Performance of direct methanol fuel cells with sputter-deposited anode catalyst layers
Performance of direct methanol fuel cells with sputter-deposited Pt-Ru anodes was investigated.
Oxide↗
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Results for “Sputter deposition”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Sputter deposition of ultrathick Bi coatings onto rotating substrates for inertial confinement fusion
Sputter-deposited Bi is a potential candidate material for the production of inertial confinement fusion (ICF) hohlraums, which are sphero-cylindrical canisters that serve as the housing for hydrogen-fuel-filled capsules in ICF implosions. The fabrication of hohlraums involves deposition onto rotating sphero-cylindrical substrates and, hence, requires an understanding of oblique angle deposition phenomena. Here, we systematically study the effect of dynamic substrate tilt on properties of Bi films deposited onto rotating planar substrates. Results show that film morphology, porosity, and electrical resistivity depend on substrate tilt. In comparison with films deposited onto substrates adhered to a stationary sample holder, films deposited on rotating substrates have more uniform microstructure with fewer void defects. Based on Monte Carlo simulations, these changes in film morphology and microstructure are attributed to averaging and geometric effects related to sample position and rotation. In conclusion, the fabrication of an ∼ 50-µm-thick Bi film on a rotating sphero-cylindrical mandrel demonstrates a significant step toward the production of Bi hohlraums.
Bismuth↗
Adherence of ion beam sputter deposited metal films on H-13 steel
An electron bombardment argon ion source sputter deposited 17 metals and metal oxides on H-13 steel. The films ranged 1 to 8 micrometers in thickness and their adherence was generally greater than the capacity of the measuring device; adherence quality depended on proper precleaning of the substrate before deposition. N2 or air was introduced for correct stoichiometry in metallic compounds. Au, Ag, MgO, and Ta5Si3 films 8 microns thick have bond strength equal to 1 micron coatings; the bond strength of pure metallic films up to 5 microns thick was greater than the epoxy to film bond (8000 psi). The results of exposures of coated material to temperatures up to 700 C are presented.
Mirtich, M. J.↗
\A Gravity-Related Transport in Reactive Off-Axis Sputtering Deposition
An experiment was designed to investigate the transport characterization of reactive off- axis sputtering deposition. Three transport regions were observed when the growth pressures vary from 5 mtorr to 150 mtorr. A new gravity-related phenomenon was revealed in film growth at relatively high growth pressures. This effect is related to the collision process or thermalization of transport species. This study also suggests a design for the substrate holder orientation in the off-axis sputtering system.
Zhu, Shen↗
Pressure Effect in ZnO Films Using Off-Axis Sputtering Deposition
ZnO films are deposited on (0001) sapphire, (001) Si and quartz substrates using the off-axis reactive magnetron sputtering deposition. Based on film thickness measurements, three transport regions of sputtered particles are observed when films are deposited in the pressure regions of 5 mtorr - 150 mtorr. X-ray diffraction, scanning probes microscopy, and electrical measurements are also used to characterize these films. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. The epitaxial films deposited at high pressure reveal a flat surface with some hexagonal facets. The density of hexagonal facets decreases when the growth pressure is reduced. The resistivity of these epitaxial films also depends on the growth pressures. A relationship between the pressure effects and film properties are discussed.
Zhu, Shen↗
Adherence of ion beam sputter deposited metal films on H-13 steel
An electron bombardment argon ion source was used to sputter deposit 17 different metal and metal oxide films ranging in thickness from 1 to 8 micrometers on H-13 steel substrates. The film adherence to the substrate surface was measured using a tensile test apparatus. Comparisons in bond strength were made between ion beam, ion plating, and RF deposited films. A protective coating to prevent heat checking in H-13 steel dies used for aluminum die casting was studied. The results of exposing the coated substrates to temperatures up to 700 degrees are presented.
Mirtich, M. J.↗
Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low Earth orbit
Ion beam sputter-deposited thin films of Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of a fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low Earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.
Banks, B. A.↗
Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low earth orbit
Ion beam sputter-deposited thin films at Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board Shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.
Banks, B. A.↗
Fabrication of nanobaskets by sputter deposition on porous substrates and uses thereof
A method of producing a nanobasket and the applications or uses thereof. The method includes the steps of providing a substrate with at least one (1) pore having diameters of about one (1) nanometer to about ten (10) micrometers. Material is deposited by sputter-coating techniques along continuous edges of the pores to form a capped or partially capped nanotube or microtube structure, termed a nanobasket. Either a single material may be used to form nanobaskets over the pores or, alternately, a layered structure may be created wherein an initial material is deposited followed by one or more other materials to form nanobaskets over the pores.
Johnson, Paige Lea↗
CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe
Results on CuInSe2/ZnSe thin-film heterojunction photovoltaic devices are presented. By the use of reactive magnetron cosputtering of Zn and In dopant in Ar/H2Se, ZnSe thin films have been deposited on glass and conducting SnO2-coated glass substrates with resistivity as low as 20 ohm-cm at deposition temperatures as low as 120 C. Preliminary ZnSe depositions onto CuInSe2 films supplied by industrial laboratories are encouraging. Reactive-sputter-deposition parameters for ZnSe have yet to be optimized for CuInSe2 substrates; however, open-circuit voltages as high as 430 mV were obtained. The highest short-circuit current density, as determined by spectral response weighted for AM1.5 global insulation, was 37.4 mA/sq cm. In all cases, a highly conductive ZnO film was overcoated onto the ZnSe to reduce the overall sheet resistance.
Nouhi, A.↗
High-rate magnetron sputter deposition of low-stress boron carbide films on tilted substrates
Boron carbide is attractive for several applications, including nuclear fuel capsules for inertial confinement fusion (ICF). The fabrication of ICF capsules involves the deposition of ultrathick coatings with density and thickness uniformity on submicron length scales on non-planar (spherical) substrates. Such a deposition requires control of the deposition rate, residual stress, and film microstructure. Here, we systematically study the direct-current magnetron sputter deposition of B 4 C coatings with a full-face-erosion magnetron source as a function of substrate tilt and Ar working gas pressure. Film properties are correlated with results of plasma diagnostics and predictions of Monte Carlo simulations of ballistic sputtering and gas-phase transport. The fabrication of low-stress amorphous B 4 C films with deposition rates of 7μm/h is demonstrated.
Kawasaki, K. [Lawrence Livermore National Laborato↗
Influence of process parameter variation on the reflectivity of sputter-deposited W-C multilayer diffraction gratings
Multilayer W-C diffraction gratings with nominal d spacings of 35 A have been fabricated by magnetron sputter deposition. The peak and integrated reflectivities of these films have been measured with Al K-alpha X-rays and compared to theoretical values. The rms surface roughness has been evaluated. The influence of several sputtering-system process parameters on the reflectivities has been investigated.
Sager, B.↗
Orientation Effects in ZnO Films Using Off-Axis Sputtering Deposition
ZnO is a wide-band-gap oxide material and has been used in numerous applications. It is also a good substrate for fabricating GaN-based (a blue laser candidate) devices. Off-axis sputtering technique is one of the best techniques in synthesizing oxide materials because negative ion bombardment and particle kinetic energy is greatly reduced when adatoms condense on substrates. Since the sputtered material from the target arrive on the substrate surface at a 90 deg. configuration, which differs from the normal sputtering geometry, it is expected that the film uniformity and composition distributions will be affected. However, the details of these properties and mechanisms have not been well studied. ZnO films are synthesized on (0001) sapphire and quartz substrates by off-axis sputtering deposition in various oxygen/argon mixture ratios and pressures at different temperatures. Substrates and sputtering sources are placed at three different orientations that are orthogonal to each other. The normal direction of a substrate is parallel to the gravity vector and the other is perpendicular to it. Film thickness profiles at different growth orientations are determined using a profimeter. All films grown at high temperatures have highly textured structures on quartz substrates and epitaxially grow on sapphire substrates. Because of this process, the film surface is very smooth. X-ray diffraction, scanning probe microscopy, and Fourier transfer infrared spectroscopy, and electrical measurements will be used to characterize these films. Detailed results will be discussed in the presentation.
Zhu, Shen↗
An experimental investigation of fractionation by sputter deposition
Artificial glass targets composed of elements varying widely in atomic weight were irradiated at an angle of incidence of 45 deg by 2-keV hydrogen ions at a current density of .33 mA/sq cm, and sputtered atoms were caught on a molybdenum film. Analyses of the sputter-deposited films and unsputtered target glasses were carried out by electron microprobe. The backward-sputtered component was found to be enriched in elements of low atomic weight, while the forward-sputtered component was enriched in heavy atoms. These results indicate that at the lunar surface lighter elements and isotopes would tend to be ejected in backward directions, escaping directly through the openings which admit bombarding ions without first striking an adjacent grain surface; heavy elements and isotopes would be forward-sputtered deeper into the soil and be preferentially retained, contributing to the reported enrichments of heavy elements and isotopes. Additional results show that the binding energy of an element in its oxide form influences the sticking coefficient of a sputtered atom; elements of low binding energy are likely to desorb, while elements of high binding energy tend to stick to the first bounce surface.
Paruso, D. M.↗
Magnetron Sputtering Deposits Corrosion-Resistant Alloy
Dense, amorphous, metallic film resists corrosion attack by acid. Coatings thermally stable up to 800 degrees C and made corrosion resistant by proper choice of sputtering deposition conditions. Protective, corrosionresistant coatings applied to process equipment that comes in contact with aqueous, neutral, or acidic solutions in chemical, petroleum, and paper industries, in wastewater treatment, and in heat exchangers.
Khanna, S. K.↗
Synthesis of ZnO:As Films Using Off-Axis Sputtering Deposition
As a novel oxide semiconductor material, ZnO is interesting for use in many applications. For fabricating electronic devices, it is important to have n- and p- type ZnO materials. Arsenic has been proven to be one of the p-type dopants for ZnO materials. However, information in studying the ZnAsO ternary compound films has been scarce. In order to investigate the morphology, structure and electrical properties of ZnAsO ternary compounds, ZnO:As films have been synthesized using off-axis sputtering deposition on various substrates including (100) Si and (0001) sapphire crystals. Films are grown under various growth conditions. ZnO:As targets with the atomic weight ratios of arsenic to zinc from 0.01 to 0.10 are used for film synthesis. The growth temperatures and pressures range from 350 to 550C and 5 to 150 mTorr, respectively. Argon to oxygen gas ratio for film growth is varied to examine the film quality as well. Film surface morphology, crystal structure, and compositions, are characterized using atomic force microscopy, x-ray diffraction, and energy dispersive spectroscopy, respectively. The compositions of target material and ZnO:As films grown under various conditions are then assessed. The electrical properties were also measured. The detail of these measurements will be discussed in the presentation.
Zhu, Shen↗
Ion beam sputter deposited zinc telluride films
Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.
Gulino, D. A.↗
AES study on the chemical composition of ferroelectric BaTiO3 thin films RF sputter-deposited on silicon
AES depth profiling data are presented for thin films of BaTiO3 deposited on silicon by RF sputtering. By profiling the sputtered BaTiO3/silicon structures, it was possible to study the chemical composition and the interface characteristics of thin films deposited on silicon at different substrate temperatures. All the films showed that external surface layers were present, up to a few tens of angstroms thick, the chemical composition of which differed from that of the main layer. The main layer had stable composition, whereas the intermediate film-substrate interface consisted of reduced TiO(2-x) oxides. The thickness of this intermediate layer was a function of substrate temperature. All the films showed an excess of barium at the interface. These results are important in the context of ferroelectric phenomena observed in BaTiO3 thin films.
Dharmadhikari, V. S.↗