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At least 37 records · Page 2

Fabrication of OSOS cells by neutral ion beam sputtering

Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

Burk, D. E.↗

Photoelectrolysis of water at high current density - Use of laser light excitation of semiconductor-based photoelectrochemical cells

In the present paper, some results are given for UV laser light irradiation of the photoanode (SnO2, SrTiO3, or TiO2) in a cell for the light-driven electrolysis of H2O, at radiation intensities of up to 380 W/sq cm. The properties of the anode material are found to be independent of light intensity. Conversion of UV light to stored chemical energy in the form of 2H2/O2 from H2O was driven at a rate of up to 30 W/sq cm. High O2 evolution rates at the irradiated anodes without changes in the current-voltage curves are attributed to the excess oxidizing power associated with photogenerated holes. A test for this sort of hypothesis for H2 evolution at p-type materials is proposed.

Wrighton, M. S.↗

Transparent electrically conducting thin films for spacecraft temperature control applications

Thin transparent films of In2O3 or In2O3 + SnO2 prepared by evaporation or sputtering have been tested for use as surface layers for spacecraft temperature control coatings. The films are intended to prevent nonuniform electric charge buildup on the spacecraft exterior. Film thicknesses of 300 to 500 A were found to be optimal in terms of durability and minimum impact on the solar absorptance and the thermal emissivity of the underlayers. As a verification of their suitability for long-duration space missions, the films were subjected to simulated solar UV plus proton irradiation in a vacuum.

Hass, G.↗

Transparent conductive coatings

Thin film transparent conductors are discussed. Materials with electrical conductivity and optical transparency are highly desirable in many optoelectronic applications including photovoltaics. Certain binary oxide semiconductors such as tin oxide (SnO2) and indium oxide (In2O3) offer much better performance tradeoff in optoelectronics as well as better mechanical and chemical stability than thin semitransparent films. These thin-film transparent conductors (TC) are essentially wide-bandgap degenerate semiconductors - invariably n-type - and hence are transparent to sub-bandgap (visible) radiation while affording high electrical conductivity due to the large free electron concentration. The principal performance characteristics of TC's are, of course, electrical conductivity and optical transmission. The TC's have a refractive index of around 2.0 and hence act as very efficient antireflection coatings. For using TC's in surface barrier solar cells, the photovoltaic barrier is of utmost importance and so the work function or electron affinity of the TC is also a very important material parameter. Fabrication processes are discussed.

Ashok, S.↗

Optimization of the catalytic oxidation of CO for closed-cycle CO2 laser applications

This report develops a basis for the design of a catalyst bed for the recombination of CO and O2 in a closed-cycle CO2 laser system. The catalyst is 1% Pt on SnO2 having a BET surface area of 6.7 sq m/g and a specific void volume of 0.374 cu cm/g. The design conditions are: a catalyst bed temperature of 100 C and a circulating flow rate of 10 lambda/min. Under these conditions, the required quantity of catalyst for prolonged laser operation of 668g. The rat law for the reaction of a stoichiometric mixture of 1% CO + 1/2% O2 in helium was determined to be overall first order; however, additional experiments with non-stoichiometric gas mixtures of CO and O2 are needed to determine the order of the CO concentration and the order of the O2 concentration in the rate law.

Miller, I. M.↗

Low-temperature deposition of low resistivity ZnSe films by reactive sputtering

The use of reactive dc magnetron cosputtering of Zn and the dopant In in an H2Se/Ar gaseous mixture is described. It is observed that initial deposition using pure Zn targets produced yellowish transparent ZnSe films on glass with a film resistivity of 10 to the 8th ohms cm and deposition using a Zn target doped with a fixed 1 percent of In produced ZnSe films with resistivities of about 10,000 ohms cm. The improvement of film conductivity by optimizing the In content in the ZnSe films is discussed; the ZnSe resistivity dependence on In flux is studied. Optical absorption/transmission measurements reveal a photon energy band gap of 2.65 eV at room temperature and X-ray diffraction show highly oriented polycrystalline films on glass with the c axis parallel to the plane of the film. Compositional analysis was performed and the Zn/Se ratio is measure as 48.8/49.0 with an In concentration of 1.16 percent. ZnSe films deposited on glass and conducting SnO2-coated glass substrates with a resistance of 20 ohms cm and a substrate temperature of 120 C have been fabricated.

Stirn, R. J.↗

Highly conducting ZnSe films by reactive magnetron sputtering

This paper presents the results of an effort to deposit high-conductivity ZnSe on glass and conducting SnO2-coated glass substrates by reactive magnetron sputter deposition, using pure metal sputter targets of Zn and dopants such as In, Ga, and Al. Clear yellow ZnSe films were successfully obtained. By using substrate temperatures as low as 150 C, cosputtered dopants, and sputter parameters and H2Se injection rates which maximize the Zn-to-Se ratio in the films, ZnSe bulk resistivities have been lowered by up to seven orders of magnitude, reaching values as low as 20 ohm cm. The most effective dopant to data has been In, cosputtered with Zn in amounts leading to In atomic concentrations as high as 1.4 percent. Atomic-absorption measurements show an average 49.9/48.9 ratio of Zn to Se.

Nouhi, A.↗

Studies of long-life pulsed CO2 laser with Pt/SnO2 catalyst

Closed-cycle CO2 laser testing with and without a catalyst and with and without CO addition indicate that a catalyst is necessary for long-term operation. Initial results indicate that CO addition with a catalyst may prove optimal, but a precise gas mix has not yet been determined. A long-term run of 10 to the 6th power pulses using 1.3% added CO and a 2% Pt on SnO2 catalyst yields an efficiency of about 95% of open-cycle steady-state power. A simple mathematical analysis yields results which may be sufficient for determining optimum running conditions. Future plans call for testing various catalysts in the laser and longer tests, 10 to the 7th power pulses. A Gas Chromatograph will be installed to measure gas species concentration and the analysis will be slightly modified to include neglected but possibly important parameters.

Sidney, Barry D.↗

Characterization of Pt/SnO2 catalysts for CO oxidation

Results are presented of surface characterization of 2% and 1% (w/w) Pt on SnO2 catalysts which are being used in promoting the oxidation of CO in pulsed CO2 lasers. The N2 adsorption BET surface area for both catalysts is 6.9 sq m/g. The CO chemisorbed area at 313K is 0.17 sq m/g and 0.062 sq m/g for the 2% and 1% catalysts, respectively. Monitoring the reaction between CO and O2 by the same technique, at the same temperature yields a turn-over frequency (TOF) for the 2% catalyst of 2.7 x 100 molecules of CO2/site/s and for the 1% catalyst a value of 1.2 x 100. The ratio of the TOFs for the two catalysts is 2.2 which is approximately the ratio of the Pt loading.

Brown, K. G.↗

CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe

Results on CuInSe2/ZnSe thin-film heterojunction photovoltaic devices are presented. By the use of reactive magnetron cosputtering of Zn and In dopant in Ar/H2Se, ZnSe thin films have been deposited on glass and conducting SnO2-coated glass substrates with resistivity as low as 20 ohm-cm at deposition temperatures as low as 120 C. Preliminary ZnSe depositions onto CuInSe2 films supplied by industrial laboratories are encouraging. Reactive-sputter-deposition parameters for ZnSe have yet to be optimized for CuInSe2 substrates; however, open-circuit voltages as high as 430 mV were obtained. The highest short-circuit current density, as determined by spectral response weighted for AM1.5 global insulation, was 37.4 mA/sq cm. In all cases, a highly conductive ZnO film was overcoated onto the ZnSe to reduce the overall sheet resistance.

Nouhi, A.↗

Catalyst for carbon monoxide oxidation

A catalyst is disclosed for the combination of CO and O2 to form CO2, which includes a platinum group metal (e.g., platinum); a reducable metal oxide having multiple valence states (e.g., SnO2); and a compound which can bind water to its structure (e.g., silica gel). This catalyst is ideally suited for application to high-powered pulsed, CO2 lasers operating in a sealed or closed-cycle condition.

Upchurch, Billy T.↗

Pt/SnO2-based CO-oxidation catalysts for long-life closed-cycle CO2 lasers

Noble-metal/tin-oxide based catalysts such as Pt/SnO2 have been shown to be good catalysts for the efficient oxidation of CO at or near room temperature. These catalysts require a reductive pretreatment and traces of hydrogen or water to exhibit their full activity. Addition of Palladium enhances the activity of these catalysts with about 15 to 20 percent Pt, 4 percent Pd, and the balance SnO2 being an optimum composition. Unfortunately, these catalysts presently exhibit significant decay due in part to CO2 retention, probably as a bicarbonate. Research on minimizing the decay in activity of these catalysts is currently in progress. A proposed mechanism of CO oxidation on Pt/SnO2-based catalysts has been developed and is discussed.

Schryer, David R.↗

Analysis of Pt/SnO(sub x) during catalysis of CO oxidation

Temperature-programmed reduction using 6kPaH2 suggests that a sample consisting of 3 percent Pt supported directly on SnO2 is, under conditions of catalysis of CO oxidation used here, best represented as 3 percent Pt/SnO sub x, since the support is likely to partially reduced, probably in the vicinity of the metal/oxide interface. Catalytic measurements at 421 to 424 K show that this 3 percent Pt/SnO sub x is significantly more active per unit area of Pt than 6 percent Pt/SiO2 in catalyzing the oxidation of CO. In situ micro-FTIR reveals that while the latter has predominantly linearly bound CO on the surface under reaction conditions, the Pt/SnO sub x also has a species absorbing at 2168 cm(exp -1) which may be CO upon Pt in a positive oxidation state or weakly chemisorbed CO on zero-valent Pt. This may be directly involved in the low temperature oxidation of CO on the Pt/SnO sub x, since being weakly held the activation energy for its surface diffusion to the metal/oxide interface will be low; such mobile species could allow the high rates of surface transport and an increase in the fraction of the surface over which the CO oxidation occurs. FTIR also reveals carbonate-type species on the P/SnO sub c surface.

Sermon, Paul A.↗

Effects of grain size and grain boundary on critical current density of high T(sub c) superconducting oxides

By means of adding impurity elements in high T sub c oxides, the effects were studied of grain size and grain boundary on the critical current density of the following systems: YBa2Cu3O(7-y) and Bi-Pr-Sr-Ca-Cu-O. In order to only change the microstructure instead of the superconductivity of the grains in the samples, the impurity elements were added into the systems in terms of the methods like this: (1) substituting Y with the lanthanide except Pr, Ce, and Tb in YBa2Cu3O(7-y) system to finning down grains in the samples, therefore, the effect can be investigated of the grain size on the critical current density of 1:2:3 compounds; (2) mixing the high T sub c oxides with the metal elements, such as Ag, according to the composition of (high T sub c oxide)1-xAgx to metallize the grain boundaries in the samples, studying the effect of the electric conductivity of the grain boundaries on the critical current density; (3) adding SiO2, PbO2, and SnO2 into the high T sub c oxide to form impurity phases in the grain boundaries, trying to find out the effects of the impurity phases or metalloid grain boundaries on the critical current density of the high T sub c superconductors. The experimental results indicate that in the case of of the presence of the metalloid grain boundaries finning down grains fails to enhance the j sub c, but restrains it strongly, the granular high T sub c superconductors with the small size grains coupled weakly is always the low j sub c system.

Zhao, Y.↗

Modeling of carbon monoxide oxidation kinetics over NASA carbon dioxide laser catalysts

The recombination of CO and O2 formed by the dissociation of CO2 in a sealed CO2 laser discharge zone is examined. Conventional base-metal-oxide catalysts and conventional noble-metal catalysts are not effective in recombining the low O2/CO ratio at the low temperatures used by the lasers. The use of Pt/SnO2 as the noble-metal reducible-oxide (NMRO), or other related materials from Group VIIIA and IB and SnO2 interact synergistically to produce a catalytic activity that is substantially higher than either componet separately. The Pt/SnO2 and Pd/SnO2 were reported to have significant reaction rates at temperatures as low as -27 C, conditions under which conventional catalysts are inactive. The gas temperature range of lasers is 0 + or - 40 C. There are three general ways in which the NMRO composite materials can interact synergistically: one component altering the properties of another component; the two components each providing independent catalytic functions in a complex reaction mechanism; and the formation of catalytic sites through the combination of two components at the atomic level. All three of these interactions may be important in low temperature CO oxidation over NMRO catalysts. The effect of the noble metal on the oxide is discussed first, followed by the effect of the oxide on the noble metal, the interaction of the noble metal and oxide to form catalytic sites, and the possible ways in which the CO oxidation reaction is catalyzed by the NMRO materials.

Herz, Richard K.↗

Catalyst for carbon monoxide oxidation

A catalyst for the combination of CO and O2 to form CO2 which includes a platinum group metal, e.g., platinum; a reducible metal oxide having mulitple valence states, e.g., SnO2; and a compound which can bind water to its structure, e.g., silica gel. This catalyst is ideally suited for application to high powered, pulsed, CO2 lasers operating in a sealed or closed cycle condition.

Upchurch, Billy T.↗

Solid State oxygen Sensor Development

To anticipate future long-duration mission needs for life support sensors, we explored the feasibility of using thin-film metal-oxide semiconductors. The objective of this task was to develop gas sensors for life support applications which would be suitable for long-duration missions. Metal oxides, such as ZnO, SnO2, and TiO2 have been shown to react with oxygen molecules. Oxygen lowers the metal oxide's electrical resistance. Critical to the performance is the application of the oxide in a thin film on an inert substrate: the thinner the film, the more readily the oxygen penetration and hence the more rapid and sensitive the sensor. Metal oxides are not limited to oxygen detection, rather, oxides offer detection and quantification applications to the complete range of gases of interest, not only for life support systems, but for propellants as well.

Cheung, Jeffery T.↗

Thermal Control using Electrochromism

The applicability of a charge balanced electrochromic device to modulate the frequencies in the thermal infrared region is examined in this study. The device consisted of a transparent conductor, WO3 anode, PMMA/LiClO4 electrolyte, V2O5 cathode and transparent conductor. The supporting structure in the device is SnO2 coated glass and the edges are sealed with epoxy to reduce moisture absorption. The performance evaluation comprised of cyclic voltammetric measurements and determination of transmittance at various wavelengths. The device was subjected to anodic and cathodic polarization by sweeping the potential at a rate of 10 mV/sec from -0.8V to 1.8V. The current versus voltage profile indicated no reaction between -0.5 and +0.5 V. The device is colored green at 1.8V with a transmittance of 5% at a wavelength, lambda=900 nm and colorless at -0.8V with a transmittance of 74% at lambda=500 nm. The optical modulation is limited to 400-1500 nm and there is no activity in the thermal infrared. The switching time is 75 seconds for transmittance to decrease from 74% to 50%. The device yielded reproducible values for transmittance when cycled between colored and bleached states by application of 1.8V and -0.8V, respectively.

Vaidyanathan, Hari↗