effect on SiC-based devices, which is crucial to assess device reliability.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Correlating work hardening with co-activation of stacking fault strengthening and transformation in a high entropy alloy using in-situ neutron diffraction

Transformation induced plasticity (TRIP) leads to enhancements in ductility in low stacking fault energy (SFE) alloys, however to achieve an unconventional increase in strength simultaneously, there must be barriers to dislocation motion. While stacking faults (SFs) contribute to strengthening by impeding dislocation motion, the contribution of SF strengthening to work hardening during deformation is not well understood; as compared to dislocation slip, twinning induced plasticity (TWIP) and TRIP. Thus, we used in-situ neutron diffraction to correlate SF strengthening to work hardening behavior in a low SFE Fe 40 Mn 20 Cr 15 Co 20 Si 5 (at%) high entropy alloy, SFE ~ 6.31 mJ m –2 . Cooperative activation of multiple mechanisms was indicated by increases in SF strengthening and γ-f.c.c. → ε-h.c.p. transformation leading to a simultaneous increase in strength and ductility. The present study demonstrates the application of in-situ, neutron or X-ray, diffraction techniques to correlating SF strengthening to work hardening.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Stacking faults and alternate crystal structures for the shape-memory alloy NiTi

Here, we use ab initio calculations to study the role of stacking faults in connecting the high-temperature B2 and the theoretically predicted low-temperature B33 NiTi phases. In contrast with prior work, we describe the B 2 → B 33 phase transformation in terms of alternate bilayer shifts by 1 2 [100] on the ( 011 ) B 2 plane, obtaining a viable pathway; the same mechanism could also work with the B19 parent phase. We then examine B33-like structures built from alternate stacking sequences of B19 bilayers, constructed to have monoclinic tilt angles close to the experimentally reported NiTi B19' martensite, and find four low-energy stacking-fault variants with energies 5.8–8.5 meV/atom above the calculated B19' martensite structure, suggesting that such structures might appear as a part of the NiTi martensite phase at low temperatures. Investigating further the occurrence of specific coordinated planar shifts in NiTi systems, we report a dynamically stable NiTi B27 phase and find that it is only 1.2 meV/atom above the calculated B33 ground-state structure, thus having a potential to also play a role in NiTi martensitic phase transformation.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Formation of I 1 stacking fault by deformation defect evolution from grain boundaries in Mg

I 1 stacking faults (SFs) in Mg alloys are regarded as the nucleation sites of $\langle \text{c+a} \rangle$ dislocations that are critical for these alloys to achieve high ductility. Previously it was proposed that the formation of I 1 SFs requires the accumulations of a large number of vacancies, which are difficult to achieve at low temperatures. In this study, molecular dynamics (MD) and molecular statics (MS) simulations based on empirical interatomic potentials were applied to investigate the deformation defect evolutions from the symmetric tilt grain boundaries (GBs) in Mg and Mg-Y alloys under external loading along $\langle c \rangle$-axis. The results show the planar faults (PFs) on Pyramidal I planes first appear due to the nucleation and glide of $\langle {\frac {1}{2}}c + p\rangle$ partial dislocations from GBs, where $\langle p\rangle$ = ${\frac {1}{3}} \langle10\bar{1}0\rangle$. These partial dislocations with pyramidal PFs interact with other defects, including pyramidal PFs themselves, GBs, and $\langle p\rangle$ partial dislocations, generating a large amount of I 1 SFs. Detailed analyses show the nucleation and growth of I 1 SFs are achieved by atomic shuffle events and deformation defect reactions without the requirements of vacancy diffusion. Our simulations also suggest the Y clusters at GBs can reduce the critical stress for the formation of pyramidal PFs and I 1 SFs, which provide a possible reason for the experimental observations that Y promotes the $\langle{\text{c+a}}\rangle$ dislocation activities.

36 MATERIALS SCIENCE↗
DOE OSTI2025

The impact of nickel concentration and stacking fault energy on deformation mechanisms in high-purity austenitic Fe-Cr-Ni alloys

Understanding how composition affects deformation mechanisms in austenitic stainless steels is essential for developing accurate predictive models of stress-induced failures and stress corrosion cracking. Nickel (Ni), an element classified as a critical element, plays a crucial role in these processes. It is important to examine how Ni concentration influences stacking fault energy (SFE) and, consequently, the deformation mechanisms of austenitic stainless steels. However, in commercial stainless steels, the effects of other alloying elements and impurities can obscure Ni's role, complicating efforts to isolate its impact. Here, in this study, we use two high-purity Fe-Cr-Ni alloys to investigate how Ni concentration and SFE interact to alter deformation mechanisms and induce martensitic transformation. By combining in situ synchrotron X-ray diffraction (XRD) tensile testing and post-mortem electron microscopy with density functional theory simulations, we gain precise insights into these phenomena. We find that the Fe18Cr10Ni (wt%) alloy, with its low SFE, exhibits higher stacking fault probability, deformation-induced martensitic transformation, and a lesser increase in dislocation density with plastic strain. In contrast, the Fe18Cr14Ni (wt%) alloy, with its higher SFE, shows enhanced deformation twinning and greater dislocation density with increasing strain. These findings from high-purity ternary alloys provide valuable insights that can guide the search for alternative elements to replace Ni while achieving similar effects on phase stability and deformation behavior.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

Ab-Initio Study of Stacking Fault Segregation Behavior in Ni-based Superalloys at High Temperatures

Ni-based superalloys demonstrate extraordinary creep properties compared to traditional metallic systems due to the formation of L12 (γ’) precipitates. Despite experimental evidence of alloying element segregation to the stacking faults, prior ab-initio efforts indicated repulsion of Nb from superlattice intrinsic stacking faults (SISFs) . Due to the importance of this element in key strengthening mechanisms, we developed a new technique to account for multi-component segregation behavior at temperature combining ab-initio molecular dynamics (AIMD) and Monte-Carlo (MC) simulations. Using this technique, we replicated experimentally observed segregation behavior of Nb, Co, and Ti to the SISF in L12 (Figure 1). Furthermore, we investigated the co-segregation behaviors of individual pairs of alloying elements to determine the interaction effects which lead to this segregation behavior in the full alloy system. By simulating the reduced-chemistry models using our approach, we reconciled previous ab-initio calculations demonstrating repulsion of Nb from the SISF and the experimentally observed segregation behavior.

Molecular Dynamics↗
DOE OSTI2019

Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers

Thin gallium phosphide layers were deposited on (0 0 1) Silicon surfaces via organometallic vapor phase epitaxy and characterized by electron channeling contrast imaging (ECCI). Stacking fault pyramids at a density of up to 6 x 10 7 cm -2 were identified in the GaP nucleation layer by varying the diffraction conditions. We show that these defects originate at the GaP/Si interface and propagate on all four {1 1 1} planes. We observed that such stacking fault pyramids interact with the gliding of misfit dislocations during lattice-mismatched growth and enhance the threading dislocation density. The initial pulsing of TEGa and TBP during the nucleation of GaP on Silicon has been found to strongly influence the formation of those pyramidal defects. Changing the number of pulse cycles allowed us to lower their density by two orders of magnitude from 6 x 10 7 cm -2 to 4 x 10 5 cm -2 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Decoupling between Shockley partials and stacking faults strengthens multiprincipal element alloys

We report that mechanical properties are fundamental to structural materials, where dislocations play a decisive role in describing their mechanical behavior. Although the high-yield stresses of multiprincipal element alloys (MPEAs) have received extensive attention in the last decade, the relation between their mechanistic origins remains elusive. Our multiscale study of density functional theory, atomistic simulations, and high-resolution microscopy shows that the excellent mechanical properties of MPEAs have diverse origins. The strengthening effects through Shockley partials and stacking faults can be decoupled in MPEAs, breaking the conventional wisdom that low stacking fault energies are coupled with wide partial dislocations. This study clarifies the mechanistic origins for the strengthening effects, laying the foundation for physics-informed predictive models for materials design.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Pinning dislocations in colloidal crystals with active particles that seek stacking faults

There is growing interest in functional, adaptive devices built from colloidal subunits of micron size or smaller. A colloidal material with dynamic mechanical properties could facilitate such microrobotic machines. Here we study via computer simulation how active interstitial particles in small quantities can be used to modify the bulk mechanical properties of a colloidal crystal. Passive interstitial particles are known to pin dislocations in metals, thereby increasing resistance to plastic deformation. We extend this tactic by employing anisotropic active interstitials that travel super-diffusively and bind strongly to stacking faults associated with partial dislocations. We find that: (1) interstitials that are effective at reducing plasticity compromise between strong binding to stacking faults and high mobility in the crystal bulk. (2) Reorientation of active interstitials in the crystal depends upon rotational transitions between high-symmetry crystal directions. (3) The addition of certain active interstitial shapes at concentrations as low as 60 per million host particles (0.006%) can create a shear threshold for dislocation migration. This work demonstrates how active materials in a dense matrix can locally sense their environment and lead to bulk property changes.

36 MATERIALS SCIENCE↗
DOE OSTI2026

In situ studies on heavy ion irradiation and partial oxidation induced stacking faults and nanograins in tungsten nanolaminates

Understanding the microstructural evolution of tungsten (W) under extreme irradiation environments is critical for its application as a plasma-facing material in future fusion reactors. Heavy ion irradiation study offers expedited damage accumulation and thus allows irradiation tolerance property prediction in a short period of time. In this study we explore in situ Kr ion irradiation of W nanolaminates at 800 °C and uncover a complex interplay of irradiation-induced transformations, including the emergence of stacking faults, nanograin formation, and generation of thickened grain boundaries defined as GB regions with the thickness of up to 15 nm. High-resolution transmission electron microscopy studies reveal the formation of extended planar faults and a metastable hexagonal close-packed (hcp) phase within the body-centered cubic (bcc) matrix. These structural transitions are facilitated by irradiation-induced shear. They are further stabilized by the presence of oxygen, which promotes stacking fault formation and vacancy trapping. Elevated temperatures enhance defect mobility, enabling dynamic recrystallization into ultrafine grains and the thickening of GBs due to defect absorption and impurity segregation. These findings unravel non-equilibrium phase transformation pathways in heavy ion irradiated W and highlight the critical role of impurity-mediated defect dynamics in governing its radiation tolerance properties.

Wazeer, Adil [Purdue University]↗
DOE OSTI2026

Shock-induced phase transitions and stacking fault formation in additively manufactured eutectic high-entropy alloy Ni 40 Co 20 Fe 10 Cr 10 Al 18 W 2

Ni 40 Co 20 Fe 10 Cr 10 Al 18 W 2 additively manufactured using laser powder bed fusion (LPBF) is among the toughest as-built alloys reported and is a promising candidate for use in extreme environments. However, its behavior under multi-megabar pressure regimes remains unexplored. We used femtosecond in situ X-ray diffraction to investigate the shock response of LPBF Ni40Co20Fe10Cr10Al18W2 under laser-driven shock compression and release. Our results reveal that the initial dual-phase face-centered + body-centered structure transforms to a single face-centered phase over a wide pressure range of 84±10 to 277±55 GPa, followed by a transition to a single body-centered phase at 431±48 GPa. We establish the Hugoniot equation-of-state of LPBF Ni 40 Co 20 Fe 10 Cr 10 Al 18 W 2 and compare it to the benchmark alloy AlCoCrFeNi 2.1 , demonstrating the effects of W-doping and increased Al content. High stacking fault probabilities, close to those measured in Au and Ag, are observed upon compression. A portion of the stacking faults are annihilated upon release to ambient pressure.

36 MATERIALS SCIENCE↗