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Radiation tests of SEP solar cells
Solar cells specially designed for Solar Electric Propulsion (SEP) were tested with radiation fluences up to 10 to the 12th power protons having energies of 1.5, 1.0, and 0.5 MeV, and with fluences up to 10 to the 16th power electrons having 1.0 MeV energy. Spectrolab cells having a back-surface field were also irradiated with the same particles and fluences. Cell performances are described by curves in which normalized and absolute values of maximum power, maximum-power voltage, short-circuit current, and open-circuit voltage are plotted as a function of fluence.
A NEW RADIATION DAMAGE RESISTANT SOLAR CELL
Solar cell resistant to radiation damage - silicon p-n junction
Progress in thin film GaAs solar cells
Solar cells using polycrystalline films of gallium arsenide
A STUDY OF THE EFFECT OF GEOMAGNETICALLY TRAPPED RADIATION ON UNPROTECTED SOLAR CELLS
Solar cell damage by proton and electron radiation in the ionosphere
Development of high-performance GaInAsP solar cells for tandem solar cell applications
Recent results in the development of high-efficiency, low-bandgap GaInAsP solar cells epitaxially grown and lattice matched on InP substrates are presented. Such cells are intended to be used as optimum bottom cell components in tandem solar cells. Assuming that a GaAs-based top cell is used, computer simulation of the potential bottom cell performance as a function of the cell bandgap and incident spectrum indicates that two particular alloys are desirable: Ga0.47In0.53As (Eg = 0.75 eV) for space applications and Ga0.25In0.75As0.54P0.46 (Eg = 0.95 eV) for terrestrial applications. In each of these materials, solar cells with new record-level efficiencies have been fabricated. The efficiency boost available to tandem configurations from these low-bandgap cells is discussed.
Orienting and Applying Flux to Solar Cells
Solar cells are oriented and fluxed automatically at first work station along solar-array assembly line. In under 2 seconds rotary drive rotates cell into proper position for applying solder flux to bus pad on collector side. When contact bus pad is in correct position, capstan drive is disengaged, and vacuum holddown beneath cell is turned on. Flux system lowers and applies preset amount of solder flux to bus pad. Two interconnect tabs are soldered to fluxed areas.
Improved cover for cadmium sulfide solar cells
Solar cell performance and radiation resistance is improved by application of 1-mil thickness of Teflon FEP protective material. Cells produce 30 percent more power than similar cells with conventional Kapton covers.
Preliminary results of radiation and Jupiter environment tests on solar cells
Solar cells for Jupiter mission, discussing radiation and environmental tests concerning I-V characteristics
Study to determine and improve design for lithium-doped solar cells
Solar cell experiments show that a single lithium density parameter, the lithium density gradient, calculated from nondestructive capacitance measurements, provides the basis for accurate predictions of lithium cell behavior in a 1-MeV electron environment for fluences ranging between 3 X 10 to the 13th power e/sq cm and 3 X 10 to the 15th power/e sq cm. The oxygen-rich (quartz crucible) lithium cell with phosphorous starting dopant and lithium gradient between approximately 5 X 10 to the 18th power and 1.5 x 10 to the 19th power/cm to the 4th power was found superior in performance to the commercial 10 ohm-cm n/p control cells. Post-recovery stability of oxygen-rich cells was satisfactory. An average post-recovery current drop of approximately 1 mA was observed for 70 crucible cells after 1 year-equivalent storage time at 80 C. In contrast the oxygen-poor (float zone and Lopex) lithium cells displayed spotty initial performance and stability problems at room temperature.
Breakdown phenomena in reverse biased silicon solar cells.
Solar cell reverse current-voltage characteristics have been found to vary widely and to be generally unstable. At reverse voltages greater than approximately 20 V and at cell power dissipations of more than 4 W, the probability of permanent breakdown, resulting in cell short-circuit failure, was found to increase with increasing voltage and exposure time. Shorted cells showed evidence of cell contact material and silicon melting in very localized areas with lava-like flow patterns and channels bridging the p and n contacts.
Uniform solar cells
Solar cells used in radiation sensors can be efficiently matched by individual trimming. Strip of aluminized Mylar is used to adjust cell output to within required tolerances. Method is faster than individual selection of matched cells.
Low cost processes for fabricating silicon solar cells
Solar cell fabrication processes, in particular junction formation and metallization, are evaluated in terms of cell efficiencies, process yields, module packing factors, and energy cost effectiveness. It is shown that for junction formation, the diffusion processes provide a relatively low-cost approach. The costs per unit cell area can be further reduced by increased wafer area and mechanized wafer handling. The costs for a large number of metallization processes, excluding the costs of the metal, are roughly comparable. However, their varying influence on cell performance leads to a significant spread in the allowable process costs.
Diagnostic study of BSF silicon solar cells
Solar cells equipped with back surface fields (BSF) were fabricated by means of an aluminum alloy, boron diffusion, and boron ion implantation. The importance of initial thickness, resistivity, orientation, and the crystal growth method were examined. Aluminum in paste form was screen printed on the cell, followed by alloy formation at 800 C for a minute. Application of the BSFs resulted in open circuit voltage improvements dependent on the substrate resistivity, ranging from 10 mV at 0.3 ohm-cm to 50 mV at 15 ohm-cm. The gains in performance were attributed to a longer penetration depth, a heightened concentration profile at the interface, and higher concentrations in the p+ layer.
Advances in high output voltage silicon solar cells
Solar cells have been fabricated from 0.1 ohm-cm, p-type silicon by means of a two-step diffusion process of emitter formation in order to delineate the factors limiting V(oc) in conventionally structured cells with the goal of achieving 700 mV. The cells are 200 microns thick and 2 x 2 cm in area with a planar front surface that has an anti-reflection coating of tantalum oxide, as well as Cr-Au-Ag contact metallization on both sides of the cell. The Cr-Au-Ag is applied over an aluminum diffused layer on the back, while it is applied through small holes in the anti-reflection coating on the front. Results show that the best of these cells exhibits an open-circuit voltage of 654 mV under AMO illumination.
Development of technique for air coating and nickel and copper metalization of solar cells
Solar cells were made with a variety of base metal screen printing inks applied over silicon nitride AR coating and copper electroplated. Fritted and fritless nickel and fritless tin base printing inks were evaluated. Conversion efficiencies as high as 9% were observed with fritted nickel ink contacts, however, curve shapes were generally poor, reflecting high series resistance. Problems encountered in addition to high series reistance included loss of adhesion of the nickel contacts during plating and poor adhesion, oxidation and inferior curve shapes with the tin base contacts.
Radiation resistance of Ge, Ge0.93Si0.07, GaAs and Al0.08Ga0.92 as solar cells
Solar cells made of Ge, Ge(0.93)Si(0.07) alloys, GaAs and Al(0.08)Ga(0.92)As were irradiated in two experiments with 1-meV electrons at fluences as great as 1 x 10(exp 16) cm(exp-2). Several general trends have emerged. Low-band-gap Ge and Ge(0.93)Si(0.07) cells show substantial resistance to radiation-induced damage. The two experiments showed that degradation is less for Al(0.08)Ga(0.92)As cells than for similarly irradiated GaAs cells. Compared to homojunctions, cells with graded-band-gap emitters did not show the additional resistance to damage in the second experiment that had been seen in the first. The thickness of the emitter is a key parameter to limit the degradation in GaAs devices.