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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Terahertz inverse spin Hall effect in spintronic nanostructures with various ferromagnetic materials

Bilayers of ferromagnetic and heavy metal nanolayers excited with femtosecond laser pulses emit subpicosecond bursts of electromagnetic radiation with spectral frequencies up to several THz. We fabricated such spintronic THz emitters containing various ferromagnetic materials with vastly different magnetic remanence, saturation magnetization, and coercive fields. In all cases, the THz amplitude versus magnetic-field dependence follows the independently measured magnetization hysteresis loops and the THz polarization direction is perpendicular to the sample’s magnetization M, both consistent with the inverse spin Hall effect (ISHE) as the physical origin. The mV-level signals of observed THz transient also favor the ISHE over the anomalous Nernst effect (ANE). The M(T) variation governs the temperature dependence of the THz generation. Emitters with weakly remanent ferromagnets are magnetic-field tunable, while moderately and strongly remanent ferromagnets, once magnetized, allow intense THz generation even without an external field, nevertheless exhibiting low susceptibility to magnetic perturbations if the hysteresis loop is square. Hence, exploiting the magnetic properties of the ferromagnetic layer enables tailoring of weakly temperature-dependent spintronic THz emitters. Finally, we explored the applicability of perovskite oxide materials such as La-Sr-Mn-O (LSMO) for THz transient generation. We detected weak (<40-μV amplitude) THz emissions from both LSMO/Au and pure LSMO nanostructures with no sign flip upon the sample reversal. Furthermore, we excluded the ISHE and believe it was likely governed by the ANE in the thick-film regime, although we cannot exclude the transient demagnetization mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Discrete quantum geometry and intrinsic spin Hall effect

We show that the quantum geometry of the Fermi surface can be numerically described by a three-dimensional discrete quantum manifold. This approach not only avoids singularities in the Fermi sea, but it also enables the precise computation of the intrinsic Hall conductivity resolved in spin, as well as any other local properties of the Fermi surface. The method assures numerical accuracy when the Fermi level is arbitrarily close to singularities, and it remains robust when Kramers degeneracy is protected by symmetry. Furthermore, the approach is demonstrated by calculating the anomalous Hall and spin Hall conductivities of a two-band lattice model of a Weyl semimetal and a full-band ab initio model of zinc-blende GaAs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Optical spin hall effect in exciton–polariton condensates in lead halide perovskite microcavities

An exciton–polariton condensate is a hybrid light–matter state in the quantum fluid phase. The photonic component endows it with characters of spin, as represented by circular polarization. Spin-polarization can form stochastically for quasi-equilibrium exciton–polariton condensates at parallel momentum vector k|| ∼ 0 from bifurcation or deterministically for propagating condensates at k|| > 0 from the optical spin-Hall effect (OSHE). Here, we report deterministic spin-polarization in exciton–polariton condensates at k|| ∼ 0 in microcavities containing methylammonium lead bromide perovskite (CH3NH3PbBr3) single crystals under non-resonant and linearly polarized excitation. We observe two energetically split condensates with opposite circular polarizations and attribute this observation to the presence of strong birefringence, which introduces a large OSHE at k|| ∼ 0 and pins the condensates in a particular spin state. Such spin-polarized exciton–polariton condensates may serve not only as circularly polarized laser sources but also as effective alternatives to ultracold atom Bose–Einstein condensates in quantum simulators of many-body spin–orbit coupling processes.

Chemistry↗
DOE OSTI2023

Recent progress in MnBi2 n Te3 n +1 intrinsic magnetic topological insulators: crystal growth, magnetism and chemical disorder

ABSTRACT The search for magnetic topological materials has been at the forefront of condensed matter research for their potential to host exotic states such as axion insulators, magnetic Weyl semimetals, Chern insulators, etc. To date, the MnBi2nTe3n+1 family is the only group of materials showcasing van der Waals-layered structures, intrinsic magnetism and non-trivial band topology without trivial bands at the Fermi level. The interplay between magnetism and band topology in this family has led to the proposal of various topological phenomena, including the quantum anomalous Hall effect, quantum spin Hall effect and quantum magnetoelectric effect. Among these, the quantum anomalous Hall effect has been experimentally observed at record-high temperatures, highlighting the unprecedented potential of this family of materials in fundamental science and technological innovation. In this paper, we provide a comprehensive review of the research progress in this intrinsic magnetic topological insulator family, with a focus on single-crystal growth, characterization of chemical disorder, manipulation of magnetism through chemical substitution and external pressure, and important questions that remain to be conclusively answered.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Giant interfacial spin Hall angle from Rashba-Edelstein effect revealed by the spin Hall Hanle process

The Rashba-Edelstein effect (REE), which generates interfacial spin polarization and subsequent spin current, is a compelling spin-charge conversion mechanism for spintronic applications, since it’s not limited by the elemental spin-orbit couplings. In this work we demonstrate REE at Pt/ferroelectric interfaces by showing a positive correlation between polarization and effective spin Hall angle in the recently elucidated spin Hall Hanle effects (SHHE), in which a Larmor precession of spin polarization in a diffusion process from the interface manifest as magnetoresistance and Hall effect. We show that REE leads to a large enhancement of the effective spin Hall angle of ferroelectric interface Pt/h-LuFeO 3 compared with that of Pt/Al 2 O 3 , without obvious differences in the spin relaxation time. Modeling using SHHEs involving REE as an additional source of interfacial polarization suggests that REE can lead to an interfacial spin Hall angle (0.4 ± 0.1) in Pt/h-LuFeO 3 that is one order of magnitude larger than the bulk value of Pt. Our results demonstrate that a ferroelectric interface can produce large spin-charge conversion and that SHHEs are a sensitive tool for characterizing interfacial spin-transport properties.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Large spin-to-charge conversion in ultrathin gold-silicon multilayers

Investigation of the spin Hall effect in gold has triggered increasing interest over the past decade, since gold combines the properties of a large bulk spin-diffusion length and strong interfacial spin-orbit coupling. However, discrepancies between the values of the spin Hall angle of gold reported in the literature have brought into question the microscopic origin of the spin Hall effect in Au. Here, we investigate the thickness dependence of the effective spin-charge conversion efficiency in single Au films and ultrathin Au/Si multilayers by nonlocal transport and spin-torque ferromagnetic resonance measurements. We show that the inferred effective spin-charge conversion efficiency is strongly enhanced in ultrathin Au/Si multilayers, reaching exceedingly large values of 0.99 ± 0.34 when the thickness of the individual Au layers is scaled down to 2 nm. These findings reveal the coexistence of a strong interfacial spin-to-charge conversion effect, which becomes dominant in ultrathin Au, and bulk spin Hall effect with a relatively low bulk spin Hall angle of 0.012 ± 0.005. Furthermore, our experimental results suggest the key role of the intrinsic spin Hall effect enhancement along with a strong interfacial spin-orbit coupling-related effect in the large spin-to-charge conversion in ultrathin Au.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effect of the inversion symmetry breaking on the orbital Hall effect: A model study

The orbital Hall effect (OHE) is the transverse flow of orbital moment in a solid in response to an applied electric field, analogous to the flow of spin moment in the spin Hall effect (SHE). Although the effect has not been directly observed, there is ample indirect evidence for its existence in a number of experiments. Here, we show that the OHE is enhanced in solids with broken inversion symmetry, which may be more suitable to observe the effect. The mechanism of the OHE is fundamentally different in solids with inversion symmetry, where the orbital moment is quenched in the Brillouin zone (BZ), from that in a solid with broken inversion symmetry, where an intrinsic orbital moment is already present, the motion of which under the applied electric field could lead to a robust OHE. Using a tight-binding model Hamiltonian of a simple cubic lattice with two atoms in the unit cell, we study the effect of the inversion symmetry breaking on the OHE. We show that with the increase in the strength of the broken symmetry, the magnitude of the intrinsic orbital moment in the Brillouin zone increases. This, in turn, enhances the orbital Hall conductivity, in particular, the part that is directly proportional to the orbital moment in the BZ, which we call the “noncentrosymmetric contribution.” If the spin-orbit coupling is present, which couples the orbital and spin moments, the OHE leads to the SHE, which also becomes enhanced by the broken inversion symmetry. Furthermore, our work has important implications for experimenters, suggesting that noncentrosymmetric solids may be more suitable for direct observation of the OHE.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Comprehensive demonstration of spin Hall Hanle effects in epitaxial Pt thin films

In this work, we demonstrate a nonlinear Hall effect due to the boundary spin accumulation in Pt films grown on Al 2 O 3 substrates. This Hall effect and the previously demonstrated Hanle magnetoresistance provide a complete picture of the spin-precession control of the spin and charge transport at the boundary of a spin-orbit coupled material, which we refer to as spin Hall Hanle effects (SHHE). We also show that the SHHE can be employed to measure the spin diffusion length, the spin Hall angle, and the spin relaxation time of heavy metal without the need of magnetic interface or the input from other measurements. The comprehensive demonstration of SHHE in such a simple system suggests they may be ubiquitous and needs to be considered for unraveling the spin and charge transport in more complex thin-film structures of spin-orbit coupled materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium Green function approach

The spin-mixing conductance (SMC) is a key quantity determining efficiency of spin transport across interfaces. Thus, knowledge of its precise value is required for accurate measurement of parameters quantifying numerous effects in spintronics, such as spin-orbit torque, spin Hall magnetoresistance, spin Hall effect, and spin pumping. However, the standard expression for SMC, provided by the scattering theory in terms of the reflection probability amplitudes, is inapplicable when strong spin-orbit coupling (SOC) is present directly at the interface. This is the precisely the case of topological-insulator/ferromagnet and heavy-metal/ferromagnet interfaces of great contemporary interest. We introduce an approach where first-principles Hamiltonian of these interfaces, obtained from noncollinear density functional theory (ncDFT) calculations, is combined with charge-conserving Floquet-nonequilibrium-Green-function formalism to compute directly the pumped spin current $I^{S_z}_L$ into semi-infinite left lead of two-terminal heterostructures Cu/X/Co/Cu or Y/Co/Cu—where X = Bi 2 Se 3 and Y = Pt or W—due to microwave-driven steadily precessing magnetization of the Co layer. This allows us to extract an effective SMC as a prefactor in $I^{S_z}_L$ versus precession cone angle θ dependence, as long as it remains the same, $I^{S_z}$ ∝ sin 2 θ , as in the case where SOC is absent. By comparing calculations where SOC in switched off versus switched on in ncDFT calculations, we find that SOC consistently reduces the pumped spin current and therefore the effective SMC.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Applications of quantum materials in nuclear physics experiments (Final Report)

The goals of this project are to search for hypothesized spin-hall effects of neutrons and variants of neutron-electron hybrid spin hall effects in quantum materials with strong spin-orbit-coupling (SOC) – such as: • Deflection of neutrons dependent on spin (polarization) states (a); • Electrical current induced electron spin polarization or (dynamically polarized) nuclear spin polarization (as suggested in PI’s prior work) may affect polarization states of transmitted or reflected neutron beam • Spin polarized neutrons transfer some spin angular momenta to electrons, which get converted to electronic charge voltage via electronic inverse spin Hall effect (b), which if realized, offers an electrical method to detect neutron spins.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Topological Magnets: Functions Based on Berry Phase and Multipoles

Macroscopic responses of magnets are often governed by magnetization and, thus, have been restricted to ferromagnets. However, such responses are strikingly large in the newly developed topological magnets, breaking the conventional scaling with magnetization. Taking the recently discovered antiferromagnetic (AF) Weyl semimetals as a prime example, we highlight the two central ingredients driving the significant macroscopic responses: the Berry curvature enhanced because of nontrivial band topology in momentum space, and the cluster magnetic multipoles in real space. The combination of large Berry curvature and multipoles enables large macroscopic responses such as the anomalous Hall and Nernst effects, the magneto-optical effect, and the novel magnetic spin Hall effect in antiferromagnets with negligible net magnetization, but also allows us to manipulate these effects by electrical means. Furthermore, nodal-point and nodal-line semimetallic states in ferromagnets may provide the strongly enhanced Berry curvature near the Fermi energy, leading to large responses beyond the conventional magnetization scaling. These significant properties and functions of the topological magnets lay the foundation for future technological development such as spintronics and thermoelectric technology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Exploring nonlinear Rashba effect and spin Hall conductivity in Janus MXenes W 2 ⁢CO ⁢𝑋 (𝑋=S, Se, Te)

Rashba spin-orbit coupling (RSOC) facilitates spin manipulation without relying on an external magnetic field, opening up exciting possibilities for advanced spintronic devices. In this paper, we examine the effects of crystal momentum (𝑘) nonlinearity and anisotropy on the conventional Rashba effect, with a particular focus on their impact on the spin Hall conductivity (SHC) in a newly predicted family of 2D Janus materials, W 2 ⁢CO⁢𝑋 (𝑋 =S, Se, Te). Using first-principles density functional theory calculations, we confirm the dynamical and mechanical stability of the studied 2D materials. Strikingly, this materials family exhibits pronounced nonlinear Rashba spin splitting at the Γ point of Brillouin zone near the Fermi level, which cannot be adequately described by the linear-𝑘 Rashba model. Therefore, third-order momentum contributions (𝑘 3 ) must be incorporated into the Rashba Hamiltonian. Our analysis reveals that among the studied systems, W 2 ⁢COS exhibits the highest 𝑘 3 contribution of −45.9 eV Å 3 , despite having the lowest linear Rashba constant. Here, a detailed analysis of electronic structure reveals topologically nontrivial behavior in these 2D materials, yielding sizable SHC that is primarily governed by the nonlinear Rashba effect. Notably, these materials also exhibit large spin Hall angle (0.018–2.5 at E 𝐹 ), which is comparable to that of in bulk topological insulators like Bi 2 ⁢Se 3 and Bi 2 ⁢Te 3 , and surpassing those in narrow bandgap bulk semiconductors GeTe and SnTe, as well as heavy metals such as Pt. Sizable SHC, large spin Hall angles, and the ability to tune SHC via electric fields without altering the topological properties, rooted in the crystal field splitting, underscore the potential of these materials for spintronic applications.

Electronic structure↗
DOE OSTI2020

Enhancement of the spin–orbit torque efficiency in W/Cu/CoFeB heterostructures via interface engineering

Here, the spin-torque ferromagnetic resonance signal and the spin Hall magnetoresistance induced by the spin Hall effect of W/Cu/CoFeB heterostructures with different Cu layer thicknesses (t Cu ) have been systemically studied. The effective spin mixing conductance $g^{↑↓}_{eff}$, the interfacial spin transparency T, and the real spin–orbit torque efficiency ( J s J c ) real show a significant increase compared to the W/CoFeB heterostructure. ( J s J c ) real reaches its maximum of ~0.54, increased up to ~50% at the optimized tCu ~ 0.52 nm according to our theoretical prediction. More importantly, the intrinsic spin Hall angle of W, $θ^{int}_{SH}$ ~ 0.79 ± 0.20, has also been obtained after the correction of the inverse spin Hall effect and T. This suggests that the Cu insertion improves the interface quality and, therefore, assists the spin transport in the heterostructures, which potentially improves the performance of next-generation spintronic devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Observation of spatially resolved Rashba states on the surface of CH 3 NH 3 PbBr 3 single crystals

Hybrid organic-inorganic perovskites (HOIPs) are prime candidates for studying Rashba effects due to the heavy metal and halogen atoms in their crystal structure coupled with predicted inversion symmetry breaking. Nevertheless, observation of the Rashba effect in cubic CH 3 NH 3 PbBr 3 single crystals that possess bulk inversion symmetry is the subject of extensive debate due to the lack of conclusive experiments and theoretical explanations. In this work, we provide experimental evidence that Rashba state in cubic CH 3 NH 3 PbBr 3 single crystals at room temperature occurs exclusively on the crystal surface and depends on specific surface termination that results in local symmetry breaking. We demonstrate this using a suite of spatially resolved and depth-sensitive techniques, including circular photogalvanic effect, inverse spin Hall effect, and multiphoton microscopy, that are supported by first principle calculations. Our work suggests using surface Rashba states in these materials for spintronic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗